JP4754877B2 - 液晶表示装置およびその製造方法 - Google Patents
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Description
図1と図2に図示された薄膜トランジスター基板は、下部基板42上にゲート絶縁膜44を間に置き交差するように形成されたゲートライン2およびデータライン4と、その交差部毎に形成された薄膜トランジスター6と、その交差構造で設けられたセル領域に形成された画素電極18を備える。そして、薄膜トランジスター基板は画素電極18と前端ゲートライン2の重なる部分に形成されたストレージキャパシタ20と、ゲートライン2に接続されるゲートパッド26と、データライン4に接続されるデータパッド34を備える。
次に、ストリップ工程でソース/ドレーンパターン上に残っているフォトレジストパターンが除去される。
これによって、ストレージキャパシタ20の容量増大のためにストレージ上部電極22とゲートライン2の重なる面積を増大させる場合、それ位画素電極18の開口率が減少する問題点がある。
図4は本発明の実施例による薄膜トランジスター基板を図示した平面図であり、図5は図4に図示された薄膜トランジスター基板をII−II’、III−III’、IV−IV’線に沿って切断して図示した断面図である。
図13は本発明の第3実施例による薄膜トランジスター基板を図示した平面図であり、図14は図13に図示された薄膜トランジスター基板をII−II’、III−III’、IV−IV’、V−V’線に沿って切断して図示した断面図である。
4,104:データライン
6,106:薄膜トランジスター
8,108:ゲート電極
10,110:ソース電極
12,112:ドレーン電極
14,114:活性層
16,24,30,38,116,130,138:コンタクトホール
18,118:画素電極
20,120,180,190:ストレージキャパシタ
22:ストレージ上部電極
26.126:ゲートパッド
28,128:ゲートパッド下部電極
32,132:ゲートパッド上部電極
34,134:データパッド
36,136:データパッド下部電極
40,140:データパッド上部電極
42,142:基板
44,144:ゲート絶縁膜
48,146:オーミック接触層
50,150:保護膜
101:第1導電層
103:第2導電層
105:ソース/ドレーン金属層
115:非晶質シリコン層
122,194:ストレージ下部電極
145:不純物ドーピングされた非晶質シリコン層
148:半導体パターン
160:ハーフトーンマスク
162,214:遮断層
164:部分透過層
166,212:石英基板
167,219:フォトレジスト
168,220:フォトレジストパターン
168A,220A:第1フォトレジストパターン
168B,220B:第2フォトレジストパターン
170:リペアライン
172:遮光パターン
182,192:共通ライン
210:回折露光マスク
216:スリット
Claims (4)
- ハーフトーンマスクを利用した第1マスク工程で基板上に第1導電層及び第2導電層を含む二重層構造のゲートライン、ゲート電極及びゲートパッド下部電極と前記ゲートラインの前記第1導電層から延長された単一層構造のストレージ下部電極と、前記ゲートラインの前記第2導電層から突き出された単一層構造の遮光パターンを含むゲートパターンを形成する段階と、
前記ゲートパターンを覆うゲート絶縁膜を形成する段階と、
回折露光マスクを利用した第2マスク工程で前記ゲート絶縁膜上にデータライン、ソース電極、ドレーン電極、データパッド下部電極を含むソース/ドレーンパターンと前記ソース/ドレーンパターンの背面に沿って重なる活性層及びオーミック接触層を含む半導体パターンを形成する段階と、
前記ソース/ドレーンパターンを覆う保護膜を形成し、第3マスク工程で前記ドレーン電極を露出させる第1コンタクトホールと、前記ゲートパッド下部電極を露出させる第2コンタクトホール及び前記データパッド下部電極を露出させる第3コンタクトホールを形成する段階と、
前記第1ないし第3コンタクトホールが形成された前記保護膜上に第3導電層を形成した後、第4マスク工程で前記第3導電層をパターニングして前記第1コンタクトホールを通じて前記ドレーン電極と接続される画素電極、前記第2コンタクトホールを通じて前記ゲートパッド下部電極と接続されるゲートパッド上部電極、
前記第3コンタクトホールを通じて前記データパッド下部電極と接続されるデータパッド上部電極を含む透明導電パターンを形成する段階を含み、
前記ゲートパターンを形成する段階は、
前記基板上に前記第1及び第2導電層を積層する段階と、
前記第2導電層上に前記ハーフトーンマスクを利用したフォトリソグラフィー工程で互いに異なる厚さを有する第1及び第2フォトレジストパターンを形成する段階と、
前記第1及び第2フォトレジストパターンを利用した蝕刻工程で前記第1及び第2導電層をパターニングして前記二重層構造のゲートライン及びゲート電極と、ストレージ下部電極を形成する段階と、
前記二重層構造のゲートライン、ゲート電極及びストレージ下部電極を形成した後、アッシング工程で前記第1フォトレジストパターンを薄くし前記第2フォトレジストパターンは除去する段階と、
前記第1フォトレジストパターンを利用した蝕刻工程で前記二重層構造のストレージ下部電極の第2導電層の一部を除去して前記第1及び第2導電層に一定の段差を形成し、前記第1導電層に形成される前記ストレージ下部電極と前記第2導電層に形成された前記遮光パターンを形成する段階と、
前記第1フォトレジストパターンを除去する段階を含み、
前記第1及び第3導電層は透明導電層であり、
前記遮光パターンは前記画素電極の両側部及び前記ストレージ下部電極と重なることを
特徴とする液晶表示装置の製造方法。
- 前記単一層構造のストレージ下部電極は前記ゲートラインの第1導電層から画素領域側へ突き出して形成されたことを特徴とする請求項1記載の液晶表示装置の製造方法。
- 前記ゲートパターンを形成する段階は前記ゲートラインの間毎に独立的に前記データラインと重なるリペアラインを形成する段階を追加に含むことを特徴とする請求項1記載の液晶表示装置の製造方法。
- 前記リペアラインは、単一層構造の前記ストレージ下部電極とともに形成されるか、二重層構造の前記ゲートラインとともに形成されることを特徴とする請求項3に記載の液晶表示装置の製造方法。
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KR1020040037770A KR101086477B1 (ko) | 2004-05-27 | 2004-05-27 | 표시 소자용 박막 트랜지스터 기판 제조 방법 |
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JP (1) | JP4754877B2 (ja) |
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Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1139837C (zh) * | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
US8018390B2 (en) * | 2003-06-16 | 2011-09-13 | Andrew Llc | Cellular antenna and systems and methods therefor |
KR101086478B1 (ko) * | 2004-05-27 | 2011-11-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
KR20060131071A (ko) * | 2005-06-15 | 2006-12-20 | 삼성전자주식회사 | 표시 장치용 배선, 이를 포함하는 박막 트랜지스터 표시판및 그 제조 방법 |
KR101141534B1 (ko) * | 2005-06-29 | 2012-05-04 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
US7541253B1 (en) * | 2005-10-05 | 2009-06-02 | National Semiconductor Corporation | Method of forming an integrated resistor |
US7601566B2 (en) | 2005-10-18 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7615495B2 (en) * | 2005-11-17 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
US7452782B2 (en) * | 2005-11-21 | 2008-11-18 | Hannstar Display Corp. | Image TFT array of a direct X-ray image sensor and method of fabricating the same |
US7554619B2 (en) | 2005-12-05 | 2009-06-30 | Tpo Displays Corp. | Stacked storage capacitor structure for a LTPS TFT-LCD |
KR20070071324A (ko) * | 2005-12-30 | 2007-07-04 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
US20090061941A1 (en) * | 2006-03-17 | 2009-03-05 | Steve Clark | Telecommunications antenna monitoring system |
KR101192626B1 (ko) * | 2006-05-12 | 2012-10-18 | 삼성디스플레이 주식회사 | 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 장치 |
KR101277218B1 (ko) * | 2006-06-29 | 2013-06-24 | 엘지디스플레이 주식회사 | 박막 트랜지스터 제조방법 및 액정표시소자의 제조방법 |
KR100983716B1 (ko) * | 2006-06-30 | 2010-09-24 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR101258129B1 (ko) * | 2006-07-28 | 2013-04-25 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법과 그 리페어 방법 |
KR20080028640A (ko) * | 2006-09-27 | 2008-04-01 | 삼성전자주식회사 | 박막 트랜지스터 제조용 마스크, 이에 의해 제조된 박막트랜지스터 기판 및 이를 이용한 박막 트랜지스터 기판의제조방법 |
KR101346861B1 (ko) * | 2006-11-30 | 2014-01-02 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR101353269B1 (ko) * | 2006-12-11 | 2014-01-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
TWI333279B (en) * | 2007-01-02 | 2010-11-11 | Au Optronics Corp | Method for manufacturing an array substrate |
JP5090745B2 (ja) * | 2007-01-17 | 2012-12-05 | 株式会社ジャパンディスプレイイースト | 表示装置および表示装置の製造方法 |
WO2008136158A1 (ja) * | 2007-04-24 | 2008-11-13 | Sharp Kabushiki Kaisha | 表示装置用基板、表示装置及び配線基板 |
TWI346391B (en) * | 2007-08-20 | 2011-08-01 | Au Optronics Corp | Liquid crystal display device and the manufacturing method thereof |
JP4524699B2 (ja) * | 2007-10-17 | 2010-08-18 | ソニー株式会社 | 表示装置 |
TWI339757B (en) | 2007-10-22 | 2011-04-01 | Au Optronics Corp | Display device and method of manufacturing the same |
JP5137798B2 (ja) * | 2007-12-03 | 2013-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101414043B1 (ko) * | 2007-12-04 | 2014-07-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 |
US9041202B2 (en) * | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
WO2010029859A1 (en) | 2008-09-12 | 2010-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN103545342B (zh) * | 2008-09-19 | 2018-01-26 | 株式会社半导体能源研究所 | 半导体装置 |
KR101889287B1 (ko) | 2008-09-19 | 2018-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR101961632B1 (ko) | 2008-10-03 | 2019-03-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
CN101728398A (zh) * | 2008-10-28 | 2010-06-09 | 奇美电子股份有限公司 | 薄膜晶体管基板、显示面板、显示装置及其制造方法 |
JP5122654B2 (ja) * | 2008-11-19 | 2013-01-16 | シャープ株式会社 | アクティブマトリクス基板、液晶表示パネル、液晶表示装置、アクティブマトリクス基板の製造方法、液晶表示パネルの製造方法、及び、液晶表示パネルの駆動方法 |
TWI405017B (zh) * | 2008-12-18 | 2013-08-11 | Lg Display Co Ltd | 顯示裝置之陣列基板及其製造方法 |
TWI383232B (zh) * | 2009-03-19 | 2013-01-21 | Au Optronics Corp | 薄膜電晶體陣列基板 |
WO2011004755A1 (en) | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011007596A1 (ja) * | 2009-07-15 | 2011-01-20 | シャープ株式会社 | 液晶表示装置 |
TWI626731B (zh) | 2009-08-07 | 2018-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
JP5683179B2 (ja) * | 2009-09-24 | 2015-03-11 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
CN102034751B (zh) * | 2009-09-24 | 2013-09-04 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102034749B (zh) * | 2009-09-25 | 2013-09-04 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法 |
CN102598278B (zh) * | 2009-10-09 | 2015-04-08 | 株式会社半导体能源研究所 | 半导体器件 |
JP5771365B2 (ja) * | 2009-11-23 | 2015-08-26 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 中小型液晶表示装置 |
WO2011114404A1 (ja) * | 2010-03-19 | 2011-09-22 | シャープ株式会社 | アクティブマトリクス基板 |
KR101749265B1 (ko) * | 2010-04-30 | 2017-06-21 | 삼성디스플레이 주식회사 | 어레이 기판 및 그 제조 방법 |
US8592811B2 (en) * | 2010-05-11 | 2013-11-26 | Sharp Kabushiki Kaisha | Active matrix substrate and display panel |
TWI472039B (zh) * | 2010-06-01 | 2015-02-01 | Chunghwa Picture Tubes Ltd | 薄膜電晶體及其製作方法 |
CN102270604B (zh) | 2010-06-03 | 2013-11-20 | 北京京东方光电科技有限公司 | 阵列基板的结构及其制造方法 |
US8536571B2 (en) * | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
KR101808527B1 (ko) * | 2011-03-08 | 2017-12-13 | 엘지디스플레이 주식회사 | 박막트랜지스터의 제조방법 |
CN102650783A (zh) * | 2011-12-29 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种显示装置、tft-lcd像素结构及其制作方法 |
US20130207111A1 (en) | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device |
CN103137815A (zh) * | 2013-02-28 | 2013-06-05 | 合肥彩虹蓝光科技有限公司 | 新型pss基版结构及其制作方法 |
CN103219284B (zh) * | 2013-03-19 | 2015-04-08 | 北京京东方光电科技有限公司 | Tft阵列基板、tft阵列基板的制作方法及显示装置 |
CN103915431B (zh) * | 2013-06-17 | 2017-10-20 | 上海天马微电子有限公司 | 一种tft阵列基板、显示装置及阵列基板制作方法 |
KR102054000B1 (ko) * | 2013-09-11 | 2019-12-10 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판, 액정 표시 장치 및 박막 트랜지스터 표시판의 제조방법 |
US9530808B2 (en) * | 2013-09-12 | 2016-12-27 | Boe Technology Group Co., Ltd. | TFT array substrate, manufacturing method thereof, and display device |
KR102210524B1 (ko) | 2013-11-13 | 2021-02-03 | 삼성디스플레이 주식회사 | 표시패널 |
CN105223748B (zh) * | 2014-06-25 | 2018-07-13 | 群创光电股份有限公司 | 显示面板和应用其显示面板的显示装置 |
TWI553379B (zh) | 2014-06-25 | 2016-10-11 | 群創光電股份有限公司 | 顯示面板和應用其之顯示裝置 |
CN104505392A (zh) * | 2014-12-29 | 2015-04-08 | 合肥鑫晟光电科技有限公司 | 阵列基板及其制作方法、阵列基板的修复方法、显示装置 |
CN104752344A (zh) * | 2015-04-27 | 2015-07-01 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制作方法 |
CN105280552B (zh) * | 2015-09-23 | 2019-03-19 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法、阵列基板和显示装置 |
KR20170040863A (ko) * | 2015-10-05 | 2017-04-14 | 삼성디스플레이 주식회사 | 투광성 도전막 및 이를 포함하는 액정 표시 장치 |
JP6597192B2 (ja) * | 2015-10-30 | 2019-10-30 | セイコーエプソン株式会社 | 電気光学装置、電子機器、及び電気光学装置の駆動方法 |
KR102454383B1 (ko) * | 2015-12-28 | 2022-10-17 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 방식의 액정 표시장치 |
US10263114B2 (en) | 2016-03-04 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
CN105931995B (zh) * | 2016-04-29 | 2018-11-23 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法 |
CN106154666A (zh) * | 2016-08-23 | 2016-11-23 | 京东方科技集团股份有限公司 | 一种阵列基板、其驱动方法、液晶显示面板及显示装置 |
CN109791746B (zh) * | 2016-09-29 | 2021-06-08 | 夏普株式会社 | 有源矩阵基板、显示面板以及具备显示面板的显示装置 |
CN112740309B (zh) * | 2018-09-21 | 2022-09-06 | 夏普株式会社 | 显示装置 |
CN109254431A (zh) * | 2018-11-12 | 2019-01-22 | 成都中电熊猫显示科技有限公司 | 阵列基板和阵列基板的断线修复方法 |
CN109300841B (zh) * | 2018-11-16 | 2019-10-01 | 成都中电熊猫显示科技有限公司 | 阵列基板的制造方法 |
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CN111338142B (zh) * | 2020-04-10 | 2022-09-06 | 成都京东方光电科技有限公司 | 阵列基板及其制作方法、显示装置 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2639980B2 (ja) | 1988-09-19 | 1997-08-13 | 三洋電機株式会社 | 液晶表示装置 |
US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
JP2999858B2 (ja) | 1991-07-09 | 2000-01-17 | 三洋電機株式会社 | 容量素子の製造方法 |
KR940004322B1 (ko) * | 1991-09-05 | 1994-05-19 | 삼성전자 주식회사 | 액정표시장치 및 그 제조방법 |
US5317433A (en) * | 1991-12-02 | 1994-05-31 | Canon Kabushiki Kaisha | Image display device with a transistor on one side of insulating layer and liquid crystal on the other side |
JPH05323375A (ja) | 1992-05-25 | 1993-12-07 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH06208131A (ja) | 1993-01-11 | 1994-07-26 | Hitachi Ltd | 液晶表示装置 |
DE4339721C1 (de) * | 1993-11-22 | 1995-02-02 | Lueder Ernst | Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren |
TW321731B (ja) * | 1994-07-27 | 1997-12-01 | Hitachi Ltd | |
JP3866783B2 (ja) * | 1995-07-25 | 2007-01-10 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
US5737041A (en) * | 1995-07-31 | 1998-04-07 | Image Quest Technologies, Inc. | TFT, method of making and matrix displays incorporating the TFT |
KR0156202B1 (ko) * | 1995-08-22 | 1998-11-16 | 구자홍 | 액정표시장치 및 그 제조방법 |
JPH0974203A (ja) | 1995-09-06 | 1997-03-18 | Matsushita Electric Ind Co Ltd | 薄膜素子アレイおよびその製造方法 |
JPH09113931A (ja) * | 1995-10-16 | 1997-05-02 | Sharp Corp | 液晶表示装置 |
JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP3205501B2 (ja) | 1996-03-12 | 2001-09-04 | シャープ株式会社 | アクティブマトリクス表示装置およびその修正方法 |
KR100213969B1 (ko) * | 1996-03-15 | 1999-08-02 | 구자홍 | 액티브 매트릭스의 제조방법 및 구조 |
JPH10319438A (ja) | 1997-05-23 | 1998-12-04 | Sharp Corp | アクティブマトリクス基板、その製造方法およびその欠陥修正方法 |
JP4217287B2 (ja) | 1997-11-28 | 2009-01-28 | 三菱電機株式会社 | Tftアレイ基板およびこれを用いた液晶表示装置 |
KR100351439B1 (ko) * | 1999-10-04 | 2002-09-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 |
JP2001339072A (ja) | 2000-03-15 | 2001-12-07 | Advanced Display Inc | 液晶表示装置 |
KR20020002089A (ko) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 액정 표시 소자의 제조방법 |
US6867823B2 (en) * | 2000-08-11 | 2005-03-15 | Hannstar Display Corp. | Process and structure for repairing defect of liquid crystal display |
JP4342711B2 (ja) * | 2000-09-20 | 2009-10-14 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
JP2002141512A (ja) | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
KR100750872B1 (ko) | 2001-01-18 | 2007-08-22 | 엘지.필립스 엘시디 주식회사 | 액정표장치용 어레이기판과 그 제조방법 |
KR100379684B1 (ko) * | 2001-04-20 | 2003-04-10 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 액정표시소자 제조방법 |
KR100795344B1 (ko) | 2001-05-29 | 2008-01-17 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 및 그의 제조방법 |
KR100797374B1 (ko) * | 2001-06-05 | 2008-01-22 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
KR100456137B1 (ko) * | 2001-07-07 | 2004-11-08 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 어레이 기판 및 그의 제조방법 |
KR100796795B1 (ko) * | 2001-10-22 | 2008-01-22 | 삼성전자주식회사 | 반도체 소자의 접촉부 및 그 제조 방법과 이를 포함하는표시 장치용 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100980008B1 (ko) * | 2002-01-02 | 2010-09-03 | 삼성전자주식회사 | 배선 구조, 이를 이용하는 박막 트랜지스터 기판 및 그제조 방법 |
KR100480333B1 (ko) | 2002-04-08 | 2005-04-06 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
KR100436181B1 (ko) | 2002-04-16 | 2004-06-12 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제조방법 |
US7569153B2 (en) | 2002-05-23 | 2009-08-04 | Lg Display Co., Ltd. | Fabrication method of liquid crystal display device |
JP3605100B2 (ja) | 2002-07-15 | 2004-12-22 | 松下電器産業株式会社 | 液晶表示装置 |
KR100886241B1 (ko) * | 2002-09-10 | 2009-02-27 | 엘지디스플레이 주식회사 | 액정표시소자의 제조방법 |
KR100968560B1 (ko) * | 2003-01-07 | 2010-07-08 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 박막 트랜지스터 기판의금속배선 형성방법 |
KR101030545B1 (ko) * | 2004-03-30 | 2011-04-21 | 엘지디스플레이 주식회사 | 액정표시소자 |
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JP2005338855A (ja) | 2005-12-08 |
US20080143903A1 (en) | 2008-06-19 |
KR101086477B1 (ko) | 2011-11-25 |
US8045072B2 (en) | 2011-10-25 |
CN1702530A (zh) | 2005-11-30 |
CN100397211C (zh) | 2008-06-25 |
US7351623B2 (en) | 2008-04-01 |
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