JP5106136B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5106136B2 JP5106136B2 JP2008004408A JP2008004408A JP5106136B2 JP 5106136 B2 JP5106136 B2 JP 5106136B2 JP 2008004408 A JP2008004408 A JP 2008004408A JP 2008004408 A JP2008004408 A JP 2008004408A JP 5106136 B2 JP5106136 B2 JP 5106136B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
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- C30—CRYSTAL GROWTH
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Description
例えば、TFTのソース・ドレイン領域にリンを添加して450〜700℃の熱処理を行うことで、チャネル形成領域から当該金属元素を容易に除去することが可能である。
ここで、プラズマCVD法を用い、原料ガスとしてモノシランとアルゴン元素と水素を用いて半導体基板上に形成されたアモルファスシリコン膜の膜中におけるアルゴン濃度のRFパワー密度依存性を調べることとした。
次に、プラズマCVD法を用い、チャンバー内の圧力の条件を振り、アモルファスシリコン膜の膜中におけるアルゴン濃度において、チャンバー内の圧力の依存性を調べた。
ここでは、プラズマCVD法を用い、原料ガスとしてモノシランとアルゴン元素と水素を用いて形成されたアモルファスシリコン膜の膜質について以下に述べる。
以下に本発明を用いた代表的なTFTの作製手順を簡略に図1を用いて示す。
ここではゲッタリングサイトとして本発明の希ガス元素を含み、且つ非晶質構造を有する半導体膜を用いた例を示す。
第1の半導体膜12は、シリコンを主成分とする半導体材料を用いる。代表的には、非晶質シリコン膜又は非晶質シリコンゲルマニウム膜などが適用され、プラズマCVD法や減圧CVD法、或いはスパッタ法で10〜100nmの厚さに形成する。後の結晶化で良質な結晶構造を有する半導体膜を得るためには、非晶質構造を有する第1の半導体膜12の膜中に含まれる酸素、窒素などの不純物濃度を5×1018/cm3(二次イオン質量分析法(SIMS)にて測定した原子濃度)以下に低減させておくと良い。これらの不純物は後の結晶化を妨害する要因となり、また、結晶化後においても捕獲中心や再結合中心の密度を増加させる要因となる。そのために、高純度の材料ガスを用いることはもとより、反応室内の鏡面処理(電界研磨処理)やオイルフリーの真空排気系を備えた超高真空対応のCVD装置を用いることが望ましい。
が好ましい。ここでは原料ガスとして、モノシラン、アルゴン、水素を用いることによって、アルゴンを1×1018/cm3〜1×1022/cm3、好ましくは、1×1020/cm3〜1×1021/cm3の濃度で含み、ゲッタリング効果が得られる第2の半導体膜をプラズマCVD法で成膜することができる。なお、第2の半導体膜は、膜中のフッ素濃度が2×1016/cm3〜8×1016/cm3の濃度にまで低減され、水素濃度も比較的低い値となる。
次いで、半導体にn型を付与する不純物元素(P、As等)、ここではリンを適宜添加して、ソース領域20及びドレイン領域21を形成する。添加した後、不純物元素を活性化するために加熱処理、強光の照射、またはレーザー光の照射を行う。また、活性化と同時にゲート絶縁膜へのプラズマダメージやゲート絶縁膜と半導体層との界面へのプラズマダメージを回復することができる。特に、室温〜300℃の雰囲気中において、表面または裏面からYAGレーザーの第2高調波を照射して不純物元素を活性化させることは非常に有効である。YAGレーザーはメンテナンスが少ないため好ましい活性化手段である。
ここではTFTの活性層として本発明の希ガス元素を含み、且つ非晶質構造を有する半導体膜を用いた例を示す。
また、本発明の希ガス元素を含み、且つ非晶質構造を有する半導体膜は、基板上に各素子を形成した後、基板とTFT等の素子とを分離する際、エッチング処理、或いはレーザー光の照射によって層内または界面において剥離現象が生じる層(剥離層)として用いることもできる。この剥離層は、基板上に接して設け、剥離層上に絶縁膜およびTFTを形成する。
の厚さに積層形成し、さらに大気解放せずにプラズマCVD法で成膜温度300℃、成膜ガスSiH4で非晶質構造を有する半導体膜(ここではアモルファスシリコン膜)を54nmの厚さ(好ましくは25〜80nm)で形成する。
この加熱処理は、電気炉の熱処理または強光の照射を用いればよい。電気炉の熱処理で行う場合は、500℃〜650℃で4〜24時間で行えばよい。ここでは脱水素化のための熱処理(500℃、1時間)の後、結晶化のための熱処理(550℃、4時間)を行って結晶構造を有するシリコン膜を得る。なお、ここでは炉を用いた熱処理を用いて結晶化を行ったが、ランプアニール装置で結晶化を行ってもよい。なお、ここではシリコンの結晶化を助長する金属元素としてニッケルを用いた結晶化技術を用いたが、他の公知の結晶化技術、例えば固相成長法やレーザー結晶化法を用いてもよい。
により得られる。
(図6(C))ここでは、エッチング用ガスにSF6とCl2とO2とを用い、それぞれのガス流量比を24/12/24(sccm)とし、1.3Paの圧力でコイル型の電極に700WのRF(13.56MHz)電力を投入してプラズマを生成してエッチングを25秒行った。基板側(試料ステージ)にも10WのRF(13.56MHz)電力を投入し、実質的に負の自己バイアス電圧を印加する。第2のエッチング処理でのWに対するエッチング速度は227.3nm/min、TaNに対するエッチング速度は32.1nm/minであり、TaNに対するWの選択比は7.1であり、絶縁膜116であるSiONに対するエッチング速度は33.7nm/minであり、SiONに対するWの選択比は6.83である。このようにエッチングガス用ガスにSF6を用いた場合、絶縁膜116との選択比が高いので膜減りを抑えることができる。本実施例では絶縁膜116において約8nmしか膜減りが起きない。
ただし、本実施例では、第2の導電層としてアルミニウムを主成分とする材料を用いているので、水素化する工程において第2の導電層が耐え得る熱処理条件とすることが重要である。水素化の他の手段として、プラズマ水素化(プラズマにより励起された水素を用いる)を行っても良い。
具体的にはGOLD構造のTFTにおいてゲート電極のテーパー部となる部分サイズを小さくしても十分な信頼性を得ることができる。
をA−A’で切断した断面図である。絶縁表面を有する基板900(例えば、ガラス基板、結晶化ガラス基板、もしくはプラスチック基板等)に、画素部902、ソース側駆動回路901、及びゲート側駆動回路903を形成する。これらの画素部や駆動回路は、上記実施例に従えば得ることができる。
窒化シリコン膜の膜中に含まれるフッ素濃度は、1×1019/cm3以上、好ましくは窒化シリコン膜中でのフッ素の組成比を1〜5%とすればよい。窒化シリコン膜中のフッ素がアルカリ金属イオンやアルカリ土金属イオン等と結合し、膜中に吸着される。また、他の例としてアルカリ金属イオンやアルカリ土金属イオン等を吸着するアンチモン(Sb)化合物、スズ(Sn)化合物、またはインジウム(In)化合物からなる微粒子を含む有機樹脂膜、例えば、五酸化アンチモン微粒子(Sb2O5・nH2O)を含む有機樹脂膜も挙げられる。なお、この有機樹脂膜は、平均粒径10〜20nmの微粒子が含まれており、光透過性も非常に高い。この五酸化アンチモン微粒子で代表されるアンチモン化合物は、アルカリ金属イオン等の不純物イオンやアルカリ土金属イオンを吸着しやすい。
Claims (3)
- 基板上に不純物を有する半導体膜を形成する半導体装置の作製方法において、
成膜室にモノシランと希ガスと水素とを原料ガスとして導入し、プラズマを発生させて作製した希ガス元素を1×1020/cm3〜1×1021/cm3で含む半導体膜を前記不純物を有する半導体膜のゲッタリングサイトとして用いることを特徴とする半導体装置の作製方法。 - 請求項1において、前記希ガス元素を1×1020/cm3〜1×1021/cm3で含む半導体膜の成膜条件は投入RFパワー密度が0.333W/cm2以上であることを特徴とする半導体装置の作製方法。
- 請求項1または請求項2において、前記希ガス元素を1×1020/cm3〜1×1021/cm3で含む半導体膜のフッ素濃度が、2×1016/cm3〜8×1016/cm3であり、窒素濃度が1×1016/cm3〜1×1017/cm3であり、酸素濃度が1×1018/cm3〜3×1018/cm3であり、炭素濃度が1×1016/cm3〜5×1017cm3であることを特徴とする半導体装置の作製方法。
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US6858480B2 (en) * | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7115453B2 (en) * | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
TW541584B (en) | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
US7199027B2 (en) * | 2001-07-10 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen |
JP5072157B2 (ja) * | 2001-09-27 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2003303770A (ja) * | 2002-04-11 | 2003-10-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
AU2003235305A1 (en) * | 2002-04-19 | 2003-11-03 | Tokyo Electron Limited | Method of treating substrate and process for producing semiconductor device |
US7091110B2 (en) * | 2002-06-12 | 2006-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device by gettering using a anti-diffusion layer |
JP4373063B2 (ja) * | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
US7332431B2 (en) * | 2002-10-17 | 2008-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7374976B2 (en) * | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
US7018779B2 (en) * | 2003-01-07 | 2006-03-28 | International Business Machines Corporation | Apparatus and method to improve resist line roughness in semiconductor wafer processing |
US7344901B2 (en) * | 2003-04-16 | 2008-03-18 | Corning Incorporated | Hermetically sealed package and method of fabricating of a hermetically sealed package |
US6998776B2 (en) | 2003-04-16 | 2006-02-14 | Corning Incorporated | Glass package that is hermetically sealed with a frit and method of fabrication |
JP4717385B2 (ja) * | 2003-08-27 | 2011-07-06 | 三菱電機株式会社 | 半導体装置 |
US7601994B2 (en) * | 2003-11-14 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US7507617B2 (en) * | 2003-12-25 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7276402B2 (en) * | 2003-12-25 | 2007-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20050238816A1 (en) * | 2004-04-23 | 2005-10-27 | Li Hou | Method and apparatus of depositing low temperature inorganic films on plastic substrates |
KR100615218B1 (ko) | 2004-04-29 | 2006-08-25 | 삼성에스디아이 주식회사 | 다결정 실리콘막을 채용한 박막 트랜지스터의 제조 방법,이에 따라 제조된 박막 트랜지스터 및 상기 박막트랜지스터를 구비한 평판 표시장치 |
US20050286102A1 (en) * | 2004-06-14 | 2005-12-29 | Thomas Lieske | Information processing using lasing material |
JP4801337B2 (ja) * | 2004-09-21 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2006112383A1 (ja) * | 2005-04-14 | 2006-10-26 | Matsushita Electric Industrial Co., Ltd. | 電子回路装置およびその製造方法 |
US8088676B2 (en) * | 2005-04-28 | 2012-01-03 | The Hong Kong University Of Science And Technology | Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom |
US8222646B2 (en) * | 2005-07-08 | 2012-07-17 | The Hong Kong University Of Science And Technology | Thin-film transistors with metal source and drain and methods of fabrication |
US7572741B2 (en) | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
DE102006015792A1 (de) * | 2006-04-05 | 2007-10-18 | Isra Surface Vision Gmbh | Verfahren und System zur Formmessung einer reflektierenden Oberfläche |
US20080124558A1 (en) * | 2006-08-18 | 2008-05-29 | Heather Debra Boek | Boro-silicate glass frits for hermetic sealing of light emitting device displays |
CN102097325A (zh) * | 2006-09-08 | 2011-06-15 | 夏普株式会社 | 半导体装置及其制造方法、显示装置 |
KR100875432B1 (ko) * | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
WO2008156040A1 (en) * | 2007-06-20 | 2008-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7795111B2 (en) * | 2007-06-27 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
KR100889626B1 (ko) * | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
KR100889627B1 (ko) * | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
JP5205012B2 (ja) * | 2007-08-29 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 表示装置及び当該表示装置を具備する電子機器 |
JP4494446B2 (ja) * | 2007-09-12 | 2010-06-30 | 株式会社 日立ディスプレイズ | 表示装置 |
KR100982310B1 (ko) * | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR100989136B1 (ko) * | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR101002666B1 (ko) * | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
JP5336956B2 (ja) * | 2008-07-31 | 2013-11-06 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
US20100095705A1 (en) | 2008-10-20 | 2010-04-22 | Burkhalter Robert S | Method for forming a dry glass-based frit |
WO2012127769A1 (ja) * | 2011-03-22 | 2012-09-27 | パナソニック株式会社 | 半導体薄膜の形成方法、半導体装置、半導体装置の製造方法、基板及び薄膜基板 |
US20120319157A1 (en) * | 2011-06-14 | 2012-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP5998397B2 (ja) * | 2011-10-25 | 2016-09-28 | 株式会社Joled | 薄膜半導体装置及びその製造方法 |
KR101901361B1 (ko) | 2011-12-02 | 2018-09-27 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
KR101993331B1 (ko) * | 2013-01-03 | 2019-06-27 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
KR102485374B1 (ko) * | 2015-12-31 | 2023-01-04 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
CN105552035B (zh) * | 2016-01-08 | 2019-01-11 | 武汉华星光电技术有限公司 | 低温多晶硅tft阵列基板的制作方法及其结构 |
RU2661320C1 (ru) * | 2017-04-26 | 2018-07-13 | Закрытое акционерное общество Научно-инженерный центр "ИНКОМСИСТЕМ" | Способ гидрофобизации субстрата |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2551244B1 (fr) * | 1983-08-26 | 1985-10-11 | Thomson Csf | Procede de fabrication d'un substrat pour dispositif a commande electrique et ecran de visualisation elabore a partir d'un tel substrat |
US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
JPH081895B2 (ja) | 1985-06-07 | 1996-01-10 | 松下電器産業株式会社 | 非晶質シリコン膜の形成方法 |
US4646424A (en) * | 1985-08-02 | 1987-03-03 | General Electric Company | Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors |
JPS62219970A (ja) * | 1986-03-22 | 1987-09-28 | Nippon Denso Co Ltd | 薄膜半導体素子の製造方法 |
JP2566137B2 (ja) * | 1986-12-25 | 1996-12-25 | ティーディーケイ株式会社 | 薄膜の製造方法 |
US5248630A (en) | 1987-07-27 | 1993-09-28 | Nippon Telegraph And Telephone Corporation | Thin film silicon semiconductor device and process for producing thereof |
US4908330A (en) * | 1988-02-01 | 1990-03-13 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process |
JPH02148715A (ja) | 1988-11-29 | 1990-06-07 | Canon Inc | 半導体デバイスの連続形成装置 |
JPH03289129A (ja) * | 1990-04-05 | 1991-12-19 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
TW237562B (ja) * | 1990-11-09 | 1995-01-01 | Semiconductor Energy Res Co Ltd | |
JPH05109737A (ja) | 1991-10-18 | 1993-04-30 | Casio Comput Co Ltd | 薄膜トランジスタの製造方法 |
JPH0613329A (ja) * | 1992-06-25 | 1994-01-21 | Canon Inc | 半導体装置及び半導体製造装置及び製造方法 |
JPH06140631A (ja) | 1992-10-28 | 1994-05-20 | Ryoden Semiconductor Syst Eng Kk | 電界効果型薄膜トランジスタおよびその製造方法 |
TW264575B (ja) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JP3431041B2 (ja) | 1993-11-12 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH07147245A (ja) * | 1993-11-24 | 1995-06-06 | Asahi Glass Co Ltd | 結晶質シリコン薄膜の形成方法 |
JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5789284A (en) | 1994-09-29 | 1998-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
JP3454951B2 (ja) * | 1994-12-12 | 2003-10-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3138169B2 (ja) | 1995-03-13 | 2001-02-26 | シャープ株式会社 | 半導体装置の製造方法 |
JPH08335703A (ja) * | 1995-06-06 | 1996-12-17 | Furontetsuku:Kk | 薄膜トランジスタ及びその製造方法 |
JP3596188B2 (ja) * | 1995-09-22 | 2004-12-02 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JPH09134882A (ja) | 1995-11-10 | 1997-05-20 | Ulvac Japan Ltd | 低水素アモルファスシリコン膜の形成方法 |
JP3729955B2 (ja) * | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6331457B1 (en) | 1997-01-24 | 2001-12-18 | Semiconductor Energy Laboratory., Ltd. Co. | Method for manufacturing a semiconductor thin film |
KR100440083B1 (ko) | 1996-01-23 | 2004-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체박막제작방법 |
JP3910229B2 (ja) | 1996-01-26 | 2007-04-25 | 株式会社半導体エネルギー研究所 | 半導体薄膜の作製方法 |
JP3830623B2 (ja) | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
JP3939399B2 (ja) * | 1997-07-22 | 2007-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2000058294A (ja) * | 1998-08-07 | 2000-02-25 | Furontekku:Kk | プラズマ処理装置 |
JP2000091242A (ja) | 1998-09-17 | 2000-03-31 | Ulvac Japan Ltd | アモルファスシリコン薄膜製造方法 |
JP3945043B2 (ja) * | 1998-10-12 | 2007-07-18 | ソニー株式会社 | 金属窒化物膜の形成方法および電子装置の製造方法 |
JP2001085701A (ja) * | 1999-04-06 | 2001-03-30 | Matsushita Electric Ind Co Ltd | 多層構造を有する素子、その素子の製造装置、及びその素子の製造方法 |
JP3804349B2 (ja) * | 1999-08-06 | 2006-08-02 | セイコーエプソン株式会社 | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置 |
US6309966B1 (en) | 1999-09-03 | 2001-10-30 | Motorola, Inc. | Apparatus and method of a low pressure, two-step nucleation tungsten deposition |
US6453913B2 (en) | 2000-04-27 | 2002-09-24 | Canon Kabushiki Kaisha | Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method |
US6429097B1 (en) | 2000-05-22 | 2002-08-06 | Sharp Laboratories Of America, Inc. | Method to sputter silicon films |
TWI221645B (en) | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
US7115453B2 (en) | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP2002231627A (ja) | 2001-01-30 | 2002-08-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
US7141822B2 (en) | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP4993810B2 (ja) | 2001-02-16 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4718700B2 (ja) | 2001-03-16 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6812081B2 (en) | 2001-03-26 | 2004-11-02 | Semiconductor Energy Laboratory Co.,.Ltd. | Method of manufacturing semiconductor device |
US6743700B2 (en) * | 2001-06-01 | 2004-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device and method of their production |
TW541584B (en) | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
TW544938B (en) | 2001-06-01 | 2003-08-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JP4216003B2 (ja) * | 2001-06-01 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7199027B2 (en) | 2001-07-10 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen |
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JP2011211214A (ja) * | 2001-06-01 | 2011-10-20 | Semiconductor Energy Lab Co Ltd | 半導体膜の作製方法 |
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KR20020092255A (ko) | 2002-12-11 |
CN1389905A (zh) | 2003-01-08 |
JP5393726B2 (ja) | 2014-01-22 |
US7384828B2 (en) | 2008-06-10 |
KR100881992B1 (ko) | 2009-02-05 |
US20050020037A1 (en) | 2005-01-27 |
US6743700B2 (en) | 2004-06-01 |
US20020182828A1 (en) | 2002-12-05 |
JP2011211214A (ja) | 2011-10-20 |
TW569287B (en) | 2004-01-01 |
CN1293607C (zh) | 2007-01-03 |
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