JP4705325B2 - 表面処理後にタングステンを堆積して膜特性を改善するための方法 - Google Patents
表面処理後にタングステンを堆積して膜特性を改善するための方法 Download PDFInfo
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Description
[0001]本出願は、2001年7月16日出願の米国仮特許出願第60/305,765号の恩典を請求する。その開示内容は本明細書に援用されている。
発明の背景
発明の分野
[0002]発明の実施形態は、半導体基板の処理に関する。特に、本発明の実施形態は、半導体基板上に耐火金属層を堆積する方法の改良に関する。
関連技術の説明
[0003]半導体処理産業は、表面積の大きい基板上に堆積した層の一様性を高めつつ生産収量を上げる努力を続けている。新しい材料と組み合わせたこれらの同様の要因によっても基板の単位面積当たりの回路の密度が高くなる。回路密度が高くなるにつれて、層の厚さに関する一様性やプロセス制御を高めることが求められるようになる。その結果、層の特性に対する制御を維持しつつコスト効率の良い方法で基板上に層を堆積するために様々な技術が開発されてきた。化学気相堆積(CVD)は、基板上に層を堆積させるために用いられる最も一般的な堆積処理法の一つである。CVDは、一様な厚さの所望の層を得るために処理チャンバ内に導入される基板温度と前駆物質の正確な制御を必要とする流量依存性堆積法である。これらの要求は、基板サイズが大きくなるにつれて(例えば200mm径基板から300mmの基板まで)更に重要になり、十分な一様性を維持するためにチャンバ設計とガスフロー技術において更に複雑な要求が生じる。
発明の概要
[0009]基板上に耐火金属層を形成する方法及びシステムには、タングステン層を形成するために、PH3又はB2H6のような還元剤の導入、続いてWF6のようなタングステン含有化合物の導入が含まれる。還元剤はタングステン層のステップカバレージと抵抗率を改善しつつタングステン層のフッ素含有量を減少させると考えられる。タングステン膜の改善された特性は、還元剤とタングステン含有化合物間の化学親和性によると考えられる。化学親和性によって、タングステン層の核形成段階での吸着された化学種の表面移動度が良好になるとともにWF6の還元が良好になる。
好適実施形態の詳細な説明
[0029]図1を参照すると、典型的なウエハ処理システムは、壁18にとり囲まれた共通の作業領域16に配置された1以上の処理チャンバ12と14を含んでいる。処理チャンバ12と14は、24と26として示される1以上のモニタに接続されているコントローラ22とデータ通信している。モニタは、典型的には処理チャンバ12及び14と関連付けられたプロセスに関する共通の情報を表示する。モニタ26のうちの一つは壁18に掛けられ、残りのモニタ24は作業領域16に配置されている。処理チャンバ12と14の動作制御は、コントローラ22と連通するために、モニタ24と26のうちの一つと関連付けられたライトペンの使用によって達成させることができる。例えば、ライトペン28はモニタ24と関連付けられ、モニタ24を介してコントローラ22との連通を容易にする。ライトペン39は、モニタ26を介してコントローラ22との連通を容易にする。
(1)B2H6(g)+WF6(g)→ W(s)+2BF3(g)
(2)PH3(g)+WF6(g)→ W(s)+PF3(g)
他の副生成物にはH2、HF、F2が含まれるがこれらに限定されない。分解反応のような他の反応も起こりうる。他の実施形態においては、SiH4のような他の還元剤を用いることができる。同様に、他の実施形態においては、W(CO)6のようなタングステン含有ガスを用いることができる。
Claims (39)
- 基板上にタングステン含有材料を形成する方法において:
処理チャンバ内に、バリア層を含む基板を配置するステップと;
前記バリア層を第1還元プロセスガスに晒し、前記バリア層上に第1還元ガスの単一層を形成するステップと;
ALD処理中に2サイクル以上、前記第1還元ガスの単一層を連続的にタングステン前駆物質及び還元剤に晒し、核形成層を前記基板上に形成するステップと;
前記核形成層を第2還元プロセスガスに晒し、前記核形成層上に第2還元ガスの単一層を形成するステップと;
前記核形成層上にバルク層を堆積するステップであって、前記第1還元ガスの単一層は、前記第1還元ガスの単一層を晒す間に消費され、前記第2還元ガスの単一層は、前記バルク層を堆積する間に消費される、前記ステップと;
を備える、前記方法。 - 前記バリア層は、ALD処理、CVD処理、PVD処理またはそれらの誘導体から成る群から選択された気相堆積処理により堆積される、請求項1記載の方法。
- 前記バリア層は、チタン又は窒化チタンを備える、請求項2記載の方法。
- 前記気相堆積処理は、
TDMAT、TDEAT、チタン四塩化物、それらの誘導体から成る群から選択されるチタン前駆物質と、アンモニア、水素、ジボラン、シラン、それらの誘導体、それらの組合せから成る群から選択される還元剤と、
を備える、請求項3記載の方法。 - 前記第1還元プロセスガスと前記第2還元プロセスガスは、各々が、ジボラン、フォスフィン、シラン、それらの誘導体、それらの組合せから成る群から別個に選択される、請求項1記載の方法。
- 前記第1還元プロセスガスと前記第2還元プロセスガスは、同一還元プロセスガスである、請求項5記載の方法。
- 前記第1還元プロセスガスと前記第2還元プロセスガスは、異なる還元プロセスガスである、請求項5記載の方法。
- 前記還元剤は、フォスフィン、ジボラン、シラン、水素、それらの誘導体、それらの組合せから成る群から選択される、請求項1記載の方法。
- 前記タングステン前駆物質は、六フッ化タングステンであり、前記還元剤は、シランまたはジボランである、請求項8記載の方法。
- 前記核形成層は、100オングストローム以下の厚みを有する、請求項9記載の方法。
- 前記バルク層は、タングステンを含み、ALD処理、CVD処理、PVD処理またはこれらの誘導体から成る群より選択された気相堆積処理により堆積される、請求項1記載の方法。
- 前記気相堆積処理は、前記核形成層を六フッ化タングステン及びシランに晒すか、六フッ化タングステン及び水素に晒す工程を備える、請求項11記載の方法。
- 前記バルク層は、銅を備える、請求項1記載の方法。
- 水素ガスが、タングステン前駆物質と共に流される、請求項11記載の方法。
- 前記タングステン含有材料は、1×1017原子/cm3未満のフッ素濃度を持って形成される、請求項14記載の方法。
- 基板上にタングステン含有材料を形成する方法において:
処理チャンバ内で6以上のアスペクト比を持つアパーチャを少なくとも一つ含む基板を配置するステップと;
少なくとも1つのアパーチャを含む前記基板を第1還元プロセスガスに晒し、前記少なくとも1つのアパーチャ内で第1還元プロセスガスの単一層を形成するステップと;
ALD処理中に2サイクル以上、前記第1還元プロセスガスの単一層を連続的にタングステン前駆物質及び還元剤に晒し、核形成層を形成する、ステップと;
前記核形成層上にタングステン含有バルク層を形成し、CVD処理中に前記少なくとも一つのアパーチャを充填する、ステップと;
を備える、前記方法。 - 前記少なくとも一つのアパーチャは、内部に配置されたバリア層を備える、請求項16記載の方法。
- 前記バリア層は、チタンまたは窒化チタンを備える、請求項17記載の方法。
- 前記バリア層は、前記第1還元プロセスガスに晒され、上部に前記核形成層を形成する前に前記第1還元プロセスガスの単一層を形成する、請求項17記載の方法。
- 前記還元剤は、フォスフィン、ジボラン、シラン、水素、それらの誘導体、それらの組合せから成る群から選択される、請求項19記載の方法。
- 前記タングステン前駆物質は、六フッ化タングステンであり、前記還元剤は、シランまたはジボランである、請求項20記載の方法。
- 前記核形成層は、第2還元プロセスガスに晒され、上部に前記タングステン含有バルク層を堆積する前に第2還元プロセスガスの単一層を形成する、請求項16記載の方法。
- 前記第2還元プロセスガスは、ジボラン、フォスフィン、シラン、それらの誘導体、それらの組合せから成る群から選択される、請求項22記載の方法。
- 前記第2還元プロセスガスは、ジボラン又はフォスフィンである、請求項22記載の方法。
- 前記核形成層は、第2還元プロセスガスに晒され、上部に前記タングステン含有バルク層を堆積する前に第2還元プロセスガスの単一層を形成する、請求項19記載の方法。
- 前記第1還元プロセスガスと前記第2還元プロセスガスは、同一還元プロセスガスである、請求項22記載の方法。
- 前記第1還元プロセスガスと前記第2還元プロセスガスは、異なる還元プロセスガスである、請求項22記載の方法。
- 前記タングステン含有バルク層は、前記核形成層を六フッ化タングステン及びシランに晒すか六フッ化タングステン及び水素に晒す工程を備える気相堆積処理により堆積される、請求項19記載の方法。
- 基板上にタングステン含有材料を形成する方法において:
基板を第1還元プロセスガスに晒すステップであって、上部に第1還元ガスの単一層を形成する前記ステップと;
ALD処理中に2サイクル以上、前記第1還元ガスの単一層を連続的にタングステン前駆物質及び還元剤に晒し、上部に核形成層を形成する前記ステップであって、前記第1還元ガスの単一層は前記ALD処理中に消費され、上部に核形成層が形成される前記ステップと;
を備える、前記方法。 - 前記第1還元ガスの単一層は、前記基板上に含まれたバリア層上に形成される、請求項29記載の方法。
- 前記バリア層は、チタン又は窒化チタンを備える、請求項30記載の方法。
- 前記第1還元プロセスガスは、ジボラン、フォスフィン、シラン、それらの誘導体、それらの組合せから成る群から選択される、請求項29記載の方法。
- 前記バルク層は、前記核形成層上に堆積される、請求項29記載の方法。
- 前記バルク層は、タングステンを備え、気相堆積処理により堆積される、請求項33記載の方法。
- 第2還元プロセスガスは、前記バルク層を堆積する前に前記核形成層に晒される、請求項34記載の方法。
- 基板上に金属含有材料を形成する方法において:
処理チャンバ内に、バリア層を含む基板を配置するステップと;
第1還元プロセスガスに前記バリア層を晒し、第1還元ガスの単一層を形成するステップと;
ALD処理中に2サイクル以上、金属前駆物質と、フォスフィン、ジボラン、シラン、水素、それらの誘導体、それらの組合せから成る群から選択される化合物とに前記第1還元ガスの単一層を連続的に晒し、核形成層を形成する、ステップと;
第2還元プロセスガスに前記核形成層を晒し、第2還元ガスの単一層を形成する、ステップと;
前記核形成層上にバルク層を堆積するステップであって、前記第1還元ガスの単一層は、前記第1還元ガスの単一層を晒す間に消費され、前記第2還元ガスの単一層は、前記バルク層を堆積する間に消費される、前記ステップと;
を備える、方法。 - 前記金属前駆物質は、タングステン前駆物質である、請求項36記載の方法。
- 前記第1還元プロセスガス及び第2還元プロセスガスは、各々が、ジボラン、フォスフィン、シラン、それらの誘導体、それらの組合せから成る群から別個に選択される、請求項37記載の方法。
- 基板上に金属含有材料を形成する方法において:
処理チャンバ内に6以上のアスペクト比を有する少なくとも一つのアパーチャを含む基板を配置するステップと;
第一還元プロセスガスに前記少なくとも一つのアパーチャを晒し、第一還元ガスの単一層を形成する、ステップと;
ALD処理中に2サイクル以上、前記第一還元ガスの単一層を金属前駆物質と還元剤に連続的に晒し、前記少なくとも一つのアパーチャ内で核形成層を形成する、ステップと;
前記少なくとも一つのアパーチャを導電材料で充填するステップと;
を備える、前記方法。
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JP2001525889A (ja) * | 1997-05-16 | 2001-12-11 | アプライド マテリアルズ インコーポレイテッド | B▲下2▼h▲下6▼を用いた低抵抗率タングステン |
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US20080014724A1 (en) | 2008-01-17 |
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US7749815B2 (en) | 2010-07-06 |
US20050208763A1 (en) | 2005-09-22 |
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