JPH08274335A - シリコンカーバイドｍｏｓｆｅｔ - Google Patents

シリコンカーバイドｍｏｓｆｅｔ

Info

Publication number
JPH08274335A
JPH08274335A JP8097487A JP9748796A JPH08274335A JP H08274335 A JPH08274335 A JP H08274335A JP 8097487 A JP8097487 A JP 8097487A JP 9748796 A JP9748796 A JP 9748796A JP H08274335 A JPH08274335 A JP H08274335A
Authority
JP
Japan
Prior art keywords
layer
doping concentration
enhancement layer
breakdown
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8097487A
Other languages
English (en)
Japanese (ja)
Inventor
Charles E Weitzel
チャールズ・イー・ウェイツェル
Mohit Bhatnagar
モヒト・バトナガー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPH08274335A publication Critical patent/JPH08274335A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8097487A 1995-03-30 1996-03-27 シリコンカーバイドｍｏｓｆｅｔ Pending JPH08274335A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/413,319 1995-03-30
US08/413,319 US5661312A (en) 1995-03-30 1995-03-30 Silicon carbide MOSFET

Publications (1)

Publication Number Publication Date
JPH08274335A true JPH08274335A (ja) 1996-10-18

Family

ID=23636788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8097487A Pending JPH08274335A (ja) 1995-03-30 1996-03-27 シリコンカーバイドｍｏｓｆｅｔ

Country Status (5)

Country Link
US (1) US5661312A (enExample)
JP (1) JPH08274335A (enExample)
KR (1) KR960036128A (enExample)
DE (1) DE19605816A1 (enExample)
TW (1) TW301797B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0735591B1 (en) * 1995-03-31 1999-09-08 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Improved DMOS device structure, and related manufacturing process
JP3618517B2 (ja) * 1997-06-18 2005-02-09 三菱電機株式会社 半導体装置およびその製造方法
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6031263A (en) 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
JP4192281B2 (ja) 1997-11-28 2008-12-10 株式会社デンソー 炭化珪素半導体装置
US6903373B1 (en) * 1999-11-23 2005-06-07 Agere Systems Inc. SiC MOSFET for use as a power switch and a method of manufacturing the same
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
IT1401754B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
IT1401755B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
TWI520337B (zh) 2012-12-19 2016-02-01 財團法人工業技術研究院 階梯溝渠式金氧半場效電晶體及其製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0418762A (ja) * 1990-05-14 1992-01-22 Hitachi Ltd 絶縁ゲート形電界効果トランジスタ
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
US5391895A (en) * 1992-09-21 1995-02-21 Kobe Steel Usa, Inc. Double diamond mesa vertical field effect transistor
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
JP3285435B2 (ja) * 1993-07-07 2002-05-27 三菱電機株式会社 半導体装置およびその製造方法
JPH0799312A (ja) * 1993-02-22 1995-04-11 Texas Instr Inc <Ti> 半導体装置とその製法
US5397717A (en) * 1993-07-12 1995-03-14 Motorola, Inc. Method of fabricating a silicon carbide vertical MOSFET
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate

Also Published As

Publication number Publication date
US5661312A (en) 1997-08-26
TW301797B (enExample) 1997-04-01
DE19605816A1 (de) 1996-10-02
KR960036128A (ko) 1996-10-28

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