JP2013504886A5 - - Google Patents
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- JP2013504886A5 JP2013504886A5 JP2012529193A JP2012529193A JP2013504886A5 JP 2013504886 A5 JP2013504886 A5 JP 2013504886A5 JP 2012529193 A JP2012529193 A JP 2012529193A JP 2012529193 A JP2012529193 A JP 2012529193A JP 2013504886 A5 JP2013504886 A5 JP 2013504886A5
- Authority
- JP
- Japan
- Prior art keywords
- opening
- conductive
- forming
- plating seed
- seed layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/560,878 US7956463B2 (en) | 2009-09-16 | 2009-09-16 | Large grain size conductive structure for narrow interconnect openings |
| US12/560,878 | 2009-09-16 | ||
| PCT/EP2010/062407 WO2011032812A1 (en) | 2009-09-16 | 2010-08-25 | Conductive structure for narrow interconnect openings |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013504886A JP2013504886A (ja) | 2013-02-07 |
| JP2013504886A5 true JP2013504886A5 (enExample) | 2013-10-03 |
| JP5444471B2 JP5444471B2 (ja) | 2014-03-19 |
Family
ID=43064611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012529193A Expired - Fee Related JP5444471B2 (ja) | 2009-09-16 | 2010-08-25 | 相互接続構造およびこれを形成する方法(細い相互接続開口のための導電性構造) |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7956463B2 (enExample) |
| JP (1) | JP5444471B2 (enExample) |
| CN (1) | CN102498560A (enExample) |
| DE (1) | DE112010003659T5 (enExample) |
| GB (1) | GB2485689B (enExample) |
| TW (1) | TWI497673B (enExample) |
| WO (1) | WO2011032812A1 (enExample) |
Families Citing this family (45)
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| JP5353109B2 (ja) | 2008-08-15 | 2013-11-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5853351B2 (ja) * | 2010-03-25 | 2016-02-09 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
| US8661664B2 (en) | 2010-07-19 | 2014-03-04 | International Business Machines Corporation | Techniques for forming narrow copper filled vias having improved conductivity |
| CN102790009B (zh) * | 2011-05-16 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 降低铜电镀工艺中边缘效应的方法及铜互连结构制造方法 |
| US8637400B2 (en) | 2011-06-21 | 2014-01-28 | International Business Machines Corporation | Interconnect structures and methods for back end of the line integration |
| US8492897B2 (en) * | 2011-09-14 | 2013-07-23 | International Business Machines Corporation | Microstructure modification in copper interconnect structures |
| US8648465B2 (en) | 2011-09-28 | 2014-02-11 | International Business Machines Corporation | Semiconductor interconnect structure having enhanced performance and reliability |
| CN103117245A (zh) * | 2011-11-17 | 2013-05-22 | 盛美半导体设备(上海)有限公司 | 空气隙互联结构的形成方法 |
| US9190323B2 (en) | 2012-01-19 | 2015-11-17 | GlobalFoundries, Inc. | Semiconductor devices with copper interconnects and methods for fabricating same |
| JP6360276B2 (ja) * | 2012-03-08 | 2018-07-18 | 東京エレクトロン株式会社 | 半導体装置、半導体装置の製造方法、半導体製造装置 |
| US8836124B2 (en) * | 2012-03-08 | 2014-09-16 | International Business Machines Corporation | Fuse and integrated conductor |
| CN102664193A (zh) * | 2012-04-01 | 2012-09-12 | 京东方科技集团股份有限公司 | 导电结构及制造方法、薄膜晶体管、阵列基板和显示装置 |
| DE102012210480B4 (de) * | 2012-06-21 | 2024-05-08 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Bauelements mit einer elektrischen Durchkontaktierung |
| US8722534B2 (en) | 2012-07-30 | 2014-05-13 | Globalfoundries Inc. | Method for reducing wettability of interconnect material at corner interface and device incorporating same |
| US9514983B2 (en) * | 2012-12-28 | 2016-12-06 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
| US10032712B2 (en) | 2013-03-15 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor structure |
| DE102013104464B4 (de) * | 2013-03-15 | 2019-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleiterstruktur |
| CN104103573B (zh) * | 2013-04-02 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US9997457B2 (en) | 2013-12-20 | 2018-06-12 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
| US9184134B2 (en) * | 2014-01-23 | 2015-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device structure |
| CN104952786B (zh) * | 2014-03-25 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 电互连结构及其形成方法 |
| DE102014109352B4 (de) * | 2014-04-30 | 2019-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zusammengesetzte kontaktstöpsel-struktur und verfahren zur herstellung |
| US10079174B2 (en) | 2014-04-30 | 2018-09-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite contact plug structure and method of making same |
| CN105097648B (zh) * | 2014-05-04 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的形成方法 |
| US9613907B2 (en) | 2014-07-29 | 2017-04-04 | Samsung Electronics Co., Ltd. | Low resistivity damascene interconnect |
| US9536826B1 (en) | 2015-06-15 | 2017-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (finFET) device structure with interconnect structure |
| US10332790B2 (en) | 2015-06-15 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure with interconnect structure |
| DE102015110437B4 (de) * | 2015-06-29 | 2020-10-08 | Infineon Technologies Ag | Halbleitervorrichtung mit einer Metallstruktur, die mit einer leitfähigen Struktur elektrisch verbunden ist und Verfahren zur Herstellung |
| US9613856B1 (en) * | 2015-09-18 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming metal interconnection |
| US10461026B2 (en) | 2016-06-30 | 2019-10-29 | International Business Machines Corporation | Techniques to improve reliability in Cu interconnects using Cu intermetallics |
| US9748173B1 (en) * | 2016-07-06 | 2017-08-29 | International Business Machines Corporation | Hybrid interconnects and method of forming the same |
| KR102680860B1 (ko) * | 2016-09-05 | 2024-07-03 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR102624631B1 (ko) | 2016-12-02 | 2024-01-12 | 삼성전자주식회사 | 반도체 장치 |
| US10354969B2 (en) * | 2017-07-31 | 2019-07-16 | Advanced Semiconductor Engineering, Inc. | Substrate structure, semiconductor package including the same, and method for manufacturing the same |
| US10763207B2 (en) | 2017-11-21 | 2020-09-01 | Samsung Electronics Co., Ltd. | Interconnects having long grains and methods of manufacturing the same |
| US10651084B1 (en) * | 2019-07-18 | 2020-05-12 | Micron Technology, Inc. | Microelectronic devices comprising manganese-containing conductive structures, and related electronic systems and methods |
| KR102808645B1 (ko) | 2019-08-23 | 2025-05-16 | 삼성전자주식회사 | 반도체 소자 |
| US11205589B2 (en) * | 2019-10-06 | 2021-12-21 | Applied Materials, Inc. | Methods and apparatuses for forming interconnection structures |
| US11551967B2 (en) * | 2020-05-19 | 2023-01-10 | Taiwan Semiconductor Manufacturing Company Limited | Via structure and methods for forming the same |
| CN113871344B (zh) * | 2020-06-30 | 2025-03-28 | 长鑫存储技术有限公司 | 半导体器件及半导体器件的形成方法 |
| US11742290B2 (en) | 2021-03-10 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure and method of forming thereof |
| US11682675B2 (en) | 2021-03-30 | 2023-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field-effect transistor device and method |
| US12374583B2 (en) * | 2021-05-12 | 2025-07-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices and methods of manufacture |
| CN114551399A (zh) * | 2022-02-17 | 2022-05-27 | 华虹半导体(无锡)有限公司 | 半导体结构及其形成方法 |
| DE102023134996A1 (de) * | 2023-12-13 | 2025-06-18 | Infineon Technologies Ag | Metallgefülltes kontaktloch in mikrogefertigter vorrichtung |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307267B1 (en) * | 1997-12-26 | 2001-10-23 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
| US7244677B2 (en) * | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
| US6319728B1 (en) * | 1998-06-05 | 2001-11-20 | Applied Materials, Inc. | Method for treating a deposited film for resistivity reduction |
| TW444238B (en) * | 1998-08-11 | 2001-07-01 | Toshiba Corp | A method of making thin film |
| US6126806A (en) * | 1998-12-02 | 2000-10-03 | International Business Machines Corporation | Enhancing copper electromigration resistance with indium and oxygen lamination |
| US6242349B1 (en) * | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
| US6096648A (en) * | 1999-01-26 | 2000-08-01 | Amd | Copper/low dielectric interconnect formation with reduced electromigration |
| US6610151B1 (en) * | 1999-10-02 | 2003-08-26 | Uri Cohen | Seed layers for interconnects and methods and apparatus for their fabrication |
| US6228759B1 (en) * | 2000-05-02 | 2001-05-08 | Advanced Micro Devices, Inc. | Method of forming an alloy precipitate to surround interconnect to minimize electromigration |
| US6429523B1 (en) * | 2001-01-04 | 2002-08-06 | International Business Machines Corp. | Method for forming interconnects on semiconductor substrates and structures formed |
| US6506668B1 (en) * | 2001-06-22 | 2003-01-14 | Advanced Micro Devices, Inc. | Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability |
| AU2003266560A1 (en) * | 2002-12-09 | 2004-06-30 | Yoshihiro Hayashi | Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device |
| US7122466B2 (en) * | 2003-07-28 | 2006-10-17 | Texas Instruments Incorporated | Two step semiconductor manufacturing process for copper interconnects |
| US7235487B2 (en) * | 2004-05-13 | 2007-06-26 | International Business Machines Corporation | Metal seed layer deposition |
| JP2006024754A (ja) * | 2004-07-08 | 2006-01-26 | Advanced Lcd Technologies Development Center Co Ltd | 配線層の形成方法、配線層および薄膜トランジスタ |
| US7282802B2 (en) * | 2004-10-14 | 2007-10-16 | International Business Machines Corporation | Modified via bottom structure for reliability enhancement |
| US7344979B2 (en) * | 2005-02-11 | 2008-03-18 | Wafermasters, Inc. | High pressure treatment for improved grain growth and void reduction |
| US7449409B2 (en) * | 2005-03-14 | 2008-11-11 | Infineon Technologies Ag | Barrier layer for conductive features |
| DE102005020061B4 (de) * | 2005-03-31 | 2016-12-01 | Globalfoundries Inc. | Technik zur Herstellung von Verbindungsstrukturen mit reduzierter Elektro- und Stressmigration und/oder geringerem Widerstand |
| JP4738959B2 (ja) * | 2005-09-28 | 2011-08-03 | 東芝モバイルディスプレイ株式会社 | 配線構造体の形成方法 |
| US7666787B2 (en) * | 2006-02-21 | 2010-02-23 | International Business Machines Corporation | Grain growth promotion layer for semiconductor interconnect structures |
| US8198730B2 (en) * | 2007-01-10 | 2012-06-12 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| KR100830590B1 (ko) * | 2007-06-01 | 2008-05-21 | 삼성전자주식회사 | 텅스텐막, 그 형성 방법, 이를 포함한 반도체 소자 및 그반도체 소자의 형성 방법 |
| US7566653B2 (en) * | 2007-07-31 | 2009-07-28 | International Business Machines Corporation | Interconnect structure with grain growth promotion layer and method for forming the same |
| US7843063B2 (en) * | 2008-02-14 | 2010-11-30 | International Business Machines Corporation | Microstructure modification in copper interconnect structure |
| JP2009194195A (ja) * | 2008-02-15 | 2009-08-27 | Panasonic Corp | 半導体装置及びその製造方法 |
-
2009
- 2009-09-16 US US12/560,878 patent/US7956463B2/en active Active
-
2010
- 2010-08-25 GB GB1200519.5A patent/GB2485689B/en not_active Expired - Fee Related
- 2010-08-25 DE DE112010003659T patent/DE112010003659T5/de not_active Ceased
- 2010-08-25 CN CN2010800407893A patent/CN102498560A/zh active Pending
- 2010-08-25 WO PCT/EP2010/062407 patent/WO2011032812A1/en not_active Ceased
- 2010-08-25 JP JP2012529193A patent/JP5444471B2/ja not_active Expired - Fee Related
- 2010-09-09 TW TW099130515A patent/TWI497673B/zh not_active IP Right Cessation
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