DE10149093B4 - Halbleiterbauelement mit Harzgehäuse - Google Patents

Halbleiterbauelement mit Harzgehäuse Download PDF

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Publication number
DE10149093B4
DE10149093B4 DE2001149093 DE10149093A DE10149093B4 DE 10149093 B4 DE10149093 B4 DE 10149093B4 DE 2001149093 DE2001149093 DE 2001149093 DE 10149093 A DE10149093 A DE 10149093A DE 10149093 B4 DE10149093 B4 DE 10149093B4
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DE
Germany
Prior art keywords
metal block
semiconductor device
insulating layer
resin
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2001149093
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German (de)
English (en)
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DE10149093A1 (de
Inventor
Toshiaki Shinohara
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE10149093A1 publication Critical patent/DE10149093A1/de
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Publication of DE10149093B4 publication Critical patent/DE10149093B4/de
Anticipated expiration legal-status Critical
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    • HELECTRICITY
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE2001149093 2001-02-09 2001-10-05 Halbleiterbauelement mit Harzgehäuse Expired - Lifetime DE10149093B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001033707A JP4286465B2 (ja) 2001-02-09 2001-02-09 半導体装置とその製造方法
JPP2001-033707 2001-02-09

Publications (2)

Publication Number Publication Date
DE10149093A1 DE10149093A1 (de) 2002-08-29
DE10149093B4 true DE10149093B4 (de) 2009-05-07

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DE2001149093 Expired - Lifetime DE10149093B4 (de) 2001-02-09 2001-10-05 Halbleiterbauelement mit Harzgehäuse

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US (2) US6979909B2 (enExample)
JP (1) JP4286465B2 (enExample)
KR (2) KR20020066362A (enExample)
DE (1) DE10149093B4 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011088218A1 (de) * 2011-12-12 2013-06-13 Robert Bosch Gmbh Elektronisches Leistungsmodul mit thermischen Kopplungsschichten zu einem Entwärmungselement
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
DE10142971A1 (de) * 2001-09-01 2003-03-27 Eupec Gmbh & Co Kg Leistungshalbleitermodul
JP2003100986A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置
US6677669B2 (en) * 2002-01-18 2004-01-13 International Rectifier Corporation Semiconductor package including two semiconductor die disposed within a common clip
JP3828036B2 (ja) * 2002-03-28 2006-09-27 三菱電機株式会社 樹脂モールド型デバイスの製造方法及び製造装置
US8169062B2 (en) * 2002-07-02 2012-05-01 Alpha And Omega Semiconductor Incorporated Integrated circuit package for semiconductior devices with improved electric resistance and inductance
US7042730B2 (en) * 2002-07-31 2006-05-09 International Rectifier Corporation Non-isolated heatsink(s) for power modules
KR100902766B1 (ko) * 2002-09-27 2009-06-15 페어차일드코리아반도체 주식회사 절연성 세라믹 히트 싱크를 갖는 디스크리트 패키지
TW582078B (en) * 2002-11-29 2004-04-01 Chipmos Technologies Bermuda Packaging process for improving effective die-bonding area
US7061025B2 (en) * 2003-03-10 2006-06-13 Mccolloch Lawrence R Optoelectronic device packaging assemblies and methods of making the same
US6919625B2 (en) * 2003-07-10 2005-07-19 General Semiconductor, Inc. Surface mount multichip devices
JP2005109100A (ja) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7239016B2 (en) * 2003-10-09 2007-07-03 Denso Corporation Semiconductor device having heat radiation plate and bonding member
JP2005136264A (ja) * 2003-10-31 2005-05-26 Mitsubishi Electric Corp 電力用半導体装置及び電力用半導体モジュール
US7250672B2 (en) * 2003-11-13 2007-07-31 International Rectifier Corporation Dual semiconductor die package with reverse lead form
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
US7151309B2 (en) * 2004-08-27 2006-12-19 Texas Instruments Incorporated Apparatus for improved power distribution in wirebond semiconductor packages
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
JP4784150B2 (ja) * 2004-11-10 2011-10-05 富士電機株式会社 半導体装置および、半導体装置の製造方法
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
JP4644008B2 (ja) * 2005-03-09 2011-03-02 三菱電機株式会社 半導体モジュール
JP4659534B2 (ja) * 2005-07-04 2011-03-30 三菱電機株式会社 半導体装置
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7310191B2 (en) 2006-03-09 2007-12-18 Matsushita Electric Industrial Co., Ltd. Zoom lens system, imaging device and camera
DE102006012781B4 (de) * 2006-03-17 2016-06-16 Infineon Technologies Ag Multichip-Modul mit verbessertem Systemträger und Verfahren zu seiner Herstellung
JP2007299874A (ja) * 2006-04-28 2007-11-15 Matsushita Electric Ind Co Ltd 熱伝導性基板及び電気伝導性基板
US20070257343A1 (en) * 2006-05-05 2007-11-08 Hauenstein Henning M Die-on-leadframe (dol) with high voltage isolation
JP2007312560A (ja) * 2006-05-22 2007-11-29 Toyota Motor Corp インシュレータおよび回転電機
WO2008016619A1 (en) 2006-07-31 2008-02-07 Vishay-Siliconix Molybdenum barrier metal for sic schottky diode and process of manufacture
US7928590B2 (en) * 2006-08-15 2011-04-19 Qimonda Ag Integrated circuit package with a heat dissipation device
US20080122896A1 (en) * 2006-11-03 2008-05-29 Stephenson Iii Stanley W Inkjet printhead with backside power return conductor
KR101489325B1 (ko) * 2007-03-12 2015-02-06 페어차일드코리아반도체 주식회사 플립-칩 방식의 적층형 파워 모듈 및 그 파워 모듈의제조방법
US8077475B2 (en) * 2007-09-27 2011-12-13 Infineon Technologies Ag Electronic device
JP5415823B2 (ja) * 2008-05-16 2014-02-12 株式会社デンソー 電子回路装置及びその製造方法
JP5067267B2 (ja) * 2008-06-05 2012-11-07 三菱電機株式会社 樹脂封止型半導体装置とその製造方法
JP5056620B2 (ja) * 2008-06-30 2012-10-24 新神戸電機株式会社 配線板
US8664038B2 (en) * 2008-12-04 2014-03-04 Stats Chippac Ltd. Integrated circuit packaging system with stacked paddle and method of manufacture thereof
JP2010182911A (ja) * 2009-02-06 2010-08-19 Renesas Electronics Corp 半導体装置の製造方法及びワイヤボンダ
DE102009045063C5 (de) 2009-09-28 2017-06-01 Infineon Technologies Ag Leistungshalbleitermodul mit angespritztem Kühlkörper, Leistungshalbleitermodulsystem und Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE102009046172A1 (de) * 2009-10-29 2011-05-05 Robert Bosch Gmbh Kühlkörper mit verbesserter Kühleffizienz, mit Kühlkörper ausgestattete Schaltung und Herstellungsverfahren hierfür
JP4947135B2 (ja) * 2009-12-04 2012-06-06 株式会社デンソー 半導体パッケージおよびその製造方法
DE102010001565A1 (de) * 2010-02-04 2011-08-04 Robert Bosch GmbH, 70469 Leistungsmodul mit einer Schaltungsanordnung, elektrische/elektronische Schaltungsanordnung, Verfahren zur Herstellung eines Leistungsmoduls
JP4717148B1 (ja) * 2010-05-28 2011-07-06 株式会社スズデン 照明器具および照明器具の製造方法
JP5257817B2 (ja) 2010-06-15 2013-08-07 三菱電機株式会社 半導体装置
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
US9324646B2 (en) 2010-12-13 2016-04-26 Infineon Technologies America Corp. Open source power quad flat no-lead (PQFN) package
US9362215B2 (en) * 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
JPWO2012081434A1 (ja) * 2010-12-16 2014-05-22 三菱電機株式会社 半導体装置
JP5714916B2 (ja) * 2011-01-12 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5936310B2 (ja) 2011-03-17 2016-06-22 三菱電機株式会社 パワー半導体モジュール及びその取り付け構造
JP5602095B2 (ja) * 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
JP2013070026A (ja) 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
DE202012013627U1 (de) * 2011-09-30 2018-09-14 Rohm Co., Ltd. Halbleiterbauteil
JP5940799B2 (ja) * 2011-11-22 2016-06-29 新光電気工業株式会社 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法
US8581416B2 (en) * 2011-12-15 2013-11-12 Semiconductor Components Industries, Llc Method of forming a semiconductor device and leadframe therefor
US8916968B2 (en) 2012-03-27 2014-12-23 Infineon Technologies Ag Multichip power semiconductor device
US8847385B2 (en) * 2012-03-27 2014-09-30 Infineon Technologies Ag Chip arrangement, a method for forming a chip arrangement, a chip package, a method for forming a chip package
US8866274B2 (en) 2012-03-27 2014-10-21 Infineon Technologies Ag Semiconductor packages and methods of formation thereof
CN104303297B (zh) 2012-05-16 2017-05-17 松下知识产权经营株式会社 电力用半导体模块
JP2014056982A (ja) * 2012-09-13 2014-03-27 Mitsubishi Electric Corp パワー半導体装置およびその製造方法
JP2014207430A (ja) * 2013-03-21 2014-10-30 ローム株式会社 半導体装置
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
JP2015006118A (ja) * 2013-06-24 2015-01-08 株式会社デンソー 車両用回転電機
JP2015006116A (ja) * 2013-06-24 2015-01-08 株式会社デンソー 車両用回転電機
US9324809B2 (en) * 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
KR102153041B1 (ko) * 2013-12-04 2020-09-07 삼성전자주식회사 반도체소자 패키지 및 그 제조방법
DE102014203225A1 (de) * 2014-02-24 2015-01-29 Siemens Aktiengesellschaft Anordnung und Verfahren zur Abfuhr der Wärmeverluste von elektrischen Bauelementen hoher Pulsleistung
US20150279793A1 (en) * 2014-03-27 2015-10-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
JP6407756B2 (ja) * 2014-03-31 2018-10-17 株式会社東芝 半導体モジュールの製造方法
EP3226293B1 (en) * 2014-11-27 2022-05-11 Mitsubishi Electric Corporation Semiconductor module and semiconductor driving device
JP6345583B2 (ja) * 2014-12-03 2018-06-20 ルネサスエレクトロニクス株式会社 半導体装置
DE102014118080B4 (de) * 2014-12-08 2020-10-15 Infineon Technologies Ag Elektronisches Modul mit einem Wärmespreizer und Verfahren zur Herstellung davon
KR101744536B1 (ko) * 2015-02-09 2017-06-08 엘지전자 주식회사 방열유닛 및 이를 포함하는 공기조화기의 실외기
JP6281506B2 (ja) * 2015-02-24 2018-02-21 トヨタ自動車株式会社 半導体モジュール
JP6522402B2 (ja) * 2015-04-16 2019-05-29 ローム株式会社 半導体装置
DE102015110655A1 (de) * 2015-07-02 2017-01-05 Infineon Technologies Austria Ag Elektronische Vorrichtung und Verfahren zum Herstellen derselben
US9859185B2 (en) 2016-01-28 2018-01-02 Kyocera International, Inc. Semiconductor packaging structure and package having stress release structure
CN108701661A (zh) * 2016-03-07 2018-10-23 三菱电机株式会社 半导体装置及半导体装置的制造方法
JP6673012B2 (ja) * 2016-05-26 2020-03-25 三菱電機株式会社 半導体装置およびその製造方法
JP2019054069A (ja) * 2017-09-14 2019-04-04 株式会社東芝 半導体装置
JP6843731B2 (ja) * 2017-11-22 2021-03-17 三菱電機株式会社 半導体装置
JP7388912B2 (ja) 2019-12-23 2023-11-29 ダイヤゼブラ電機株式会社 イグナイタ
IT202000032267A1 (it) * 2020-12-23 2022-06-23 St Microelectronics Srl Dispositivo elettronico incapsulato ad elevata dissipazione termica e relativo procedimento di fabbricazione

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink
DE4400341A1 (de) * 1993-01-08 1994-07-14 Mitsubishi Electric Corp Halbleitervorrichtung
US5598034A (en) * 1992-07-22 1997-01-28 Vlsi Packaging Corporation Plastic packaging of microelectronic circuit devices
DE19625240A1 (de) * 1995-10-26 1997-04-30 Mitsubishi Electric Corp Halbleitervorrichtung
EP0777272A2 (en) * 1995-11-30 1997-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
DE19700056A1 (de) * 1996-03-22 1997-09-25 Mitsubishi Electric Corp Halbleiterbauelement
JPH11243166A (ja) * 1998-02-24 1999-09-07 Fuji Electric Co Ltd 樹脂封止型半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671061B2 (ja) 1989-05-22 1994-09-07 株式会社東芝 樹脂封止型半導体装置
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
JP2564771B2 (ja) 1994-09-05 1996-12-18 株式会社後藤製作所 放熱板付き半導体装置及びその製造方法
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
JPH09186269A (ja) 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
JP3201277B2 (ja) 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JPH10135380A (ja) 1996-10-31 1998-05-22 Hitachi Ltd 半導体装置
US6001672A (en) * 1997-02-25 1999-12-14 Micron Technology, Inc. Method for transfer molding encapsulation of a semiconductor die with attached heat sink
JPH1117071A (ja) 1997-06-23 1999-01-22 Hitachi Ltd 半導体装置
JP3677403B2 (ja) * 1998-12-07 2005-08-03 パイオニア株式会社 発熱素子の放熱構造

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink
US5598034A (en) * 1992-07-22 1997-01-28 Vlsi Packaging Corporation Plastic packaging of microelectronic circuit devices
DE4400341A1 (de) * 1993-01-08 1994-07-14 Mitsubishi Electric Corp Halbleitervorrichtung
DE19625240A1 (de) * 1995-10-26 1997-04-30 Mitsubishi Electric Corp Halbleitervorrichtung
EP0777272A2 (en) * 1995-11-30 1997-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
DE19700056A1 (de) * 1996-03-22 1997-09-25 Mitsubishi Electric Corp Halbleiterbauelement
JPH11243166A (ja) * 1998-02-24 1999-09-07 Fuji Electric Co Ltd 樹脂封止型半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011088218A1 (de) * 2011-12-12 2013-06-13 Robert Bosch Gmbh Elektronisches Leistungsmodul mit thermischen Kopplungsschichten zu einem Entwärmungselement
DE102011088218B4 (de) * 2011-12-12 2015-10-15 Robert Bosch Gmbh Elektronisches Leistungsmodul mit thermischen Kopplungsschichten zu einem Entwärmungselement und Verfahren zur Herstellung
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers
US11652021B2 (en) 2019-05-07 2023-05-16 Zf Friedrichshafen Ag Power module having packaged power semiconductors for the controllable supply of electric power to a load

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US20060022331A1 (en) 2006-02-02
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