TWI415218B - 高縱橫比栓塞填充方法 - Google Patents
高縱橫比栓塞填充方法 Download PDFInfo
- Publication number
- TWI415218B TWI415218B TW098140387A TW98140387A TWI415218B TW I415218 B TWI415218 B TW I415218B TW 098140387 A TW098140387 A TW 098140387A TW 98140387 A TW98140387 A TW 98140387A TW I415218 B TWI415218 B TW I415218B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- nucleation
- sidewalls
- semiconductor
- hole
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000006911 nucleation Effects 0.000 claims abstract description 58
- 238000010899 nucleation Methods 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 13
- 239000011231 conductive filler Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- -1 borides Chemical class 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 150000004772 tellurides Chemical class 0.000 claims 1
- 239000000945 filler Substances 0.000 description 12
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 11
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 208000005189 Embolism Diseases 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910019044 CoSix Inorganic materials 0.000 description 1
- 229910005889 NiSix Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 1
- 230000003073 embolic effect Effects 0.000 description 1
- MWRJCEDXZKNABM-UHFFFAOYSA-N germanium tungsten Chemical compound [Ge].[W] MWRJCEDXZKNABM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/347,721 US8236691B2 (en) | 2008-12-31 | 2008-12-31 | Method of high aspect ratio plug fill |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201029112A TW201029112A (en) | 2010-08-01 |
| TWI415218B true TWI415218B (zh) | 2013-11-11 |
Family
ID=42221054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098140387A TWI415218B (zh) | 2008-12-31 | 2009-11-26 | 高縱橫比栓塞填充方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8236691B2 (enExample) |
| JP (1) | JP2010157700A (enExample) |
| CN (1) | CN101770978B (enExample) |
| DE (1) | DE102009052393B8 (enExample) |
| TW (1) | TWI415218B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| JP6273257B2 (ja) * | 2012-03-27 | 2018-01-31 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | タングステンによるフィーチャ充填 |
| US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| CN104157562A (zh) * | 2014-08-26 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
| US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US9640482B1 (en) * | 2016-04-13 | 2017-05-02 | United Microelectronics Corp. | Semiconductor device with a contact plug and method of fabricating the same |
| KR102441431B1 (ko) * | 2016-06-06 | 2022-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 표면을 갖는 기판을 프로세싱 챔버에 포지셔닝하는 단계를 포함하는 프로세싱 방법 |
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| WO2019036292A1 (en) | 2017-08-14 | 2019-02-21 | Lam Research Corporation | METHOD FOR METAL CASTING FOR THREE-DIMENSIONAL NAND AND VERTICAL WORDS LINE |
| JP2021523292A (ja) | 2018-05-03 | 2021-09-02 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法 |
| KR102828798B1 (ko) | 2018-12-05 | 2025-07-02 | 램 리써치 코포레이션 | 보이드 프리 (void free) 저응력 (low stress) 충진 |
| CN113424300B (zh) | 2018-12-14 | 2025-05-09 | 朗姆研究公司 | 在3d nand结构上的原子层沉积 |
| SG11202108725XA (en) | 2019-02-13 | 2021-09-29 | Lam Res Corp | Tungsten feature fill with inhibition control |
| WO2020210260A1 (en) | 2019-04-11 | 2020-10-15 | Lam Research Corporation | High step coverage tungsten deposition |
| WO2020236749A1 (en) | 2019-05-22 | 2020-11-26 | Lam Research Corporation | Nucleation-free tungsten deposition |
| KR20220047333A (ko) | 2019-08-12 | 2022-04-15 | 램 리써치 코포레이션 | 텅스텐 증착 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757879A (en) * | 1995-06-07 | 1998-05-26 | International Business Machines Corporation | Tungsten absorber for x-ray mask |
| US6180513B1 (en) * | 1996-08-13 | 2001-01-30 | Kabushiki Kaisha Toshiba | Apparatus and method for manufacturing a semiconductor device having a multi-wiring layer structure |
| US20060033181A1 (en) * | 1998-04-29 | 2006-02-16 | Micron Technology, Inc. | Buried conductors |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
| JP3149887B2 (ja) * | 1991-11-08 | 2001-03-26 | 新日本製鐵株式会社 | スパッタ成膜方法及びスパッタ成膜装置 |
| JPH08191054A (ja) * | 1995-01-10 | 1996-07-23 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
| JPH08213610A (ja) * | 1995-02-07 | 1996-08-20 | Sony Corp | 電界効果型半導体装置及びその製造方法 |
| US6406998B1 (en) * | 1996-02-05 | 2002-06-18 | Micron Technology, Inc. | Formation of silicided contact by ion implantation |
| US5918141A (en) * | 1997-06-20 | 1999-06-29 | National Semiconductor Corporation | Method of masking silicide deposition utilizing a photoresist mask |
| KR100319681B1 (ko) * | 1998-12-02 | 2002-01-09 | 가네꼬 히사시 | 전계 효과 트랜지스터 및 그 제조 방법 |
| US6686278B2 (en) * | 2001-06-19 | 2004-02-03 | United Microelectronics Corp. | Method for forming a plug metal layer |
| TWI270180B (en) * | 2004-06-21 | 2007-01-01 | Powerchip Semiconductor Corp | Flash memory cell and manufacturing method thereof |
| ITMI20070446A1 (it) * | 2007-03-06 | 2008-09-07 | St Microelectronics Srl | Processo perfabbricare circuiti integrati formati su un substrato seminconduttore e comprendenti strati di tungsteno |
| US8372744B2 (en) * | 2007-04-20 | 2013-02-12 | International Business Machines Corporation | Fabricating a contact rhodium structure by electroplating and electroplating composition |
| KR20090074561A (ko) * | 2008-01-02 | 2009-07-07 | 주식회사 하이닉스반도체 | 반도체소자의 컨택 형성방법 |
| US20100065949A1 (en) * | 2008-09-17 | 2010-03-18 | Andreas Thies | Stacked Semiconductor Chips with Through Substrate Vias |
-
2008
- 2008-12-31 US US12/347,721 patent/US8236691B2/en active Active
-
2009
- 2009-11-05 JP JP2009269279A patent/JP2010157700A/ja active Pending
- 2009-11-09 DE DE102009052393.6A patent/DE102009052393B8/de active Active
- 2009-11-13 CN CN200910222342.7A patent/CN101770978B/zh active Active
- 2009-11-26 TW TW098140387A patent/TWI415218B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757879A (en) * | 1995-06-07 | 1998-05-26 | International Business Machines Corporation | Tungsten absorber for x-ray mask |
| US6180513B1 (en) * | 1996-08-13 | 2001-01-30 | Kabushiki Kaisha Toshiba | Apparatus and method for manufacturing a semiconductor device having a multi-wiring layer structure |
| US20060033181A1 (en) * | 1998-04-29 | 2006-02-16 | Micron Technology, Inc. | Buried conductors |
Also Published As
| Publication number | Publication date |
|---|---|
| US8236691B2 (en) | 2012-08-07 |
| TW201029112A (en) | 2010-08-01 |
| DE102009052393B4 (de) | 2017-11-16 |
| CN101770978B (zh) | 2014-04-16 |
| DE102009052393A1 (de) | 2010-07-01 |
| JP2010157700A (ja) | 2010-07-15 |
| DE102009052393B8 (de) | 2018-02-08 |
| US20100167532A1 (en) | 2010-07-01 |
| CN101770978A (zh) | 2010-07-07 |
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