TW301797B - - Google Patents
Download PDFInfo
- Publication number
- TW301797B TW301797B TW085101217A TW85101217A TW301797B TW 301797 B TW301797 B TW 301797B TW 085101217 A TW085101217 A TW 085101217A TW 85101217 A TW85101217 A TW 85101217A TW 301797 B TW301797 B TW 301797B
- Authority
- TW
- Taiwan
- Prior art keywords
- doping concentration
- breakdown voltage
- layer
- conductivity type
- gate
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 claims description 29
- 239000012212 insulator Substances 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/413,319 US5661312A (en) | 1995-03-30 | 1995-03-30 | Silicon carbide MOSFET |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW301797B true TW301797B (enExample) | 1997-04-01 |
Family
ID=23636788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085101217A TW301797B (enExample) | 1995-03-30 | 1996-01-31 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5661312A (enExample) |
| JP (1) | JPH08274335A (enExample) |
| KR (1) | KR960036128A (enExample) |
| DE (1) | DE19605816A1 (enExample) |
| TW (1) | TW301797B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0735591B1 (en) * | 1995-03-31 | 1999-09-08 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Improved DMOS device structure, and related manufacturing process |
| JP3618517B2 (ja) * | 1997-06-18 | 2005-02-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US7154153B1 (en) | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
| US6746893B1 (en) | 1997-07-29 | 2004-06-08 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
| US6794255B1 (en) | 1997-07-29 | 2004-09-21 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
| US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
| US7196929B1 (en) | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
| US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
| US6031263A (en) | 1997-07-29 | 2000-02-29 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
| JP4192281B2 (ja) | 1997-11-28 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置 |
| US6903373B1 (en) * | 1999-11-23 | 2005-06-07 | Agere Systems Inc. | SiC MOSFET for use as a power switch and a method of manufacturing the same |
| US6955978B1 (en) * | 2001-12-20 | 2005-10-18 | Fairchild Semiconductor Corporation | Uniform contact |
| US7221010B2 (en) * | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
| US7033912B2 (en) * | 2004-01-22 | 2006-04-25 | Cree, Inc. | Silicon carbide on diamond substrates and related devices and methods |
| US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
| US7294324B2 (en) * | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
| US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
| US7709269B2 (en) | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
| US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
| IT1401754B1 (it) | 2010-08-30 | 2013-08-02 | St Microelectronics Srl | Dispositivo elettronico integrato e relativo metodo di fabbricazione. |
| IT1401755B1 (it) | 2010-08-30 | 2013-08-02 | St Microelectronics Srl | Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione. |
| IT1401756B1 (it) | 2010-08-30 | 2013-08-02 | St Microelectronics Srl | Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione. |
| TWI520337B (zh) | 2012-12-19 | 2016-02-01 | 財團法人工業技術研究院 | 階梯溝渠式金氧半場效電晶體及其製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0418762A (ja) * | 1990-05-14 | 1992-01-22 | Hitachi Ltd | 絶縁ゲート形電界効果トランジスタ |
| US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
| US5391895A (en) * | 1992-09-21 | 1995-02-21 | Kobe Steel Usa, Inc. | Double diamond mesa vertical field effect transistor |
| US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
| JP3285435B2 (ja) * | 1993-07-07 | 2002-05-27 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH0799312A (ja) * | 1993-02-22 | 1995-04-11 | Texas Instr Inc <Ti> | 半導体装置とその製法 |
| US5397717A (en) * | 1993-07-12 | 1995-03-14 | Motorola, Inc. | Method of fabricating a silicon carbide vertical MOSFET |
| US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
| US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
-
1995
- 1995-03-30 US US08/413,319 patent/US5661312A/en not_active Expired - Lifetime
-
1996
- 1996-01-31 TW TW085101217A patent/TW301797B/zh active
- 1996-02-16 DE DE19605816A patent/DE19605816A1/de not_active Withdrawn
- 1996-02-29 KR KR1019960005641A patent/KR960036128A/ko not_active Ceased
- 1996-03-27 JP JP8097487A patent/JPH08274335A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US5661312A (en) | 1997-08-26 |
| DE19605816A1 (de) | 1996-10-02 |
| JPH08274335A (ja) | 1996-10-18 |
| KR960036128A (ko) | 1996-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW301797B (enExample) | ||
| US8237195B2 (en) | Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate | |
| JP3385938B2 (ja) | 炭化珪素半導体装置及びその製造方法 | |
| JP5586887B2 (ja) | 半導体装置及びその製造方法 | |
| JP3393148B2 (ja) | 高電圧パワートランジスタ | |
| US5569937A (en) | High breakdown voltage silicon carbide transistor | |
| TW200535949A (en) | High voltage lateral fet structure with improved on resistance performance | |
| US7074681B2 (en) | Semiconductor component and method of manufacturing | |
| JPH0621468A (ja) | 絶縁ゲート型半導体装置 | |
| US7476932B2 (en) | U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based semiconductor devices | |
| KR20010020486A (ko) | 폭이 넓은 밴드갭 반도체 내의 전력 소자 | |
| JP2020126932A (ja) | トレンチゲート型半導体装置 | |
| EP0802567A3 (en) | Semiconductor device and manufacturing method thereof | |
| JPH01232765A (ja) | 絶縁ゲート電界効果トランジスタ | |
| US5291050A (en) | MOS device having reduced gate-to-drain capacitance | |
| JP3402043B2 (ja) | 電界効果トランジスタ | |
| JPH0456473B2 (enExample) | ||
| JPH07211917A (ja) | 横形ｍｏｓ電界効果トランジスタ | |
| KR19990069332A (ko) | 트랜치 게이트형 전력용 모스 소자 및 그 제조방법 | |
| CN218996721U (zh) | 一种沟槽碳化硅mosfet器件 | |
| CN116978927A (zh) | 宽带隙半导体器件 | |
| JPH04356966A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| JP2024516508A (ja) | 電力半導体装置および電力半導体装置を製造するための方法 | |
| JPS63254769A (ja) | 縦型絶縁ゲ−ト電界効果トランジスタ | |
| JP3217488B2 (ja) | 高耐圧半導体装置 |