JP4286465B2 - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

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Publication number
JP4286465B2
JP4286465B2 JP2001033707A JP2001033707A JP4286465B2 JP 4286465 B2 JP4286465 B2 JP 4286465B2 JP 2001033707 A JP2001033707 A JP 2001033707A JP 2001033707 A JP2001033707 A JP 2001033707A JP 4286465 B2 JP4286465 B2 JP 4286465B2
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Japan
Prior art keywords
lead frame
metal block
resin
semiconductor device
insulating layer
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Expired - Lifetime
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JP2001033707A
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English (en)
Japanese (ja)
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JP2002237562A (ja
JP2002237562A5 (enExample
Inventor
利彰 篠原
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001033707A priority Critical patent/JP4286465B2/ja
Priority to US09/895,319 priority patent/US6979909B2/en
Priority to KR1020010058940A priority patent/KR20020066362A/ko
Priority to DE2001149093 priority patent/DE10149093B4/de
Publication of JP2002237562A publication Critical patent/JP2002237562A/ja
Priority to KR1020040059215A priority patent/KR20040080394A/ko
Priority to US11/239,095 priority patent/US7045907B2/en
Publication of JP2002237562A5 publication Critical patent/JP2002237562A5/ja
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Publication of JP4286465B2 publication Critical patent/JP4286465B2/ja
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2001033707A 2001-02-09 2001-02-09 半導体装置とその製造方法 Expired - Lifetime JP4286465B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001033707A JP4286465B2 (ja) 2001-02-09 2001-02-09 半導体装置とその製造方法
US09/895,319 US6979909B2 (en) 2001-02-09 2001-07-02 Semiconductor device and method of manufacturing same
KR1020010058940A KR20020066362A (ko) 2001-02-09 2001-09-24 반도체 장치 및 그 제조방법
DE2001149093 DE10149093B4 (de) 2001-02-09 2001-10-05 Halbleiterbauelement mit Harzgehäuse
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US20060022331A1 (en) 2006-02-02
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