JP3976462B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3976462B2
JP3976462B2 JP2000021758A JP2000021758A JP3976462B2 JP 3976462 B2 JP3976462 B2 JP 3976462B2 JP 2000021758 A JP2000021758 A JP 2000021758A JP 2000021758 A JP2000021758 A JP 2000021758A JP 3976462 B2 JP3976462 B2 JP 3976462B2
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JP
Japan
Prior art keywords
film
ruthenium
electrode
forming
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000021758A
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English (en)
Japanese (ja)
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JP2001210802A5 (enExample
JP2001210802A (ja
Inventor
裕一 松井
正彦 平谷
泰洋 嶋本
吉孝 中村
俊秀 生田目
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Priority to JP2000021758A priority Critical patent/JP3976462B2/ja
Priority to TW090101415A priority patent/TW497255B/zh
Priority to US09/767,706 priority patent/US6503791B2/en
Priority to KR1020010003750A priority patent/KR100737192B1/ko
Priority to US09/810,627 priority patent/US6555429B2/en
Priority to US09/810,401 priority patent/US6483143B2/en
Publication of JP2001210802A publication Critical patent/JP2001210802A/ja
Priority to US10/211,569 priority patent/US6521494B2/en
Publication of JP2001210802A5 publication Critical patent/JP2001210802A5/ja
Application granted granted Critical
Publication of JP3976462B2 publication Critical patent/JP3976462B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000021758A 2000-01-26 2000-01-26 半導体装置の製造方法 Expired - Fee Related JP3976462B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000021758A JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法
TW090101415A TW497255B (en) 2000-01-26 2001-01-20 Semiconductor device and method for making the same
US09/767,706 US6503791B2 (en) 2000-01-26 2001-01-24 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device
KR1020010003750A KR100737192B1 (ko) 2000-01-26 2001-01-26 반도체 장치 및 그 제조 방법
US09/810,627 US6555429B2 (en) 2000-01-26 2001-03-19 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device
US09/810,401 US6483143B2 (en) 2000-01-26 2001-03-19 Semiconductor device having a capacitor structure including a self-alignment deposition preventing film
US10/211,569 US6521494B2 (en) 2000-01-26 2002-08-05 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000021758A JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001210802A JP2001210802A (ja) 2001-08-03
JP2001210802A5 JP2001210802A5 (enExample) 2004-12-16
JP3976462B2 true JP3976462B2 (ja) 2007-09-19

Family

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Family Applications (1)

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JP2000021758A Expired - Fee Related JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法

Country Status (4)

Country Link
US (4) US6503791B2 (enExample)
JP (1) JP3976462B2 (enExample)
KR (1) KR100737192B1 (enExample)
TW (1) TW497255B (enExample)

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Also Published As

Publication number Publication date
TW497255B (en) 2002-08-01
KR20010083146A (ko) 2001-08-31
US20020030210A1 (en) 2002-03-14
US6483143B2 (en) 2002-11-19
US20010023955A1 (en) 2001-09-27
US20010026988A1 (en) 2001-10-04
US6555429B2 (en) 2003-04-29
US20020192896A1 (en) 2002-12-19
JP2001210802A (ja) 2001-08-03
US6521494B2 (en) 2003-02-18
US6503791B2 (en) 2003-01-07
KR100737192B1 (ko) 2007-07-10

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