JP2001210802A5 - - Google Patents

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Publication number
JP2001210802A5
JP2001210802A5 JP2000021758A JP2000021758A JP2001210802A5 JP 2001210802 A5 JP2001210802 A5 JP 2001210802A5 JP 2000021758 A JP2000021758 A JP 2000021758A JP 2000021758 A JP2000021758 A JP 2000021758A JP 2001210802 A5 JP2001210802 A5 JP 2001210802A5
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JP
Japan
Prior art keywords
film
forming
ruthenium
concave hole
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000021758A
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English (en)
Japanese (ja)
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JP3976462B2 (ja
JP2001210802A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2000021758A external-priority patent/JP3976462B2/ja
Priority to JP2000021758A priority Critical patent/JP3976462B2/ja
Priority to TW090101415A priority patent/TW497255B/zh
Priority to US09/767,706 priority patent/US6503791B2/en
Priority to KR1020010003750A priority patent/KR100737192B1/ko
Priority to US09/810,627 priority patent/US6555429B2/en
Priority to US09/810,401 priority patent/US6483143B2/en
Publication of JP2001210802A publication Critical patent/JP2001210802A/ja
Priority to US10/211,569 priority patent/US6521494B2/en
Publication of JP2001210802A5 publication Critical patent/JP2001210802A5/ja
Publication of JP3976462B2 publication Critical patent/JP3976462B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000021758A 2000-01-26 2000-01-26 半導体装置の製造方法 Expired - Fee Related JP3976462B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000021758A JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法
TW090101415A TW497255B (en) 2000-01-26 2001-01-20 Semiconductor device and method for making the same
US09/767,706 US6503791B2 (en) 2000-01-26 2001-01-24 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device
KR1020010003750A KR100737192B1 (ko) 2000-01-26 2001-01-26 반도체 장치 및 그 제조 방법
US09/810,627 US6555429B2 (en) 2000-01-26 2001-03-19 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device
US09/810,401 US6483143B2 (en) 2000-01-26 2001-03-19 Semiconductor device having a capacitor structure including a self-alignment deposition preventing film
US10/211,569 US6521494B2 (en) 2000-01-26 2002-08-05 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000021758A JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001210802A JP2001210802A (ja) 2001-08-03
JP2001210802A5 true JP2001210802A5 (enExample) 2004-12-16
JP3976462B2 JP3976462B2 (ja) 2007-09-19

Family

ID=18548127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000021758A Expired - Fee Related JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法

Country Status (4)

Country Link
US (4) US6503791B2 (enExample)
JP (1) JP3976462B2 (enExample)
KR (1) KR100737192B1 (enExample)
TW (1) TW497255B (enExample)

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