JP2010157700A5 - - Google Patents
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- Publication number
- JP2010157700A5 JP2010157700A5 JP2009269279A JP2009269279A JP2010157700A5 JP 2010157700 A5 JP2010157700 A5 JP 2010157700A5 JP 2009269279 A JP2009269279 A JP 2009269279A JP 2009269279 A JP2009269279 A JP 2009269279A JP 2010157700 A5 JP2010157700 A5 JP 2010157700A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical vapor
- vapor deposition
- nucleation layer
- semiconductor
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 9
- 238000005229 chemical vapour deposition Methods 0.000 claims 7
- 230000006911 nucleation Effects 0.000 claims 5
- 238000010899 nucleation Methods 0.000 claims 5
- 239000011231 conductive filler Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/347,721 US8236691B2 (en) | 2008-12-31 | 2008-12-31 | Method of high aspect ratio plug fill |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010157700A JP2010157700A (ja) | 2010-07-15 |
| JP2010157700A5 true JP2010157700A5 (enExample) | 2012-12-20 |
Family
ID=42221054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009269279A Pending JP2010157700A (ja) | 2008-12-31 | 2009-11-05 | 高アスペクト比プラグの充填方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8236691B2 (enExample) |
| JP (1) | JP2010157700A (enExample) |
| CN (1) | CN101770978B (enExample) |
| DE (1) | DE102009052393B8 (enExample) |
| TW (1) | TWI415218B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| JP6273257B2 (ja) * | 2012-03-27 | 2018-01-31 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | タングステンによるフィーチャ充填 |
| US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| CN104157562A (zh) * | 2014-08-26 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
| US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US9640482B1 (en) * | 2016-04-13 | 2017-05-02 | United Microelectronics Corp. | Semiconductor device with a contact plug and method of fabricating the same |
| KR102441431B1 (ko) * | 2016-06-06 | 2022-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 표면을 갖는 기판을 프로세싱 챔버에 포지셔닝하는 단계를 포함하는 프로세싱 방법 |
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| WO2019036292A1 (en) | 2017-08-14 | 2019-02-21 | Lam Research Corporation | METHOD FOR METAL CASTING FOR THREE-DIMENSIONAL NAND AND VERTICAL WORDS LINE |
| JP2021523292A (ja) | 2018-05-03 | 2021-09-02 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法 |
| KR102828798B1 (ko) | 2018-12-05 | 2025-07-02 | 램 리써치 코포레이션 | 보이드 프리 (void free) 저응력 (low stress) 충진 |
| CN113424300B (zh) | 2018-12-14 | 2025-05-09 | 朗姆研究公司 | 在3d nand结构上的原子层沉积 |
| SG11202108725XA (en) | 2019-02-13 | 2021-09-29 | Lam Res Corp | Tungsten feature fill with inhibition control |
| WO2020210260A1 (en) | 2019-04-11 | 2020-10-15 | Lam Research Corporation | High step coverage tungsten deposition |
| WO2020236749A1 (en) | 2019-05-22 | 2020-11-26 | Lam Research Corporation | Nucleation-free tungsten deposition |
| KR20220047333A (ko) | 2019-08-12 | 2022-04-15 | 램 리써치 코포레이션 | 텅스텐 증착 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
| JP3149887B2 (ja) * | 1991-11-08 | 2001-03-26 | 新日本製鐵株式会社 | スパッタ成膜方法及びスパッタ成膜装置 |
| JPH08191054A (ja) * | 1995-01-10 | 1996-07-23 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
| JPH08213610A (ja) * | 1995-02-07 | 1996-08-20 | Sony Corp | 電界効果型半導体装置及びその製造方法 |
| US5757879A (en) * | 1995-06-07 | 1998-05-26 | International Business Machines Corporation | Tungsten absorber for x-ray mask |
| US6406998B1 (en) * | 1996-02-05 | 2002-06-18 | Micron Technology, Inc. | Formation of silicided contact by ion implantation |
| JPH1064848A (ja) * | 1996-08-13 | 1998-03-06 | Toshiba Corp | 半導体装置の製造装置および製造方法 |
| US5918141A (en) * | 1997-06-20 | 1999-06-29 | National Semiconductor Corporation | Method of masking silicide deposition utilizing a photoresist mask |
| US6696746B1 (en) * | 1998-04-29 | 2004-02-24 | Micron Technology, Inc. | Buried conductors |
| KR100319681B1 (ko) * | 1998-12-02 | 2002-01-09 | 가네꼬 히사시 | 전계 효과 트랜지스터 및 그 제조 방법 |
| US6686278B2 (en) * | 2001-06-19 | 2004-02-03 | United Microelectronics Corp. | Method for forming a plug metal layer |
| TWI270180B (en) * | 2004-06-21 | 2007-01-01 | Powerchip Semiconductor Corp | Flash memory cell and manufacturing method thereof |
| ITMI20070446A1 (it) * | 2007-03-06 | 2008-09-07 | St Microelectronics Srl | Processo perfabbricare circuiti integrati formati su un substrato seminconduttore e comprendenti strati di tungsteno |
| US8372744B2 (en) * | 2007-04-20 | 2013-02-12 | International Business Machines Corporation | Fabricating a contact rhodium structure by electroplating and electroplating composition |
| KR20090074561A (ko) * | 2008-01-02 | 2009-07-07 | 주식회사 하이닉스반도체 | 반도체소자의 컨택 형성방법 |
| US20100065949A1 (en) * | 2008-09-17 | 2010-03-18 | Andreas Thies | Stacked Semiconductor Chips with Through Substrate Vias |
-
2008
- 2008-12-31 US US12/347,721 patent/US8236691B2/en active Active
-
2009
- 2009-11-05 JP JP2009269279A patent/JP2010157700A/ja active Pending
- 2009-11-09 DE DE102009052393.6A patent/DE102009052393B8/de active Active
- 2009-11-13 CN CN200910222342.7A patent/CN101770978B/zh active Active
- 2009-11-26 TW TW098140387A patent/TWI415218B/zh active
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