CN102150272B - 具供设置反射性电极的平滑表面的发光二极管 - Google Patents

具供设置反射性电极的平滑表面的发光二极管 Download PDF

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Publication number
CN102150272B
CN102150272B CN200980110389.2A CN200980110389A CN102150272B CN 102150272 B CN102150272 B CN 102150272B CN 200980110389 A CN200980110389 A CN 200980110389A CN 102150272 B CN102150272 B CN 102150272B
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electrode
epitaxial loayer
light
group
methods according
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Expired - Fee Related
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Chinese (zh)
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CN102150272A (zh
Inventor
林朝坤
刘恒
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Toshiba Corp
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Manutius IP Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1701—Structure
    • H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials

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CN200980110389.2A 2008-03-31 2009-03-27 具供设置反射性电极的平滑表面的发光二极管 Expired - Fee Related CN102150272B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4117208P 2008-03-31 2008-03-31
US61/041,172 2008-03-31
US12/120,051 2008-05-13
US12/120,051 US7781780B2 (en) 2008-03-31 2008-05-13 Light emitting diodes with smooth surface for reflective electrode
PCT/US2009/038695 WO2009123936A2 (en) 2008-03-31 2009-03-27 Light emitting diodes with smooth surface for reflective electrode

Publications (2)

Publication Number Publication Date
CN102150272A CN102150272A (zh) 2011-08-10
CN102150272B true CN102150272B (zh) 2015-03-11

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CN200980110389.2A Expired - Fee Related CN102150272B (zh) 2008-03-31 2009-03-27 具供设置反射性电极的平滑表面的发光二极管

Country Status (8)

Country Link
US (5) US7781780B2 (enExample)
EP (1) EP2257985A4 (enExample)
JP (2) JP5688008B2 (enExample)
KR (1) KR101287365B1 (enExample)
CN (1) CN102150272B (enExample)
MY (1) MY159231A (enExample)
TW (1) TWI413278B (enExample)
WO (1) WO2009123936A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7641735B2 (en) 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
KR101139142B1 (ko) 2008-11-06 2012-04-26 파나소닉 주식회사 질화물계 반도체 소자 및 그 제조 방법
JP4676577B2 (ja) * 2009-04-06 2011-04-27 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP2010251390A (ja) * 2009-04-13 2010-11-04 Oki Electric Ind Co Ltd 発光ダイオード及びその製造方法
KR101712094B1 (ko) * 2009-11-27 2017-03-03 포항공과대학교 산학협력단 질화물갈륨계 수직 발광다이오드 및 그 제조 방법
KR101171722B1 (ko) * 2009-12-25 2012-08-06 파나소닉 주식회사 질화물계 반도체 소자 및 그의 제조방법
CN102194947B (zh) * 2010-03-17 2015-11-25 Lg伊诺特有限公司 发光器件和发光器件封装
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
JP5593163B2 (ja) * 2010-08-18 2014-09-17 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
KR101842586B1 (ko) * 2011-04-05 2018-03-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR101873476B1 (ko) 2011-04-11 2018-07-03 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
CN102269534B (zh) * 2011-07-25 2012-11-28 天津空中代码工程应用软件开发有限公司 一种旋流式热导管
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US9847372B2 (en) 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
KR102005236B1 (ko) * 2012-07-05 2019-07-31 삼성전자주식회사 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자
US8748202B2 (en) 2012-09-14 2014-06-10 Bridgelux, Inc. Substrate free LED package
US9287449B2 (en) 2013-01-09 2016-03-15 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US10276749B2 (en) 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
JP6275817B2 (ja) * 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
CN105374906A (zh) * 2014-08-26 2016-03-02 广东量晶光电科技有限公司 一种led芯片及其制备方法
CN104319343B (zh) * 2014-10-29 2017-03-08 华灿光电股份有限公司 一种白光led的制作方法及白光led
TWI568016B (zh) * 2014-12-23 2017-01-21 錼創科技股份有限公司 半導體發光元件
BR112018000603A2 (pt) 2015-07-13 2018-09-11 Crayonano As fotodetetores e diodos emitindo luz com forma de nanofios/nanopirâmides
BR112018001815A2 (pt) 2015-07-31 2018-09-18 Crayonano As processo para cultivar nanofios ou nanopirâmides em substratos grafíticos
EP3350844B1 (en) * 2015-09-17 2021-10-27 Crystal Is, Inc. Ultraviolet light-emitting devices incorporating two-dimensional hole gases
WO2019047092A1 (zh) * 2017-09-07 2019-03-14 苏州晶湛半导体有限公司 发光器件表面粗化的方法与发光器件
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter
TWI866707B (zh) * 2022-04-29 2024-12-11 晶元光電股份有限公司 半導體發光元件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050173715A1 (en) * 2003-03-05 2005-08-11 Takashi Kyono Nitride semiconductor devices and method of their manufacture
US20050189551A1 (en) * 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same
EP1746641A1 (en) * 2005-03-15 2007-01-24 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor device and epitaxial substrate
US20070096121A1 (en) * 2005-10-28 2007-05-03 Ni Ying C Light emitting diode and method for manufacturing the same
US20070221907A1 (en) * 2006-03-21 2007-09-27 Lg Electronics Inc. Light emitting device having vertical structure and mehod for manufacturing the same

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055678A (ja) 1983-09-06 1985-03-30 Nec Corp 発光ダイオ−ド
JPH08115877A (ja) * 1994-10-17 1996-05-07 Sony Corp 半導体エピタキシャル成長方法
JPH104208A (ja) * 1996-06-14 1998-01-06 Omron Corp 面発光型半導体発光素子
JPH1140851A (ja) * 1997-07-15 1999-02-12 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
TW418549B (en) * 1998-06-26 2001-01-11 Sharp Kk Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
JP3965203B2 (ja) * 1998-06-26 2007-08-29 シャープ株式会社 窒化物系化合物半導体発光素子
DE60041742D1 (de) * 1999-02-26 2009-04-23 Furukawa Electric Co Ltd Halbleiterlaser
US6639354B1 (en) 1999-07-23 2003-10-28 Sony Corporation Light emitting device, production method thereof, and light emitting apparatus and display unit using the same
JP4282173B2 (ja) * 1999-09-03 2009-06-17 シャープ株式会社 窒素化合物半導体発光素子およびその製造方法
JP2001196702A (ja) 2000-01-11 2001-07-19 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6515417B1 (en) 2000-01-27 2003-02-04 General Electric Company Organic light emitting device and method for mounting
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP3531865B2 (ja) 2000-07-06 2004-05-31 独立行政法人 科学技術振興機構 超平坦透明導電膜およびその製造方法
JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
JP4178836B2 (ja) * 2002-05-29 2008-11-12 ソニー株式会社 窒化ガリウム系半導体素子及びその製造方法
JP4493902B2 (ja) 2002-10-15 2010-06-30 大阪府 透明導電膜の製造方法
WO2004106987A2 (en) 2003-05-29 2004-12-09 Applied Materials, Inc. Impurity-based waveguide detectors
KR100483049B1 (ko) * 2003-06-03 2005-04-15 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드의 제조방법
KR20110042249A (ko) * 2003-06-04 2011-04-25 유명철 수직 구조 화합물 반도체 디바이스의 제조 방법
JP2005112641A (ja) * 2003-10-03 2005-04-28 Sumitomo Electric Ind Ltd 窒化物半導体基板および窒化物半導体基板の製造方法
US7148149B2 (en) * 2003-12-24 2006-12-12 Matsushita Electric Industrial Co., Ltd. Method for fabricating nitride-based compound semiconductor element
JP4438422B2 (ja) * 2004-01-20 2010-03-24 日亜化学工業株式会社 半導体発光素子
EP1708284B1 (en) * 2004-01-20 2017-03-29 Nichia Corporation Semiconductor light-emitting device
US20050285128A1 (en) * 2004-02-10 2005-12-29 California Institute Of Technology Surface plasmon light emitter structure and method of manufacture
US7569863B2 (en) 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
JP4452607B2 (ja) * 2004-03-05 2010-04-21 順一 島田 照明装置、フィルタ装置、画像表示装置
KR100634503B1 (ko) * 2004-03-12 2006-10-16 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
JP4996463B2 (ja) 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
TWI299914B (en) 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
JP2006073619A (ja) * 2004-08-31 2006-03-16 Sharp Corp 窒化物系化合物半導体発光素子
US7849381B2 (en) 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
EP1681712A1 (en) * 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of producing substrates for optoelectronic applications
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
CN100372137C (zh) * 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
US7863630B2 (en) * 2005-07-05 2011-01-04 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
JP2007088351A (ja) 2005-09-26 2007-04-05 Hitachi Cable Ltd 発光ダイオード用エピタキシャルウェハおよび発光ダイオード
JP2007109713A (ja) 2005-10-11 2007-04-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
KR100721150B1 (ko) 2005-11-24 2007-05-22 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
KR101115533B1 (ko) * 2005-11-25 2012-03-08 서울옵토디바이스주식회사 플립칩 구조의 발광 소자 및 이의 제조 방법
WO2007073001A1 (en) * 2005-12-22 2007-06-28 Showa Denko K.K. Light-emitting diode and method for fabricant thereof
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
JP5110804B2 (ja) 2006-03-24 2012-12-26 日本エレクトロプレイテイング・エンジニヤース株式会社 Ｌｅｄの製造方法
US7615789B2 (en) * 2006-05-09 2009-11-10 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode device structure
CN100452460C (zh) 2006-05-29 2009-01-14 金芃 通孔垂直结构的半导体芯片及其制造方法
JP2008010835A (ja) * 2006-05-31 2008-01-17 Sumitomo Electric Ind Ltd 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
JP4946195B2 (ja) 2006-06-19 2012-06-06 サンケン電気株式会社 半導体発光素子及びその製造方法
WO2008105804A2 (en) * 2006-07-18 2008-09-04 The University Of Southern California Organic optoelectronic device electrodes with nanotubes
TWI369009B (en) * 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
US8692286B2 (en) * 2007-12-14 2014-04-08 Philips Lumileds Lighing Company LLC Light emitting device with bonded interface
US7598105B2 (en) * 2007-12-21 2009-10-06 Tekcore Co., Ltd. Light emitting diode structure and method for fabricating the same
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050173715A1 (en) * 2003-03-05 2005-08-11 Takashi Kyono Nitride semiconductor devices and method of their manufacture
US20050189551A1 (en) * 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same
EP1746641A1 (en) * 2005-03-15 2007-01-24 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor device and epitaxial substrate
US20070096121A1 (en) * 2005-10-28 2007-05-03 Ni Ying C Light emitting diode and method for manufacturing the same
US20070221907A1 (en) * 2006-03-21 2007-09-27 Lg Electronics Inc. Light emitting device having vertical structure and mehod for manufacturing the same

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US20140080234A1 (en) 2014-03-20
WO2009123936A3 (en) 2009-12-30
CN102150272A (zh) 2011-08-10
KR20100123686A (ko) 2010-11-24
MY159231A (en) 2016-12-30
US7781780B2 (en) 2010-08-24
JP2014064034A (ja) 2014-04-10
US8163578B2 (en) 2012-04-24
US20110008923A1 (en) 2011-01-13
TWI413278B (zh) 2013-10-21
US20130102095A1 (en) 2013-04-25
US20110140125A1 (en) 2011-06-16
TW200941774A (en) 2009-10-01
US9437776B2 (en) 2016-09-06
WO2009123936A2 (en) 2009-10-08
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JP2011526733A (ja) 2011-10-13
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US8168984B2 (en) 2012-05-01
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KR101287365B1 (ko) 2013-07-18

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