JP2005217152A5 - - Google Patents
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- Publication number
- JP2005217152A5 JP2005217152A5 JP2004021476A JP2004021476A JP2005217152A5 JP 2005217152 A5 JP2005217152 A5 JP 2005217152A5 JP 2004021476 A JP2004021476 A JP 2004021476A JP 2004021476 A JP2004021476 A JP 2004021476A JP 2005217152 A5 JP2005217152 A5 JP 2005217152A5
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- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004021476A JP4757449B2 (ja) | 2004-01-29 | 2004-01-29 | 半導体装置 |
| US10/981,509 US7582918B2 (en) | 2004-01-29 | 2004-11-05 | Semiconductor device with enhanced breakdown voltage |
| DE102004059453A DE102004059453B4 (de) | 2004-01-29 | 2004-12-09 | Halbleitervorrichtung |
| CNB2004101011315A CN100394615C (zh) | 2004-01-29 | 2004-12-13 | 半导体器件 |
| CN2009102063644A CN101677099B (zh) | 2004-01-29 | 2004-12-13 | 半导体器件 |
| CN2008100926368A CN101266976B (zh) | 2004-01-29 | 2004-12-13 | 半导体器件 |
| KR1020050006230A KR100641864B1 (ko) | 2004-01-29 | 2005-01-24 | 반도체장치 |
| KR1020060077634A KR100653324B1 (ko) | 2004-01-29 | 2006-08-17 | 반도체장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004021476A JP4757449B2 (ja) | 2004-01-29 | 2004-01-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005217152A JP2005217152A (ja) | 2005-08-11 |
| JP2005217152A5 true JP2005217152A5 (enExample) | 2006-07-13 |
| JP4757449B2 JP4757449B2 (ja) | 2011-08-24 |
Family
ID=34805615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004021476A Expired - Lifetime JP4757449B2 (ja) | 2004-01-29 | 2004-01-29 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7582918B2 (enExample) |
| JP (1) | JP4757449B2 (enExample) |
| KR (2) | KR100641864B1 (enExample) |
| CN (3) | CN101677099B (enExample) |
| DE (1) | DE102004059453B4 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100440505C (zh) * | 2006-09-26 | 2008-12-03 | 无锡博创微电子有限公司 | 耗尽型终端保护结构 |
| JP2010118548A (ja) | 2008-11-13 | 2010-05-27 | Mitsubishi Electric Corp | 半導体装置 |
| WO2010067430A1 (ja) * | 2008-12-10 | 2010-06-17 | トヨタ自動車株式会社 | 半導体装置 |
| JP5535490B2 (ja) * | 2009-01-30 | 2014-07-02 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
| JP5957171B2 (ja) * | 2010-06-30 | 2016-07-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP5748353B2 (ja) * | 2011-05-13 | 2015-07-15 | 株式会社豊田中央研究所 | 横型半導体装置 |
| CN102263128B (zh) * | 2011-08-12 | 2014-04-09 | 淄博美林电子有限公司 | 一种igbt |
| JP5765143B2 (ja) * | 2011-08-30 | 2015-08-19 | 株式会社豊田中央研究所 | 高電子移動度トランジスタとその製造方法 |
| FR2981200B1 (fr) * | 2011-10-10 | 2017-01-13 | Centre Nat De La Rech Scient (Cnrs) | Cellule monolithique de circuit integre et notamment cellule de commutation monolithique |
| CN103871878B (zh) * | 2012-12-10 | 2016-05-04 | 北大方正集团有限公司 | 一种在igbt管栅极下方形成厚场氧的方法 |
| CN104981903B (zh) * | 2013-03-14 | 2017-12-01 | 富士电机株式会社 | 半导体装置 |
| JP5876008B2 (ja) * | 2013-06-03 | 2016-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| DE102014005879B4 (de) * | 2014-04-16 | 2021-12-16 | Infineon Technologies Ag | Vertikale Halbleitervorrichtung |
| JP6665478B2 (ja) * | 2015-10-14 | 2020-03-13 | 富士電機株式会社 | 半導体装置 |
| JP6627445B2 (ja) * | 2015-11-16 | 2020-01-08 | 富士電機株式会社 | 半導体装置 |
| US10424635B2 (en) * | 2016-04-06 | 2019-09-24 | Littelfuse, Inc. | High voltage semiconductor device with guard rings and method associated therewith |
| JP6258561B1 (ja) * | 2016-05-26 | 2018-01-10 | 新電元工業株式会社 | 半導体装置 |
| CN108124494B (zh) * | 2016-09-30 | 2021-10-22 | 新电元工业株式会社 | 半导体装置 |
| WO2018061178A1 (ja) * | 2016-09-30 | 2018-04-05 | 新電元工業株式会社 | 半導体装置 |
| JP6828472B2 (ja) * | 2017-02-01 | 2021-02-10 | 富士電機株式会社 | 半導体装置 |
| CN107146812B (zh) * | 2017-03-29 | 2019-12-03 | 西安电子科技大学 | 增强型栅场板GaN基电流孔径异质结场效应器件及其制作方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02194559A (ja) * | 1989-01-23 | 1990-08-01 | Fuji Electric Co Ltd | 半導体装置 |
| GB9207860D0 (en) * | 1992-04-09 | 1992-05-27 | Philips Electronics Uk Ltd | A semiconductor component |
| JPH07169952A (ja) * | 1993-12-14 | 1995-07-04 | Fuji Electric Co Ltd | 半導体装置 |
| TW295701B (enExample) * | 1995-05-22 | 1997-01-11 | Zh Handotai Kenkyu Shinkokai | |
| JP3331846B2 (ja) | 1995-12-28 | 2002-10-07 | 株式会社日立製作所 | 半導体装置 |
| JP3906504B2 (ja) | 1996-11-27 | 2007-04-18 | 株式会社デンソー | 絶縁分離型半導体装置 |
| JP3191747B2 (ja) | 1997-11-13 | 2001-07-23 | 富士電機株式会社 | Ｍｏｓ型半導体素子 |
| JPH11243200A (ja) | 1998-02-26 | 1999-09-07 | Toshiba Corp | 半導体装置 |
| EP1058318B1 (en) * | 1999-06-03 | 2008-04-16 | STMicroelectronics S.r.l. | Power semiconductor device having an edge termination structure comprising a voltage divider |
| JP4054155B2 (ja) * | 2000-02-01 | 2008-02-27 | 三菱電機株式会社 | 半導体装置 |
| US6614088B1 (en) * | 2000-02-18 | 2003-09-02 | James D. Beasom | Breakdown improvement method and sturcture for lateral DMOS device |
| JP4696356B2 (ja) * | 2000-12-14 | 2011-06-08 | 株式会社デンソー | 半導体装置 |
| JP4357753B2 (ja) * | 2001-01-26 | 2009-11-04 | 株式会社東芝 | 高耐圧半導体装置 |
| JP2002270742A (ja) | 2001-03-12 | 2002-09-20 | Unisia Jecs Corp | 半導体装置 |
| JP4140232B2 (ja) * | 2001-12-07 | 2008-08-27 | 株式会社デンソー | 半導体装置 |
| JP2003188381A (ja) * | 2001-12-21 | 2003-07-04 | Denso Corp | 半導体装置 |
| US7135718B2 (en) * | 2002-02-20 | 2006-11-14 | Shindengen Electric Manufacturing Co., Ltd. | Diode device and transistor device |
-
2004
- 2004-01-29 JP JP2004021476A patent/JP4757449B2/ja not_active Expired - Lifetime
- 2004-11-05 US US10/981,509 patent/US7582918B2/en not_active Expired - Lifetime
- 2004-12-09 DE DE102004059453A patent/DE102004059453B4/de not_active Expired - Lifetime
- 2004-12-13 CN CN2009102063644A patent/CN101677099B/zh not_active Expired - Lifetime
- 2004-12-13 CN CN2008100926368A patent/CN101266976B/zh not_active Expired - Lifetime
- 2004-12-13 CN CNB2004101011315A patent/CN100394615C/zh not_active Expired - Lifetime
-
2005
- 2005-01-24 KR KR1020050006230A patent/KR100641864B1/ko not_active Expired - Lifetime
-
2006
- 2006-08-17 KR KR1020060077634A patent/KR100653324B1/ko not_active Expired - Lifetime