JP6828472B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6828472B2 JP6828472B2 JP2017016470A JP2017016470A JP6828472B2 JP 6828472 B2 JP6828472 B2 JP 6828472B2 JP 2017016470 A JP2017016470 A JP 2017016470A JP 2017016470 A JP2017016470 A JP 2017016470A JP 6828472 B2 JP6828472 B2 JP 6828472B2
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- 239000004065 semiconductor Substances 0.000 title claims description 79
- 239000000758 substrate Substances 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 10
- 230000005684 electric field Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- -1 region Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特許第3117023号公報
[特許文献2] 特許第2712098号公報
Claims (7)
- 半導体基板を備える半導体装置であって、
前記半導体基板は、
前記半導体基板の表面の端部において予め定められた深さ範囲に設けられた不純物領域である外縁領域を含むエッジ終端部と、
前記半導体基板の前記表面の前記外縁領域よりも内側において予め定められた深さ範囲に設けられ、前記半導体基板のドリフト領域とは異なる導電型の不純物領域であるウェル領域を含む活性部と
を有し、
前記半導体装置は、
前記半導体基板の前記表面上において、少なくとも前記外縁領域と前記ウェル領域との間に設けられ、テーパー部を有する絶縁膜と、
前記絶縁膜上に設けられ、前記外縁領域と前記ウェル領域とに電気的に接続する抵抗膜と
をさらに備え、
前記絶縁膜の前記テーパー部のテーパー角が60度以下である
半導体装置。 - 前記半導体基板の前記表面上における前記絶縁膜の厚みは、0.5μm以上である
請求項1に記載の半導体装置。 - 前記テーパー部の上端および下端は、前記半導体基板の前記表面と平行な方向において、前記活性部の前記ウェル領域の外側端部と前記外縁領域の内側端部との間隔の四分の一以上、前記ウェル領域の外側端部から離間している
請求項1または2に記載の半導体装置。 - 前記テーパー部の上端は、前記半導体基板の前記表面と平行な方向において、前記活性部の前記ウェル領域の外側端部と前記外縁領域の内側端部との中間位置よりも前記外縁領域に近接する
請求項1から3のいずれか一項に記載の半導体装置。 - 前記テーパー部の下端は、前記半導体基板の前記表面と平行な方向において、前記活性部の前記ウェル領域の外側端部と前記外縁領域の内側端部との中間位置よりも前記外縁領域に近接する
請求項1から4のいずれか一項に記載の半導体装置。 - 前記絶縁膜は、前記テーパー部を有する第1絶縁膜と、前記第1絶縁膜と前記半導体基板の前記表面との間に位置する第2絶縁膜とを有する
請求項1から5のいずれか一項に記載の半導体装置。 - 前記絶縁膜の内側端部は前記ウェル領域の外側端部よりも内側方向に延在し、かつ、前記絶縁膜の外側端部は前記外縁領域の内側端部よりも外側方向に延在する
請求項1から6のいずれか一項に記載の半導体装置。
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