KR960036128A - 실리콘 탄화물 금속 산화물 반도체 전계효과 트랜지스터 - Google Patents

실리콘 탄화물 금속 산화물 반도체 전계효과 트랜지스터 Download PDF

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Publication number
KR960036128A
KR960036128A KR1019960005641A KR19960005641A KR960036128A KR 960036128 A KR960036128 A KR 960036128A KR 1019960005641 A KR1019960005641 A KR 1019960005641A KR 19960005641 A KR19960005641 A KR 19960005641A KR 960036128 A KR960036128 A KR 960036128A
Authority
KR
South Korea
Prior art keywords
doping concentration
metal oxide
oxide semiconductor
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019960005641A
Other languages
English (en)
Korean (ko)
Inventor
이.웨이첼 찰스
바트나가 모히트
Original Assignee
빈센트 비.인그라시아
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 비.인그라시아, 모토로라 인코포레이티드 filed Critical 빈센트 비.인그라시아
Publication of KR960036128A publication Critical patent/KR960036128A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019960005641A 1995-03-30 1996-02-29 실리콘 탄화물 금속 산화물 반도체 전계효과 트랜지스터 Ceased KR960036128A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US413,319 1995-03-30
US08/413,319 US5661312A (en) 1995-03-30 1995-03-30 Silicon carbide MOSFET

Publications (1)

Publication Number Publication Date
KR960036128A true KR960036128A (ko) 1996-10-28

Family

ID=23636788

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960005641A Ceased KR960036128A (ko) 1995-03-30 1996-02-29 실리콘 탄화물 금속 산화물 반도체 전계효과 트랜지스터

Country Status (5)

Country Link
US (1) US5661312A (enExample)
JP (1) JPH08274335A (enExample)
KR (1) KR960036128A (enExample)
DE (1) DE19605816A1 (enExample)
TW (1) TW301797B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100774112B1 (ko) * 1999-11-23 2007-11-07 루센트 테크놀러지스 인크 전력 스위치로 사용하기 위한 탄화규소 n 채널 금속 산화물 전계 효과 트랜지스터 및 그 제조 방법

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69512021T2 (de) * 1995-03-31 2000-05-04 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania DMOS-Anordnung-Struktur und Verfahren zur Herstellung
JP3618517B2 (ja) * 1997-06-18 2005-02-09 三菱電機株式会社 半導体装置およびその製造方法
US7196929B1 (en) * 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6965123B1 (en) * 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6031263A (en) 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
JP4192281B2 (ja) 1997-11-28 2008-12-10 株式会社デンソー 炭化珪素半導体装置
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
IT1401754B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
IT1401755B1 (it) * 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
TWI520337B (zh) 2012-12-19 2016-02-01 財團法人工業技術研究院 階梯溝渠式金氧半場效電晶體及其製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0418762A (ja) * 1990-05-14 1992-01-22 Hitachi Ltd 絶縁ゲート形電界効果トランジスタ
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
US5391895A (en) * 1992-09-21 1995-02-21 Kobe Steel Usa, Inc. Double diamond mesa vertical field effect transistor
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
JP3285435B2 (ja) * 1993-07-07 2002-05-27 三菱電機株式会社 半導体装置およびその製造方法
JPH0799312A (ja) * 1993-02-22 1995-04-11 Texas Instr Inc <Ti> 半導体装置とその製法
US5397717A (en) * 1993-07-12 1995-03-14 Motorola, Inc. Method of fabricating a silicon carbide vertical MOSFET
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100774112B1 (ko) * 1999-11-23 2007-11-07 루센트 테크놀러지스 인크 전력 스위치로 사용하기 위한 탄화규소 n 채널 금속 산화물 전계 효과 트랜지스터 및 그 제조 방법

Also Published As

Publication number Publication date
US5661312A (en) 1997-08-26
JPH08274335A (ja) 1996-10-18
DE19605816A1 (de) 1996-10-02
TW301797B (enExample) 1997-04-01

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