JP4452028B2 - ペデスタル、半導体プロセスのためのシステム及びその方法 - Google Patents
ペデスタル、半導体プロセスのためのシステム及びその方法 Download PDFInfo
- Publication number
- JP4452028B2 JP4452028B2 JP2003071685A JP2003071685A JP4452028B2 JP 4452028 B2 JP4452028 B2 JP 4452028B2 JP 2003071685 A JP2003071685 A JP 2003071685A JP 2003071685 A JP2003071685 A JP 2003071685A JP 4452028 B2 JP4452028 B2 JP 4452028B2
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- pedestal
- wafer boat
- support surface
- heat
- support
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims description 151
- 238000000034 method Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 230000008569 process Effects 0.000 title claims description 11
- 235000012431 wafers Nutrition 0.000 claims description 94
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 239000010453 quartz Substances 0.000 claims description 31
- 239000011810 insulating material Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 239000011819 refractory material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000003779 heat-resistant material Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 description 22
- 239000012212 insulator Substances 0.000 description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Furnace Charging Or Discharging (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36512902P | 2002-03-15 | 2002-03-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004119957A JP2004119957A (ja) | 2004-04-15 |
| JP2004119957A5 JP2004119957A5 (enExample) | 2006-05-11 |
| JP4452028B2 true JP4452028B2 (ja) | 2010-04-21 |
Family
ID=27766268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003071685A Expired - Lifetime JP4452028B2 (ja) | 2002-03-15 | 2003-03-17 | ペデスタル、半導体プロセスのためのシステム及びその方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6902395B2 (enExample) |
| EP (1) | EP1345255B1 (enExample) |
| JP (1) | JP4452028B2 (enExample) |
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| USD588079S1 (en) * | 2006-06-16 | 2009-03-10 | Tokyo Electron Limited | Heat dissipation deterrence link for semiconductor manufacture |
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| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| USD1099184S1 (en) | 2021-11-29 | 2025-10-21 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
| JP7514876B2 (ja) * | 2022-03-25 | 2024-07-11 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び基板支持具 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3906075A1 (de) * | 1989-02-27 | 1990-08-30 | Soehlbrand Heinrich Dr Dipl Ch | Verfahren zur thermischen behandlung von halbleitermaterialien und vorrichtung zur durchfuehrung desselben |
| US5127365A (en) * | 1990-02-27 | 1992-07-07 | Kabushiki Kaisha Toshiba | Vertical heat-treatment apparatus for semiconductor parts |
| US5308955A (en) * | 1991-07-11 | 1994-05-03 | Tokyo Electron Sagami Kabushiki Kaisha | Vertical heat treatment apparatus with vented heat insulation cover means |
| JP3230836B2 (ja) * | 1992-04-09 | 2001-11-19 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP2897963B2 (ja) * | 1992-05-15 | 1999-05-31 | 信越石英株式会社 | 縦型熱処理装置及び保温材 |
| JP3164248B2 (ja) * | 1992-06-11 | 2001-05-08 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5252062A (en) * | 1992-10-15 | 1993-10-12 | International Business Machines Corporation | Thermal processing furnace |
| US5458688A (en) * | 1993-03-09 | 1995-10-17 | Tokyo Electron Kabushiki Kaisha | Heat treatment boat |
| US5662470A (en) * | 1995-03-31 | 1997-09-02 | Asm International N.V. | Vertical furnace |
| US5755570A (en) * | 1995-05-26 | 1998-05-26 | International Business Machines Corporation | Apparatus for in situ environment sensitive sealing and/or product controlling |
| US5846073A (en) * | 1997-03-07 | 1998-12-08 | Semitool, Inc. | Semiconductor furnace processing vessel base |
| US6191388B1 (en) * | 1998-11-18 | 2001-02-20 | Semitool, Inc. | Thermal processor and components thereof |
| JP3598032B2 (ja) | 1999-11-30 | 2004-12-08 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法並びに保温ユニット |
| US6563686B2 (en) * | 2001-03-19 | 2003-05-13 | Applied Materials, Inc. | Pedestal assembly with enhanced thermal conductivity |
-
2003
- 2003-03-13 US US10/390,505 patent/US6902395B2/en not_active Expired - Lifetime
- 2003-03-14 EP EP03251586.8A patent/EP1345255B1/en not_active Expired - Lifetime
- 2003-03-17 JP JP2003071685A patent/JP4452028B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20030175649A1 (en) | 2003-09-18 |
| EP1345255A2 (en) | 2003-09-17 |
| US6902395B2 (en) | 2005-06-07 |
| EP1345255A3 (en) | 2005-09-07 |
| EP1345255B1 (en) | 2014-04-23 |
| JP2004119957A (ja) | 2004-04-15 |
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