KR970024296A - 탄화실리콘(SiC) 반도체 소자 (SiC SEMICONDUCTOR DEVICE) - Google Patents

탄화실리콘(SiC) 반도체 소자 (SiC SEMICONDUCTOR DEVICE) Download PDF

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Publication number
KR970024296A
KR970024296A KR1019960044989A KR19960044989A KR970024296A KR 970024296 A KR970024296 A KR 970024296A KR 1019960044989 A KR1019960044989 A KR 1019960044989A KR 19960044989 A KR19960044989 A KR 19960044989A KR 970024296 A KR970024296 A KR 970024296A
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KR
South Korea
Prior art keywords
semiconductor
epitaxial layer
silicon
high band
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019960044989A
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English (en)
Korean (ko)
Inventor
자나다난 에스 에이지트
Original Assignee
클레버터 레슬리 씨.
인터내쇼널 렉티파이어 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 클레버터 레슬리 씨., 인터내쇼널 렉티파이어 코포레이션 filed Critical 클레버터 레슬리 씨.
Publication of KR970024296A publication Critical patent/KR970024296A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10P14/6349—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019960044989A 1995-10-10 1996-10-10 탄화실리콘(SiC) 반도체 소자 (SiC SEMICONDUCTOR DEVICE) Withdrawn KR970024296A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US498395P 1995-10-10 1995-10-10
US60/004,983 1995-10-10

Publications (1)

Publication Number Publication Date
KR970024296A true KR970024296A (ko) 1997-05-30

Family

ID=21713529

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960044989A Withdrawn KR970024296A (ko) 1995-10-10 1996-10-10 탄화실리콘(SiC) 반도체 소자 (SiC SEMICONDUCTOR DEVICE)

Country Status (9)

Country Link
US (1) US5877515A (enExample)
JP (1) JPH09172159A (enExample)
KR (1) KR970024296A (enExample)
DE (1) DE19641839A1 (enExample)
FR (1) FR2740907B1 (enExample)
GB (1) GB2306250A (enExample)
IT (1) IT1285498B1 (enExample)
SG (1) SG64402A1 (enExample)
TW (1) TW317647B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010023873A (ko) * 1997-09-10 2001-03-26 인피니언 테크놀로지스 아게 드리프트 구역을 가진 반도체 소자

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JP3327135B2 (ja) * 1996-09-09 2002-09-24 日産自動車株式会社 電界効果トランジスタ
JP3461274B2 (ja) * 1996-10-16 2003-10-27 株式会社東芝 半導体装置
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JP3559971B2 (ja) * 2001-12-11 2004-09-02 日産自動車株式会社 炭化珪素半導体装置およびその製造方法
US6515330B1 (en) * 2002-01-02 2003-02-04 Apd Semiconductor, Inc. Power device having vertical current path with enhanced pinch-off for current limiting
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US8643055B2 (en) * 2007-09-26 2014-02-04 Stmicroelectronics N.V. Series current limiter device
US8148748B2 (en) 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
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JP5699628B2 (ja) * 2010-07-26 2015-04-15 住友電気工業株式会社 半導体装置
IT1401754B1 (it) * 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
IT1401755B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
US8389348B2 (en) * 2010-09-14 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
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CN104347708A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(北京)有限公司 多栅vdmos晶体管及其形成方法
JP6228850B2 (ja) 2014-01-10 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6237408B2 (ja) * 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN105336775B (zh) * 2014-07-01 2018-03-09 无锡华润华晶微电子有限公司 一种vdmos器件的元胞结构及其制作方法
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Publication number Priority date Publication date Assignee Title
KR20010023873A (ko) * 1997-09-10 2001-03-26 인피니언 테크놀로지스 아게 드리프트 구역을 가진 반도체 소자

Also Published As

Publication number Publication date
ITMI962098A1 (it) 1998-04-10
GB2306250A (en) 1997-04-30
US5877515A (en) 1999-03-02
IT1285498B1 (it) 1998-06-08
TW317647B (enExample) 1997-10-11
GB9621170D0 (en) 1996-11-27
SG64402A1 (en) 1999-04-27
DE19641839A1 (de) 1997-05-15
FR2740907B1 (fr) 1999-05-14
FR2740907A1 (fr) 1997-05-09
JPH09172159A (ja) 1997-06-30

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