MY159231A - Light emitting diodes with smooth surface for reflective electrode - Google Patents
Light emitting diodes with smooth surface for reflective electrodeInfo
- Publication number
- MY159231A MY159231A MYPI2010003460A MYPI2010003460A MY159231A MY 159231 A MY159231 A MY 159231A MY PI2010003460 A MYPI2010003460 A MY PI2010003460A MY PI2010003460 A MYPI2010003460 A MY PI2010003460A MY 159231 A MY159231 A MY 159231A
- Authority
- MY
- Malaysia
- Prior art keywords
- light emitting
- emitting diodes
- smooth surface
- reflective electrode
- electrode
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4117208P | 2008-03-31 | 2008-03-31 | |
| US12/120,051 US7781780B2 (en) | 2008-03-31 | 2008-05-13 | Light emitting diodes with smooth surface for reflective electrode |
| PCT/US2009/038695 WO2009123936A2 (en) | 2008-03-31 | 2009-03-27 | Light emitting diodes with smooth surface for reflective electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY159231A true MY159231A (en) | 2016-12-30 |
Family
ID=41115742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2010003460A MY159231A (en) | 2008-03-31 | 2010-07-21 | Light emitting diodes with smooth surface for reflective electrode |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US7781780B2 (enExample) |
| EP (1) | EP2257985A4 (enExample) |
| JP (2) | JP5688008B2 (enExample) |
| KR (1) | KR101287365B1 (enExample) |
| CN (1) | CN102150272B (enExample) |
| MY (1) | MY159231A (enExample) |
| TW (1) | TWI413278B (enExample) |
| WO (1) | WO2009123936A2 (enExample) |
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| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| WO2008088838A1 (en) | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US7781780B2 (en) | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
| JP4486701B1 (ja) | 2008-11-06 | 2010-06-23 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
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-
2008
- 2008-05-13 US US12/120,051 patent/US7781780B2/en active Active
-
2009
- 2009-03-27 KR KR1020107017809A patent/KR101287365B1/ko active Active
- 2009-03-27 JP JP2011502123A patent/JP5688008B2/ja active Active
- 2009-03-27 WO PCT/US2009/038695 patent/WO2009123936A2/en not_active Ceased
- 2009-03-27 CN CN200980110389.2A patent/CN102150272B/zh not_active Expired - Fee Related
- 2009-03-27 EP EP09728731.2A patent/EP2257985A4/en not_active Withdrawn
- 2009-03-31 TW TW098110700A patent/TWI413278B/zh active
-
2010
- 2010-07-12 US US12/834,747 patent/US8163578B2/en active Active
- 2010-07-21 MY MYPI2010003460A patent/MY159231A/en unknown
-
2011
- 2011-02-23 US US13/033,533 patent/US8168984B2/en active Active
-
2012
- 2012-04-16 US US13/447,574 patent/US8691606B2/en active Active
-
2013
- 2013-11-20 US US14/085,581 patent/US9437776B2/en active Active
- 2013-12-13 JP JP2013257878A patent/JP2014064034A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2257985A4 (en) | 2015-04-22 |
| WO2009123936A3 (en) | 2009-12-30 |
| CN102150272A (zh) | 2011-08-10 |
| US8168984B2 (en) | 2012-05-01 |
| US7781780B2 (en) | 2010-08-24 |
| US20090242924A1 (en) | 2009-10-01 |
| US8691606B2 (en) | 2014-04-08 |
| US20130102095A1 (en) | 2013-04-25 |
| JP5688008B2 (ja) | 2015-03-25 |
| WO2009123936A2 (en) | 2009-10-08 |
| US9437776B2 (en) | 2016-09-06 |
| KR101287365B1 (ko) | 2013-07-18 |
| EP2257985A2 (en) | 2010-12-08 |
| US20110008923A1 (en) | 2011-01-13 |
| TW200941774A (en) | 2009-10-01 |
| CN102150272B (zh) | 2015-03-11 |
| US8163578B2 (en) | 2012-04-24 |
| JP2011526733A (ja) | 2011-10-13 |
| JP2014064034A (ja) | 2014-04-10 |
| TWI413278B (zh) | 2013-10-21 |
| US20110140125A1 (en) | 2011-06-16 |
| US20140080234A1 (en) | 2014-03-20 |
| KR20100123686A (ko) | 2010-11-24 |
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