JP2014534622A - 集積回路のためのモノリシックセルおよび特にモノリシック転流セル - Google Patents
集積回路のためのモノリシックセルおよび特にモノリシック転流セル Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000002441 reversible effect Effects 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000002457 bidirectional effect Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 32
- 238000009792 diffusion process Methods 0.000 description 11
- 230000010354 integration Effects 0.000 description 7
- 230000003993 interaction Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
Abstract
Description
− 左のセクション6がONである一方、右のセクション6はOFFのままで適用された電圧に耐える。
− 右のセクション6はONである一方、左のセクション6はOFFのままで適用された電圧に耐える。
Claims (14)
- 少なくとも2つの電圧および電流において単方向の同じタイプの半導体構造を有する、集積回路モノリシックセルであって、各構造は、アノード、カソードおよびオプションとしてゲートを有し、
前記構造は、一塊の同一の半導体基板に集積され、
前記半導体基板の第1の面上に、前記カソードと、オプションとして対応する構造の前記ゲートと、が、それぞれの場合において第1の予め定められたゾーンに配置され、
前記各構造の前記アノードは、前記半導体基板の前記第1の面と反対の第2の面上の第2のゾーンに配置され、該構造の前記第2のゾーンは、対応する構造の前記第1のゾーンの反対にあり、
同じタイプで別々の構造の、前記アノードおよび前記カソードを有するグループから選択された電極は、電気的に互いに接続されることを特徴とする、集積回路モノリシックセル。 - 2つの隣接する構造の前記アノードは、それぞれの場合において電気的に接続される、請求項1に記載のセル。
- 2つの隣接するアノード間は、前記半導体基板の金属被覆によって前記2つのアノード間の前記半導体基板の第2の面上で電気的に接続され、
前記半導体基板は、前記金属被覆の近辺におけるN+型領域と、関連する前記2つの構造間のN−型領域と、を有する、請求項2に記載のセル。 - 2つの隣接する構造の前記カソードは、それぞれの場合において電気的に接続される、請求項1に記載のセル。
- 垂直方向のP+型タイプの絶縁壁が、前記2つの構造間で実現される、請求項4に記載のセル。
- 前記半導体基板は、シリコン(SiO2)である、請求項1〜5のいずれか一項に記載のセル。
- 各半導体構造は、ダイオードに対応する、請求項1〜6のいずれか一項に記載のセル。
- 各半導体構造は、電圧および電流において単方向の半導体スイッチング構造である、請求項1〜6のいずれか一項に記載のセル。
- 各構造は、少なくとも1つの制御電極が提供される、請求項1〜8のいずれか一項に記載のセル。
- 各セルは、ダイオードと結晶中で結合されて逆導通が可能になる、請求項8または9に記載のセル。
- 電圧と電流において単方向で、少なくとも1つの制御電極が提供され、ダイオードと結晶中で結合されて逆導通が可能になる各スイッチング構造は、逆導通絶縁ゲートバイポーラトランジスタおよびVD−MOSタイプのトランジスタを有する構造のグループから選択される、請求項10に記載のセル。
- 請求項2に記載の転流セルと、請求項4に記載の転流セルと、を有する、整流器ブリッジ。
- 請求項2に記載の転流セルと、請求項4に記載の転流セルと、を有する、インバータブリッジ。
- 請求項10または請求項11に記載の転流セルを有する、電流および電圧における双方向電源スイッチ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1159137 | 2011-10-10 | ||
FR1159137A FR2981200B1 (fr) | 2011-10-10 | 2011-10-10 | Cellule monolithique de circuit integre et notamment cellule de commutation monolithique |
PCT/FR2012/052288 WO2013054033A1 (fr) | 2011-10-10 | 2012-10-09 | Cellule monolithique de circuit integre et notamment cellule de commutation monolithique |
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JP2017208349A Division JP2018032871A (ja) | 2011-10-10 | 2017-10-27 | 集積回路のためのモノリシックセルおよび特にモノリシック転流セル |
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JP2014534622A true JP2014534622A (ja) | 2014-12-18 |
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Family Applications (2)
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JP2014533973A Pending JP2014534622A (ja) | 2011-10-10 | 2012-10-09 | 集積回路のためのモノリシックセルおよび特にモノリシック転流セル |
JP2017208349A Pending JP2018032871A (ja) | 2011-10-10 | 2017-10-27 | 集積回路のためのモノリシックセルおよび特にモノリシック転流セル |
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JP2017208349A Pending JP2018032871A (ja) | 2011-10-10 | 2017-10-27 | 集積回路のためのモノリシックセルおよび特にモノリシック転流セル |
Country Status (6)
Country | Link |
---|---|
US (1) | US10199376B2 (ja) |
EP (1) | EP2766932A1 (ja) |
JP (2) | JP2014534622A (ja) |
CN (1) | CN104011861B (ja) |
FR (1) | FR2981200B1 (ja) |
WO (1) | WO2013054033A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020057746A (ja) * | 2018-10-04 | 2020-04-09 | 三菱電機株式会社 | 半導体装置 |
JP2023500610A (ja) * | 2019-10-24 | 2023-01-10 | 華為技術有限公司 | 半導体スイッチデバイス、その製造方法、およびソリッドステート移相器 |
Families Citing this family (8)
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DE102014209690B4 (de) * | 2014-05-21 | 2020-02-20 | Robert Bosch Gmbh | Kommutierungszelle |
EP3257336A4 (en) * | 2014-12-10 | 2018-10-10 | Texas Instruments Incorporated | Power field-effect transistor (fet), pre-driver, controller, and sense resistor integration |
FR3050571A1 (fr) * | 2016-04-20 | 2017-10-27 | Centre Nat Rech Scient | Convertisseur electronique de puissance utilisant deux puces multi-poles de puissance a substrats complementaires n et p. |
US20210013793A1 (en) * | 2016-08-26 | 2021-01-14 | Delta Electronics (Shanghai) Co., Ltd | Power chip and bridge circuit |
FR3060849B1 (fr) | 2016-12-21 | 2021-04-30 | Centre Nat Rech Scient | Puce(s) multipole(s) de puissance integrant de maniere monolithique des cellules de decoupage asymetriques et module(s) de puissance multi-phase utilisant la ou plusieurs desdites puces multipole(s) |
US10461021B2 (en) | 2017-02-28 | 2019-10-29 | Deere & Company | Electronic assembly with enhanced thermal dissipation |
CN108074966A (zh) * | 2017-12-27 | 2018-05-25 | 电子科技大学 | 恒流器件及其制造方法 |
US10991680B2 (en) * | 2019-09-18 | 2021-04-27 | Alpha And Omega Semiconductor (Cayman), Ltd. | Common source land grid array package |
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2011
- 2011-10-10 FR FR1159137A patent/FR2981200B1/fr not_active Expired - Fee Related
-
2012
- 2012-10-09 CN CN201280049682.4A patent/CN104011861B/zh not_active Expired - Fee Related
- 2012-10-09 JP JP2014533973A patent/JP2014534622A/ja active Pending
- 2012-10-09 WO PCT/FR2012/052288 patent/WO2013054033A1/fr active Application Filing
- 2012-10-09 US US14/353,805 patent/US10199376B2/en not_active Expired - Fee Related
- 2012-10-09 EP EP12781377.2A patent/EP2766932A1/fr not_active Withdrawn
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2017
- 2017-10-27 JP JP2017208349A patent/JP2018032871A/ja active Pending
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JP7070303B2 (ja) | 2018-10-04 | 2022-05-18 | 三菱電機株式会社 | 半導体装置 |
JP2023500610A (ja) * | 2019-10-24 | 2023-01-10 | 華為技術有限公司 | 半導体スイッチデバイス、その製造方法、およびソリッドステート移相器 |
JP7436648B2 (ja) | 2019-10-24 | 2024-02-21 | 華為技術有限公司 | 半導体スイッチデバイス、その製造方法、およびソリッドステート移相器 |
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US20140299916A1 (en) | 2014-10-09 |
CN104011861A (zh) | 2014-08-27 |
FR2981200B1 (fr) | 2017-01-13 |
US10199376B2 (en) | 2019-02-05 |
WO2013054033A1 (fr) | 2013-04-18 |
FR2981200A1 (fr) | 2013-04-12 |
CN104011861B (zh) | 2017-10-10 |
JP2018032871A (ja) | 2018-03-01 |
EP2766932A1 (fr) | 2014-08-20 |
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