KR100737192B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100737192B1
KR100737192B1 KR1020010003750A KR20010003750A KR100737192B1 KR 100737192 B1 KR100737192 B1 KR 100737192B1 KR 1020010003750 A KR1020010003750 A KR 1020010003750A KR 20010003750 A KR20010003750 A KR 20010003750A KR 100737192 B1 KR100737192 B1 KR 100737192B1
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South Korea
Prior art keywords
film
forming
electrode
conductive material
insulating film
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Expired - Fee Related
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KR1020010003750A
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English (en)
Korean (ko)
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KR20010083146A (ko
Inventor
유이찌 마쯔이
마사히꼬 히라따니
야스히로 시마모또
요시따까 나까무라
도시히데 나바따메
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엘피다 메모리, 아이엔씨.
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Publication of KR20010083146A publication Critical patent/KR20010083146A/ko
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Publication of KR100737192B1 publication Critical patent/KR100737192B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020010003750A 2000-01-26 2001-01-26 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100737192B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000021758A JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法
JP2000-021758 2000-01-26

Publications (2)

Publication Number Publication Date
KR20010083146A KR20010083146A (ko) 2001-08-31
KR100737192B1 true KR100737192B1 (ko) 2007-07-10

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KR1020010003750A Expired - Fee Related KR100737192B1 (ko) 2000-01-26 2001-01-26 반도체 장치 및 그 제조 방법

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US (4) US6503791B2 (enExample)
JP (1) JP3976462B2 (enExample)
KR (1) KR100737192B1 (enExample)
TW (1) TW497255B (enExample)

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US6440495B1 (en) 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
JP4041396B2 (ja) 2000-08-11 2008-01-30 株式会社ルネサステクノロジ 半導体装置の製造方法
KR100396891B1 (ko) * 2001-03-21 2003-09-03 삼성전자주식회사 반도체 소자의 금속 배선 형성 방법
KR100429876B1 (ko) * 2001-07-27 2004-05-04 삼성전자주식회사 고밀도 씨딩층을 갖는 루테늄막을 구비하는 반도체 소자의제조 방법 및 그러한 반도체 소자를 형성하기 위한 제조장비
JP4065670B2 (ja) * 2001-08-09 2008-03-26 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
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KR20030058039A (ko) * 2001-12-29 2003-07-07 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
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JP4470144B2 (ja) 2003-03-19 2010-06-02 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
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KR100583964B1 (ko) * 2004-12-27 2006-05-26 삼성전자주식회사 도드라진 셀 랜딩패드를 갖는 반도체소자 및 그 제조방법
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JP6107430B2 (ja) * 2012-06-08 2017-04-05 豊田合成株式会社 半導体装置
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KR102143438B1 (ko) * 2014-12-04 2020-08-11 삼성전자주식회사 반도체 소자용 액티브 구조물 및 이의 형성 방법
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Also Published As

Publication number Publication date
JP2001210802A (ja) 2001-08-03
US20020192896A1 (en) 2002-12-19
TW497255B (en) 2002-08-01
KR20010083146A (ko) 2001-08-31
US6555429B2 (en) 2003-04-29
US20010023955A1 (en) 2001-09-27
US6483143B2 (en) 2002-11-19
US20020030210A1 (en) 2002-03-14
US6521494B2 (en) 2003-02-18
US20010026988A1 (en) 2001-10-04
JP3976462B2 (ja) 2007-09-19
US6503791B2 (en) 2003-01-07

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