JP2020536395A5 - - Google Patents
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- Publication number
- JP2020536395A5 JP2020536395A5 JP2020519373A JP2020519373A JP2020536395A5 JP 2020536395 A5 JP2020536395 A5 JP 2020536395A5 JP 2020519373 A JP2020519373 A JP 2020519373A JP 2020519373 A JP2020519373 A JP 2020519373A JP 2020536395 A5 JP2020536395 A5 JP 2020536395A5
- Authority
- JP
- Japan
- Prior art keywords
- feature
- metal
- metal layer
- substrate
- additional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 32
- 229910052751 metal Inorganic materials 0.000 claims 31
- 239000002184 metal Substances 0.000 claims 31
- 239000000758 substrate Substances 0.000 claims 13
- 239000007789 gas Substances 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 8
- 238000005229 chemical vapour deposition Methods 0.000 claims 6
- 238000001312 dry etching Methods 0.000 claims 6
- 238000000231 atomic layer deposition Methods 0.000 claims 4
- 230000005284 excitation Effects 0.000 claims 4
- 230000006911 nucleation Effects 0.000 claims 4
- 238000010899 nucleation Methods 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- 229910004491 TaAlN Inorganic materials 0.000 claims 2
- 229910010037 TiAlN Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762568218P | 2017-10-04 | 2017-10-04 | |
| US62/568,218 | 2017-10-04 | ||
| PCT/US2018/053675 WO2019070545A1 (en) | 2017-10-04 | 2018-10-01 | METAL RUTHENIUM FILLING OF ELEMENTS FOR INTERCONNECTIONS |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020536395A JP2020536395A (ja) | 2020-12-10 |
| JP2020536395A5 true JP2020536395A5 (enExample) | 2021-10-21 |
| JP7277871B2 JP7277871B2 (ja) | 2023-05-19 |
Family
ID=65896222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519373A Active JP7277871B2 (ja) | 2017-10-04 | 2018-10-01 | 相互接続のためのルテニウム金属機能フィリング |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10700009B2 (enExample) |
| JP (1) | JP7277871B2 (enExample) |
| KR (1) | KR102601862B1 (enExample) |
| TW (1) | TWI827553B (enExample) |
| WO (1) | WO2019070545A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019169627A (ja) * | 2018-03-23 | 2019-10-03 | 東京エレクトロン株式会社 | エッチング方法 |
| JP7077108B2 (ja) * | 2018-04-05 | 2022-05-30 | 東京エレクトロン株式会社 | 被加工物の処理方法 |
| TWI790372B (zh) | 2018-04-09 | 2023-01-21 | 日商東京威力科創股份有限公司 | 具有用於低電容內連線之氣隙的半導體元件形成方法 |
| JP2022505218A (ja) * | 2018-10-19 | 2022-01-14 | コーニング インコーポレイテッド | ビアを備えたデバイス並びにビアを製造するための方法および材料 |
| WO2022098517A1 (en) * | 2020-11-03 | 2022-05-12 | Tokyo Electron Limited | Method for filling recessed features in semiconductor devices with a low-resistivity metal |
| JP7587418B2 (ja) * | 2020-12-28 | 2024-11-20 | 東京応化工業株式会社 | 半導体素子の製造方法、及び半導体素子の製造方法において用いられる薬液 |
| US20220301887A1 (en) * | 2021-03-16 | 2022-09-22 | Applied Materials, Inc. | Ruthenium etching process |
| US20230002888A1 (en) * | 2021-07-01 | 2023-01-05 | Applied Materials, Inc. | Method of depositing metal films |
| CN119790186A (zh) * | 2022-09-02 | 2025-04-08 | 朗姆研究公司 | 原位溅射的原子层沉积 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003031688A (ja) * | 2001-07-17 | 2003-01-31 | Toshiba Corp | 半導体装置の製造方法 |
| US7901545B2 (en) | 2004-03-26 | 2011-03-08 | Tokyo Electron Limited | Ionized physical vapor deposition (iPVD) process |
| JP2004165405A (ja) | 2002-11-13 | 2004-06-10 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
| JP2006324363A (ja) * | 2005-05-17 | 2006-11-30 | Elpida Memory Inc | キャパシタおよびその製造方法 |
| JP4505485B2 (ja) | 2007-02-28 | 2010-07-21 | 株式会社半導体理工学研究センター | 導電体の形成装置、導電体の形成方法、および半導体装置の製造方法 |
| JP2009117633A (ja) | 2007-11-07 | 2009-05-28 | Panasonic Corp | 半導体装置の製造方法 |
| JP5193913B2 (ja) * | 2009-03-12 | 2013-05-08 | 東京エレクトロン株式会社 | ＣＶＤ−Ｒｕ膜の形成方法および半導体装置の製造方法 |
| LU91572B1 (en) | 2009-05-20 | 2010-11-22 | Wurth Paul Sa | Method for operating a regenerative heater. |
| US8124531B2 (en) * | 2009-08-04 | 2012-02-28 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| WO2013047531A1 (ja) * | 2011-09-27 | 2013-04-04 | 東京エレクトロン株式会社 | プラズマエッチング方法及び半導体装置の製造方法 |
| US9406683B2 (en) * | 2014-12-04 | 2016-08-02 | International Business Machines Corporation | Wet bottling process for small diameter deep trench capacitors |
| CN107836034B (zh) * | 2015-06-05 | 2022-07-19 | 东京毅力科创株式会社 | 用于互连的钌金属特征部填充 |
-
2018
- 2018-10-01 JP JP2020519373A patent/JP7277871B2/ja active Active
- 2018-10-01 WO PCT/US2018/053675 patent/WO2019070545A1/en not_active Ceased
- 2018-10-01 US US16/147,928 patent/US10700009B2/en active Active
- 2018-10-01 KR KR1020207012049A patent/KR102601862B1/ko active Active
- 2018-10-03 TW TW107134901A patent/TWI827553B/zh active
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