JP2021504959A - ディスプレイ用発光ダイオードおよびこれを有するディスプレイ装置 - Google Patents

ディスプレイ用発光ダイオードおよびこれを有するディスプレイ装置 Download PDF

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Publication number
JP2021504959A
JP2021504959A JP2020529153A JP2020529153A JP2021504959A JP 2021504959 A JP2021504959 A JP 2021504959A JP 2020529153 A JP2020529153 A JP 2020529153A JP 2020529153 A JP2020529153 A JP 2020529153A JP 2021504959 A JP2021504959 A JP 2021504959A
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Japan
Prior art keywords
led stack
stack
led
type semiconductor
semiconductor layer
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Pending
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JP2020529153A
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English (en)
Japanese (ja)
Inventor
ヒョン チェ，ジョン
ヒョン チェ，ジョン
ヨン キム，チャン
ヨン キム，チャン
ジュン イ，ホ
ジュン イ，ホ
ギュ ジャン，ソン
ギュ ジャン，ソン
フン イ，チョン
フン イ，チョン
スン チョ，デ
スン チョ，デ
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication of JP2021504959A publication Critical patent/JP2021504959A/ja
Priority to JP2023188299A priority Critical patent/JP2024020283A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/13—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2020529153A 2017-11-27 2018-11-27 ディスプレイ用発光ダイオードおよびこれを有するディスプレイ装置 Pending JP2021504959A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023188299A JP2024020283A (ja) 2017-11-27 2023-11-02 ディスプレイ用発光ダイオードおよびこれを有するディスプレイ装置

Applications Claiming Priority (17)

Application Number Priority Date Filing Date Title
US201762590830P 2017-11-27 2017-11-27
US62/590,830 2017-11-27
US201762595415P 2017-12-06 2017-12-06
US62/595,415 2017-12-06
US201762597614P 2017-12-12 2017-12-12
US62/597,614 2017-12-12
US201762598223P 2017-12-13 2017-12-13
US62/598,223 2017-12-13
US201862621492P 2018-01-24 2018-01-24
US62/621,492 2018-01-24
US201862624639P 2018-01-31 2018-01-31
US201862624667P 2018-01-31 2018-01-31
US62/624,639 2018-01-31
US62/624,667 2018-01-31
US16/200,036 2018-11-26
US16/200,036 US12100696B2 (en) 2017-11-27 2018-11-26 Light emitting diode for display and display apparatus having the same
PCT/KR2018/014672 WO2019103567A1 (en) 2017-11-27 2018-11-27 Light emitting diode for display and display apparatus having the same

Related Child Applications (1)

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JP2023188299A Division JP2024020283A (ja) 2017-11-27 2023-11-02 ディスプレイ用発光ダイオードおよびこれを有するディスプレイ装置

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JP2021504959A true JP2021504959A (ja) 2021-02-15

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JP2023188299A Pending JP2024020283A (ja) 2017-11-27 2023-11-02 ディスプレイ用発光ダイオードおよびこれを有するディスプレイ装置

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Country Status (7)

Country Link
US (4) US12100696B2 (enExample)
EP (1) EP3718141A4 (enExample)
JP (2) JP2021504959A (enExample)
KR (1) KR102801350B1 (enExample)
CN (7) CN110993592A (enExample)
SA (1) SA520412044B1 (enExample)
WO (1) WO2019103567A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023076104A (ja) * 2021-11-22 2023-06-01 日亜化学工業株式会社 発光素子
WO2025033475A1 (ja) * 2023-08-10 2025-02-13 Ｄｏｗａエレクトロニクス株式会社 光半導体素子およびその製造方法
JP2025520535A (ja) * 2022-06-24 2025-07-03 ルミレッズ リミテッド ライアビリティ カンパニー カラー調整可能な画素の小型アレイ

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI672466B (zh) * 2018-04-11 2019-09-21 台灣愛司帝科技股份有限公司 微型發光二極體顯示器及其製作方法
US10879419B2 (en) 2018-08-17 2020-12-29 Seoul Viosys Co., Ltd. Light emitting device
EP3882988A4 (en) * 2018-11-13 2022-06-29 Xiamen San'an Optoelectronics Technology Co., Ltd. Light-emitting diode
US20210336099A1 (en) * 2018-11-16 2021-10-28 Sakai Display Products Corporation Micro led device and method for manufacturing same
US20220013510A1 (en) * 2018-11-16 2022-01-13 Sakai Display Products Corporation Micro led device and method for manufacturing same
KR102694329B1 (ko) * 2018-12-10 2024-08-13 삼성전자주식회사 디스플레이 모듈, 이를 포함하는 디스플레이 장치 및 디스플레이 모듈 제조 방법
US11450648B2 (en) * 2019-03-19 2022-09-20 Seoul Viosys Co., Ltd. Light emitting device package and application thereof
CN119604108A (zh) * 2019-06-19 2025-03-11 上海显耀显示科技有限公司 用于多色led像素单元的系统和方法
DE24203353T1 (de) 2019-06-19 2025-03-13 Jade Bird Display (shanghai) Limited Systeme und verfahren für koaxiale mehrfarbige led
US10971650B2 (en) * 2019-07-29 2021-04-06 Lextar Electronics Corporation Light emitting device
GB2586580B (en) * 2019-08-06 2022-01-12 Plessey Semiconductors Ltd LED array and method of forming a LED array
TWI891064B (zh) * 2019-08-22 2025-07-21 晶元光電股份有限公司 發光裝置、其製造方法及顯示模組
DE102019122945A1 (de) * 2019-08-27 2021-03-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und verfahren zur herstellung eines halbleiterchips
US11114419B2 (en) * 2019-09-11 2021-09-07 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
US10930814B1 (en) * 2019-09-11 2021-02-23 Jade Bird Display (shanghai) Limited Method of manufacturing multi-color light emitting pixel unit
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US11398462B2 (en) * 2019-09-18 2022-07-26 Seoul Viosys Co., Ltd. Light emitting device for display and light emitting package having the same
US11670666B2 (en) * 2019-10-08 2023-06-06 Luminus, Inc. Light-emitting systems with close-packed LEDs and/or electrically isolated substrates and methods of making and/or operating the same
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
CN212934617U (zh) * 2019-10-28 2021-04-09 首尔伟傲世有限公司 发光元件及显示装置
US11658275B2 (en) * 2019-10-28 2023-05-23 Seoul Viosys Co., Ltd. Light emitting device for display and LED display apparatus having the same
CN110767670B (zh) * 2019-10-31 2022-11-15 成都辰显光电有限公司 显示面板、显示装置和显示面板的制作方法
CN211700319U (zh) * 2019-12-23 2020-10-16 天津三安光电有限公司 一种半导体发光元件
US20210193866A1 (en) * 2019-12-24 2021-06-24 Mikro Mesa Technology Co., Ltd. Method of forming display device with light-emitting diode
KR102767559B1 (ko) * 2019-12-26 2025-02-12 엘지디스플레이 주식회사 Led 표시장치 및 이의 제조방법
WO2021177591A1 (ko) * 2020-03-03 2021-09-10 한국과학기술원 저전류 영역에서의 효율 증대 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이
CN121078879A (zh) * 2020-03-30 2025-12-05 上海显耀显示科技有限公司 用于具有键合结构的led的系统和方法
US20230138761A1 (en) * 2020-04-30 2023-05-04 Lumileds Llc Color LEDS With Integrated Optical Filtering Elements
JP2021179495A (ja) 2020-05-12 2021-11-18 セイコーエプソン株式会社 電気光学装置および電子機器
JP2021179492A (ja) * 2020-05-12 2021-11-18 セイコーエプソン株式会社 電気光学装置および電子機器
KR102871447B1 (ko) 2020-05-25 2025-10-14 삼성전자주식회사 발광 소자를 포함하는 광원 모듈
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
US11738505B2 (en) * 2020-10-29 2023-08-29 Seurat Technologies, Inc. Large area arrayed light valves
US11631786B2 (en) * 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
US20220181516A1 (en) * 2020-12-04 2022-06-09 Seoul Viosys Co., Ltd. Mixed color light emitting device
KR20220083939A (ko) * 2020-12-11 2022-06-21 삼성디스플레이 주식회사 발광 소자, 발광 소자의 제조 방법, 및 이를 포함하는 표시 장치
US11469345B2 (en) * 2021-01-21 2022-10-11 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
CN120018669A (zh) * 2021-03-10 2025-05-16 京东方科技集团股份有限公司 阵列基板、发光基板和显示装置
WO2022265283A1 (ko) * 2021-06-18 2022-12-22 조대성 발광 디바이스 및 이를 이용한 발광 모듈
CN113990997A (zh) * 2021-10-09 2022-01-28 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法
TWI774600B (zh) * 2021-11-02 2022-08-11 國立陽明交通大學 微發光二極體陣列裝置的製法及其製品
CN114093905A (zh) * 2021-11-18 2022-02-25 安徽熙泰智能科技有限公司 一种叠层Micro LED全彩显示器件及其制备方法
CN116979000A (zh) * 2021-11-23 2023-10-31 厦门市三安光电科技有限公司 一种发光二极管芯片及发光装置
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US12062746B2 (en) * 2022-01-18 2024-08-13 Excellence Opto. Inc. Small-sized vertical light emitting diode chip with high energy efficiency
KR102599275B1 (ko) * 2022-01-25 2023-11-07 주식회사 썬다이오드코리아 수직 적층 구조를 가지는 마이크로 디스플레이의 화소
US12155010B2 (en) * 2022-02-15 2024-11-26 Excellence Opto. Inc. Small-size vertical-type light emitting diode chip with high luminous in central region
US20230369304A1 (en) * 2022-05-11 2023-11-16 Seoul Viosys Co., Ltd. Pixel device and display apparatus having the same
KR102676345B1 (ko) * 2022-06-07 2024-06-18 한국광기술원 Tco 투명 접합을 이용한 다중 접합 다이오드 제조 방법
US20230420599A1 (en) * 2022-06-24 2023-12-28 Lumileds Llc High flux led with low operating voltage utilizing two p-n junctions connected in parallel and having one tunnel junction
TWI819712B (zh) * 2022-07-18 2023-10-21 友達光電股份有限公司 微型發光二極體顯示裝置
US20240113150A1 (en) * 2022-09-30 2024-04-04 Seoul Viosys Co., Ltd. Light emitting device and light emitting module having the same
CN115274945B (zh) * 2022-09-30 2022-12-23 江西兆驰半导体有限公司 一种Micro-LED芯片封装方法
TWI819863B (zh) * 2022-10-26 2023-10-21 友達光電股份有限公司 顯示面板
KR20250130190A (ko) * 2022-12-23 2025-09-01 제이드 버드 디스플레이(상하이) 리미티드 마이크로 led 구조 및 풀 컬러 마이크로 led 패널
KR102784965B1 (ko) * 2023-02-09 2025-03-25 한국광기술원 픽셀화된 미세 led 램프 및 그의 제조방법
CN119013793A (zh) * 2023-03-20 2024-11-22 京东方科技集团股份有限公司 发光二极管及制备方法、发光基板、背光模组和显示装置
WO2024206354A1 (en) * 2023-03-29 2024-10-03 Vixar, Inc. Multi wavelength diode device
CN116564947A (zh) * 2023-07-07 2023-08-08 南昌凯捷半导体科技有限公司 一种纵列全彩显示Micro-LED芯片及其制作方法
KR102852314B1 (ko) * 2023-11-07 2025-08-29 한국광기술원 다중 직렬 접합구조를 가져 광 특성을 향상시킨 질화갈륨 발광다이오드 및 그의 제조방법
DE102023132870A1 (de) * 2023-11-24 2025-05-28 Ams-Osram International Gmbh Optoelektronisches bauelement und verfahren
WO2025179513A1 (zh) * 2024-02-29 2025-09-04 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置
EP4626188A1 (en) * 2024-03-27 2025-10-01 Nichia Corporation Light source, light-emitting module, and mobile terminal

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01231380A (ja) * 1988-03-11 1989-09-14 Shin Etsu Handotai Co Ltd 混色発光半導体素子
JPH0613655A (ja) * 1992-04-17 1994-01-21 Sharp Corp 半導体発光素子および半導体表示装置
JPH08213657A (ja) * 1994-10-24 1996-08-20 Mitsubishi Electric Corp 可視光ｌｅｄ装置，及びその製造方法
JPH10503878A (ja) * 1994-12-13 1998-04-07 ザ トラスティーズ オブ プリンストン ユニバーシティ 多色オーガニック発光素子
US20030047742A1 (en) * 2001-09-11 2003-03-13 Hen Chang Hsiu Package structure of full color LED form by overlap cascaded die bonding
CN1423345A (zh) * 2001-12-07 2003-06-11 张修恒 叠置晶片全彩色发光二极管的封装结构及方法
JP2003197968A (ja) * 2001-12-18 2003-07-11 Shuko Cho 透明導電層及び反射層で直接結合されたチップの積み重ねによるフルカラー発光ダイオード光源のパッケージ構造
US20030168989A1 (en) * 2002-03-05 2003-09-11 Hen Chang Hsiu Package socket and package legs structure for led and manufacturing of the same
JP2008263127A (ja) * 2007-04-13 2008-10-30 Toshiba Corp Ｌｅｄ装置
JP2012504856A (ja) * 2008-10-03 2012-02-23 ヴァーシテック・リミテッド 半導体カラー調節可能広帯域光源及びフルカラーマイクロディスプレイ
JP2014120774A (ja) * 2012-12-18 2014-06-30 Seoul Viosys Co Ltd 高効率発光ダイオード
JP2015501085A (ja) * 2011-12-22 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 表示装置および表示装置の製造方法
JP2015185548A (ja) * 2014-03-20 2015-10-22 豊田合成株式会社 半導体発光素子とその製造方法および発光装置
JP2016521004A (ja) * 2013-04-24 2016-07-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップ及びオプトエレクトロニクス半導体部品

Family Cites Families (228)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613655Y2 (ja) 1987-09-04 1994-04-13 三菱農機株式会社 作業車輌におけるレバー装置
US5268590A (en) * 1989-12-27 1993-12-07 Motorola, Inc. CMOS device and process
JPH07254732A (ja) 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JP3620877B2 (ja) 1994-09-16 2005-02-16 豊田合成株式会社 ３族窒化物半導体平面発光素子
JPH0884407A (ja) 1994-09-12 1996-03-26 Nissin Electric Co Ltd スイッチギヤの扉開閉装置
FR2726126A1 (fr) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp Procede de fabrication de dispositifs a diodes electroluminescentes a lumiere visible
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
JPH08274376A (ja) 1995-03-15 1996-10-18 Texas Instr Inc <Ti> シリコンに格子整合したｉｉｉ−ｖ化合物半導体エミッター
US5583349A (en) 1995-11-02 1996-12-10 Motorola Full color light emitting diode display
US5583350A (en) 1995-11-02 1996-12-10 Motorola Full color light emitting diode display assembly
US6046543A (en) 1996-12-23 2000-04-04 The Trustees Of Princeton University High reliability, high efficiency, integratable organic light emitting devices and methods of producing same
KR100298205B1 (ko) 1998-05-21 2001-08-07 오길록 고집적삼색발광소자및그제조방법
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6853411B2 (en) 2001-02-20 2005-02-08 Eastman Kodak Company Light-producing high aperture ratio display having aligned tiles
JP3643328B2 (ja) 2001-08-21 2005-04-27 ファナック株式会社 ２次元ｌｄアレイ発光装置
US6888305B2 (en) 2001-11-06 2005-05-03 Universal Display Corporation Encapsulation structure that acts as a multilayer mirror
TW567618B (en) * 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
AU2003252359A1 (en) 2002-08-01 2004-02-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
US6717358B1 (en) 2002-10-09 2004-04-06 Eastman Kodak Company Cascaded organic electroluminescent devices with improved voltage stability
TWI246240B (en) 2003-03-11 2005-12-21 Pioneer Corp Multi-wavelength semiconductor laser device and manufacturing method thereof
EP1482566A3 (en) 2003-05-28 2004-12-08 Chang Hsiu Hen Light emitting diode electrode structure and full color light emitting diode formed by overlap cascaded die bonding
JP4699681B2 (ja) 2003-06-27 2011-06-15 パナソニック株式会社 Ｌｅｄモジュール、および照明装置
JP2005072323A (ja) 2003-08-26 2005-03-17 Oki Data Corp 半導体装置
CN1275337C (zh) 2003-09-17 2006-09-13 北京工大智源科技发展有限公司 高效高亮度多有源区隧道再生白光发光二极管
TWI223460B (en) 2003-09-23 2004-11-01 United Epitaxy Co Ltd Light emitting diodes in series connection and method of making the same
US8097924B2 (en) * 2003-10-31 2012-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-shallow junction MOSFET having a high-k gate dielectric and in-situ doped selective epitaxy source/drain extensions and a method of making same
JP2005190768A (ja) 2003-12-25 2005-07-14 Toyota Industries Corp 照明装置
ATE433132T1 (de) 2004-02-09 2009-06-15 Toyota Ind Corp Transflektive anzeige mit einer farbigen oled- rückbeleuchtung
WO2005094130A1 (ja) 2004-03-26 2005-10-06 Matsushita Electric Works, Ltd. 有機発光素子
US7419912B2 (en) 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US7528810B2 (en) 2004-05-25 2009-05-05 Victor Company Of Japan, Limited Display with multiple emission layers
US7271420B2 (en) 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
US20070170444A1 (en) * 2004-07-07 2007-07-26 Cao Group, Inc. Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same
US20080128728A1 (en) 2004-09-10 2008-06-05 Luminus Devices, Inc. Polarized light-emitting devices and methods
US8017955B2 (en) 2004-11-19 2011-09-13 Koninklijke Philips Electronics N.V. Composite LED modules
KR100665120B1 (ko) 2005-02-28 2007-01-09 삼성전기주식회사 수직구조 질화물 반도체 발광소자
WO2006100711A1 (ja) 2005-03-18 2006-09-28 Fujitsu Limited 表示装置およびその製造方法
JP4636501B2 (ja) * 2005-05-12 2011-02-23 株式会社沖データ 半導体装置、プリントヘッド及び画像形成装置
KR100691177B1 (ko) 2005-05-31 2007-03-09 삼성전기주식회사 백색 발광소자
JP4802556B2 (ja) 2005-06-06 2011-10-26 ソニー株式会社 チップ状電子部品の製造方法
KR100672535B1 (ko) 2005-07-25 2007-01-24 엘지전자 주식회사 유기 ｅｌ 소자 및 그 제조방법
JP4869661B2 (ja) 2005-08-23 2012-02-08 株式会社Ｊｖｃケンウッド 表示装置
JP2007095844A (ja) 2005-09-27 2007-04-12 Oki Data Corp 半導体発光複合装置
EP1935038B1 (en) * 2005-09-30 2017-07-26 Seoul Viosys Co., Ltd Light emitting device having vertically stacked light emitting diodes
JP2007114278A (ja) 2005-10-18 2007-05-10 Fuji Xerox Co Ltd 光アドレス型空間光変調素子の駆動方法、および光アドレス型空間光変調素子駆動装置
EP1974590B1 (en) 2006-01-18 2020-03-04 LG Display Co., Ltd. Oled having stacked organic light-emitting units
US7737451B2 (en) 2006-02-23 2010-06-15 Cree, Inc. High efficiency LED with tunnel junction layer
US20070222922A1 (en) 2006-03-22 2007-09-27 Eastman Kodak Company Graded contrast enhancing layer for use in displays
CN101123252B (zh) * 2006-08-10 2011-03-16 松下电器产业株式会社 半导体装置及其制造方法
US9070759B2 (en) * 2006-09-25 2015-06-30 Infineon Technologies Ag Semiconductor device and method of making same
US7808013B2 (en) 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
JP5030742B2 (ja) 2006-11-30 2012-09-19 株式会社半導体エネルギー研究所 発光素子
KR20080054626A (ko) 2006-12-13 2008-06-18 엘지디스플레이 주식회사 유기 전계발광표시소자 및 그 제조방법
KR20080061766A (ko) 2006-12-28 2008-07-03 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
EP3848970A1 (en) 2007-01-22 2021-07-14 Cree, Inc. Multiple light emitting diode emitter
NO20070425L (no) 2007-01-23 2008-07-24 Tom Jensen Anordning og fremgangsmate for bruk av mikrokraftverk
JP2010525555A (ja) 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
US7521330B2 (en) * 2007-06-04 2009-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming capacitor structures
US20080308819A1 (en) 2007-06-15 2008-12-18 Tpo Displays Corp. Light-Emitting Diode Arrays and Methods of Manufacture
US7687812B2 (en) 2007-06-15 2010-03-30 Tpo Displays Corp. Light-emitting diode arrays and methods of manufacture
US9136498B2 (en) 2007-06-27 2015-09-15 Qd Vision, Inc. Apparatus and method for modulating photon output of a quantum dot light emitting device
DE102007030129A1 (de) 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
US8058663B2 (en) 2007-09-26 2011-11-15 Iii-N Technology, Inc. Micro-emitter array based full-color micro-display
US8022421B2 (en) * 2007-11-06 2011-09-20 Industrial Technology Institute Light emitting module having LED pixels and method of forming the same
US7732803B2 (en) 2008-05-01 2010-06-08 Bridgelux, Inc. Light emitting device having stacked multiple LEDS
KR100937866B1 (ko) 2008-05-15 2010-01-21 삼성모바일디스플레이주식회사 유기발광 표시장치
KR101458958B1 (ko) 2008-06-10 2014-11-13 삼성전자주식회사 반도체 칩, 반도체 패키지 및 반도체 칩의 제조 방법
JP2009302201A (ja) 2008-06-11 2009-12-24 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
DE102008030584A1 (de) 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
KR101332794B1 (ko) 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
TW201014452A (en) 2008-08-19 2010-04-01 Plextronics Inc Organic light emitting diode lighting devices
US8519424B2 (en) 2008-08-19 2013-08-27 Plextronics, Inc. User configurable mosaic light emitting apparatus
JP2010052555A (ja) 2008-08-27 2010-03-11 Kanzaki Kokyukoki Mfg Co Ltd 車軸駆動装置
JP5097057B2 (ja) 2008-08-29 2012-12-12 株式会社沖データ 表示装置
JP4555880B2 (ja) 2008-09-04 2010-10-06 株式会社沖データ 積層半導体発光装置及び画像形成装置
JP5024247B2 (ja) 2008-09-12 2012-09-12 日立電線株式会社 発光素子
US7977872B2 (en) 2008-09-16 2011-07-12 Global Oled Technology Llc High-color-temperature tandem white OLED
EP2357679B1 (en) 2008-11-14 2018-08-29 Samsung Electronics Co., Ltd. Vertical/horizontal light-emitting diode for semiconductor
US9184410B2 (en) 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
TWI446498B (zh) 2009-03-13 2014-07-21 泰斯拉公司 具有延伸穿越銲墊之通孔的堆疊微電子總成
US8946204B2 (en) 2009-05-07 2015-02-03 Gruenenthal Gmbh Substituted phenylureas and phenylamides as vanilloid receptor ligands
US9485919B2 (en) 2009-08-07 2016-11-08 Showa Denko K.K. Multicolor light emitting diode lamp for plant growth, illumination apparatus, and plant growth method
KR101077789B1 (ko) 2009-08-07 2011-10-28 한국과학기술원 Ｌｅｄ 디스플레이 제조 방법 및 이에 의하여 제조된 ｌｅｄ 디스플레이
EP2504675A4 (en) 2009-11-24 2016-08-17 Univ Florida METHOD AND DEVICE FOR DETECTING AN INFRARED RADIATION
US8642363B2 (en) 2009-12-09 2014-02-04 Nano And Advanced Materials Institute Limited Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
US9236532B2 (en) 2009-12-14 2016-01-12 Seoul Viosys Co., Ltd. Light emitting diode having electrode pads
JP5443286B2 (ja) 2009-12-24 2014-03-19 スタンレー電気株式会社 フェイスアップ型光半導体装置
KR101631652B1 (ko) 2009-12-29 2016-06-20 삼성전자주식회사 광민감성 투명 산화물 반도체 재료를 이용한 이미지 센서
JP2011159674A (ja) 2010-01-29 2011-08-18 Fujitsu Ltd 温度解析プログラム、温度解析装置及び温度解析方法
JP2011159671A (ja) 2010-01-29 2011-08-18 Oki Data Corp 半導体発光装置および画像表示装置
US20110204376A1 (en) 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
EP2366753B1 (en) 2010-03-02 2015-06-17 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element and Lighting Device
DE102010002966B4 (de) 2010-03-17 2020-07-30 Osram Opto Semiconductors Gmbh Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung
WO2011125090A1 (ja) 2010-04-02 2011-10-13 株式会社 日立製作所 有機発光装置およびこれを用いた光源装置
CN102859726B (zh) * 2010-04-06 2015-09-16 首尔伟傲世有限公司 发光二极管及其制造方法
JP5725927B2 (ja) * 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 高効率発光ダイオード及びその製造方法
KR101252032B1 (ko) 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
JP5333382B2 (ja) 2010-08-27 2013-11-06 豊田合成株式会社 発光素子
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US9941319B2 (en) 2010-10-13 2018-04-10 Monolithic 3D Inc. Semiconductor and optoelectronic methods and devices
US8283215B2 (en) 2010-10-13 2012-10-09 Monolithic 3D Inc. Semiconductor and optoelectronic devices
KR20120040011A (ko) 2010-10-18 2012-04-26 한국전자통신연구원 발광 다이오드
JP5777879B2 (ja) 2010-12-27 2015-09-09 ローム株式会社 発光素子、発光素子ユニットおよび発光素子パッケージ
CN102593303A (zh) 2011-01-05 2012-07-18 晶元光电股份有限公司 具有栓塞的发光元件
US20120236532A1 (en) 2011-03-14 2012-09-20 Koo Won-Hoe Led engine for illumination
JP5854419B2 (ja) 2011-03-18 2016-02-09 国立大学法人山口大学 多波長発光素子及びその製造方法
FR2964498A1 (fr) 2011-03-21 2012-03-09 Soitec Silicon On Insulator Empilement de led de couleur
US8802461B2 (en) * 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
CN105309047B (zh) 2011-03-23 2017-05-17 株式会社半导体能源研究所 发光装置以及照明装置
JP5095840B2 (ja) 2011-04-26 2012-12-12 株式会社東芝 半導体発光素子
WO2012147759A1 (ja) 2011-04-27 2012-11-01 Ｊｘ日鉱日石エネルギー株式会社 有機ｅｌ素子用の光取出し透明基板及びそれを用いた有機ｅｌ素子
TW201248945A (en) 2011-05-31 2012-12-01 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
US8884316B2 (en) 2011-06-17 2014-11-11 Universal Display Corporation Non-common capping layer on an organic device
US9309223B2 (en) 2011-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Heterocyclic compound, light-emitting element, light-emitting device, electronic device, and lighting device
US9129856B2 (en) * 2011-07-08 2015-09-08 Broadcom Corporation Method for efficiently fabricating memory cells with logic FETs and related structure
JP2013070030A (ja) 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置
US9070613B2 (en) 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
DE102011116232B4 (de) 2011-10-17 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
KR101902392B1 (ko) 2011-10-26 2018-10-01 엘지이노텍 주식회사 발광 소자
CN102593290B (zh) 2012-01-18 2014-08-13 鄂尔多斯市荣泰光电科技有限责任公司 白光led外延片及其制作工艺以及白光led芯片的制作方法
KR20130104612A (ko) 2012-03-14 2013-09-25 서울바이오시스 주식회사 발광 다이오드 및 그것을 제조하는 방법
US20130264587A1 (en) 2012-04-04 2013-10-10 Phostek, Inc. Stacked led device using oxide bonding
US8835948B2 (en) * 2012-04-19 2014-09-16 Phostek, Inc. Stacked LED device with diagonal bonding pads
JP5888096B2 (ja) 2012-04-26 2016-03-16 コニカミノルタ株式会社 表示装置
TW201344955A (zh) 2012-04-27 2013-11-01 華夏光股份有限公司 發光二極體裝置
US9257665B2 (en) 2012-09-14 2016-02-09 Universal Display Corporation Lifetime OLED display
DE102012108763B4 (de) 2012-09-18 2023-02-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip und lichtquelle mit dem optoelektronischen halbleiterchip
US8946052B2 (en) 2012-09-26 2015-02-03 Sandia Corporation Processes for multi-layer devices utilizing layer transfer
DE102013112602B4 (de) 2012-12-18 2020-11-12 Lg Display Co., Ltd. Weiße organische Lichtemissionsvorrichtung
US20140184062A1 (en) * 2012-12-27 2014-07-03 GE Lighting Solutions, LLC Systems and methods for a light emitting diode chip
US20140191243A1 (en) 2013-01-08 2014-07-10 University Of Florida Research Foundation, Inc. Patterned articles and light emitting devices therefrom
US9443833B2 (en) 2013-01-31 2016-09-13 Nthdegree Technologies Worldwide Inc. Transparent overlapping LED die layers
JP2014175427A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
TW201438188A (zh) 2013-03-25 2014-10-01 美祿科技股份有限公司 堆疊式發光二極體陣列結構
US9748313B2 (en) 2013-05-17 2017-08-29 Panasonic Intellectual Property Management Co., Ltd. Organic electroluminescent element
KR101716701B1 (ko) 2013-05-17 2017-03-15 파나소닉 아이피 매니지먼트 가부시키가이샤 유기 전계 발광 소자 및 조명 장치
JP2015012044A (ja) 2013-06-26 2015-01-19 株式会社東芝 半導体発光素子
KR102050461B1 (ko) 2013-06-28 2019-11-29 엘지디스플레이 주식회사 유기 발광 소자
JP2015012244A (ja) 2013-07-01 2015-01-19 株式会社東芝 半導体発光素子
TWI790559B (zh) 2013-08-09 2023-01-21 日商半導體能源研究所股份有限公司 發光元件、顯示模組、照明模組、發光裝置、顯示裝置、電子裝置、及照明裝置
DE102013109451B9 (de) 2013-08-30 2017-07-13 Osram Oled Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
US10388978B2 (en) 2013-11-15 2019-08-20 Lockheed Martin Energy, Llc Methods for determining state of charge and calibrating reference electrodes in a redox flow battery
JP6497647B2 (ja) 2013-12-24 2019-04-10 パナソニックＩｐマネジメント株式会社 表示装置及び表示装置の製造方法
KR101452801B1 (ko) 2014-03-25 2014-10-22 광주과학기술원 발광다이오드 및 이의 제조방법
WO2015150976A1 (en) 2014-04-03 2015-10-08 Strato Scale Ltd. Cluster-wide memory management using similarity-preserving signatures
KR20150121306A (ko) 2014-04-18 2015-10-29 포항공과대학교 산학협력단 질화물 반도체 발광소자 및 이의 제조방법
KR20150131522A (ko) 2014-05-15 2015-11-25 엘지디스플레이 주식회사 유기 발광 표시 소자 디스플레이 패널
US9831387B2 (en) 2014-06-14 2017-11-28 Hiphoton Co., Ltd. Light engine array
JP2016027361A (ja) 2014-07-01 2016-02-18 株式会社リコー エレクトロクロミック表示装置およびその製造方法、駆動方法
GB201413578D0 (en) 2014-07-31 2014-09-17 Infiniled Ltd A colour iled display on silicon
JP6351520B2 (ja) 2014-08-07 2018-07-04 株式会社東芝 半導体発光素子
JP6413460B2 (ja) 2014-08-08 2018-10-31 日亜化学工業株式会社 発光装置及び発光装置の製造方法
KR20160027875A (ko) 2014-08-28 2016-03-10 서울바이오시스 주식회사 발광소자
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
KR101888608B1 (ko) 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
US9847051B2 (en) 2014-11-04 2017-12-19 Apple Inc. Organic light-emitting diode display with minimized subpixel crosstalk
US9508891B2 (en) * 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
US9698134B2 (en) 2014-11-27 2017-07-04 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
US20160163940A1 (en) 2014-12-05 2016-06-09 Industrial Technology Research Institute Package structure for light emitting device
KR102322841B1 (ko) * 2014-12-24 2021-11-08 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 어레이
KR102402260B1 (ko) 2015-01-08 2022-05-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
CN107408364B (zh) 2015-03-20 2020-06-30 索尼半导体解决方案公司 显示装置、照明装置、发光元件以及半导体装置
KR102038443B1 (ko) 2015-03-26 2019-10-30 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR102434778B1 (ko) 2015-03-26 2022-08-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
KR101771461B1 (ko) 2015-04-24 2017-08-25 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
JP6637674B2 (ja) 2015-04-30 2020-01-29 信越化学工業株式会社 プリント配線板、プリント配線板の製造方法、及び半導体装置
CN104952995B (zh) 2015-05-05 2017-08-25 湘能华磊光电股份有限公司 一种iii族半导体发光器件的倒装结构
US20160336482A1 (en) 2015-05-12 2016-11-17 Epistar Corporation Light-emitting device
DE102015108532A1 (de) 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte
DE102015108545A1 (de) 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2016225221A (ja) 2015-06-02 2016-12-28 コニカミノルタ株式会社 電界発光素子
JP2017011202A (ja) 2015-06-25 2017-01-12 京セラ株式会社 発光装置
TWI577042B (zh) 2015-07-15 2017-04-01 南臺科技大學 發光二極體晶片及數據發射及接收裝置
EP3325964A1 (en) 2015-07-17 2018-05-30 Lawrence M. Boyd Apparatus and method for sorting of cells
US9685457B2 (en) * 2015-07-22 2017-06-20 Globalfoundries Inc. Method including a formation of a transistor and semiconductor structure including a first transistor and a second transistor
CN107924968B (zh) 2015-08-18 2022-08-23 苏州立琻半导体有限公司 发光元件、包括发光元件的发光元件封装和包括发光元件封装的发光装置
KR102415331B1 (ko) 2015-08-26 2022-06-30 삼성전자주식회사 발광 소자 패키지, 및 이를 포함하는 장치
US9722076B2 (en) * 2015-08-29 2017-08-01 Taiwan Semiconductor Manufacturning Co., Ltd. Method for manufacturing semiconductor device with contamination improvement
KR102443035B1 (ko) 2015-09-02 2022-09-16 삼성전자주식회사 Led 구동 장치 및 그를 포함하는 조명 장치
US10304811B2 (en) 2015-09-04 2019-05-28 Hong Kong Beida Jade Bird Display Limited Light-emitting diode display panel with micro lens array
US10032757B2 (en) 2015-09-04 2018-07-24 Hong Kong Beida Jade Bird Display Limited Projection display system
US9966501B2 (en) * 2015-09-07 2018-05-08 Seoul Viosys Co., Ltd. Light emitting device with high efficiency
KR102460072B1 (ko) 2015-09-10 2022-10-31 삼성전자주식회사 반도체 발광 소자
KR102406606B1 (ko) 2015-10-08 2022-06-09 삼성디스플레이 주식회사 유기 발광 소자, 이를 포함하는 유기 발광 표시 장치, 및 이의 제조 방법
KR101739851B1 (ko) 2015-10-30 2017-05-25 주식회사 썬다이오드코리아 파장변환구조체를 포함하는 발광 소자
US10304813B2 (en) 2015-11-05 2019-05-28 Innolux Corporation Display device having a plurality of bank structures
KR102546307B1 (ko) 2015-12-02 2023-06-21 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
KR20170082187A (ko) 2016-01-05 2017-07-14 삼성전자주식회사 백색 발광장치 및 디스플레이 장치
TWI581455B (zh) 2016-01-29 2017-05-01 友達光電股份有限公司 發光裝置及發光裝置之製造方法
KR102524805B1 (ko) 2016-02-12 2023-04-25 삼성전자주식회사 광원 모듈, 디스플레이 패널 및 이를 구비한 디스플레이 장치
WO2017145026A1 (en) 2016-02-23 2017-08-31 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
KR102328852B1 (ko) 2016-02-24 2021-11-22 삼성디스플레이 주식회사 유기발광소자
WO2017146477A1 (ko) 2016-02-26 2017-08-31 서울반도체주식회사 디스플레이 장치 및 그의 제조 방법
DE102016104280A1 (de) 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
KR20170108321A (ko) 2016-03-17 2017-09-27 주식회사 루멘스 발광 다이오드
KR102517336B1 (ko) 2016-03-29 2023-04-04 삼성전자주식회사 디스플레이 패널 및 이를 구비한 멀티비전 장치
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
KR102513080B1 (ko) 2016-04-04 2023-03-24 삼성전자주식회사 Led 광원 모듈 및 디스플레이 장치
CN105789237A (zh) 2016-04-25 2016-07-20 京东方科技集团股份有限公司 Led显示模组、显示装置及显示模组的制作方法
JP6683003B2 (ja) 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
KR20170129983A (ko) 2016-05-17 2017-11-28 삼성전자주식회사 발광소자 패키지, 이를 이용한 디스플레이 장치 및 그 제조방법
US10388691B2 (en) 2016-05-18 2019-08-20 Globalfoundries Inc. Light emitting diodes (LEDs) with stacked multi-color pixels for displays
CN107437551B (zh) 2016-05-25 2020-03-24 群创光电股份有限公司 显示装置及其制造方法
EP3297044A1 (en) 2016-09-19 2018-03-21 Nick Shepherd Improved led emitter, led emitter array and method for manufacturing the same
TWI584491B (zh) * 2016-11-03 2017-05-21 友達光電股份有限公司 發光裝置與其製作方法
CN106449659B (zh) 2016-11-11 2019-06-07 京东方科技集团股份有限公司 阵列基板及其制造方法、显示器
KR102642304B1 (ko) 2016-11-28 2024-02-28 삼성전자주식회사 광전자 소자 및 전자 장치
US11287563B2 (en) 2016-12-01 2022-03-29 Ostendo Technologies, Inc. Polarized light emission from micro-pixel displays and methods of fabrication thereof
US10400958B2 (en) 2016-12-30 2019-09-03 Lumileds Llc Addressable color changeable LED structure
CN106898601A (zh) 2017-02-15 2017-06-27 佛山市国星光电股份有限公司 三角形组合的led线路板、三角形led器件及显示屏
WO2018156876A1 (en) 2017-02-24 2018-08-30 Kim, Jeehwan Methods and apparatus for vertically stacked multicolor light-emitting diode (led) display
CN106848043A (zh) 2017-03-28 2017-06-13 光创空间（深圳）技术有限公司 一种led器件的封装方法及led器件
TWI699496B (zh) 2017-03-31 2020-07-21 億光電子工業股份有限公司 發光裝置和照明模組
TWI613806B (zh) 2017-05-16 2018-02-01 錼創科技股份有限公司 微型發光二極體裝置及顯示面板
KR20190001050A (ko) 2017-06-26 2019-01-04 주식회사 루멘스 칩 적층 구조를 갖는 led 픽셀 소자
KR102503578B1 (ko) 2017-06-30 2023-02-24 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
CN109216329B (zh) 2017-07-07 2020-09-08 鸿富锦精密工业（深圳）有限公司 微型led显示面板及其制备方法
KR102476136B1 (ko) 2017-09-05 2022-12-09 삼성전자주식회사 Led를 이용한 디스플레이 장치
CN109801965B (zh) * 2017-11-17 2022-06-14 联华电子股份有限公司 具有双层间隙壁的晶体管及其形成方法
US11282981B2 (en) 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
KR102509639B1 (ko) 2017-12-12 2023-03-15 삼성전자주식회사 발광소자 패키지 제조방법
WO2019147738A1 (en) 2018-01-23 2019-08-01 Light Share, LLC Full-color monolithic micro-led pixels
JP7115037B2 (ja) * 2018-05-25 2022-08-09 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置
US11508876B2 (en) 2018-12-31 2022-11-22 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
CN110259303A (zh) 2019-06-18 2019-09-20 浙江吉利控股集团有限公司 一种防疲劳损伤主动式铰链系统

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01231380A (ja) * 1988-03-11 1989-09-14 Shin Etsu Handotai Co Ltd 混色発光半導体素子
JPH0613655A (ja) * 1992-04-17 1994-01-21 Sharp Corp 半導体発光素子および半導体表示装置
JPH08213657A (ja) * 1994-10-24 1996-08-20 Mitsubishi Electric Corp 可視光ｌｅｄ装置，及びその製造方法
JPH10503878A (ja) * 1994-12-13 1998-04-07 ザ トラスティーズ オブ プリンストン ユニバーシティ 多色オーガニック発光素子
US20030047742A1 (en) * 2001-09-11 2003-03-13 Hen Chang Hsiu Package structure of full color LED form by overlap cascaded die bonding
CN1423345A (zh) * 2001-12-07 2003-06-11 张修恒 叠置晶片全彩色发光二极管的封装结构及方法
JP2003197968A (ja) * 2001-12-18 2003-07-11 Shuko Cho 透明導電層及び反射層で直接結合されたチップの積み重ねによるフルカラー発光ダイオード光源のパッケージ構造
US20030168989A1 (en) * 2002-03-05 2003-09-11 Hen Chang Hsiu Package socket and package legs structure for led and manufacturing of the same
JP2008263127A (ja) * 2007-04-13 2008-10-30 Toshiba Corp Ｌｅｄ装置
JP2012504856A (ja) * 2008-10-03 2012-02-23 ヴァーシテック・リミテッド 半導体カラー調節可能広帯域光源及びフルカラーマイクロディスプレイ
JP2015501085A (ja) * 2011-12-22 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 表示装置および表示装置の製造方法
JP2014120774A (ja) * 2012-12-18 2014-06-30 Seoul Viosys Co Ltd 高効率発光ダイオード
JP2016521004A (ja) * 2013-04-24 2016-07-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップ及びオプトエレクトロニクス半導体部品
JP2015185548A (ja) * 2014-03-20 2015-10-22 豊田合成株式会社 半導体発光素子とその製造方法および発光装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023076104A (ja) * 2021-11-22 2023-06-01 日亜化学工業株式会社 発光素子
JP7397348B2 (ja) 2021-11-22 2023-12-13 日亜化学工業株式会社 発光素子
JP2025520535A (ja) * 2022-06-24 2025-07-03 ルミレッズ リミテッド ライアビリティ カンパニー カラー調整可能な画素の小型アレイ
WO2025033475A1 (ja) * 2023-08-10 2025-02-13 Ｄｏｗａエレクトロニクス株式会社 光半導体素子およびその製造方法
JP2025026175A (ja) * 2023-08-10 2025-02-21 Ｄｏｗａエレクトロニクス株式会社 光半導体素子およびその製造方法
JP7695975B2 (ja) 2023-08-10 2025-06-19 Ｄｏｗａエレクトロニクス株式会社 光半導体素子およびその製造方法

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