JP2021501987A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2021501987A5 JP2021501987A5 JP2020521989A JP2020521989A JP2021501987A5 JP 2021501987 A5 JP2021501987 A5 JP 2021501987A5 JP 2020521989 A JP2020521989 A JP 2020521989A JP 2020521989 A JP2020521989 A JP 2020521989A JP 2021501987 A5 JP2021501987 A5 JP 2021501987A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- phase change
- metal nitride
- metal electrode
- change material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 42
- 239000002184 metal Substances 0.000 claims 42
- 239000003989 dielectric material Substances 0.000 claims 29
- 238000000151 deposition Methods 0.000 claims 23
- 150000004767 nitrides Chemical class 0.000 claims 21
- 239000012782 phase change material Substances 0.000 claims 20
- 238000000034 method Methods 0.000 claims 14
- 230000008021 deposition Effects 0.000 claims 11
- 238000005530 etching Methods 0.000 claims 6
- 239000010936 titanium Substances 0.000 claims 4
- 229910000618 GeSbTe Inorganic materials 0.000 claims 3
- 238000000231 atomic layer deposition Methods 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/803,349 US10141503B1 (en) | 2017-11-03 | 2017-11-03 | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
| US15/803,349 | 2017-11-03 | ||
| PCT/IB2018/058468 WO2019087050A1 (en) | 2017-11-03 | 2018-10-30 | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021501987A JP2021501987A (ja) | 2021-01-21 |
| JP2021501987A5 true JP2021501987A5 (enExample) | 2021-04-22 |
| JP7267271B2 JP7267271B2 (ja) | 2023-05-01 |
Family
ID=64315486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521989A Active JP7267271B2 (ja) | 2017-11-03 | 2018-10-30 | 半導体デバイス製作用の高アスペクト比誘電孔における選択的相変化材料成長 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10141503B1 (enExample) |
| JP (1) | JP7267271B2 (enExample) |
| CN (1) | CN111279500B (enExample) |
| DE (1) | DE112018004630B4 (enExample) |
| GB (1) | GB2582470B (enExample) |
| WO (1) | WO2019087050A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10141503B1 (en) | 2017-11-03 | 2018-11-27 | International Business Machines Corporation | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
| US10825514B2 (en) * | 2018-04-20 | 2020-11-03 | International Business Machines Corporation | Bipolar switching operation of confined phase change memory for a multi-level cell memory |
| US11158788B2 (en) * | 2018-10-30 | 2021-10-26 | International Business Machines Corporation | Atomic layer deposition and physical vapor deposition bilayer for additive patterning |
| US11482669B2 (en) * | 2019-09-10 | 2022-10-25 | Globalfoundries Singapore Pte. Ltd. | Memory device and a method for forming the memory device |
| CN112635661B (zh) * | 2019-10-09 | 2023-08-01 | 联华电子股份有限公司 | 多位可变电阻式存储器单元及其形成方法 |
| US12279538B2 (en) * | 2019-12-19 | 2025-04-15 | Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd | Phase change memory unit and preparation method therefor |
| US11380843B2 (en) * | 2020-02-13 | 2022-07-05 | International Business Machines Corporation | Phase change memory using multiple stacks of PCM materials |
| KR102766575B1 (ko) | 2020-04-07 | 2025-02-12 | 삼성전자주식회사 | 메모리 소자 |
| US11251370B1 (en) * | 2020-08-12 | 2022-02-15 | International Business Machines Corporation | Projected memory device with carbon-based projection component |
| CN112133825A (zh) * | 2020-09-03 | 2020-12-25 | 中国科学院上海微系统与信息技术研究所 | 一种高稳定性相变存储单元及其制备方法 |
| KR20220039629A (ko) * | 2020-09-22 | 2022-03-29 | 에이에스엠 아이피 홀딩 비.브이. | 게르마늄 칼코지나이드를 포함한 층을 증착하기 위한 시스템, 소자, 및 방법 |
| US11665985B2 (en) * | 2020-11-23 | 2023-05-30 | International Business Machines Corporation | Projected memory device with reduced minimum conductance state |
| KR20220071026A (ko) | 2020-11-23 | 2022-05-31 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
| US11456413B2 (en) | 2020-11-27 | 2022-09-27 | International Business Machines Corporation | In-situ drift-mitigation liner for pillar cell PCM |
| US11456415B2 (en) | 2020-12-08 | 2022-09-27 | International Business Machines Corporation | Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner |
| US11476418B2 (en) * | 2020-12-08 | 2022-10-18 | International Business Machines Corporation | Phase change memory cell with a projection liner |
| US12150392B2 (en) * | 2020-12-22 | 2024-11-19 | International Business Machines Corporation | Transfer length phase change material (PCM) based bridge cell |
| US11545624B2 (en) | 2021-03-29 | 2023-01-03 | International Business Machines Corporation | Phase change memory cell resistive liner |
| US12245530B2 (en) | 2021-06-25 | 2025-03-04 | International Business Machines Corporation | Phase change memory with concentric ring-shaped heater |
| US12219884B2 (en) | 2021-06-25 | 2025-02-04 | International Business Machines Corporation | Phase change memory with conductive rings |
| US12408571B2 (en) | 2021-06-25 | 2025-09-02 | International Business Machines Corporation | Phase change memory with graded heater |
| US11980111B2 (en) * | 2021-09-08 | 2024-05-07 | International Business Machines Corporation | Confined bridge cell phase change memory |
| US12274185B2 (en) | 2021-10-19 | 2025-04-08 | International Business Machines Corporation | Phase change memory cell having pillar bottom electrode with improved thermal insulation |
| US12495722B2 (en) | 2021-12-06 | 2025-12-09 | International Business Machines Corporation | Suppression of void-formation of PCM materials |
| US12274186B2 (en) | 2022-06-07 | 2025-04-08 | International Business Machines Corporation | Low current phase-change memory device |
| CN115768130B (zh) * | 2022-11-28 | 2025-10-28 | 厦门半导体工业技术研发有限公司 | 一种半导体集成电路器件及其制造方法 |
| CN119008598A (zh) * | 2023-05-16 | 2024-11-22 | 台湾积体电路制造股份有限公司 | 电容器结构的制造方法 |
Family Cites Families (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4795657A (en) * | 1984-04-13 | 1989-01-03 | Energy Conversion Devices, Inc. | Method of fabricating a programmable array |
| US5814527A (en) | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
| JP2001308077A (ja) * | 2000-04-27 | 2001-11-02 | Toshiba Corp | 半導体製造装置 |
| US6511867B2 (en) | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Utilizing atomic layer deposition for programmable device |
| JP4434527B2 (ja) * | 2001-08-08 | 2010-03-17 | 株式会社東芝 | 半導体記憶装置 |
| US6885573B2 (en) * | 2002-03-15 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Diode for use in MRAM devices and method of manufacture |
| US6855975B2 (en) * | 2002-04-10 | 2005-02-15 | Micron Technology, Inc. | Thin film diode integrated with chalcogenide memory cell |
| US6937509B2 (en) * | 2003-09-08 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Data storage device and method of forming the same |
| US7042757B2 (en) * | 2004-03-04 | 2006-05-09 | Hewlett-Packard Development Company, L.P. | 1R1D MRAM block architecture |
| KR100687750B1 (ko) * | 2005-09-07 | 2007-02-27 | 한국전자통신연구원 | 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법 |
| US7617231B2 (en) | 2005-12-07 | 2009-11-10 | Electronics And Telecommunications Research Institute | Data hashing method, data processing method, and data processing system using similarity-based hashing algorithm |
| US7642539B2 (en) * | 2005-12-13 | 2010-01-05 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation pad and manufacturing method |
| CN100514663C (zh) * | 2005-12-30 | 2009-07-15 | 财团法人工业技术研究院 | 半导体存储元件、相变存储元件及其制造方法 |
| JP5320295B2 (ja) * | 2006-11-02 | 2013-10-23 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体 |
| US8542524B2 (en) * | 2007-02-12 | 2013-09-24 | Avalanche Technology, Inc. | Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement |
| US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
| US7678606B2 (en) * | 2007-09-04 | 2010-03-16 | Industrial Technology Research Institute | Phase change memory device and fabrication method thereof |
| US8275842B2 (en) | 2007-09-30 | 2012-09-25 | Symantec Operating Corporation | System and method for detecting content similarity within email documents by sparse subset hashing |
| KR101168977B1 (ko) | 2007-11-19 | 2012-07-26 | 삼성전자주식회사 | 콘택홀에 인접한 층간절연막 상에 성장 방지막을 갖는집적회로 메모리 소자의 제조 방법 |
| US7879645B2 (en) | 2008-01-28 | 2011-02-01 | Macronix International Co., Ltd. | Fill-in etching free pore device |
| US7960203B2 (en) | 2008-01-29 | 2011-06-14 | International Business Machines Corporation | Pore phase change material cell fabricated from recessed pillar |
| JP2009206418A (ja) * | 2008-02-29 | 2009-09-10 | Elpida Memory Inc | 不揮発性メモリ装置及びその製造方法 |
| US8101456B2 (en) | 2008-10-01 | 2012-01-24 | International Business Machines Corporation | Method to reduce a via area in a phase change memory cell |
| US7929338B2 (en) * | 2009-02-24 | 2011-04-19 | International Business Machines Corporation | Memory reading method for resistance drift mitigation |
| CN105097952B (zh) * | 2009-12-25 | 2018-12-21 | 株式会社理光 | 绝缘膜形成墨水、绝缘膜制造方法和半导体制造方法 |
| JP5633346B2 (ja) * | 2009-12-25 | 2014-12-03 | 株式会社リコー | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
| DE102010061572A1 (de) * | 2009-12-29 | 2011-07-14 | Samsung Electronics Co., Ltd., Kyonggi | Phasenänderungsstruktur, Verfahren zum Bilden einer Phasenänderungsschicht, Phasenänderungs-Speichervorrichtung und Verfahren zum Herstellen einer Phasenänderungs-Speichervorrichtung |
| US10103331B2 (en) * | 2010-02-05 | 2018-10-16 | Industry-University Cooperation Foundation Hanyang University | Slurry for polishing phase-change materials and method for producing a phase-change device using same |
| US9812638B2 (en) * | 2010-03-19 | 2017-11-07 | Globalfoundries Inc. | Backend of line (BEOL) compatible high current density access device for high density arrays of electronic components |
| US8728859B2 (en) * | 2010-08-12 | 2014-05-20 | International Business Machines Corporation | Small footprint phase change memory cell |
| US8559217B2 (en) | 2010-12-10 | 2013-10-15 | International Business Machines Corporation | Phase change material cell with stress inducer liner |
| US8822970B2 (en) * | 2011-02-21 | 2014-09-02 | Korea Advanced Institute Of Science And Technology (Kaist) | Phase-change memory device and flexible phase-change memory device insulating nano-dot |
| US20120267601A1 (en) | 2011-04-22 | 2012-10-25 | International Business Machines Corporation | Phase change memory cells with surfactant layers |
| KR101872949B1 (ko) * | 2011-05-17 | 2018-07-02 | 삼성전자주식회사 | 상변화 메모리 장치 및 이의 제조 방법 |
| US8592795B2 (en) * | 2011-07-01 | 2013-11-26 | Micron Technology, Inc. | Multilevel mixed valence oxide (MVO) memory |
| FR2995443B1 (fr) * | 2012-09-10 | 2014-09-26 | St Microelectronics Crolles 2 | Cellule memoire a changement de phase |
| CN102810637A (zh) * | 2012-09-13 | 2012-12-05 | 中国科学院上海微系统与信息技术研究所 | 用于替代dram及flash的相变存储单元及其制作方法 |
| US10224279B2 (en) * | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| US9515262B2 (en) * | 2013-05-29 | 2016-12-06 | Shih-Yuan Wang | Resistive random-access memory with implanted and radiated channels |
| CN103346258B (zh) * | 2013-07-19 | 2015-08-26 | 中国科学院上海微系统与信息技术研究所 | 相变存储单元及其制备方法 |
| KR102077641B1 (ko) * | 2013-08-06 | 2020-02-14 | 삼성전자주식회사 | 상변화 물질막, 이의 형성 방법 |
| US9627612B2 (en) * | 2014-02-27 | 2017-04-18 | International Business Machines Corporation | Metal nitride keyhole or spacer phase change memory cell structures |
| US11133461B2 (en) * | 2014-09-26 | 2021-09-28 | Intel Corporation | Laminate diffusion barriers and related devices and methods |
| US9589635B2 (en) * | 2014-12-11 | 2017-03-07 | International Business Machines Corporation | Semiconductor device with a stoichiometric gradient |
| WO2016194092A1 (ja) * | 2015-05-29 | 2016-12-08 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法並びに半導体記憶装置の製造装置 |
| US9385318B1 (en) | 2015-07-28 | 2016-07-05 | Lam Research Corporation | Method to integrate a halide-containing ALD film on sensitive materials |
| FR3043842B1 (fr) * | 2015-11-13 | 2017-12-15 | Commissariat Energie Atomique | Procede de fabrication d’une memoire pcram |
| US9735202B1 (en) * | 2016-02-16 | 2017-08-15 | Sandisk Technologies Llc | Implementation of VMCO area switching cell to VBL architecture |
| US10256406B2 (en) * | 2016-05-16 | 2019-04-09 | Micron Technology, Inc. | Semiconductor structures including liners and related methods |
| CN106355183A (zh) | 2016-08-16 | 2017-01-25 | 珠海市魅族科技有限公司 | 检测主题文件相似度的方法及装置 |
| US10128437B1 (en) * | 2017-08-31 | 2018-11-13 | Micron Technology, Inc. | Semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods |
| US10262730B1 (en) * | 2017-10-16 | 2019-04-16 | Sandisk Technologies Llc | Multi-state and confined phase change memory with vertical cross-point structure |
| US10141503B1 (en) | 2017-11-03 | 2018-11-27 | International Business Machines Corporation | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
-
2017
- 2017-11-03 US US15/803,349 patent/US10141503B1/en active Active
-
2018
- 2018-10-03 US US16/151,052 patent/US10886464B2/en active Active
- 2018-10-30 JP JP2020521989A patent/JP7267271B2/ja active Active
- 2018-10-30 GB GB2007518.0A patent/GB2582470B/en active Active
- 2018-10-30 CN CN201880070625.1A patent/CN111279500B/zh active Active
- 2018-10-30 DE DE112018004630.3T patent/DE112018004630B4/de active Active
- 2018-10-30 WO PCT/IB2018/058468 patent/WO2019087050A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2021501987A5 (enExample) | ||
| GB2582470A (en) | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication | |
| JP6116849B2 (ja) | 金属／金属窒化物基板上に貴金属を選択的に堆積させるための方法 | |
| TWI820967B (zh) | 用於在基材的表面上選擇性形成材料的方法 | |
| KR101622327B1 (ko) | 상변화 메모리 소자들에서 전극들의 기상 제조 방법들 | |
| TWI571524B (zh) | 用於穿孔中選擇性鎢沉積的系統及方法 | |
| JP2008538126A5 (enExample) | ||
| JP2019504503A5 (enExample) | ||
| JP2018095961A5 (enExample) | ||
| JP2018516465A5 (enExample) | ||
| JP2010157700A5 (enExample) | ||
| TW201936980A (zh) | 沈積方法 | |
| JP2016046532A5 (enExample) | ||
| JP6466498B2 (ja) | 凹状フィーチャ内の膜のボトムアップ形成方法 | |
| JP2004536225A5 (enExample) | ||
| CN109661481A (zh) | 使用MoOC14的CVD Mo沉积 | |
| CN102265383A (zh) | 用于沉积具有降低电阻率及改良表面形态的钨膜的方法 | |
| KR20090039083A (ko) | 루테늄 막 형성 방법 | |
| JP4001509B2 (ja) | 半導体素子の拡散防止膜形成方法 | |
| TWI438299B (zh) | 沈積含銻相變材料至基材之方法及形成相變記憶體電路之方法 | |
| TWI758428B (zh) | 用於特徵部之由下而上間隙填充的溼式金屬晶種沉積方法 | |
| JP2020534702A5 (enExample) | ||
| JP4889227B2 (ja) | 基板処理方法および成膜方法 | |
| JP3759525B2 (ja) | 半導体装置の製造方法 | |
| CN107644842B (zh) | 通孔的制造方法 |