KR950015611A - 측방향 반도체-온-절연체(soi) 소자 - Google Patents

측방향 반도체-온-절연체(soi) 소자 Download PDF

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KR950015611A
KR950015611A KR1019940029224A KR19940029224A KR950015611A KR 950015611 A KR950015611 A KR 950015611A KR 1019940029224 A KR1019940029224 A KR 1019940029224A KR 19940029224 A KR19940029224 A KR 19940029224A KR 950015611 A KR950015611 A KR 950015611A
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semiconductor
lateral
region
insulator
semiconductor material
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비. 페인 하워드
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에프. 제이. 스미트
필립스 일렉트로닉스 엔. 브이.
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
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    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution

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Abstract

본 발명의 측방향 반도체-온-절연체 소자는 기판과, 기판상의 매립된 절연층과, 절연층상의 LDMOS 트랜지스터와 같은 측방향 반도체 소자를 포함하다. 이 반도체 소자는 소스영영, 채널영역위의 절연된 게이트 전극, 매립된 절연층상의 축방향 드리프트영역 및 채널영역으로부터 측방향으로 분리되고 드리프트영역에 의해 채널영역에 접속되는 드레인영역을 포함한다. 본 발명에 따르면, 반도체 소자의 일부분이 제1반도체 물질내에 만들어지고 측방향 드리프트영역이 넓은 밴드갭의 제2반노체 물질로 이루어진다. 실리콘이나 게르마늄 또는 이들의 조합과 같은 제 1반도체 물질은 처리가 용이하며, 넓은 밴트갭의 제2반도체 물질은 고전압과 양호한 동작가능한 특성들을 부여한다.

Description

측방향 반도체-온-절연체(SOI) 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 LDMOS 트랜지스터의 제1실싱예의 단면도.
제3도는 본 발며에 따른 LDMOS 트랜지스터의 제2실시예의 단면도.

Claims (10)

  1. 기판과, 상기 기판상의 매립된 절연층과, 상기 절연층상의 측방항 반도체 소자를 구비하되, 상기 반도체 소자는 제1전도성 타입의 소스영역과, 상기 제1전도성 타입과 반대인 제2전도성 타입의 채널영역과, 상기 채널 영역위에 위치한 절연된 게이트 전극과, 상기 매립된 절연층상의 상기 제1전도성 타입의 측방향 드리프트영역과, 상기 채널영역으로부터 축방향으로 이격되고 상기 드리프트 영역에 의해 상기 채널영역에 접속되는 상기 제1전도성 타입의 드레인 영역을 포함하는 측방향 반도체-온-절연체(S0I) 소자에 있어서, 상기 반도체 소자의 일부분이 제1반도체 물질내에서 만들어지고, 상기 측방향 드리프트영역은 넓은 밴드갭 반도체 물질로 이루어지는 것을 특징으로 하는 측방향 반도체-온-절연체.
  2. 제1항에 있어서, 상기 일부분은 드레인 영역을 포함하고, 상기 드레인 영역은 상기 드리프트영역의 상부에 제공된 제1반도체 물질층내에 제공되는 것을 특징으로 하는 측방향 반도체-온-절연체.
  3. 제2항에 있어서, 상기 일부분은 또한 상기 소스영역과 상기 채널영역의 적어도 일부를 포함하고, 이들 소스 및 채널영역은 또한 상기 드리프트영역의 상부에 제공된 제1반도체 물질층에 제공되는 것을 특징으로 하는 측방향 반도체-온-절연체.
  4. 제2항에 있어서, 상기 소스 영역과 상기 채널영역은 넓은 밴드갭의 제2반도체 물질내에 적어도 부분적으로 제공되는 것을 특징으로 하는 측방향 반도체-온-절연체.
  5. 제1항 내지 제4항중 어느 한 항에 있어서, 또다른 반도체 소자들이 제1반도체 물질에 제공되는 것을 특징으로 하는 측방향 반도테-온-절연체.
  6. 제1항 내지 제5항중 어느 한 항에 있어서, 상기 드레인 영역은 그 드레인 영역을 향하는 도펀트(dopant)가 증가하는 실질적으로 선형의 측방향 도핑 프로빌을 가지는 것을 특징으로 하는 측방향 반도체-온-절연체.
  7. 제6항에 있어서, 상기 드리프트영역은 상기 채널영역층에서 약 1011~5×1012at/㎠의 도핑량 및 상기 드레인영역측에서 1013~1015at/㎠의 도핑량을 가지는 것을 특징으로 하는 측방향 반도체-온-절연체.
  8. 제1항 내지 제7항중 어느 한 항에 있어서, 상기 제1반도체 물질은 실리콘을 포함하고, 상기 넓은 밴드갭의 제2반도체 물질은 실리콘 카바이드를 포함하는 것을 특징으로 하는 측방향 반도체-온-절연체.
  9. 제1항 내지 제8항중 어느 한 항에 있어서, 상기 드리프트영역은 약 0.05∼2.0㎛의 두께를 가지는 것을 특징으로 하는 측방향 반도체-온-절연체(SOI).
  10. 제1항 내지 제9항중 어느 한 항에 있어서, 상기 측방향 드리프트영역의 대부분의 영역위에는 전계 산화물층이 제공되고, 상기 전계 산화물층의 적어도 일부분 위에는 상기 게이트 전극이 연장하는 것을 특징으로 하는 측방향 반도체-온-절연 체.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940029224A 1993-11-10 1994-11-09 횡형 반도체-온-절연체 디바이스 KR100359712B1 (ko)

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Application Number Priority Date Filing Date Title
US08/151,075 1993-11-10
US8/151,075 1993-11-10
US08/151,075 US5378912A (en) 1993-11-10 1993-11-10 Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region

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KR950015611A true KR950015611A (ko) 1995-06-17
KR100359712B1 KR100359712B1 (ko) 2003-01-24

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US (1) US5378912A (ko)
EP (1) EP0652599B1 (ko)
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DE (1) DE69403306T2 (ko)

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