JP2013504886A5 - - Google Patents

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Publication number
JP2013504886A5
JP2013504886A5 JP2012529193A JP2012529193A JP2013504886A5 JP 2013504886 A5 JP2013504886 A5 JP 2013504886A5 JP 2012529193 A JP2012529193 A JP 2012529193A JP 2012529193 A JP2012529193 A JP 2012529193A JP 2013504886 A5 JP2013504886 A5 JP 2013504886A5
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JP
Japan
Prior art keywords
opening
conductive
forming
plating seed
seed layer
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JP2012529193A
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English (en)
Japanese (ja)
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JP5444471B2 (ja
JP2013504886A (ja
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Priority claimed from US12/560,878 external-priority patent/US7956463B2/en
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Publication of JP2013504886A publication Critical patent/JP2013504886A/ja
Publication of JP2013504886A5 publication Critical patent/JP2013504886A5/ja
Application granted granted Critical
Publication of JP5444471B2 publication Critical patent/JP5444471B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012529193A 2009-09-16 2010-08-25 相互接続構造およびこれを形成する方法(細い相互接続開口のための導電性構造) Expired - Fee Related JP5444471B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/560,878 US7956463B2 (en) 2009-09-16 2009-09-16 Large grain size conductive structure for narrow interconnect openings
US12/560,878 2009-09-16
PCT/EP2010/062407 WO2011032812A1 (en) 2009-09-16 2010-08-25 Conductive structure for narrow interconnect openings

Publications (3)

Publication Number Publication Date
JP2013504886A JP2013504886A (ja) 2013-02-07
JP2013504886A5 true JP2013504886A5 (enExample) 2013-10-03
JP5444471B2 JP5444471B2 (ja) 2014-03-19

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Family Applications (1)

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JP2012529193A Expired - Fee Related JP5444471B2 (ja) 2009-09-16 2010-08-25 相互接続構造およびこれを形成する方法(細い相互接続開口のための導電性構造)

Country Status (7)

Country Link
US (1) US7956463B2 (enExample)
JP (1) JP5444471B2 (enExample)
CN (1) CN102498560A (enExample)
DE (1) DE112010003659T5 (enExample)
GB (1) GB2485689B (enExample)
TW (1) TWI497673B (enExample)
WO (1) WO2011032812A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5353109B2 (ja) 2008-08-15 2013-11-27 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5853351B2 (ja) * 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
US8661664B2 (en) 2010-07-19 2014-03-04 International Business Machines Corporation Techniques for forming narrow copper filled vias having improved conductivity
CN102790009B (zh) * 2011-05-16 2015-04-29 中芯国际集成电路制造(上海)有限公司 降低铜电镀工艺中边缘效应的方法及铜互连结构制造方法
US8637400B2 (en) 2011-06-21 2014-01-28 International Business Machines Corporation Interconnect structures and methods for back end of the line integration
US8492897B2 (en) * 2011-09-14 2013-07-23 International Business Machines Corporation Microstructure modification in copper interconnect structures
US8648465B2 (en) 2011-09-28 2014-02-11 International Business Machines Corporation Semiconductor interconnect structure having enhanced performance and reliability
CN103117245A (zh) * 2011-11-17 2013-05-22 盛美半导体设备(上海)有限公司 空气隙互联结构的形成方法
US9190323B2 (en) 2012-01-19 2015-11-17 GlobalFoundries, Inc. Semiconductor devices with copper interconnects and methods for fabricating same
JP6360276B2 (ja) * 2012-03-08 2018-07-18 東京エレクトロン株式会社 半導体装置、半導体装置の製造方法、半導体製造装置
US8836124B2 (en) * 2012-03-08 2014-09-16 International Business Machines Corporation Fuse and integrated conductor
CN102664193A (zh) * 2012-04-01 2012-09-12 京东方科技集团股份有限公司 导电结构及制造方法、薄膜晶体管、阵列基板和显示装置
DE102012210480B4 (de) * 2012-06-21 2024-05-08 Robert Bosch Gmbh Verfahren zum Herstellen eines Bauelements mit einer elektrischen Durchkontaktierung
US8722534B2 (en) 2012-07-30 2014-05-13 Globalfoundries Inc. Method for reducing wettability of interconnect material at corner interface and device incorporating same
US9514983B2 (en) * 2012-12-28 2016-12-06 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
US10032712B2 (en) 2013-03-15 2018-07-24 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structure
DE102013104464B4 (de) * 2013-03-15 2019-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterstruktur
CN104103573B (zh) * 2013-04-02 2017-06-16 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9997457B2 (en) 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
US9184134B2 (en) * 2014-01-23 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device structure
CN104952786B (zh) * 2014-03-25 2018-07-10 中芯国际集成电路制造(上海)有限公司 电互连结构及其形成方法
DE102014109352B4 (de) * 2014-04-30 2019-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Zusammengesetzte kontaktstöpsel-struktur und verfahren zur herstellung
US10079174B2 (en) 2014-04-30 2018-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Composite contact plug structure and method of making same
CN105097648B (zh) * 2014-05-04 2018-02-16 中芯国际集成电路制造(上海)有限公司 互连结构的形成方法
US9613907B2 (en) 2014-07-29 2017-04-04 Samsung Electronics Co., Ltd. Low resistivity damascene interconnect
US9536826B1 (en) 2015-06-15 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure with interconnect structure
US10332790B2 (en) 2015-06-15 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with interconnect structure
DE102015110437B4 (de) * 2015-06-29 2020-10-08 Infineon Technologies Ag Halbleitervorrichtung mit einer Metallstruktur, die mit einer leitfähigen Struktur elektrisch verbunden ist und Verfahren zur Herstellung
US9613856B1 (en) * 2015-09-18 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming metal interconnection
US10461026B2 (en) 2016-06-30 2019-10-29 International Business Machines Corporation Techniques to improve reliability in Cu interconnects using Cu intermetallics
US9748173B1 (en) * 2016-07-06 2017-08-29 International Business Machines Corporation Hybrid interconnects and method of forming the same
KR102680860B1 (ko) * 2016-09-05 2024-07-03 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102624631B1 (ko) 2016-12-02 2024-01-12 삼성전자주식회사 반도체 장치
US10354969B2 (en) * 2017-07-31 2019-07-16 Advanced Semiconductor Engineering, Inc. Substrate structure, semiconductor package including the same, and method for manufacturing the same
US10763207B2 (en) 2017-11-21 2020-09-01 Samsung Electronics Co., Ltd. Interconnects having long grains and methods of manufacturing the same
US10651084B1 (en) * 2019-07-18 2020-05-12 Micron Technology, Inc. Microelectronic devices comprising manganese-containing conductive structures, and related electronic systems and methods
KR102808645B1 (ko) 2019-08-23 2025-05-16 삼성전자주식회사 반도체 소자
US11205589B2 (en) * 2019-10-06 2021-12-21 Applied Materials, Inc. Methods and apparatuses for forming interconnection structures
US11551967B2 (en) * 2020-05-19 2023-01-10 Taiwan Semiconductor Manufacturing Company Limited Via structure and methods for forming the same
CN113871344B (zh) * 2020-06-30 2025-03-28 长鑫存储技术有限公司 半导体器件及半导体器件的形成方法
US11742290B2 (en) 2021-03-10 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming thereof
US11682675B2 (en) 2021-03-30 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor device and method
US12374583B2 (en) * 2021-05-12 2025-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
CN114551399A (zh) * 2022-02-17 2022-05-27 华虹半导体(无锡)有限公司 半导体结构及其形成方法
DE102023134996A1 (de) * 2023-12-13 2025-06-18 Infineon Technologies Ag Metallgefülltes kontaktloch in mikrogefertigter vorrichtung

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307267B1 (en) * 1997-12-26 2001-10-23 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US7244677B2 (en) * 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
US6319728B1 (en) * 1998-06-05 2001-11-20 Applied Materials, Inc. Method for treating a deposited film for resistivity reduction
TW444238B (en) * 1998-08-11 2001-07-01 Toshiba Corp A method of making thin film
US6126806A (en) * 1998-12-02 2000-10-03 International Business Machines Corporation Enhancing copper electromigration resistance with indium and oxygen lamination
US6242349B1 (en) * 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6096648A (en) * 1999-01-26 2000-08-01 Amd Copper/low dielectric interconnect formation with reduced electromigration
US6610151B1 (en) * 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US6228759B1 (en) * 2000-05-02 2001-05-08 Advanced Micro Devices, Inc. Method of forming an alloy precipitate to surround interconnect to minimize electromigration
US6429523B1 (en) * 2001-01-04 2002-08-06 International Business Machines Corp. Method for forming interconnects on semiconductor substrates and structures formed
US6506668B1 (en) * 2001-06-22 2003-01-14 Advanced Micro Devices, Inc. Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability
AU2003266560A1 (en) * 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
US7122466B2 (en) * 2003-07-28 2006-10-17 Texas Instruments Incorporated Two step semiconductor manufacturing process for copper interconnects
US7235487B2 (en) * 2004-05-13 2007-06-26 International Business Machines Corporation Metal seed layer deposition
JP2006024754A (ja) * 2004-07-08 2006-01-26 Advanced Lcd Technologies Development Center Co Ltd 配線層の形成方法、配線層および薄膜トランジスタ
US7282802B2 (en) * 2004-10-14 2007-10-16 International Business Machines Corporation Modified via bottom structure for reliability enhancement
US7344979B2 (en) * 2005-02-11 2008-03-18 Wafermasters, Inc. High pressure treatment for improved grain growth and void reduction
US7449409B2 (en) * 2005-03-14 2008-11-11 Infineon Technologies Ag Barrier layer for conductive features
DE102005020061B4 (de) * 2005-03-31 2016-12-01 Globalfoundries Inc. Technik zur Herstellung von Verbindungsstrukturen mit reduzierter Elektro- und Stressmigration und/oder geringerem Widerstand
JP4738959B2 (ja) * 2005-09-28 2011-08-03 東芝モバイルディスプレイ株式会社 配線構造体の形成方法
US7666787B2 (en) * 2006-02-21 2010-02-23 International Business Machines Corporation Grain growth promotion layer for semiconductor interconnect structures
US8198730B2 (en) * 2007-01-10 2012-06-12 Nec Corporation Semiconductor device and method of manufacturing the same
KR100830590B1 (ko) * 2007-06-01 2008-05-21 삼성전자주식회사 텅스텐막, 그 형성 방법, 이를 포함한 반도체 소자 및 그반도체 소자의 형성 방법
US7566653B2 (en) * 2007-07-31 2009-07-28 International Business Machines Corporation Interconnect structure with grain growth promotion layer and method for forming the same
US7843063B2 (en) * 2008-02-14 2010-11-30 International Business Machines Corporation Microstructure modification in copper interconnect structure
JP2009194195A (ja) * 2008-02-15 2009-08-27 Panasonic Corp 半導体装置及びその製造方法

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