JP2011526733A5 - - Google Patents

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JP2011526733A5
JP2011526733A5 JP2011502123A JP2011502123A JP2011526733A5 JP 2011526733 A5 JP2011526733 A5 JP 2011526733A5 JP 2011502123 A JP2011502123 A JP 2011502123A JP 2011502123 A JP2011502123 A JP 2011502123A JP 2011526733 A5 JP2011526733 A5 JP 2011526733A5
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JP
Japan
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epitaxial layer
electrode
emitting diode
light emitting
diode according
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JP2011502123A
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English (en)
Japanese (ja)
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JP5688008B2 (ja
JP2011526733A (ja
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Priority claimed from US12/120,051 external-priority patent/US7781780B2/en
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JP2011502123A 2008-03-31 2009-03-27 発光ダイオードの製造方法 Active JP5688008B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4117208P 2008-03-31 2008-03-31
US61/041,172 2008-03-31
US12/120,051 US7781780B2 (en) 2008-03-31 2008-05-13 Light emitting diodes with smooth surface for reflective electrode
US12/120,051 2008-05-13
PCT/US2009/038695 WO2009123936A2 (en) 2008-03-31 2009-03-27 Light emitting diodes with smooth surface for reflective electrode

Related Child Applications (1)

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JP2013257878A Division JP2014064034A (ja) 2008-03-31 2013-12-13 発光ダイオード

Publications (3)

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JP2011526733A JP2011526733A (ja) 2011-10-13
JP2011526733A5 true JP2011526733A5 (enExample) 2012-05-24
JP5688008B2 JP5688008B2 (ja) 2015-03-25

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JP2011502123A Active JP5688008B2 (ja) 2008-03-31 2009-03-27 発光ダイオードの製造方法
JP2013257878A Pending JP2014064034A (ja) 2008-03-31 2013-12-13 発光ダイオード

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JP2013257878A Pending JP2014064034A (ja) 2008-03-31 2013-12-13 発光ダイオード

Country Status (8)

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US (5) US7781780B2 (enExample)
EP (1) EP2257985A4 (enExample)
JP (2) JP5688008B2 (enExample)
KR (1) KR101287365B1 (enExample)
CN (1) CN102150272B (enExample)
MY (1) MY159231A (enExample)
TW (1) TWI413278B (enExample)
WO (1) WO2009123936A2 (enExample)

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