FR2981200B1 - Cellule monolithique de circuit integre et notamment cellule de commutation monolithique - Google Patents

Cellule monolithique de circuit integre et notamment cellule de commutation monolithique

Info

Publication number
FR2981200B1
FR2981200B1 FR1159137A FR1159137A FR2981200B1 FR 2981200 B1 FR2981200 B1 FR 2981200B1 FR 1159137 A FR1159137 A FR 1159137A FR 1159137 A FR1159137 A FR 1159137A FR 2981200 B1 FR2981200 B1 FR 2981200B1
Authority
FR
France
Prior art keywords
monolithic
cell
integrated circuit
switch
switch cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1159137A
Other languages
English (en)
Other versions
FR2981200A1 (fr
Inventor
Abdelhakim Bourennane
Marie Breil-Dupuy
Frederic Richardeau
Jean-Louis Sanchez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Institut National Polytechnique de Toulouse INPT
Original Assignee
Centre National de la Recherche Scientifique CNRS
Institut National Polytechnique de Toulouse INPT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1159137A priority Critical patent/FR2981200B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Institut National Polytechnique de Toulouse INPT filed Critical Centre National de la Recherche Scientifique CNRS
Priority to US14/353,805 priority patent/US10199376B2/en
Priority to EP12781377.2A priority patent/EP2766932A1/fr
Priority to CN201280049682.4A priority patent/CN104011861B/zh
Priority to JP2014533973A priority patent/JP2014534622A/ja
Priority to PCT/FR2012/052288 priority patent/WO2013054033A1/fr
Publication of FR2981200A1 publication Critical patent/FR2981200A1/fr
Application granted granted Critical
Publication of FR2981200B1 publication Critical patent/FR2981200B1/fr
Priority to JP2017208349A priority patent/JP2018032871A/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Rectifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1159137A 2011-10-10 2011-10-10 Cellule monolithique de circuit integre et notamment cellule de commutation monolithique Expired - Fee Related FR2981200B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1159137A FR2981200B1 (fr) 2011-10-10 2011-10-10 Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
EP12781377.2A EP2766932A1 (fr) 2011-10-10 2012-10-09 Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
CN201280049682.4A CN104011861B (zh) 2011-10-10 2012-10-09 集成电路的单块单元并且尤其是单块转换单元
JP2014533973A JP2014534622A (ja) 2011-10-10 2012-10-09 集積回路のためのモノリシックセルおよび特にモノリシック転流セル
US14/353,805 US10199376B2 (en) 2011-10-10 2012-10-09 Monolithic cell for an integrated circuit and especially a monolithic switching cell
PCT/FR2012/052288 WO2013054033A1 (fr) 2011-10-10 2012-10-09 Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
JP2017208349A JP2018032871A (ja) 2011-10-10 2017-10-27 集積回路のためのモノリシックセルおよび特にモノリシック転流セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1159137A FR2981200B1 (fr) 2011-10-10 2011-10-10 Cellule monolithique de circuit integre et notamment cellule de commutation monolithique

Publications (2)

Publication Number Publication Date
FR2981200A1 FR2981200A1 (fr) 2013-04-12
FR2981200B1 true FR2981200B1 (fr) 2017-01-13

Family

ID=47143158

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1159137A Expired - Fee Related FR2981200B1 (fr) 2011-10-10 2011-10-10 Cellule monolithique de circuit integre et notamment cellule de commutation monolithique

Country Status (6)

Country Link
US (1) US10199376B2 (fr)
EP (1) EP2766932A1 (fr)
JP (2) JP2014534622A (fr)
CN (1) CN104011861B (fr)
FR (1) FR2981200B1 (fr)
WO (1) WO2013054033A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014209690B4 (de) * 2014-05-21 2020-02-20 Robert Bosch Gmbh Kommutierungszelle
WO2016094718A1 (fr) 2014-12-10 2016-06-16 Texas Instruments Incorporated Transistor de puissance à effet de champ (fet), pré-amplificateur de tension, dispositif de commande et intégration de résistances de détection
FR3050571A1 (fr) * 2016-04-20 2017-10-27 Centre Nat Rech Scient Convertisseur electronique de puissance utilisant deux puces multi-poles de puissance a substrats complementaires n et p.
US20210013793A1 (en) * 2016-08-26 2021-01-14 Delta Electronics (Shanghai) Co., Ltd Power chip and bridge circuit
FR3060849B1 (fr) 2016-12-21 2021-04-30 Centre Nat Rech Scient Puce(s) multipole(s) de puissance integrant de maniere monolithique des cellules de decoupage asymetriques et module(s) de puissance multi-phase utilisant la ou plusieurs desdites puces multipole(s)
US10461021B2 (en) * 2017-02-28 2019-10-29 Deere & Company Electronic assembly with enhanced thermal dissipation
CN108074966A (zh) * 2017-12-27 2018-05-25 电子科技大学 恒流器件及其制造方法
JP7070303B2 (ja) * 2018-10-04 2022-05-18 三菱電機株式会社 半導体装置
US10991680B2 (en) * 2019-09-18 2021-04-27 Alpha And Omega Semiconductor (Cayman), Ltd. Common source land grid array package
CN112713145A (zh) 2019-10-24 2021-04-27 华为技术有限公司 一种开关半导体器件及其制备方法、固态移相器

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127985B2 (fr) * 1971-10-01 1976-08-16
US4278985A (en) * 1980-04-14 1981-07-14 Gte Laboratories Incorporated Monolithic integrated circuit structure incorporating Schottky contact diode bridge rectifier
JPH07114279B2 (ja) * 1988-01-06 1995-12-06 株式会社東芝 半導体装置
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
JPH04297071A (ja) * 1990-10-05 1992-10-21 Fuji Electric Co Ltd 半導体装置
JPH05343662A (ja) * 1992-06-04 1993-12-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0832060A (ja) * 1994-07-13 1996-02-02 Hitachi Ltd 半導体集積回路装置およびその製造方法
FR2729008B1 (fr) * 1994-12-30 1997-03-21 Sgs Thomson Microelectronics Circuit integre de puissance
US6180966B1 (en) * 1997-03-25 2001-01-30 Hitachi, Ltd. Trench gate type semiconductor device with current sensing cell
GB9722780D0 (en) * 1997-10-28 1997-12-24 Nada Electronics Ltd AC to DC conversion arrangement
JP4156258B2 (ja) * 2002-03-28 2008-09-24 本田技研工業株式会社 共振型インバータ
JP4757449B2 (ja) * 2004-01-29 2011-08-24 三菱電機株式会社 半導体装置
JP2006173296A (ja) * 2004-12-15 2006-06-29 Yaskawa Electric Corp 半導体装置とその製造方法
US8026572B2 (en) * 2006-12-06 2011-09-27 Denso Corporation Semiconductor device and method for manufacturing same
JP5217348B2 (ja) * 2006-12-06 2013-06-19 株式会社デンソー 半導体装置
JP5320679B2 (ja) * 2007-02-28 2013-10-23 富士電機株式会社 半導体装置およびその製造方法
JP2008235788A (ja) * 2007-03-23 2008-10-02 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP2008311300A (ja) * 2007-06-12 2008-12-25 Toyota Motor Corp パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置
CN100592532C (zh) * 2007-08-28 2010-02-24 电子科技大学 具有“u”字形漂移区的半导体器件
US8203181B2 (en) * 2008-09-30 2012-06-19 Infineon Technologies Austria Ag Trench MOSFET semiconductor device and manufacturing method therefor
JP5250895B2 (ja) * 2009-01-22 2013-07-31 三菱電機株式会社 半導体装置
US8058670B2 (en) * 2009-06-04 2011-11-15 Force—MOS Technology Corporation Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up
FR2947949B1 (fr) * 2009-07-08 2012-03-02 Centre Nat Rech Scient Module electronique de puissance
DE102011079747A1 (de) * 2010-07-27 2012-02-02 Denso Corporation Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür

Also Published As

Publication number Publication date
US20140299916A1 (en) 2014-10-09
CN104011861A (zh) 2014-08-27
JP2014534622A (ja) 2014-12-18
CN104011861B (zh) 2017-10-10
FR2981200A1 (fr) 2013-04-12
EP2766932A1 (fr) 2014-08-20
JP2018032871A (ja) 2018-03-01
WO2013054033A1 (fr) 2013-04-18
US10199376B2 (en) 2019-02-05

Similar Documents

Publication Publication Date Title
FR2981200B1 (fr) Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
EP2795664A4 (fr) Focalisation du premier et du deuxième ordre à l'aide de régions libres de champ en temps de vol
EP2712085A4 (fr) Circuit de commutation et module à semiconducteur
DK3301648T3 (da) Nedarvning i samplearraymultitræsunderinddeling
SG2014013676A (en) Therapeutics using adipose cells and cell secretions
DK2923400T3 (da) Reduktion af gasning i lithiumtitanatceller
DK2920208T3 (da) Rekombinante celleoverflade-capture-proteiner
EP2752922A4 (fr) Carte de commutation ayant une structure nouvelle et module de batterie la comprenant
EP2744031A4 (fr) Électrolyte non aqueux, et élément électrochimique mettant en uvre celui-ci
SG11201404679VA (en) Integrated circuitry components, switches, and memory cells
FR2980044B1 (fr) Cellule dephaseuse rayonnante reconfigurable basee sur des resonances fentes et microrubans complementaires
DK2717756T3 (da) Sensor til måling af vitalparametre i øregangen
FR2983656B1 (fr) Circuit magnetique en secteurs
FI20105396A0 (fi) Menetelmä ja järjestely sähkökäyttöjärjestelmän yhteydessä
ES2744979T8 (es) Poblaciones de células renales y usos de las mismas
DE112012004712A5 (de) Beleuchtetes, wasser- und staubdichtes Schaltelement
DK2891779T3 (da) Totaktsmotor med skylning i én retning
BR112013033919A2 (pt) combinações e seus usos
CO6801641A2 (es) Péptidos cíclicos con actividad con actividad antineoplásica y antiangiogénica
FI20095645A0 (fi) Ohut paristo
BRPI1013855A2 (pt) célula eletroquímica e seu uso
FR2973044B1 (fr) Cellule electrochimique symetrique
FI20105568A0 (fi) Sovitelma suurjännitepylvään yhteydessä
FR2964783B1 (fr) Commutateur de court-circuit rapide
FR2980085B1 (fr) Article cosmetique, notamment faux-ongle

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

ST Notification of lapse

Effective date: 20200914