KR20020066362A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

Info

Publication number
KR20020066362A
KR20020066362A KR1020010058940A KR20010058940A KR20020066362A KR 20020066362 A KR20020066362 A KR 20020066362A KR 1020010058940 A KR1020010058940 A KR 1020010058940A KR 20010058940 A KR20010058940 A KR 20010058940A KR 20020066362 A KR20020066362 A KR 20020066362A
Authority
KR
South Korea
Prior art keywords
lead frame
semiconductor device
metal block
insulating layer
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010058940A
Other languages
English (en)
Korean (ko)
Inventor
시노하라토시아키
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20020066362A publication Critical patent/KR20020066362A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR1020010058940A 2001-02-09 2001-09-24 반도체 장치 및 그 제조방법 Ceased KR20020066362A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001033707A JP4286465B2 (ja) 2001-02-09 2001-02-09 半導体装置とその製造方法
JPJP-P-2001-00033707 2001-02-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020040059215A Division KR20040080394A (ko) 2001-02-09 2004-07-28 반도체장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR20020066362A true KR20020066362A (ko) 2002-08-16

Family

ID=18897415

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020010058940A Ceased KR20020066362A (ko) 2001-02-09 2001-09-24 반도체 장치 및 그 제조방법
KR1020040059215A Ceased KR20040080394A (ko) 2001-02-09 2004-07-28 반도체장치 및 그 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020040059215A Ceased KR20040080394A (ko) 2001-02-09 2004-07-28 반도체장치 및 그 제조방법

Country Status (4)

Country Link
US (2) US6979909B2 (enExample)
JP (1) JP4286465B2 (enExample)
KR (2) KR20020066362A (enExample)
DE (1) DE10149093B4 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100806479B1 (ko) * 2003-09-30 2008-02-21 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
DE10142971A1 (de) * 2001-09-01 2003-03-27 Eupec Gmbh & Co Kg Leistungshalbleitermodul
JP2003100986A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置
US6677669B2 (en) * 2002-01-18 2004-01-13 International Rectifier Corporation Semiconductor package including two semiconductor die disposed within a common clip
JP3828036B2 (ja) * 2002-03-28 2006-09-27 三菱電機株式会社 樹脂モールド型デバイスの製造方法及び製造装置
US8169062B2 (en) * 2002-07-02 2012-05-01 Alpha And Omega Semiconductor Incorporated Integrated circuit package for semiconductior devices with improved electric resistance and inductance
US7042730B2 (en) * 2002-07-31 2006-05-09 International Rectifier Corporation Non-isolated heatsink(s) for power modules
KR100902766B1 (ko) * 2002-09-27 2009-06-15 페어차일드코리아반도체 주식회사 절연성 세라믹 히트 싱크를 갖는 디스크리트 패키지
TW582078B (en) * 2002-11-29 2004-04-01 Chipmos Technologies Bermuda Packaging process for improving effective die-bonding area
US7061025B2 (en) * 2003-03-10 2006-06-13 Mccolloch Lawrence R Optoelectronic device packaging assemblies and methods of making the same
US6919625B2 (en) * 2003-07-10 2005-07-19 General Semiconductor, Inc. Surface mount multichip devices
US7239016B2 (en) * 2003-10-09 2007-07-03 Denso Corporation Semiconductor device having heat radiation plate and bonding member
JP2005136264A (ja) * 2003-10-31 2005-05-26 Mitsubishi Electric Corp 電力用半導体装置及び電力用半導体モジュール
US7250672B2 (en) * 2003-11-13 2007-07-31 International Rectifier Corporation Dual semiconductor die package with reverse lead form
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
US7151309B2 (en) * 2004-08-27 2006-12-19 Texas Instruments Incorporated Apparatus for improved power distribution in wirebond semiconductor packages
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
JP4784150B2 (ja) * 2004-11-10 2011-10-05 富士電機株式会社 半導体装置および、半導体装置の製造方法
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
JP4644008B2 (ja) * 2005-03-09 2011-03-02 三菱電機株式会社 半導体モジュール
JP4659534B2 (ja) * 2005-07-04 2011-03-30 三菱電機株式会社 半導体装置
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7310191B2 (en) 2006-03-09 2007-12-18 Matsushita Electric Industrial Co., Ltd. Zoom lens system, imaging device and camera
DE102006012781B4 (de) * 2006-03-17 2016-06-16 Infineon Technologies Ag Multichip-Modul mit verbessertem Systemträger und Verfahren zu seiner Herstellung
JP2007299874A (ja) * 2006-04-28 2007-11-15 Matsushita Electric Ind Co Ltd 熱伝導性基板及び電気伝導性基板
US20070257343A1 (en) * 2006-05-05 2007-11-08 Hauenstein Henning M Die-on-leadframe (dol) with high voltage isolation
JP2007312560A (ja) * 2006-05-22 2007-11-29 Toyota Motor Corp インシュレータおよび回転電機
EP2047514A4 (en) 2006-07-31 2010-12-01 Vishay Siliconix MOLYBDENUM BARRIER METAL FOR SIC SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME
US7928590B2 (en) * 2006-08-15 2011-04-19 Qimonda Ag Integrated circuit package with a heat dissipation device
US20080122896A1 (en) * 2006-11-03 2008-05-29 Stephenson Iii Stanley W Inkjet printhead with backside power return conductor
KR101489325B1 (ko) 2007-03-12 2015-02-06 페어차일드코리아반도체 주식회사 플립-칩 방식의 적층형 파워 모듈 및 그 파워 모듈의제조방법
US8077475B2 (en) * 2007-09-27 2011-12-13 Infineon Technologies Ag Electronic device
JP5415823B2 (ja) * 2008-05-16 2014-02-12 株式会社デンソー 電子回路装置及びその製造方法
JP5067267B2 (ja) * 2008-06-05 2012-11-07 三菱電機株式会社 樹脂封止型半導体装置とその製造方法
JP5056620B2 (ja) * 2008-06-30 2012-10-24 新神戸電機株式会社 配線板
US8664038B2 (en) * 2008-12-04 2014-03-04 Stats Chippac Ltd. Integrated circuit packaging system with stacked paddle and method of manufacture thereof
JP2010182911A (ja) * 2009-02-06 2010-08-19 Renesas Electronics Corp 半導体装置の製造方法及びワイヤボンダ
DE102009045063C5 (de) 2009-09-28 2017-06-01 Infineon Technologies Ag Leistungshalbleitermodul mit angespritztem Kühlkörper, Leistungshalbleitermodulsystem und Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE102009046172A1 (de) * 2009-10-29 2011-05-05 Robert Bosch Gmbh Kühlkörper mit verbesserter Kühleffizienz, mit Kühlkörper ausgestattete Schaltung und Herstellungsverfahren hierfür
JP4947135B2 (ja) * 2009-12-04 2012-06-06 株式会社デンソー 半導体パッケージおよびその製造方法
DE102010001565A1 (de) * 2010-02-04 2011-08-04 Robert Bosch GmbH, 70469 Leistungsmodul mit einer Schaltungsanordnung, elektrische/elektronische Schaltungsanordnung, Verfahren zur Herstellung eines Leistungsmoduls
JP4717148B1 (ja) * 2010-05-28 2011-07-06 株式会社スズデン 照明器具および照明器具の製造方法
JP5257817B2 (ja) 2010-06-15 2013-08-07 三菱電機株式会社 半導体装置
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9362215B2 (en) * 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9324646B2 (en) 2010-12-13 2016-04-26 Infineon Technologies America Corp. Open source power quad flat no-lead (PQFN) package
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
WO2012081434A1 (ja) * 2010-12-16 2012-06-21 三菱電機株式会社 半導体装置
JP5714916B2 (ja) * 2011-01-12 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5936310B2 (ja) 2011-03-17 2016-06-22 三菱電機株式会社 パワー半導体モジュール及びその取り付け構造
JP5602095B2 (ja) * 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
JP2013070026A (ja) 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
DE202012013627U1 (de) * 2011-09-30 2018-09-14 Rohm Co., Ltd. Halbleiterbauteil
JP5940799B2 (ja) * 2011-11-22 2016-06-29 新光電気工業株式会社 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法
DE102011088218B4 (de) * 2011-12-12 2015-10-15 Robert Bosch Gmbh Elektronisches Leistungsmodul mit thermischen Kopplungsschichten zu einem Entwärmungselement und Verfahren zur Herstellung
US8581416B2 (en) * 2011-12-15 2013-11-12 Semiconductor Components Industries, Llc Method of forming a semiconductor device and leadframe therefor
US8916968B2 (en) 2012-03-27 2014-12-23 Infineon Technologies Ag Multichip power semiconductor device
US8847385B2 (en) * 2012-03-27 2014-09-30 Infineon Technologies Ag Chip arrangement, a method for forming a chip arrangement, a chip package, a method for forming a chip package
US8866274B2 (en) 2012-03-27 2014-10-21 Infineon Technologies Ag Semiconductor packages and methods of formation thereof
JP5919511B2 (ja) 2012-05-16 2016-05-18 パナソニックＩｐマネジメント株式会社 電力用半導体モジュール
JP2014056982A (ja) * 2012-09-13 2014-03-27 Mitsubishi Electric Corp パワー半導体装置およびその製造方法
JP2014207430A (ja) 2013-03-21 2014-10-30 ローム株式会社 半導体装置
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
JP2015006116A (ja) * 2013-06-24 2015-01-08 株式会社デンソー 車両用回転電機
JP2015006118A (ja) * 2013-06-24 2015-01-08 株式会社デンソー 車両用回転電機
US9324809B2 (en) * 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
KR102153041B1 (ko) * 2013-12-04 2020-09-07 삼성전자주식회사 반도체소자 패키지 및 그 제조방법
DE102014203225A1 (de) * 2014-02-24 2015-01-29 Siemens Aktiengesellschaft Anordnung und Verfahren zur Abfuhr der Wärmeverluste von elektrischen Bauelementen hoher Pulsleistung
US20150279793A1 (en) * 2014-03-27 2015-10-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
JP6407756B2 (ja) * 2014-03-31 2018-10-17 株式会社東芝 半導体モジュールの製造方法
CN107004673B (zh) * 2014-11-27 2020-01-03 三菱电机株式会社 半导体驱动装置
JP6345583B2 (ja) * 2014-12-03 2018-06-20 ルネサスエレクトロニクス株式会社 半導体装置
DE102014118080B4 (de) 2014-12-08 2020-10-15 Infineon Technologies Ag Elektronisches Modul mit einem Wärmespreizer und Verfahren zur Herstellung davon
KR101744536B1 (ko) * 2015-02-09 2017-06-08 엘지전자 주식회사 방열유닛 및 이를 포함하는 공기조화기의 실외기
JP6281506B2 (ja) * 2015-02-24 2018-02-21 トヨタ自動車株式会社 半導体モジュール
JP6522402B2 (ja) * 2015-04-16 2019-05-29 ローム株式会社 半導体装置
DE102015110655A1 (de) 2015-07-02 2017-01-05 Infineon Technologies Austria Ag Elektronische Vorrichtung und Verfahren zum Herstellen derselben
US9859185B2 (en) 2016-01-28 2018-01-02 Kyocera International, Inc. Semiconductor packaging structure and package having stress release structure
WO2017154072A1 (ja) * 2016-03-07 2017-09-14 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP6673012B2 (ja) * 2016-05-26 2020-03-25 三菱電機株式会社 半導体装置およびその製造方法
JP2019054069A (ja) * 2017-09-14 2019-04-04 株式会社東芝 半導体装置
JP6843731B2 (ja) * 2017-11-22 2021-03-17 三菱電機株式会社 半導体装置
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers
JP7388912B2 (ja) 2019-12-23 2023-11-29 ダイヤゼブラ電機株式会社 イグナイタ
IT202000032267A1 (it) 2020-12-23 2022-06-23 St Microelectronics Srl Dispositivo elettronico incapsulato ad elevata dissipazione termica e relativo procedimento di fabbricazione

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671061B2 (ja) * 1989-05-22 1994-09-07 株式会社東芝 樹脂封止型半導体装置
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
US5598034A (en) * 1992-07-22 1997-01-28 Vlsi Packaging Corporation Plastic packaging of microelectronic circuit devices
JPH06209054A (ja) 1993-01-08 1994-07-26 Mitsubishi Electric Corp 半導体装置
JP2564771B2 (ja) 1994-09-05 1996-12-18 株式会社後藤製作所 放熱板付き半導体装置及びその製造方法
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
JP3345241B2 (ja) 1995-11-30 2002-11-18 三菱電機株式会社 半導体装置
JPH09186269A (ja) 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
JPH09260550A (ja) 1996-03-22 1997-10-03 Mitsubishi Electric Corp 半導体装置
JP3201277B2 (ja) 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JPH10135380A (ja) 1996-10-31 1998-05-22 Hitachi Ltd 半導体装置
US6001672A (en) * 1997-02-25 1999-12-14 Micron Technology, Inc. Method for transfer molding encapsulation of a semiconductor die with attached heat sink
JPH1117071A (ja) 1997-06-23 1999-01-22 Hitachi Ltd 半導体装置
JPH11243166A (ja) 1998-02-24 1999-09-07 Fuji Electric Co Ltd 樹脂封止型半導体装置
JP3677403B2 (ja) * 1998-12-07 2005-08-03 パイオニア株式会社 発熱素子の放熱構造

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100806479B1 (ko) * 2003-09-30 2008-02-21 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
US7671453B2 (en) 2003-09-30 2010-03-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for producing the same

Also Published As

Publication number Publication date
US7045907B2 (en) 2006-05-16
US6979909B2 (en) 2005-12-27
KR20040080394A (ko) 2004-09-18
JP4286465B2 (ja) 2009-07-01
DE10149093A1 (de) 2002-08-29
DE10149093B4 (de) 2009-05-07
US20020109211A1 (en) 2002-08-15
US20060022331A1 (en) 2006-02-02
JP2002237562A (ja) 2002-08-23

Similar Documents

Publication Publication Date Title
KR20020066362A (ko) 반도체 장치 및 그 제조방법
US10770380B2 (en) Semiconductor device and method for manufacturing semiconductor device
KR100478883B1 (ko) 반도체장치
KR100957078B1 (ko) 전기적으로 절연된 전력 장치 패키지
CN111276447B (zh) 双侧冷却功率模块及其制造方法
JP3390661B2 (ja) パワーモジュール
EP3428962B1 (en) Semiconductor device and method for manufacturing semiconductor device
CN102347245B (zh) 电路装置的制造方法
CN105684147A (zh) 半导体模块及其制造方法
WO2016166834A1 (ja) 半導体装置
CN111095537B (zh) 半导体装置及具备该半导体装置的功率转换装置
JP2002329828A (ja) 半導体装置
JP4784150B2 (ja) 半導体装置および、半導体装置の製造方法
KR101239117B1 (ko) 전력 반도체 패키지 및 그 제조방법
US20250112114A1 (en) Semiconductor device package with integral thermal dissipation structure
JP7142714B2 (ja) 電力用半導体装置の製造方法
JP2626619B2 (ja) 樹脂封止型半導体装置及びその製造方法
JP2008004971A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20010924

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20030930

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20040529

Patent event code: PE09021S01D

A107 Divisional application of patent
PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20040728

Patent event code: PA01071R01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20040923

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20050329

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20040923

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20040529

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20030930

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I