JP4718700B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4718700B2
JP4718700B2 JP2001075376A JP2001075376A JP4718700B2 JP 4718700 B2 JP4718700 B2 JP 4718700B2 JP 2001075376 A JP2001075376 A JP 2001075376A JP 2001075376 A JP2001075376 A JP 2001075376A JP 4718700 B2 JP4718700 B2 JP 4718700B2
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Japan
Prior art keywords
silicon film
film
amorphous silicon
semiconductor film
forming
Prior art date
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Expired - Fee Related
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JP2001075376A
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English (en)
Japanese (ja)
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JP2002280301A5 (enExample
JP2002280301A (ja
Inventor
舜平 山崎
久 大谷
亨 三津木
英人 大沼
圭恵 高野
健司 笠原
浩二 大力
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001075376A priority Critical patent/JP4718700B2/ja
Priority to US10/098,153 priority patent/US7122450B2/en
Publication of JP2002280301A publication Critical patent/JP2002280301A/ja
Priority to US11/580,938 priority patent/US7485553B2/en
Publication of JP2002280301A5 publication Critical patent/JP2002280301A5/ja
Application granted granted Critical
Publication of JP4718700B2 publication Critical patent/JP4718700B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001075376A 2001-03-16 2001-03-16 半導体装置の作製方法 Expired - Fee Related JP4718700B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001075376A JP4718700B2 (ja) 2001-03-16 2001-03-16 半導体装置の作製方法
US10/098,153 US7122450B2 (en) 2001-03-16 2002-03-15 Process for manufacturing a semiconductor device
US11/580,938 US7485553B2 (en) 2001-03-16 2006-10-16 Process for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001075376A JP4718700B2 (ja) 2001-03-16 2001-03-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002280301A JP2002280301A (ja) 2002-09-27
JP2002280301A5 JP2002280301A5 (enExample) 2008-02-28
JP4718700B2 true JP4718700B2 (ja) 2011-07-06

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JP2001075376A Expired - Fee Related JP4718700B2 (ja) 2001-03-16 2001-03-16 半導体装置の作製方法

Country Status (2)

Country Link
US (2) US7122450B2 (enExample)
JP (1) JP4718700B2 (enExample)

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JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5088993B2 (ja) 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
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KR101132266B1 (ko) * 2004-03-26 2012-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
US7132372B2 (en) * 2004-07-29 2006-11-07 Freescale Semiconductor, Inc. Method for preparing a semiconductor substrate surface for semiconductor device fabrication
JP4906039B2 (ja) * 2004-08-03 2012-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700317B2 (ja) * 2004-09-30 2011-06-15 株式会社半導体エネルギー研究所 表示装置の作製方法
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JP4525671B2 (ja) * 2006-12-08 2010-08-18 ソニー株式会社 固体撮像装置
JP5436101B2 (ja) * 2008-09-05 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8557688B2 (en) * 2009-12-07 2013-10-15 National Yunlin University Of Science And Technology Method for fabricating P-type polycrystalline silicon-germanium structure
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