DE112018004630B4 - Selektives aufwachsen eines phasenänderungsmaterials in dielektrischen poren mit einem hohen aspektverhältnis für die fertigung von halbleitereinheiten - Google Patents

Selektives aufwachsen eines phasenänderungsmaterials in dielektrischen poren mit einem hohen aspektverhältnis für die fertigung von halbleitereinheiten Download PDF

Info

Publication number
DE112018004630B4
DE112018004630B4 DE112018004630.3T DE112018004630T DE112018004630B4 DE 112018004630 B4 DE112018004630 B4 DE 112018004630B4 DE 112018004630 T DE112018004630 T DE 112018004630T DE 112018004630 B4 DE112018004630 B4 DE 112018004630B4
Authority
DE
Germany
Prior art keywords
phase change
change material
dielectric material
metal nitride
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112018004630.3T
Other languages
German (de)
English (en)
Other versions
DE112018004630T5 (de
Inventor
Robert Bruce
Joseph Brightsky Matthew
Takeshi Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
International Business Machines Corp
Original Assignee
Ulvac Inc
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, International Business Machines Corp filed Critical Ulvac Inc
Publication of DE112018004630T5 publication Critical patent/DE112018004630T5/de
Application granted granted Critical
Publication of DE112018004630B4 publication Critical patent/DE112018004630B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
DE112018004630.3T 2017-11-03 2018-10-30 Selektives aufwachsen eines phasenänderungsmaterials in dielektrischen poren mit einem hohen aspektverhältnis für die fertigung von halbleitereinheiten Active DE112018004630B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/803,349 US10141503B1 (en) 2017-11-03 2017-11-03 Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication
US15/803,349 2017-11-03
PCT/IB2018/058468 WO2019087050A1 (en) 2017-11-03 2018-10-30 Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

Publications (2)

Publication Number Publication Date
DE112018004630T5 DE112018004630T5 (de) 2020-07-16
DE112018004630B4 true DE112018004630B4 (de) 2022-02-03

Family

ID=64315486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112018004630.3T Active DE112018004630B4 (de) 2017-11-03 2018-10-30 Selektives aufwachsen eines phasenänderungsmaterials in dielektrischen poren mit einem hohen aspektverhältnis für die fertigung von halbleitereinheiten

Country Status (6)

Country Link
US (2) US10141503B1 (enExample)
JP (1) JP7267271B2 (enExample)
CN (1) CN111279500B (enExample)
DE (1) DE112018004630B4 (enExample)
GB (1) GB2582470B (enExample)
WO (1) WO2019087050A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10141503B1 (en) 2017-11-03 2018-11-27 International Business Machines Corporation Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication
US10825514B2 (en) * 2018-04-20 2020-11-03 International Business Machines Corporation Bipolar switching operation of confined phase change memory for a multi-level cell memory
US11158788B2 (en) * 2018-10-30 2021-10-26 International Business Machines Corporation Atomic layer deposition and physical vapor deposition bilayer for additive patterning
US11482669B2 (en) * 2019-09-10 2022-10-25 Globalfoundries Singapore Pte. Ltd. Memory device and a method for forming the memory device
CN112635661B (zh) * 2019-10-09 2023-08-01 联华电子股份有限公司 多位可变电阻式存储器单元及其形成方法
US12279538B2 (en) * 2019-12-19 2025-04-15 Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd Phase change memory unit and preparation method therefor
US11380843B2 (en) * 2020-02-13 2022-07-05 International Business Machines Corporation Phase change memory using multiple stacks of PCM materials
KR102766575B1 (ko) 2020-04-07 2025-02-12 삼성전자주식회사 메모리 소자
US11251370B1 (en) * 2020-08-12 2022-02-15 International Business Machines Corporation Projected memory device with carbon-based projection component
CN112133825A (zh) * 2020-09-03 2020-12-25 中国科学院上海微系统与信息技术研究所 一种高稳定性相变存储单元及其制备方法
KR20220039629A (ko) * 2020-09-22 2022-03-29 에이에스엠 아이피 홀딩 비.브이. 게르마늄 칼코지나이드를 포함한 층을 증착하기 위한 시스템, 소자, 및 방법
US11665985B2 (en) * 2020-11-23 2023-05-30 International Business Machines Corporation Projected memory device with reduced minimum conductance state
KR20220071026A (ko) 2020-11-23 2022-05-31 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법
US11456413B2 (en) 2020-11-27 2022-09-27 International Business Machines Corporation In-situ drift-mitigation liner for pillar cell PCM
US11456415B2 (en) 2020-12-08 2022-09-27 International Business Machines Corporation Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner
US11476418B2 (en) * 2020-12-08 2022-10-18 International Business Machines Corporation Phase change memory cell with a projection liner
US12150392B2 (en) * 2020-12-22 2024-11-19 International Business Machines Corporation Transfer length phase change material (PCM) based bridge cell
US11545624B2 (en) 2021-03-29 2023-01-03 International Business Machines Corporation Phase change memory cell resistive liner
US12245530B2 (en) 2021-06-25 2025-03-04 International Business Machines Corporation Phase change memory with concentric ring-shaped heater
US12219884B2 (en) 2021-06-25 2025-02-04 International Business Machines Corporation Phase change memory with conductive rings
US12408571B2 (en) 2021-06-25 2025-09-02 International Business Machines Corporation Phase change memory with graded heater
US11980111B2 (en) * 2021-09-08 2024-05-07 International Business Machines Corporation Confined bridge cell phase change memory
US12274185B2 (en) 2021-10-19 2025-04-08 International Business Machines Corporation Phase change memory cell having pillar bottom electrode with improved thermal insulation
US12495722B2 (en) 2021-12-06 2025-12-09 International Business Machines Corporation Suppression of void-formation of PCM materials
US12274186B2 (en) 2022-06-07 2025-04-08 International Business Machines Corporation Low current phase-change memory device
CN115768130B (zh) * 2022-11-28 2025-10-28 厦门半导体工业技术研发有限公司 一种半导体集成电路器件及其制造方法
CN119008598A (zh) * 2023-05-16 2024-11-22 台湾积体电路制造股份有限公司 电容器结构的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090130797A1 (en) 2007-11-19 2009-05-21 Samsung Electronics Co., Ltd. Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials
US20120267601A1 (en) 2011-04-22 2012-10-25 International Business Machines Corporation Phase change memory cells with surfactant layers
US20150243884A1 (en) 2014-02-27 2015-08-27 International Business Machines Corporation Metal nitride keyhole or spacer phase change memory cell structures
US9385318B1 (en) 2015-07-28 2016-07-05 Lam Research Corporation Method to integrate a halide-containing ALD film on sensitive materials

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795657A (en) * 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US5814527A (en) 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
JP2001308077A (ja) * 2000-04-27 2001-11-02 Toshiba Corp 半導体製造装置
US6511867B2 (en) 2001-06-30 2003-01-28 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device
JP4434527B2 (ja) * 2001-08-08 2010-03-17 株式会社東芝 半導体記憶装置
US6885573B2 (en) * 2002-03-15 2005-04-26 Hewlett-Packard Development Company, L.P. Diode for use in MRAM devices and method of manufacture
US6855975B2 (en) * 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6937509B2 (en) * 2003-09-08 2005-08-30 Hewlett-Packard Development Company, L.P. Data storage device and method of forming the same
US7042757B2 (en) * 2004-03-04 2006-05-09 Hewlett-Packard Development Company, L.P. 1R1D MRAM block architecture
KR100687750B1 (ko) * 2005-09-07 2007-02-27 한국전자통신연구원 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법
US7617231B2 (en) 2005-12-07 2009-11-10 Electronics And Telecommunications Research Institute Data hashing method, data processing method, and data processing system using similarity-based hashing algorithm
US7642539B2 (en) * 2005-12-13 2010-01-05 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation pad and manufacturing method
CN100514663C (zh) * 2005-12-30 2009-07-15 财团法人工业技术研究院 半导体存储元件、相变存储元件及其制造方法
JP5320295B2 (ja) * 2006-11-02 2013-10-23 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体
US8542524B2 (en) * 2007-02-12 2013-09-24 Avalanche Technology, Inc. Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
US7382647B1 (en) * 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US7678606B2 (en) * 2007-09-04 2010-03-16 Industrial Technology Research Institute Phase change memory device and fabrication method thereof
US8275842B2 (en) 2007-09-30 2012-09-25 Symantec Operating Corporation System and method for detecting content similarity within email documents by sparse subset hashing
US7879645B2 (en) 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US7960203B2 (en) 2008-01-29 2011-06-14 International Business Machines Corporation Pore phase change material cell fabricated from recessed pillar
JP2009206418A (ja) * 2008-02-29 2009-09-10 Elpida Memory Inc 不揮発性メモリ装置及びその製造方法
US8101456B2 (en) 2008-10-01 2012-01-24 International Business Machines Corporation Method to reduce a via area in a phase change memory cell
US7929338B2 (en) * 2009-02-24 2011-04-19 International Business Machines Corporation Memory reading method for resistance drift mitigation
CN105097952B (zh) * 2009-12-25 2018-12-21 株式会社理光 绝缘膜形成墨水、绝缘膜制造方法和半导体制造方法
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
DE102010061572A1 (de) * 2009-12-29 2011-07-14 Samsung Electronics Co., Ltd., Kyonggi Phasenänderungsstruktur, Verfahren zum Bilden einer Phasenänderungsschicht, Phasenänderungs-Speichervorrichtung und Verfahren zum Herstellen einer Phasenänderungs-Speichervorrichtung
US10103331B2 (en) * 2010-02-05 2018-10-16 Industry-University Cooperation Foundation Hanyang University Slurry for polishing phase-change materials and method for producing a phase-change device using same
US9812638B2 (en) * 2010-03-19 2017-11-07 Globalfoundries Inc. Backend of line (BEOL) compatible high current density access device for high density arrays of electronic components
US8728859B2 (en) * 2010-08-12 2014-05-20 International Business Machines Corporation Small footprint phase change memory cell
US8559217B2 (en) 2010-12-10 2013-10-15 International Business Machines Corporation Phase change material cell with stress inducer liner
US8822970B2 (en) * 2011-02-21 2014-09-02 Korea Advanced Institute Of Science And Technology (Kaist) Phase-change memory device and flexible phase-change memory device insulating nano-dot
KR101872949B1 (ko) * 2011-05-17 2018-07-02 삼성전자주식회사 상변화 메모리 장치 및 이의 제조 방법
US8592795B2 (en) * 2011-07-01 2013-11-26 Micron Technology, Inc. Multilevel mixed valence oxide (MVO) memory
FR2995443B1 (fr) * 2012-09-10 2014-09-26 St Microelectronics Crolles 2 Cellule memoire a changement de phase
CN102810637A (zh) * 2012-09-13 2012-12-05 中国科学院上海微系统与信息技术研究所 用于替代dram及flash的相变存储单元及其制作方法
US10224279B2 (en) * 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US9515262B2 (en) * 2013-05-29 2016-12-06 Shih-Yuan Wang Resistive random-access memory with implanted and radiated channels
CN103346258B (zh) * 2013-07-19 2015-08-26 中国科学院上海微系统与信息技术研究所 相变存储单元及其制备方法
KR102077641B1 (ko) * 2013-08-06 2020-02-14 삼성전자주식회사 상변화 물질막, 이의 형성 방법
US11133461B2 (en) * 2014-09-26 2021-09-28 Intel Corporation Laminate diffusion barriers and related devices and methods
US9589635B2 (en) * 2014-12-11 2017-03-07 International Business Machines Corporation Semiconductor device with a stoichiometric gradient
WO2016194092A1 (ja) * 2015-05-29 2016-12-08 株式会社日立製作所 半導体記憶装置及びその製造方法並びに半導体記憶装置の製造装置
FR3043842B1 (fr) * 2015-11-13 2017-12-15 Commissariat Energie Atomique Procede de fabrication d’une memoire pcram
US9735202B1 (en) * 2016-02-16 2017-08-15 Sandisk Technologies Llc Implementation of VMCO area switching cell to VBL architecture
US10256406B2 (en) * 2016-05-16 2019-04-09 Micron Technology, Inc. Semiconductor structures including liners and related methods
CN106355183A (zh) 2016-08-16 2017-01-25 珠海市魅族科技有限公司 检测主题文件相似度的方法及装置
US10128437B1 (en) * 2017-08-31 2018-11-13 Micron Technology, Inc. Semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods
US10262730B1 (en) * 2017-10-16 2019-04-16 Sandisk Technologies Llc Multi-state and confined phase change memory with vertical cross-point structure
US10141503B1 (en) 2017-11-03 2018-11-27 International Business Machines Corporation Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090130797A1 (en) 2007-11-19 2009-05-21 Samsung Electronics Co., Ltd. Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials
US20120267601A1 (en) 2011-04-22 2012-10-25 International Business Machines Corporation Phase change memory cells with surfactant layers
US20150243884A1 (en) 2014-02-27 2015-08-27 International Business Machines Corporation Metal nitride keyhole or spacer phase change memory cell structures
US9385318B1 (en) 2015-07-28 2016-07-05 Lam Research Corporation Method to integrate a halide-containing ALD film on sensitive materials

Also Published As

Publication number Publication date
DE112018004630T5 (de) 2020-07-16
US10141503B1 (en) 2018-11-27
JP2021501987A (ja) 2021-01-21
JP7267271B2 (ja) 2023-05-01
CN111279500B (zh) 2023-12-22
US10886464B2 (en) 2021-01-05
GB2582470A (en) 2020-09-23
CN111279500A (zh) 2020-06-12
GB2582470B (en) 2021-05-19
GB202007518D0 (en) 2020-07-01
WO2019087050A1 (en) 2019-05-09
US20190140171A1 (en) 2019-05-09

Similar Documents

Publication Publication Date Title
DE112018004630B4 (de) Selektives aufwachsen eines phasenänderungsmaterials in dielektrischen poren mit einem hohen aspektverhältnis für die fertigung von halbleitereinheiten
DE102008030419B4 (de) Verfahren zur Herstellung eines Phasenwechselspeichers mit konischem Heizelement
DE102019101188A1 (de) Gate-anordnungen in quantenpunktvorrichtungen
DE102008016522B4 (de) Phasenwechselspeicherzelle mit Phasenwechsel-Speichermaterial mit begrenztem Widerstand, Verfahren zur Herstellung einer deratigen Speicherzelle und integrierte Schaltung mit entsprechender Speicherzelle
DE10339070B4 (de) Herstellungsverfahren für einen Lateralen Phasenwechsel-Speicher
DE69931494T2 (de) Universales speicherelement und programmierverfahren
DE112017008044B4 (de) Vertikale supraleitende kondensatoren für transmon-qubits
DE112010003457B4 (de) Verfahren zur Herstellung einer Porenspeicherzelle mit vollständig amorphem Phasenwechsel
DE102019128996A1 (de) Integriertes schaltungsfinnenbelegungsverfahren, system und struktur
DE102019100124A1 (de) Gateanordnungen in Quantenpunkt-Vorrichtungen
DE102015207969A1 (de) Integrierbarer resistiver Speicher in Backend-Metallschichten
DE112013006523T5 (de) Eingebettete Magnettunnelkontakte umfassender Logikchip
DE112013007166B4 (de) Bewahrung von Umverteilungsleitungen feiner Teilung
DE112011101925T5 (de) Integration eines Phasenwechselspeicherprozesses mit einer Maske
DE102017117813A1 (de) System und verfahren zum herstellen eines layoutentwurfs einer integrierten schaltung
DE112018000142T5 (de) Integration eines abgegrenzten Phasenwechselspeichers mit bei einem Schwellenwert schaltendem Material
DE102020104126B4 (de) Verfahren zur erzeugung selbstausgerichteter heizelemente für pcram und entsprechende strukturen
DE102020132370A1 (de) Planare Platten-Vias für Integrierte-Schaltungs-Verbindungen
DE112010004406B4 (de) Phasenwechsel-Speichervorrichtung geeignet zum Betrieb bei hoher Temperatur und Verfahren zum Betreiben derselben
DE102020119280A1 (de) Platzbedarf für multi-bit-flip-flop
DE112021001020T5 (de) Phasenwechselspeicher mit mehrfachstapeln von pcm-materialien
DE102018208530A1 (de) Verfahren und Vorrichtung für eine verbesserte Ätzstoppschicht oder Hartmaskenschicht einer Speichervorrichtung
DE112021005520B4 (de) Nicht-flüchtige speicherzellen mit widerstands-drift-abschwächung und verfahren zur herstellung
DE102020109522A1 (de) Integrierter schaltkreis
DE102019116952A1 (de) Integrierte-schaltkreis-struktur, layout-schaubild-verfahren und system

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0045000000

Ipc: H10N0070000000