TW295701B - - Google Patents

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Publication number
TW295701B
TW295701B TW085105977A TW85105977A TW295701B TW 295701 B TW295701 B TW 295701B TW 085105977 A TW085105977 A TW 085105977A TW 85105977 A TW85105977 A TW 85105977A TW 295701 B TW295701 B TW 295701B
Authority
TW
Taiwan
Prior art keywords
region
gate
regions
source
guard ring
Prior art date
Application number
TW085105977A
Other languages
English (en)
Chinese (zh)
Original Assignee
Zh Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14517895A external-priority patent/JP2692037B2/ja
Priority claimed from JP14517995A external-priority patent/JP2700870B2/ja
Application filed by Zh Handotai Kenkyu Shinkokai filed Critical Zh Handotai Kenkyu Shinkokai
Application granted granted Critical
Publication of TW295701B publication Critical patent/TW295701B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
TW085105977A 1995-05-22 1996-05-21 TW295701B (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14517895A JP2692037B2 (ja) 1995-05-22 1995-05-22 静電誘導トランジスタ及びその製造方法
JP14517995A JP2700870B2 (ja) 1995-05-22 1995-05-22 静電誘導トランジスタ及びその製造方法

Publications (1)

Publication Number Publication Date
TW295701B true TW295701B (enExample) 1997-01-11

Family

ID=26476376

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105977A TW295701B (enExample) 1995-05-22 1996-05-21

Country Status (4)

Country Link
US (1) US5663582A (enExample)
KR (1) KR100389184B1 (enExample)
CN (1) CN1087504C (enExample)
TW (1) TW295701B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US6750477B2 (en) * 1998-09-30 2004-06-15 Hitachi, Ltd. Static induction transistor
JP4017763B2 (ja) * 1998-09-30 2007-12-05 株式会社ルネサステクノロジ 静電誘導トランジスタ
US6750104B2 (en) * 2001-12-31 2004-06-15 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
US6855970B2 (en) * 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
JP4222092B2 (ja) * 2003-05-07 2009-02-12 富士電機デバイステクノロジー株式会社 半導体ウェハ、半導体装置および半導体装置の製造方法
JP4757449B2 (ja) * 2004-01-29 2011-08-24 三菱電機株式会社 半導体装置
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
US7825487B2 (en) * 2008-09-30 2010-11-02 Northrop Grumman Systems Corporation Guard ring structures and method of fabricating thereof
WO2011025973A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor
US10224407B2 (en) 2017-02-28 2019-03-05 Sandisk Technologies Llc High voltage field effect transistor with laterally extended gate dielectric and method of making thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
JP2509127B2 (ja) * 1992-03-04 1996-06-19 財団法人半導体研究振興会 静電誘導デバイス
US5426314A (en) * 1992-07-29 1995-06-20 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate control static induction thyristor

Also Published As

Publication number Publication date
KR100389184B1 (ko) 2004-04-09
US5663582A (en) 1997-09-02
CN1144402A (zh) 1997-03-05
CN1087504C (zh) 2002-07-10

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees