TW317647B - - Google Patents

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Publication number
TW317647B
TW317647B TW085112366A TW85112366A TW317647B TW 317647 B TW317647 B TW 317647B TW 085112366 A TW085112366 A TW 085112366A TW 85112366 A TW85112366 A TW 85112366A TW 317647 B TW317647 B TW 317647B
Authority
TW
Taiwan
Prior art keywords
item
semiconductor
application
silicon
energy gap
Prior art date
Application number
TW085112366A
Other languages
English (en)
Chinese (zh)
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Application granted granted Critical
Publication of TW317647B publication Critical patent/TW317647B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10P14/6349—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW085112366A 1995-10-10 1996-10-09 TW317647B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US498395P 1995-10-10 1995-10-10

Publications (1)

Publication Number Publication Date
TW317647B true TW317647B (enExample) 1997-10-11

Family

ID=21713529

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085112366A TW317647B (enExample) 1995-10-10 1996-10-09

Country Status (9)

Country Link
US (1) US5877515A (enExample)
JP (1) JPH09172159A (enExample)
KR (1) KR970024296A (enExample)
DE (1) DE19641839A1 (enExample)
FR (1) FR2740907B1 (enExample)
GB (1) GB2306250A (enExample)
IT (1) IT1285498B1 (enExample)
SG (1) SG64402A1 (enExample)
TW (1) TW317647B (enExample)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213607A (ja) * 1995-02-08 1996-08-20 Ngk Insulators Ltd 半導体装置およびその製造方法
JP3327135B2 (ja) * 1996-09-09 2002-09-24 日産自動車株式会社 電界効果トランジスタ
JP3461274B2 (ja) * 1996-10-16 2003-10-27 株式会社東芝 半導体装置
JP3206727B2 (ja) * 1997-02-20 2001-09-10 富士電機株式会社 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法
WO1998059374A2 (en) * 1997-06-23 1998-12-30 Cooper James Albert Jr Insulated gate power semiconductor device having a semi-insulating semiconductor substrate
KR20000068738A (ko) * 1997-08-13 2000-11-25 모리시타 요이찌 반도체기판 및 반도체소자
DE19741928C1 (de) * 1997-09-10 1998-09-24 Siemens Ag Halbleiterbauelement
US6448160B1 (en) * 1999-04-01 2002-09-10 Apd Semiconductor, Inc. Method of fabricating power rectifier device to vary operating parameters and resulting device
US6420225B1 (en) 1999-04-01 2002-07-16 Apd Semiconductor, Inc. Method of fabricating power rectifier device
US6624030B2 (en) 2000-12-19 2003-09-23 Advanced Power Devices, Inc. Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
US6498367B1 (en) 1999-04-01 2002-12-24 Apd Semiconductor, Inc. Discrete integrated circuit rectifier device
US6331455B1 (en) 1999-04-01 2001-12-18 Advanced Power Devices, Inc. Power rectifier device and method of fabricating power rectifier devices
WO2001018872A1 (en) * 1999-09-07 2001-03-15 Sixon Inc. SiC WAFER, SiC SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SiC WAFER
US6303508B1 (en) 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
US6407014B1 (en) 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
US6537860B2 (en) 2000-12-18 2003-03-25 Apd Semiconductor, Inc. Method of fabricating power VLSI diode devices
US6859074B2 (en) * 2001-01-09 2005-02-22 Broadcom Corporation I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off
EP1267415A3 (en) * 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Power semiconductor device having resurf layer
JP4288907B2 (ja) * 2001-08-29 2009-07-01 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2003100657A (ja) * 2001-09-20 2003-04-04 Nissan Motor Co Ltd 半導体装置の製造方法
US7138836B2 (en) * 2001-12-03 2006-11-21 Broadcom Corporation Hot carrier injection suppression circuit
JP2003174187A (ja) * 2001-12-07 2003-06-20 Sumitomo Chem Co Ltd 薄膜半導体エピタキシャル基板及びその製造方法
JP3559971B2 (ja) * 2001-12-11 2004-09-02 日産自動車株式会社 炭化珪素半導体装置およびその製造方法
US6515330B1 (en) * 2002-01-02 2003-02-04 Apd Semiconductor, Inc. Power device having vertical current path with enhanced pinch-off for current limiting
US7183575B2 (en) 2002-02-19 2007-02-27 Nissan Motor Co., Ltd. High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode
US7282739B2 (en) * 2002-04-26 2007-10-16 Nissan Motor Co., Ltd. Silicon carbide semiconductor device
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
JP2006245243A (ja) * 2005-03-02 2006-09-14 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US7588961B2 (en) * 2005-03-30 2009-09-15 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP4903439B2 (ja) * 2005-05-31 2012-03-28 株式会社東芝 電界効果トランジスタ
US7589004B2 (en) * 2005-06-21 2009-09-15 Los Alamos National Security, Llc Method for implantation of high dopant concentrations in wide band gap materials
DE102005047054B4 (de) * 2005-09-30 2008-04-03 Infineon Technologies Austria Ag Leistungs-MOS-Transistor mit einer SiC-Driftzone und Verfahren zur Herstellung eines Leistungs-MOS-Transistors
JP2007299845A (ja) * 2006-04-28 2007-11-15 Nissan Motor Co Ltd 半導体装置の製造方法および半導体装置
DE102007004320A1 (de) * 2007-01-29 2008-07-31 Infineon Technologies Ag Halbleiterbauelement mit vertikalen Strukturen von hohem Aspektverhältnis und Verfahren zur Herstellung einer kapazitiven Struktur in einem Halbleiterkörper
WO2009042807A2 (en) * 2007-09-26 2009-04-02 Lakota Technologies, Inc. Adjustable field effect rectifier
US8643055B2 (en) * 2007-09-26 2014-02-04 Stmicroelectronics N.V. Series current limiter device
US8148748B2 (en) 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
US8492771B2 (en) 2007-09-27 2013-07-23 Infineon Technologies Austria Ag Heterojunction semiconductor device and method
US20090159896A1 (en) * 2007-12-20 2009-06-25 General Electric Company Silicon carbide mosfet devices and methods of making
WO2010080855A2 (en) 2009-01-06 2010-07-15 Lakota Technologies Inc. Self-bootstrapping field effect diode structures and methods
SG183740A1 (en) * 2009-02-20 2012-09-27 Semiconductor Energy Lab Semiconductor device and manufacturing method of the same
JP5699628B2 (ja) * 2010-07-26 2015-04-15 住友電気工業株式会社 半導体装置
IT1401754B1 (it) * 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
IT1401755B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
US8389348B2 (en) * 2010-09-14 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
GB2484506A (en) * 2010-10-13 2012-04-18 Univ Warwick Heterogrowth
DE102011053641A1 (de) * 2011-09-15 2013-03-21 Infineon Technologies Ag SiC-MOSFET mit hoher Kanalbeweglichkeit
CN104347708A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(北京)有限公司 多栅vdmos晶体管及其形成方法
JP6228850B2 (ja) 2014-01-10 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6237408B2 (ja) * 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN105336775B (zh) * 2014-07-01 2018-03-09 无锡华润华晶微电子有限公司 一种vdmos器件的元胞结构及其制作方法
US10147813B2 (en) 2016-03-04 2018-12-04 United Silicon Carbide, Inc. Tunneling field effect transistor
CN105810722B (zh) * 2016-03-16 2019-04-30 中国科学院半导体研究所 一种碳化硅mosfet器件及其制备方法
CN107086243A (zh) * 2017-03-16 2017-08-22 西安电子科技大学 具有宽带隙材料与硅材料复合的u‑mosfet
US10957791B2 (en) * 2019-03-08 2021-03-23 Infineon Technologies Americas Corp. Power device with low gate charge and low figure of merit
CN110429137B (zh) * 2019-08-15 2020-08-21 西安电子科技大学 具有部分氮化镓/硅半导体材料异质结的vdmos及其制作方法
US10777689B1 (en) 2019-10-18 2020-09-15 Hong Kong Applied Science and Technology Research Institute Company, Limited Silicon-carbide shielded-MOSFET embedded with a trench Schottky diode and heterojunction gate
CN116741639B (zh) * 2023-06-20 2025-04-18 中国科学院上海微系统与信息技术研究所 半导体器件的制备方法及半导体器件
CN116774469B (zh) * 2023-06-20 2024-06-28 中国科学院上海微系统与信息技术研究所 一种器件的制备方法及结构
CN116646401B (zh) * 2023-07-19 2024-01-23 成都蓉矽半导体有限公司 一种碳化硅异质结的共源共栅mosfet器件
CN116895699A (zh) * 2023-09-08 2023-10-17 成都蓉矽半导体有限公司 一种具有异质结的共源共栅沟槽mosfet及制备方法
WO2025122193A1 (en) * 2023-12-05 2025-06-12 Microchip Technology Incorporated Trench power semiconductor device and method for manufacturing same
CN117438446A (zh) * 2023-12-18 2024-01-23 深圳天狼芯半导体有限公司 一种具有异质结的平面vdmos及制备方法
CN117423729A (zh) * 2023-12-18 2024-01-19 深圳天狼芯半导体有限公司 一种具有异质结的沟槽栅vdmos及制备方法
CN119922947B (zh) * 2024-12-23 2025-11-21 天津光电集团有限公司 一种SiC材料的MOSFET器件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2159592A5 (en) * 1971-11-04 1973-06-22 Anvar Beta-silicon carbide/silicon semiconductor device - made by epitaxial growth
JPS60136223A (ja) * 1983-12-23 1985-07-19 Sharp Corp 炭化珪素半導体素子の製造方法
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
JPH04335538A (ja) * 1991-05-10 1992-11-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0521762A (ja) * 1991-07-10 1993-01-29 Mitsubishi Electric Corp 電界効果型トランジスタを備えた半導体装置およびその製造方法
US5234848A (en) * 1991-11-05 1993-08-10 Texas Instruments Incorporated Method for fabricating lateral resonant tunneling transistor with heterojunction barriers
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
US5510275A (en) * 1993-11-29 1996-04-23 Texas Instruments Incorporated Method of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor material
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate

Also Published As

Publication number Publication date
ITMI962098A1 (it) 1998-04-10
GB2306250A (en) 1997-04-30
US5877515A (en) 1999-03-02
IT1285498B1 (it) 1998-06-08
GB9621170D0 (en) 1996-11-27
KR970024296A (ko) 1997-05-30
SG64402A1 (en) 1999-04-27
DE19641839A1 (de) 1997-05-15
FR2740907B1 (fr) 1999-05-14
FR2740907A1 (fr) 1997-05-09
JPH09172159A (ja) 1997-06-30

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