JP2018516465A5 - - Google Patents

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Publication number
JP2018516465A5
JP2018516465A5 JP2017562997A JP2017562997A JP2018516465A5 JP 2018516465 A5 JP2018516465 A5 JP 2018516465A5 JP 2017562997 A JP2017562997 A JP 2017562997A JP 2017562997 A JP2017562997 A JP 2017562997A JP 2018516465 A5 JP2018516465 A5 JP 2018516465A5
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JP
Japan
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metal layer
gas
substrate
feature
layer
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JP2017562997A
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Japanese (ja)
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JP2018516465A (ja
JP7066929B2 (ja
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Priority claimed from PCT/US2016/035724 external-priority patent/WO2016196937A1/en
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Publication of JP2018516465A5 publication Critical patent/JP2018516465A5/ja
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JP2017562997A 2015-06-05 2016-06-03 インターコネクトのためのルテニウムメタルによるフィーチャ充填 Active JP7066929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562171739P 2015-06-05 2015-06-05
US62/171,739 2015-06-05
PCT/US2016/035724 WO2016196937A1 (en) 2015-06-05 2016-06-03 Ruthenium metal feature fill for interconnects

Publications (3)

Publication Number Publication Date
JP2018516465A JP2018516465A (ja) 2018-06-21
JP2018516465A5 true JP2018516465A5 (enExample) 2019-07-04
JP7066929B2 JP7066929B2 (ja) 2022-05-16

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JP2017562997A Active JP7066929B2 (ja) 2015-06-05 2016-06-03 インターコネクトのためのルテニウムメタルによるフィーチャ充填

Country Status (6)

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US (2) US9711449B2 (enExample)
JP (1) JP7066929B2 (enExample)
KR (1) KR102542758B1 (enExample)
CN (1) CN107836034B (enExample)
TW (1) TWI621161B (enExample)
WO (1) WO2016196937A1 (enExample)

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US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
JP7206355B2 (ja) * 2020-11-12 2023-01-17 アプライド マテリアルズ インコーポレイテッド ダイナミックランダムアクセスメモリビット線金属を滑らかにするための方法及び装置
US20220165852A1 (en) * 2020-11-23 2022-05-26 Applied Materials, Inc. Methods and apparatus for metal fill in metal gate stack
US20220223472A1 (en) 2021-01-11 2022-07-14 Applied Materials, Inc. Ruthenium Reflow For Via Fill
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