JP2009027157A5 - - Google Patents
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- Publication number
- JP2009027157A5 JP2009027157A5 JP2008163376A JP2008163376A JP2009027157A5 JP 2009027157 A5 JP2009027157 A5 JP 2009027157A5 JP 2008163376 A JP2008163376 A JP 2008163376A JP 2008163376 A JP2008163376 A JP 2008163376A JP 2009027157 A5 JP2009027157 A5 JP 2009027157A5
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- layer
- hole
- nanotube
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 17
- 239000007769 metal material Substances 0.000 claims 13
- 239000011810 insulating material Substances 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 6
- 239000002071 nanotube Substances 0.000 claims 6
- 239000003054 catalyst Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002041 carbon nanotube Substances 0.000 claims 1
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0704464A FR2917893B1 (fr) | 2007-06-22 | 2007-06-22 | Procede de fabrication d'une connexion electrique a base de nanotubes de carbone |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009027157A JP2009027157A (ja) | 2009-02-05 |
| JP2009027157A5 true JP2009027157A5 (enExample) | 2011-07-28 |
Family
ID=38754704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008163376A Pending JP2009027157A (ja) | 2007-06-22 | 2008-06-23 | カーボンナノチューブベースの電気的接続の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20080317947A1 (enExample) |
| EP (1) | EP2006901A3 (enExample) |
| JP (1) | JP2009027157A (enExample) |
| FR (1) | FR2917893B1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7989349B2 (en) * | 2005-04-15 | 2011-08-02 | Micron Technology, Inc. | Methods of manufacturing nanotubes having controlled characteristics |
| US9099537B2 (en) * | 2009-08-28 | 2015-08-04 | International Business Machines Corporation | Selective nanotube growth inside vias using an ion beam |
| JP2011061026A (ja) * | 2009-09-10 | 2011-03-24 | Toshiba Corp | カーボンナノチューブ配線及びその製造方法 |
| JP5395708B2 (ja) * | 2010-03-09 | 2014-01-22 | 東京エレクトロン株式会社 | 基板の配線方法及び半導体製造装置 |
| JP5238775B2 (ja) * | 2010-08-25 | 2013-07-17 | 株式会社東芝 | カーボンナノチューブ配線の製造方法 |
| JP5920808B2 (ja) * | 2010-08-29 | 2016-05-18 | 学校法人 芝浦工業大学 | 配線パターンの形成方法 |
| US9607955B2 (en) * | 2010-11-10 | 2017-03-28 | Cree, Inc. | Contact pad |
| CN102543835B (zh) * | 2010-12-15 | 2015-05-13 | 中国科学院微电子研究所 | 开口的填充方法 |
| JP5813682B2 (ja) * | 2013-03-08 | 2015-11-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
| KR101750795B1 (ko) * | 2013-06-27 | 2017-06-26 | 인텔 아이피 코포레이션 | 전자 시스템을 위한 고 전도성 고 주파수 비아 |
| US11527476B2 (en) * | 2020-09-11 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure of semiconductor device |
| US12322649B2 (en) | 2020-09-11 | 2025-06-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure of semiconductor device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2262654B (en) * | 1991-12-13 | 1995-07-12 | Marconi Gec Ltd | Fabrication process |
| JP3189970B2 (ja) * | 1998-09-07 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP4023955B2 (ja) * | 1999-07-08 | 2007-12-19 | 株式会社荏原製作所 | 半導体装置の製造方法 |
| DE10006964C2 (de) * | 2000-02-16 | 2002-01-31 | Infineon Technologies Ag | Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements |
| US6787460B2 (en) * | 2002-01-14 | 2004-09-07 | Samsung Electronics Co., Ltd. | Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed |
| US6933222B2 (en) * | 2003-01-02 | 2005-08-23 | Intel Corporation | Microcircuit fabrication and interconnection |
| JP4774665B2 (ja) * | 2003-02-05 | 2011-09-14 | ソニー株式会社 | 半導体装置の製造方法 |
| US7374793B2 (en) * | 2003-12-11 | 2008-05-20 | International Business Machines Corporation | Methods and structures for promoting stable synthesis of carbon nanotubes |
| US7135773B2 (en) * | 2004-02-26 | 2006-11-14 | International Business Machines Corporation | Integrated circuit chip utilizing carbon nanotube composite interconnection vias |
| JP4448356B2 (ja) * | 2004-03-26 | 2010-04-07 | 富士通株式会社 | 半導体装置およびその製造方法 |
| US7129097B2 (en) * | 2004-07-29 | 2006-10-31 | International Business Machines Corporation | Integrated circuit chip utilizing oriented carbon nanotube conductive layers |
| JP5045103B2 (ja) * | 2004-10-22 | 2012-10-10 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| JP2006148063A (ja) * | 2004-10-22 | 2006-06-08 | Renesas Technology Corp | 配線構造、半導体装置、ｍｒａｍおよび半導体装置の製造方法 |
| KR100718112B1 (ko) * | 2005-11-02 | 2007-05-14 | 삼성에스디아이 주식회사 | 탄소나노튜브를 이용한 수직 배선구조 및 그 제조방법 |
| FR2910706B1 (fr) * | 2006-12-21 | 2009-03-20 | Commissariat Energie Atomique | Element d'interconnexion a base de nanotubes de carbone |
-
2007
- 2007-06-22 FR FR0704464A patent/FR2917893B1/fr not_active Expired - Fee Related
-
2008
- 2008-06-17 EP EP08354040A patent/EP2006901A3/fr not_active Withdrawn
- 2008-06-17 US US12/213,275 patent/US20080317947A1/en not_active Abandoned
- 2008-06-23 JP JP2008163376A patent/JP2009027157A/ja active Pending
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