CN103003939A - 改善窄铜填充过孔的导电性的方法及结构 - Google Patents

改善窄铜填充过孔的导电性的方法及结构 Download PDF

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CN103003939A
CN103003939A CN2011800353154A CN201180035315A CN103003939A CN 103003939 A CN103003939 A CN 103003939A CN 2011800353154 A CN2011800353154 A CN 2011800353154A CN 201180035315 A CN201180035315 A CN 201180035315A CN 103003939 A CN103003939 A CN 103003939A
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F·R·麦克菲力
杨智超
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Abstract

提供了一种改善铜（Cu）填充过孔的导电性的技术。在一方面，提供一种制造Cu填充过孔的方法。该方法包含下列步骤。在电介质中蚀刻过孔。该过孔由扩散阻挡层加衬。薄钌(Ru)层被保形地沉积到该扩散阻挡层上。薄Cu晶种层被沉积在该Ru层上。进行第一退火以增加该Cu晶种层的晶粒尺寸。用附加的Cu填充该过孔。进行第二退火以增加该附加的Cu的晶粒尺寸。

Description

改善窄铜填充过孔的导电性的方法及结构
技术领域
本发明涉及布线结构，更具体地，涉及改善铜（Cu）填充过孔的导电性的技术。
背景技术
在目前高密度布线技术中，窄铜（Cu）填充过孔的导电性会因为在这些尺寸的过孔中Cu的小晶粒尺寸而劣化。常规技术涉及含Cu结构的退火以使晶粒尺寸增大进而改善其导电性。
例如，一般而言，用以制造Cu填充过孔的常规技术典型包含：第一，在线布路结构已嵌入其中的介电基体（matrix）中形成过孔。第二，该过孔以扩散阻挡层加衬，以防止Cu扩散进入电介质中。该扩散阻挡层通常包含直接沉积在该电介质上的氮化钽(TaN)层和沉积在TaN的顶上的钽(Ta)。第三，薄Cu晶种层溅射至该暴露的Ta表面，以便准备电镀敷过孔。第四，利用电镀敷工艺将Cu填充该过孔，第五，所形成的结构被退火，使在过孔的Cu晶粒生长以改善导电性，然而，这些方法被证实对这些Cu过孔结构的导电性增加而言效力有限。
大Cu晶粒生长的限制因素为在Cu晶种层中晶粒的尺寸。这些在Cu晶种层中的晶粒形成的模板，电镀敷的Cu随后沉积在该模板上，且因此初始电镀敷Cu的晶粒尺寸反映由Cu晶种层所展现的小晶粒尺寸。Cu电镀敷后接下来的退火对克服最初的小晶粒结构的效果有限。该Cu晶种层所显现出的小晶粒尺寸绝大部分归因于该层的薄度，以及Cu湿润下方扩散阻挡层表面的程度。无法增加该Cu晶种层厚度以克服此问题，因为由溅射工艺形成的Cu晶种层不能保形地(conformally)沉积，因此，如果将该Cu晶种制造得太厚来试图增加晶粒尺寸，将会使布线结构中的到过孔的开口夹断(pinch off)，导致无法进行后续的电镀敷。
因此，迫切需要改善Cu填充过孔导电性的技术。
发明内容
本发明提供改善铜（Cu）填充过孔的导电性的技术。在本发明的一方面，提供一种制造铜填充过孔的方法。该方法包含下列步骤。在电介质中蚀刻过孔。该过孔由扩散阻挡层加衬。薄钌(Ru)层被保形地沉积到该扩散阻挡层上。薄Cu晶种层被沉积在该Ru层上。进行第一退火以增加该Cu晶种层的晶粒尺寸。用附加的Cu填充该过孔。进行第二退火以增加该附加的Cu的晶粒尺寸。
在本发明的另一方面，提供一种在电介质中形成的Cu填充过孔，其包括：过孔；为过孔加衬的扩散阻挡层；薄Ru层，保形地设置在该扩散阻挡层上；薄Cu晶种层，设置在该Ru层上；以及附加的Cu，电镀敷到该薄Cu晶种层上以填充该过孔而形成该Cu填充过孔。该附加的Cu具有的平均晶粒宽度为至少该过孔宽度的0.5倍。该过孔的宽度可约为20纳米至50纳米。
参考下面的详细说明和附图，将获得对本发明及其进一步的特征和优点的更全面理解。
附图说明
现在将参考在附图中示例的优选实施例仅通过实例来解释本发明，其中：
图1为根据本发明的实施例，显示沉积在衬底上的电介质和蚀刻到电介质中的过孔的截面图。
图2为根据本发明的实施例，显示该过孔由扩散阻挡层加衬的截面图。
图3为根据本发明的实施例，显示钌（Ru）层沉积到该扩散阻挡层上的截面图。
图4为根据本发明的实施例，显示铜（Cu）晶种层沉积在该Ru层以准备用于电镀敷的过孔的截面图。
图5为根据本发明的实施例，显示用Cu填充过孔的截面图。
图6为根据本发明的实施例，显示利用本技术所产生的Cu填充过孔的截面图。
具体实施方式
图1至图5示出了制造铜（Cu）填充过孔的示例方法。有利地，利用本发明技术形成的Cu填充过孔与用常规技术所形成的结构相比，显示在电阻上有10-15%的一致减少。开始处理时，在衬底之上形成电介质。
图1为显示电介质120沉积在衬底100之上的截面图。电介质120可包含任何适合的介电材料，包括，但不限于，二氧化硅(SiO2)、硅-碳-氧-氢材料(如：SICOH)和有机聚合物中的至少一种，电介质120可利用任何适合的沉积方法沉积，例如，化学气相沉积(CVD)、原子层沉积(ALD)、蒸发、溅射或基于溶液的技术，例如旋涂，厚度由约10纳米至约1000纳米。衬底100通常表示在单层或多层的布线阵列中任一布线层或接触层。然后，利用任一适合的蚀刻处理，如反应离子蚀刻(RIE)，在电介质120中蚀刻窄过孔101。根据图1所示的示例性实施例，形成具有宽度w约20纳米至约50纳米的过孔101。
接着，该过孔以扩散阻挡层加衬。图2显示以扩散阻挡层202加衬的过孔101的截面图。根据示例性实施例，该扩散阻挡层202由二层构成。第一层为氮化钽(TaN)层202a，被沉积在电介质120上，厚度由约5纳米至约15纳米，例如从约8纳米至约12纳米，以作加衬过孔。第二层为钽(Ta)层202b，被沉积在氮化钽(TaN)层202a上，厚度由约5纳米至15纳米，例如由8纳米至12纳米。扩散阻挡层202防止Cu(见下述)扩散进入电介质。
之后，将薄钌（Ru）层保形沉积到扩散阻挡层上。图3为显示Ru层302沉积在扩散阻挡层202(如Ta层202b)上的截面图。根据示例性实施例，以羰基钌(ruthenium carbonyl)为前驱物，利用CVD或ALD，Ru层302被保形沉积搭配扩散阻挡层202上，厚度从约1纳米至约10纳米，例如从约2纳米至约5纳米。CVD或ALD确保Ru均匀保形覆盖在扩散阻挡层上(不希望具有任何来自在后续处理步骤期间暴露的扩散阻挡层的Ta)。选择性地，Ru层302可利用溅射沉积方法沉积在扩散阻挡层202上。
Ru层302用于二个目的。第一，Ru层302作为Cu晶种层的润湿剂(见下述)，以有助于较大晶种晶粒的形成。第二，在使用退火步骤以增加Cu晶种层的晶粒尺寸(亦见下述)期间，Ru层302保护下方扩散阻挡层202不被氧化。因此，钌的均匀覆盖是很重要的。
在该Ru层上沉积薄Cu晶种层。图4显示Cu晶种层402沉积在Ru层302上以准备用于电镀敷的过孔的截面图。根据示例性实施例，Cu晶种层402利用溅射沉积制程沉积在Ru层302上，厚度从约20纳米至约100纳米，例如从约25纳米至约35纳米。
之后，进行退火步骤以增加Cu晶种层402的晶粒尺寸。根据示例性实施例，在约摄氏150℃至约350℃，例如约250℃的温度下，在形成气体(例如氢气或氢气与任何不会与衬底反应的气体如氮气或惰性气体的混合物)中进行退火。需注意Cu晶种层的退火步骤在使用电镀敷填充该过孔(见下述)之前进行。这可产生较大的晶种晶粒，这可在电化学Cu填充后，促进过孔中较大晶粒的形成。再者，如果没有Ru层302的引入，该Cu晶种层退火就不会有效，这有二个原因。第一，该Cu晶种层被设置在由Cu很差湿润的钽(Ta)表面(属于扩散阻挡层)上。因此，退火可导致该Cu晶种层起球(ball up)，而非形成希望的均匀平坦的晶粒。第二，由于在Ta层(属于扩散阻挡层)上的Cu晶种层缺乏连续性，暴露的Ta会氧化(除非在极高真空环境中进行退火，其费用将会相当昂贵)。Ta的氧化会劣化结构的电迁移性能。由于Ta对氧有高度的化学亲合力，一旦钽被氧化，就无法企图用随后的还原处理将其恢复成金属状态。以均匀保形Ru层，防氧化贵金属，覆盖Ta，可在提议的结构中避免该问题。
之后，以附加的Cu填充该过孔中。图5为已由Cu502填充的过孔101的截面图。根据本发明的示例性实施例，利用电镀敷处理将Cu502镀敷到过孔101中，如图5所示，如果需要的话，将会溢出过孔的Cu502会被研磨到与Cu晶种层402的顶表面共面。另外，可选地，Cu502的溢出可以留下覆盖Cu晶种层402的上表面。例如下面描述的图6。再次进行退火，此次增加Cu502的晶粒尺寸。根据示例性实施例，在约150℃至约350℃(例如，约250℃)的温度下在形成气体中进行退火。
通过增加Cu502的晶粒尺寸，也会增加过孔的导电性。即，在测试中，以本技术所形成的过孔与以公知技术制造的结构相比，显示电阻的10%-15%的一致减少。此外，在该测试中，本结构和传统结构都受到进一步的热循环处理以模拟随后六层布线的制造。经过这样的处理后，本发明结构可维持10%至15%的性能优势。
在电化学Cu填充后，Cu晶种层的晶粒尺寸增加促使过孔中形成较大的晶粒。图6所示本技术优点的示意图。图6显示利用上述制造方法所形成的Cu填充过孔的截面图。Cu602代表填充到过孔中的附加的Cu，例如，依据接合上述图5所描述的步骤。在Cu填充之前沉积的各层，例如，扩散阻挡层、Ru层和Cu晶种层(参见，例如，上述图5)，为了使描述更简单清楚，所以并未显示，但是在此实施例中，可以理解的是这些层都存在于结构中。此外，与图5中Cu502相比，图6中的附加的Cu填充，例如Cu602，溢出该过孔。如上文所强调的，如果需要的话，可使用可选的研磨步骤将溢出去除。
图6为用以强调目前技术的有益的晶粒特性。具体来说，利用首先生长大晶粒尺寸的Cu晶种层，如上所述，在附加的Cu填充和最后的退火后，过孔中实现更大、更均匀的晶粒，如上所述。只作为实例，Cu602中获得的晶粒尺寸g至少为特征尺寸的约0.5倍。晶粒尺寸g可量化为量测的直线性尺寸，例如晶粒的截面宽度(见图6)。特征尺寸可量化为特征(范例中的过孔)的截面宽度(见图1)。因此，在这些实例中，平均上，附加的Cu602的晶粒(最终退火后)具有的截面宽度至少为过孔截面宽度的0.5倍。以本技术可以达到在附加的Cu填充中的具有等于过孔的截面宽度的截面宽度的晶粒，见图6。
还应注意的是，本技术结构中的晶粒尺寸相当均匀。只作为实例，贯穿过孔，该晶粒尺寸(如基于上述截面晶粒宽度而所量测)的变化不会超过25%。
相比之下，常规技术会产生贯穿过孔的不均匀晶粒尺寸，顶部产生较大的晶粒，而过孔底部会产生较小的晶粒(其中Cu被空间限制)，这些较小晶粒的截面宽度通常约为过孔截面宽度的0.2倍，比本技术提供的小一个数量级。
虽然在本文中已经描述了本发明的示例实施例，但是应理解，本发明不限于这些精确实施例，本领域的技术人员可进行各种其他变化和修改而未背离本发明的范围。

Claims (26)

1.一种制造铜填充过孔的方法，包括以下步骤：
在电介质中蚀刻过孔；
用扩散阻挡层为所述过孔加衬；
将钌层保形沉积到所述扩散阻挡层上；
在所述钌层上沉积铜晶种层；
进行第一退火以增加所述铜晶种层的晶粒尺寸；
用附加的铜填充所述过孔；以及
进行第二退火以增加所述附加的铜的晶粒尺寸。
2.根据权利要求1的方法，其中用所述扩散阻挡层为所述过孔加衬的步骤，包括以下步骤：
将氮化钽层沉积到所述电介质上以为所述过孔加衬；以及
将钽层沉积到所述氮化钽层上。
3.根据权利要求2的方法，其中所述氮化钽层被沉积到从约5纳米至约15纳米的厚度。
4.根据权利要求2或3的方法，其中所述氮化钽层被沉积到从约8纳米至约12纳米的厚度。
5.根据权利要求2到4中任一项的方法，其中所述钽层被沉积到从约5纳米至约15纳米的厚度。
6.根据权利要求2到5中任一项的方法，其中所述钽层被沉积到从约8纳米至约12纳米的厚度。
7.根据上述权利要求中任一项的方法，其中所述钌层被沉积到从约1纳米至约10纳米的厚度。
8.根据上述权利要求中任一项的方法，其中所述钌层被沉积到从约2纳米至约5纳米的厚度。
9.根据上述权利要求中任一项的方法，其中利用化学气相沉积将所述钌层沉积到所述扩散阻挡层上。
10.根据权利要求9的方法，其中使用羰基钌作为用于化学气相沉积的前驱物。
11.根据权利要求1-8中任一项的方法，其中利用原子层沉积将所述钌层沉积到所述扩散阻挡层上。
12.根据权利要求11的方法，其中使用羰基钌作为用于原子层沉积的前驱物。
13.根据权利要求1-8中任一项的方法，其中利用溅射沉积方法将所述钌层沉积到所述扩散阻挡层上。
14.根据上述权利要求中任一项的方法，其中所述铜晶种层被沉积到从约20纳米至约100纳米的厚度。
15.根据上述权利要求中任一项的方法，其中所述铜晶种层被沉积到从约25纳米至约35纳米的厚度。
16.根据上述权利要求中任一项的方法，其中所述铜晶种层通过利用溅射沉积方法而沉积。
17.根据上述权利要求中任一项的方法，其中在从约150℃至约350℃的温度下在形成气体中进行所述第一退火。
18.根据上述权利要求中任一项的方法，还包括以下步骤：
将所述附加的铜镀敷到所述过孔中。
19.根据权利要求18的方法，其中所述附加的铜被电镀敷到所述过孔中。
20.根据上述权利要求中任一项的方法，其中在从约150℃至约350℃的温度下在形成气体中进行所述第二退火。
21.根据上述权利要求中任一项的方法，其中用附加的铜填充所述过孔的步骤响应于进行所述第一退火的所述步骤。
22.一种在电介质中形成的铜填充过孔，包括：
过孔；
扩散阻挡层，为所述过孔加衬；
钌层，保形设置在所述扩散阻挡层上；
铜晶种层，设置在所述钌层上；以及
附加的铜，镀敷到所述铜晶种层上以填充所述过孔而形成所述铜填充过孔，其中所述附加的铜具有至少所述过孔的宽度的0.5倍的平均晶粒宽度。
23.根据权利要求22的铜填充过孔，其中所述过孔具有从约20纳米到约50纳米的宽度。
24.根据权利要求22或23的铜填充过孔，其中所述扩散阻挡层包括：
氮化钽层，为所述过孔加衬；以及
钽层，位于所述氮化钽层上。
25.根据权利要求22到24中任一项的铜填充过孔，其中所述钌层具有从约1纳米至约10纳米的厚度。
26.根据权利要求22到25中任一项的铜填充过孔，其中所述铜晶种层具有从约20纳米至约100纳米的厚度。
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