CN102034751B - Tft-lcd阵列基板及其制造方法 - Google Patents
Tft-lcd阵列基板及其制造方法 Download PDFInfo
- Publication number
- CN102034751B CN102034751B CN2009100934852A CN200910093485A CN102034751B CN 102034751 B CN102034751 B CN 102034751B CN 2009100934852 A CN2009100934852 A CN 2009100934852A CN 200910093485 A CN200910093485 A CN 200910093485A CN 102034751 B CN102034751 B CN 102034751B
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- China
- Prior art keywords
- photoresist
- electrode
- tft
- fully
- via hole
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Abstract
Description
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100934852A CN102034751B (zh) | 2009-09-24 | 2009-09-24 | Tft-lcd阵列基板及其制造方法 |
KR1020100092524A KR101212554B1 (ko) | 2009-09-24 | 2010-09-20 | Tft-lcd 어레이 기판 및 그 제조 방법 |
US12/886,894 US8441592B2 (en) | 2009-09-24 | 2010-09-21 | TFT-LCD array substrate and manufacturing method thereof |
JP2010212137A JP5741992B2 (ja) | 2009-09-24 | 2010-09-22 | Tft−lcdアレイ基板及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100934852A CN102034751B (zh) | 2009-09-24 | 2009-09-24 | Tft-lcd阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102034751A CN102034751A (zh) | 2011-04-27 |
CN102034751B true CN102034751B (zh) | 2013-09-04 |
Family
ID=43756347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100934852A Expired - Fee Related CN102034751B (zh) | 2009-09-24 | 2009-09-24 | Tft-lcd阵列基板及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8441592B2 (zh) |
JP (1) | JP5741992B2 (zh) |
KR (1) | KR101212554B1 (zh) |
CN (1) | CN102034751B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102034751B (zh) * | 2009-09-24 | 2013-09-04 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102709283B (zh) * | 2011-05-27 | 2015-06-10 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管阵列基板及其制作方法 |
CN103137555B (zh) * | 2011-11-30 | 2016-03-09 | 上海中航光电子有限公司 | 薄膜晶体管液晶显示器件及其制造方法 |
KR20130066247A (ko) | 2011-12-12 | 2013-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN102768990B (zh) * | 2012-07-27 | 2014-06-25 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN103296033B (zh) * | 2013-05-28 | 2016-05-11 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法 |
KR20150069386A (ko) * | 2013-12-13 | 2015-06-23 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
CN103700707B (zh) * | 2013-12-18 | 2018-12-11 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制备方法、显示装置 |
KR102255379B1 (ko) | 2014-08-12 | 2021-05-26 | 삼성디스플레이 주식회사 | 표시 장치 및 이를 제조하는 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6765641B1 (en) * | 1997-04-18 | 2004-07-20 | Sharp Kabushiki Kaisha | Display device |
CN1702530A (zh) * | 2004-05-27 | 2005-11-30 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100255592B1 (ko) * | 1997-03-19 | 2000-05-01 | 구본준 | 액정 표시 장치 구조 및 그 제조 방법 |
JP3447619B2 (ja) * | 1999-06-25 | 2003-09-16 | 株式会社東芝 | アクティブマトリクス基板の製造方法、中間転写基板 |
KR100545021B1 (ko) * | 1999-12-31 | 2006-01-24 | 엘지.필립스 엘시디 주식회사 | 액정표시소자와 그 제조 방법 |
US7079210B2 (en) * | 2001-11-22 | 2006-07-18 | Samsung Electronics Co., Ltd. | Liquid crystal display and thin film transistor array panel |
AU2002354321A1 (en) * | 2001-11-22 | 2003-06-10 | Samsung Electronics Co., Ltd | Liquid crystal display and thin film transistor array panel |
KR100436181B1 (ko) * | 2002-04-16 | 2004-06-12 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제조방법 |
KR100476366B1 (ko) * | 2002-04-17 | 2005-03-16 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100556702B1 (ko) * | 2003-10-14 | 2006-03-07 | 엘지.필립스 엘시디 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
KR100585873B1 (ko) * | 2003-11-03 | 2006-06-07 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 액정표시소자 및 그 제조방법 |
KR101222952B1 (ko) * | 2005-11-18 | 2013-01-17 | 엘지디스플레이 주식회사 | Tft 어레이 기판 및 그 제조방법 |
KR101243395B1 (ko) * | 2006-04-27 | 2013-03-13 | 엘지디스플레이 주식회사 | 유기 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR101228475B1 (ko) * | 2006-06-05 | 2013-01-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
CN1959508A (zh) | 2006-11-10 | 2007-05-09 | 京东方科技集团股份有限公司 | 一种tft lcd阵列基板结构和制造方法 |
CN100461433C (zh) | 2007-01-04 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
CN101526707B (zh) * | 2008-03-07 | 2011-10-12 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板制造方法 |
CN102034751B (zh) * | 2009-09-24 | 2013-09-04 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
-
2009
- 2009-09-24 CN CN2009100934852A patent/CN102034751B/zh not_active Expired - Fee Related
-
2010
- 2010-09-20 KR KR1020100092524A patent/KR101212554B1/ko active IP Right Grant
- 2010-09-21 US US12/886,894 patent/US8441592B2/en active Active
- 2010-09-22 JP JP2010212137A patent/JP5741992B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6765641B1 (en) * | 1997-04-18 | 2004-07-20 | Sharp Kabushiki Kaisha | Display device |
CN1702530A (zh) * | 2004-05-27 | 2005-11-30 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101212554B1 (ko) | 2012-12-14 |
JP5741992B2 (ja) | 2015-07-01 |
KR20110033074A (ko) | 2011-03-30 |
CN102034751A (zh) | 2011-04-27 |
JP2011070194A (ja) | 2011-04-07 |
US8441592B2 (en) | 2013-05-14 |
US20110069247A1 (en) | 2011-03-24 |
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Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150616 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150616 |
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Effective date of registration: 20150616 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee after: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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