CN1087504C - 高输出功率的高频静态感应晶体管 - Google Patents

高输出功率的高频静态感应晶体管 Download PDF

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Publication number
CN1087504C
CN1087504C CN96110070A CN96110070A CN1087504C CN 1087504 C CN1087504 C CN 1087504C CN 96110070 A CN96110070 A CN 96110070A CN 96110070 A CN96110070 A CN 96110070A CN 1087504 C CN1087504 C CN 1087504C
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CN
China
Prior art keywords
region
gate
regions
guard ring
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96110070A
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English (en)
Chinese (zh)
Other versions
CN1144402A (zh
Inventor
西泽润一
本谷薰
伊藤彰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Digital multi Limited by Share Ltd
Original Assignee
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14517895A external-priority patent/JP2692037B2/ja
Priority claimed from JP14517995A external-priority patent/JP2700870B2/ja
Application filed by Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zaidan Hojin Handotai Kenkyu Shinkokai
Publication of CN1144402A publication Critical patent/CN1144402A/zh
Application granted granted Critical
Publication of CN1087504C publication Critical patent/CN1087504C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

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  • Junction Field-Effect Transistors (AREA)
CN96110070A 1995-05-22 1996-05-22 高输出功率的高频静态感应晶体管 Expired - Fee Related CN1087504C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP145178/95 1995-05-22
JP14517895A JP2692037B2 (ja) 1995-05-22 1995-05-22 静電誘導トランジスタ及びその製造方法
JP145179/95 1995-05-22
JP14517995A JP2700870B2 (ja) 1995-05-22 1995-05-22 静電誘導トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
CN1144402A CN1144402A (zh) 1997-03-05
CN1087504C true CN1087504C (zh) 2002-07-10

Family

ID=26476376

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96110070A Expired - Fee Related CN1087504C (zh) 1995-05-22 1996-05-22 高输出功率的高频静态感应晶体管

Country Status (4)

Country Link
US (1) US5663582A (enExample)
KR (1) KR100389184B1 (enExample)
CN (1) CN1087504C (enExample)
TW (1) TW295701B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101266976B (zh) * 2004-01-29 2010-06-16 三菱电机株式会社 半导体器件

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
JP4017763B2 (ja) * 1998-09-30 2007-12-05 株式会社ルネサステクノロジ 静電誘導トランジスタ
US6750477B2 (en) * 1998-09-30 2004-06-15 Hitachi, Ltd. Static induction transistor
US6750104B2 (en) * 2001-12-31 2004-06-15 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
US6855970B2 (en) * 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
JP4222092B2 (ja) * 2003-05-07 2009-02-12 富士電機デバイステクノロジー株式会社 半導体ウェハ、半導体装置および半導体装置の製造方法
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
US7825487B2 (en) * 2008-09-30 2010-11-02 Northrop Grumman Systems Corporation Guard ring structures and method of fabricating thereof
WO2011025973A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor
US10224407B2 (en) 2017-02-28 2019-03-05 Sandisk Technologies Llc High voltage field effect transistor with laterally extended gate dielectric and method of making thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323029A (en) * 1992-03-04 1994-06-21 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US5426314A (en) * 1992-07-29 1995-06-20 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate control static induction thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323029A (en) * 1992-03-04 1994-06-21 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101266976B (zh) * 2004-01-29 2010-06-16 三菱电机株式会社 半导体器件

Also Published As

Publication number Publication date
TW295701B (enExample) 1997-01-11
KR100389184B1 (ko) 2004-04-09
US5663582A (en) 1997-09-02
CN1144402A (zh) 1997-03-05

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GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SHUWEI DUOMEI CO., LTD.

Free format text: FORMER OWNER: SEMICONDUCTOR RESEARCH FOUNDATION PROMOTION GROUP

Effective date: 20080516

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20080516

Address after: Tokyo, Japan, Japan

Patentee after: Digital multi Limited by Share Ltd

Address before: Miyagi Prefecture in Japan

Patentee before: Zaidan Hojin Handotai Kenkyu Shinkokai

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20020710

Termination date: 20130522