JP7267271B2 - 半導体デバイス製作用の高アスペクト比誘電孔における選択的相変化材料成長 - Google Patents
半導体デバイス製作用の高アスペクト比誘電孔における選択的相変化材料成長 Download PDFInfo
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- 239000010936 titanium Substances 0.000 claims description 8
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
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Description
Claims (11)
- 相変化メモリ(PCM)デバイスを製作するための方法であって、
第1の誘電材料を堆積させることと、
前記第1の誘電材料に開口を形成することと、
前記開口内にボトム金属電極を堆積させ、前記ボトム金属電極を磨くことと、
前記ボトム金属電極および前記第1の誘電材料の表面に第2の誘電材料を堆積させることと、
前記相変化メモリ(PCM)デバイスの前記第2の誘電材料内の孔に金属窒化物をコンフォーマルに堆積させることであって、前記孔が前記第2の誘電材料を貫通し、前記ボトム金属電極の上面の一部を露出させる、前記堆積させることと、
前記金属窒化物が、前記金属窒化物のエッチング後に前記ボトム金属電極の前記上面の前記一部を露出させて前記孔の側壁全体のみに直接残るように、前記金属窒化物をエッチングすることと、
前記孔を相変化材料で埋めるように、前記第2の誘電材料の前記孔内にのみ前記相変化材料を選択的に堆積させることであって、前記相変化材料の前記選択的堆積が、前記第2の誘電材料の露出面上の前記相変化材料の成長率よりも大きい率で前記金属窒化物上の前記相変化材料の成長率をもたらす、前記堆積させることと、
前記金属窒化物の前記堆積、前記金属窒化物のエッチング、および前記相変化材料の前記選択的堆積の最中に真空を適用することと、
前記相変化材料の上面および前記第2の誘電材料の上面の一部に接触してトップ金属電極を堆積させ、前記トップ金属電極の側部の周りに第3の誘電材料を堆積させることと、を含む、方法。 - コンフォーマル原子層堆積成長プロセスを使用して、前記金属窒化物が堆積される、請求項1に記載の方法。
- 前記金属窒化物は、タンタル(Ta)、チタン(Ti)、およびアルミニウム(Al)のうちの1つまたは複数を含む、請求項1に記載の方法。
- 前記金属窒化物は、プラズマ・エッチング・プロセスを使用してエッチングされる、請求項1に記載の方法。
- 前記相変化材料は、ゲルマニウム-アンチモン-テルル(GST)化合物を含む、請求項1に記載の方法。
- 前記相変化材料の前記選択的堆積は、所定の温度におけるゲルマニウム-アンチモン-テルル(GST)成長の選択的堆積を含む、請求項1に記載の方法。
- 前記選択的堆積は、化学蒸着(CVD)、パルス式CVD、および原子層堆積(ALD)のうちの1つまたは複数を含む、請求項1に記載の方法。
- 前記相変化材料の前記選択的堆積中に特定の流量でガス混合物の流れを加えることをさらに含む、請求項1に記載の方法。
- 前記ガス混合物は、アンモニア(NH3)とアルゴン(Ar)の混合物を含む、請求項8に記載の方法。
- 前記トップ金属電極が、堆積プロセスを使用して形成される、請求項1に記載の方法。
- 1つまたは複数のコンピュータ可読ストレージ・デバイス、および前記1つまたは複数のストレージ・デバイスのうちの少なくとも1つに格納されたプログラム命令を備えるコンピュータ使用可能プログラム製品であって、前記格納されたプログラム命令が、
第1の誘電材料を堆積させるためのプログラム命令と、
前記第1の誘電材料に開口を形成するためのプログラム命令と、
前記開口内にボトム金属電極を堆積させ、前記ボトム金属電極を磨くためのプログラム命令と、
前記ボトム金属電極および前記第1の誘電材料の表面に第2の誘電材料を堆積させるためのプログラム命令と、
前記第2の誘電材料内の孔に金属窒化物をコンフォーマルに堆積させるためのプログラム命令であって、前記孔が前記第2の誘電材料を貫通し、前記ボトム金属電極の上面の一部を露出させる、前記プログラム命令と、
前記金属窒化物が、前記金属窒化物のエッチング後に前記ボトム金属電極の前記上面の前記一部を露出させて前記孔の側壁全体にのみ直接残るように、前記金属窒化物をエッチングするためのプログラム命令と、
前記孔を相変化材料で埋めるように、前記第2の誘電材料の前記孔内にのみ前記相変化材料を選択的に堆積させるためのプログラム命令であって、前記相変化材料の前記選択的堆積が、前記第2の誘電材料の露出面上の前記相変化材料の成長率よりも大きい率で前記金属窒化物上の前記相変化材料の成長率をもたらす、前記プログラム命令と、
前記金属窒化物の前記堆積、前記金属窒化物のエッチング、および前記相変化材料の前記選択的堆積の最中に真空を適用するためのプログラム命令と、
前記相変化材料の上面および前記第2の誘電材料の上面の一部に接触してトップ金属電極を堆積させ、前記トップ金属電極の側部の周りに第3の誘電材料を堆積させるためのプログラム命令と、
を含む、コンピュータ使用可能プログラム製品。
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US15/803,349 US10141503B1 (en) | 2017-11-03 | 2017-11-03 | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
PCT/IB2018/058468 WO2019087050A1 (en) | 2017-11-03 | 2018-10-30 | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
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US10141503B1 (en) | 2017-11-03 | 2018-11-27 | International Business Machines Corporation | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
US10825514B2 (en) * | 2018-04-20 | 2020-11-03 | International Business Machines Corporation | Bipolar switching operation of confined phase change memory for a multi-level cell memory |
US11158788B2 (en) * | 2018-10-30 | 2021-10-26 | International Business Machines Corporation | Atomic layer deposition and physical vapor deposition bilayer for additive patterning |
US11482669B2 (en) * | 2019-09-10 | 2022-10-25 | Globalfoundries Singapore Pte. Ltd. | Memory device and a method for forming the memory device |
CN112635661B (zh) * | 2019-10-09 | 2023-08-01 | 联华电子股份有限公司 | 多位可变电阻式存储器单元及其形成方法 |
US20230363299A1 (en) * | 2019-12-19 | 2023-11-09 | Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd. | Phase change memory unit and preparation method therefor |
KR20210124843A (ko) | 2020-04-07 | 2021-10-15 | 삼성전자주식회사 | 메모리 소자 |
CN112133825A (zh) * | 2020-09-03 | 2020-12-25 | 中国科学院上海微系统与信息技术研究所 | 一种高稳定性相变存储单元及其制备方法 |
KR20220039629A (ko) * | 2020-09-22 | 2022-03-29 | 에이에스엠 아이피 홀딩 비.브이. | 게르마늄 칼코지나이드를 포함한 층을 증착하기 위한 시스템, 소자, 및 방법 |
KR20220071026A (ko) | 2020-11-23 | 2022-05-31 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
US11476418B2 (en) * | 2020-12-08 | 2022-10-18 | International Business Machines Corporation | Phase change memory cell with a projection liner |
US11456415B2 (en) | 2020-12-08 | 2022-09-27 | International Business Machines Corporation | Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner |
US11545624B2 (en) | 2021-03-29 | 2023-01-03 | International Business Machines Corporation | Phase change memory cell resistive liner |
US11980111B2 (en) * | 2021-09-08 | 2024-05-07 | International Business Machines Corporation | Confined bridge cell phase change memory |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308077A (ja) | 2000-04-27 | 2001-11-02 | Toshiba Corp | 半導体製造装置 |
US20090305458A1 (en) | 2006-11-02 | 2009-12-10 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for cvd/ald of metal thin films |
US20100214830A1 (en) | 2009-02-24 | 2010-08-26 | Franceschini Michele M | Memory reading method for resistance drift mitigation |
WO2011078398A1 (en) | 2009-12-25 | 2011-06-30 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
US20110155985A1 (en) | 2009-12-29 | 2011-06-30 | Samsung Electronics Co., Ltd. | Phase change structure, and phase change memory device |
JP2011151370A (ja) | 2009-12-25 | 2011-08-04 | Ricoh Co Ltd | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
US20150243884A1 (en) | 2014-02-27 | 2015-08-27 | International Business Machines Corporation | Metal nitride keyhole or spacer phase change memory cell structures |
WO2016048701A1 (en) | 2014-09-26 | 2016-03-31 | Intel Corporation | Laminate diffusion barriers and related devices and methods |
WO2016194092A1 (ja) | 2015-05-29 | 2016-12-08 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法並びに半導体記憶装置の製造装置 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795657A (en) * | 1984-04-13 | 1989-01-03 | Energy Conversion Devices, Inc. | Method of fabricating a programmable array |
US5814527A (en) | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US6511867B2 (en) | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Utilizing atomic layer deposition for programmable device |
JP4434527B2 (ja) * | 2001-08-08 | 2010-03-17 | 株式会社東芝 | 半導体記憶装置 |
US6885573B2 (en) * | 2002-03-15 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Diode for use in MRAM devices and method of manufacture |
US6855975B2 (en) * | 2002-04-10 | 2005-02-15 | Micron Technology, Inc. | Thin film diode integrated with chalcogenide memory cell |
US6937509B2 (en) * | 2003-09-08 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Data storage device and method of forming the same |
US7042757B2 (en) * | 2004-03-04 | 2006-05-09 | Hewlett-Packard Development Company, L.P. | 1R1D MRAM block architecture |
KR100687750B1 (ko) * | 2005-09-07 | 2007-02-27 | 한국전자통신연구원 | 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법 |
US7617231B2 (en) | 2005-12-07 | 2009-11-10 | Electronics And Telecommunications Research Institute | Data hashing method, data processing method, and data processing system using similarity-based hashing algorithm |
US7642539B2 (en) * | 2005-12-13 | 2010-01-05 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation pad and manufacturing method |
CN100514663C (zh) * | 2005-12-30 | 2009-07-15 | 财团法人工业技术研究院 | 半导体存储元件、相变存储元件及其制造方法 |
US8542524B2 (en) * | 2007-02-12 | 2013-09-24 | Avalanche Technology, Inc. | Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement |
US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
US7678606B2 (en) * | 2007-09-04 | 2010-03-16 | Industrial Technology Research Institute | Phase change memory device and fabrication method thereof |
US8275842B2 (en) | 2007-09-30 | 2012-09-25 | Symantec Operating Corporation | System and method for detecting content similarity within email documents by sparse subset hashing |
KR101168977B1 (ko) | 2007-11-19 | 2012-07-26 | 삼성전자주식회사 | 콘택홀에 인접한 층간절연막 상에 성장 방지막을 갖는집적회로 메모리 소자의 제조 방법 |
US7879645B2 (en) | 2008-01-28 | 2011-02-01 | Macronix International Co., Ltd. | Fill-in etching free pore device |
US7960203B2 (en) | 2008-01-29 | 2011-06-14 | International Business Machines Corporation | Pore phase change material cell fabricated from recessed pillar |
JP2009206418A (ja) * | 2008-02-29 | 2009-09-10 | Elpida Memory Inc | 不揮発性メモリ装置及びその製造方法 |
US8101456B2 (en) | 2008-10-01 | 2012-01-24 | International Business Machines Corporation | Method to reduce a via area in a phase change memory cell |
US10103331B2 (en) * | 2010-02-05 | 2018-10-16 | Industry-University Cooperation Foundation Hanyang University | Slurry for polishing phase-change materials and method for producing a phase-change device using same |
US9812638B2 (en) * | 2010-03-19 | 2017-11-07 | Globalfoundries Inc. | Backend of line (BEOL) compatible high current density access device for high density arrays of electronic components |
US8728859B2 (en) * | 2010-08-12 | 2014-05-20 | International Business Machines Corporation | Small footprint phase change memory cell |
US8559217B2 (en) | 2010-12-10 | 2013-10-15 | International Business Machines Corporation | Phase change material cell with stress inducer liner |
US8822970B2 (en) * | 2011-02-21 | 2014-09-02 | Korea Advanced Institute Of Science And Technology (Kaist) | Phase-change memory device and flexible phase-change memory device insulating nano-dot |
US20120267601A1 (en) | 2011-04-22 | 2012-10-25 | International Business Machines Corporation | Phase change memory cells with surfactant layers |
KR101872949B1 (ko) * | 2011-05-17 | 2018-07-02 | 삼성전자주식회사 | 상변화 메모리 장치 및 이의 제조 방법 |
US8592795B2 (en) * | 2011-07-01 | 2013-11-26 | Micron Technology, Inc. | Multilevel mixed valence oxide (MVO) memory |
FR2995443B1 (fr) * | 2012-09-10 | 2014-09-26 | St Microelectronics Crolles 2 | Cellule memoire a changement de phase |
CN102810637A (zh) * | 2012-09-13 | 2012-12-05 | 中国科学院上海微系统与信息技术研究所 | 用于替代dram及flash的相变存储单元及其制作方法 |
US10224279B2 (en) * | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US9515262B2 (en) * | 2013-05-29 | 2016-12-06 | Shih-Yuan Wang | Resistive random-access memory with implanted and radiated channels |
CN103346258B (zh) * | 2013-07-19 | 2015-08-26 | 中国科学院上海微系统与信息技术研究所 | 相变存储单元及其制备方法 |
KR102077641B1 (ko) * | 2013-08-06 | 2020-02-14 | 삼성전자주식회사 | 상변화 물질막, 이의 형성 방법 |
US9589635B2 (en) * | 2014-12-11 | 2017-03-07 | International Business Machines Corporation | Semiconductor device with a stoichiometric gradient |
US9385318B1 (en) | 2015-07-28 | 2016-07-05 | Lam Research Corporation | Method to integrate a halide-containing ALD film on sensitive materials |
FR3043842B1 (fr) * | 2015-11-13 | 2017-12-15 | Commissariat Energie Atomique | Procede de fabrication d’une memoire pcram |
US9735202B1 (en) * | 2016-02-16 | 2017-08-15 | Sandisk Technologies Llc | Implementation of VMCO area switching cell to VBL architecture |
US10256406B2 (en) * | 2016-05-16 | 2019-04-09 | Micron Technology, Inc. | Semiconductor structures including liners and related methods |
CN106355183A (zh) | 2016-08-16 | 2017-01-25 | 珠海市魅族科技有限公司 | 检测主题文件相似度的方法及装置 |
US10128437B1 (en) * | 2017-08-31 | 2018-11-13 | Micron Technology, Inc. | Semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods |
US10262730B1 (en) * | 2017-10-16 | 2019-04-16 | Sandisk Technologies Llc | Multi-state and confined phase change memory with vertical cross-point structure |
US10141503B1 (en) | 2017-11-03 | 2018-11-27 | International Business Machines Corporation | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
-
2017
- 2017-11-03 US US15/803,349 patent/US10141503B1/en active Active
-
2018
- 2018-10-03 US US16/151,052 patent/US10886464B2/en active Active
- 2018-10-30 JP JP2020521989A patent/JP7267271B2/ja active Active
- 2018-10-30 CN CN201880070625.1A patent/CN111279500B/zh active Active
- 2018-10-30 WO PCT/IB2018/058468 patent/WO2019087050A1/en active Application Filing
- 2018-10-30 DE DE112018004630.3T patent/DE112018004630B4/de active Active
- 2018-10-30 GB GB2007518.0A patent/GB2582470B/en active Active
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308077A (ja) | 2000-04-27 | 2001-11-02 | Toshiba Corp | 半導体製造装置 |
US20090305458A1 (en) | 2006-11-02 | 2009-12-10 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for cvd/ald of metal thin films |
WO2008057616A8 (en) | 2006-11-02 | 2010-03-18 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for cvd/ald of metal thin films |
JP2010514918A (ja) | 2006-11-02 | 2010-05-06 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属薄膜のcvd/aldに有用なアンチモンおよびゲルマニウム錯体 |
JP2012518862A (ja) | 2009-02-24 | 2012-08-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 抵抗ドリフト軽減のためのメモリ読み取り方法、メモリ・コントローラ、コンピュータ・プログラム、及びメモリ・デバイス |
US20100214830A1 (en) | 2009-02-24 | 2010-08-26 | Franceschini Michele M | Memory reading method for resistance drift mitigation |
WO2010097302A1 (en) | 2009-02-24 | 2010-09-02 | International Business Machines Corporation | Memory reading method taking care of resistance drift effects |
WO2011078398A1 (en) | 2009-12-25 | 2011-06-30 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
US20120248451A1 (en) | 2009-12-25 | 2012-10-04 | Yuji Sone | Field-effect transistor, semiconductor memory display element, image display device, and system |
JP2011151370A (ja) | 2009-12-25 | 2011-08-04 | Ricoh Co Ltd | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
JP2011139070A (ja) | 2009-12-29 | 2011-07-14 | Samsung Electronics Co Ltd | 相変化構造物、相変化物質層の形成方法、相変化メモリ装置及び相変化メモリ装置の製造方法 |
US20110155985A1 (en) | 2009-12-29 | 2011-06-30 | Samsung Electronics Co., Ltd. | Phase change structure, and phase change memory device |
US20150243884A1 (en) | 2014-02-27 | 2015-08-27 | International Business Machines Corporation | Metal nitride keyhole or spacer phase change memory cell structures |
WO2016048701A1 (en) | 2014-09-26 | 2016-03-31 | Intel Corporation | Laminate diffusion barriers and related devices and methods |
US20160093804A1 (en) | 2014-09-26 | 2016-03-31 | Christopher Petz | Laminate diffusion barriers and related devices and methods |
JP2017532771A (ja) | 2014-09-26 | 2017-11-02 | インテル・コーポレーション | 積層拡散障壁及び関連デバイス及び方法 |
WO2016194092A1 (ja) | 2015-05-29 | 2016-12-08 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法並びに半導体記憶装置の製造装置 |
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