KR102601862B1 - 상호접속부를 위한 루테늄 금속 피처 충전 - Google Patents

상호접속부를 위한 루테늄 금속 피처 충전 Download PDF

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KR102601862B1
KR102601862B1 KR1020207012049A KR20207012049A KR102601862B1 KR 102601862 B1 KR102601862 B1 KR 102601862B1 KR 1020207012049 A KR1020207012049 A KR 1020207012049A KR 20207012049 A KR20207012049 A KR 20207012049A KR 102601862 B1 KR102601862 B1 KR 102601862B1
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metal
feature
substrate
metal layer
layer
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KR20200051823A (ko
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카이-훙 위
니콜라스 조이
에릭 리우
데이비드 오메라
데이비드 로젠탈
마사노부 이게타
코리 바이다
게릿 뢰싱크
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]

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JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
US11251077B2 (en) * 2018-04-09 2022-02-15 Tokyo Electron Limited Method of forming a semiconductor device with air gaps for low capacitance interconnects
JP2022505218A (ja) * 2018-10-19 2022-01-14 コーニング インコーポレイテッド ビアを備えたデバイス並びにビアを製造するための方法および材料
US20220139776A1 (en) * 2020-11-03 2022-05-05 Tokyo Electron Limited Method for filling recessed features in semiconductor devices with a low-resistivity metal
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US20230002888A1 (en) * 2021-07-01 2023-01-05 Applied Materials, Inc. Method of depositing metal films
KR20250064681A (ko) * 2022-09-02 2025-05-09 램 리써치 코포레이션 인 시츄 (in situ) 스퍼터링을 사용하는 원자 층 증착

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