DE69417329T2 - In Harz versiegelte Halbleiteranordnung - Google Patents

In Harz versiegelte Halbleiteranordnung

Info

Publication number
DE69417329T2
DE69417329T2 DE69417329T DE69417329T DE69417329T2 DE 69417329 T2 DE69417329 T2 DE 69417329T2 DE 69417329 T DE69417329 T DE 69417329T DE 69417329 T DE69417329 T DE 69417329T DE 69417329 T2 DE69417329 T2 DE 69417329T2
Authority
DE
Germany
Prior art keywords
semiconductor device
sealed semiconductor
resin sealed
resin
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417329T
Other languages
English (en)
Other versions
DE69417329D1 (de
Inventor
Fumio Nagaune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69417329D1 publication Critical patent/DE69417329D1/de
Publication of DE69417329T2 publication Critical patent/DE69417329T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69417329T 1993-09-21 1994-09-20 In Harz versiegelte Halbleiteranordnung Expired - Fee Related DE69417329T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5233975A JP2973792B2 (ja) 1993-09-21 1993-09-21 樹脂封止形半導体装置

Publications (2)

Publication Number Publication Date
DE69417329D1 DE69417329D1 (de) 1999-04-29
DE69417329T2 true DE69417329T2 (de) 1999-12-16

Family

ID=16963575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417329T Expired - Fee Related DE69417329T2 (de) 1993-09-21 1994-09-20 In Harz versiegelte Halbleiteranordnung

Country Status (4)

Country Link
US (1) US5539253A (de)
EP (1) EP0645812B1 (de)
JP (1) JP2973792B2 (de)
DE (1) DE69417329T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3353526B2 (ja) * 1995-03-23 2002-12-03 株式会社デンソー 半導体パッケージ及びその製造方法
JP3540471B2 (ja) * 1995-11-30 2004-07-07 三菱電機株式会社 半導体モジュール
US6288764B1 (en) * 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
US6022616A (en) * 1998-01-23 2000-02-08 National Starch And Chemical Investment Holding Corporation Adhesive composition with small particle size for microelectronic devices
KR20010058771A (ko) * 1999-12-30 2001-07-06 구자홍 전기/전자 제품용 원 시스템 모듈
US7130198B2 (en) * 2001-12-06 2006-10-31 Rohm Co., Ltd. Resin-packaged protection circuit module for rechargeable batteries and method of making the same
EP1465250A1 (de) * 2003-04-02 2004-10-06 Abb Research Ltd. Isolierter Leistungshalbleitermodul mit verringerter Teilentladung und Verfahren zu seiner Herstellung
JP4644008B2 (ja) * 2005-03-09 2011-03-02 三菱電機株式会社 半導体モジュール
JP2008070090A (ja) * 2006-09-15 2008-03-27 Aisan Ind Co Ltd 熱交換装置及び燃料供給装置
JP4748173B2 (ja) * 2008-03-04 2011-08-17 株式会社デンソー 半導体モジュール及びその製造方法
JP5195282B2 (ja) * 2008-10-28 2013-05-08 富士電機株式会社 半導体装置およびその製造方法
FR2953094B1 (fr) * 2009-11-20 2011-12-09 Thales Sa Dispositif de dissipation thermique, notamment pour composants verticaux et/ou de forme complexe
CN103477429B (zh) * 2011-05-13 2017-04-12 富士电机株式会社 半导体器件及其制造方法
JP6620941B2 (ja) * 2016-08-22 2019-12-18 株式会社オートネットワーク技術研究所 電気接続箱
JP6693441B2 (ja) * 2017-02-27 2020-05-13 オムロン株式会社 電子装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3309679A1 (de) * 1983-03-17 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit giessharzfuellung
JPS60103649A (ja) * 1983-11-11 1985-06-07 Hitachi Ltd 半導体装置
DE3604882A1 (de) * 1986-02-15 1987-08-20 Bbc Brown Boveri & Cie Leistungshalbleitermodul und verfahren zur herstellung des moduls
JPS6346755A (ja) * 1986-08-15 1988-02-27 Hitachi Ltd 絶縁モ−ルド型半導体装置
US4920405A (en) * 1986-11-28 1990-04-24 Fuji Electric Co., Ltd. Overcurrent limiting semiconductor device
JPH0682945B2 (ja) * 1987-02-25 1994-10-19 三菱電機株式会社 半導体装置
JPS63304755A (ja) * 1987-06-05 1988-12-13 Nec Corp 電話機呼出及び接続方式
JP2580779B2 (ja) * 1989-06-15 1997-02-12 富士電機株式会社 半導体装置
US5172215A (en) * 1990-03-06 1992-12-15 Fuji Electric Co., Ltd. Overcurrent-limiting type semiconductor device

Also Published As

Publication number Publication date
EP0645812A1 (de) 1995-03-29
EP0645812B1 (de) 1999-03-24
JPH0794637A (ja) 1995-04-07
US5539253A (en) 1996-07-23
JP2973792B2 (ja) 1999-11-08
DE69417329D1 (de) 1999-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee