CN102498560A - 用于窄互连开口的导电结构 - Google Patents

用于窄互连开口的导电结构 Download PDF

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Publication number
CN102498560A
CN102498560A CN2010800407893A CN201080040789A CN102498560A CN 102498560 A CN102498560 A CN 102498560A CN 2010800407893 A CN2010800407893 A CN 2010800407893A CN 201080040789 A CN201080040789 A CN 201080040789A CN 102498560 A CN102498560 A CN 102498560A
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layer
opening
inculating crystal
crystal layer
conductive structure
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CN2010800407893A
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English (en)
Chinese (zh)
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S·罗斯纳格尔
C-c·杨
D·埃德尔斯坦
野上毅
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2010800407893A 2009-09-16 2010-08-25 用于窄互连开口的导电结构 Pending CN102498560A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/560,878 US7956463B2 (en) 2009-09-16 2009-09-16 Large grain size conductive structure for narrow interconnect openings
US12/560,878 2009-09-16
PCT/EP2010/062407 WO2011032812A1 (en) 2009-09-16 2010-08-25 Conductive structure for narrow interconnect openings

Publications (1)

Publication Number Publication Date
CN102498560A true CN102498560A (zh) 2012-06-13

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CN2010800407893A Pending CN102498560A (zh) 2009-09-16 2010-08-25 用于窄互连开口的导电结构

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US (1) US7956463B2 (enExample)
JP (1) JP5444471B2 (enExample)
CN (1) CN102498560A (enExample)
DE (1) DE112010003659T5 (enExample)
GB (1) GB2485689B (enExample)
TW (1) TWI497673B (enExample)
WO (1) WO2011032812A1 (enExample)

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CN103003939A (zh) * 2010-07-19 2013-03-27 国际商业机器公司 改善窄铜填充过孔的导电性的方法及结构
CN104952786A (zh) * 2014-03-25 2015-09-30 中芯国际集成电路制造(上海)有限公司 电互连结构及其形成方法
CN106548974A (zh) * 2015-09-18 2017-03-29 台湾积体电路制造股份有限公司 半导体装置及其制造方法
CN107799464A (zh) * 2016-09-05 2018-03-13 三星电子株式会社 半导体器件及其制造方法
CN112242349A (zh) * 2019-07-18 2021-01-19 美光科技公司 包括含锰导电结构的微电子装置以及相关电子系统和方法
WO2022001677A1 (zh) * 2020-06-30 2022-01-06 长鑫存储技术有限公司 半导体器件及半导体器件的形成方法
CN114551399A (zh) * 2022-02-17 2022-05-27 华虹半导体(无锡)有限公司 半导体结构及其形成方法

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CN102664193A (zh) * 2012-04-01 2012-09-12 京东方科技集团股份有限公司 导电结构及制造方法、薄膜晶体管、阵列基板和显示装置
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CN104103573B (zh) * 2013-04-02 2017-06-16 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9997457B2 (en) 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
US9184134B2 (en) * 2014-01-23 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device structure
DE102014109352B4 (de) * 2014-04-30 2019-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Zusammengesetzte kontaktstöpsel-struktur und verfahren zur herstellung
US10079174B2 (en) 2014-04-30 2018-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Composite contact plug structure and method of making same
CN105097648B (zh) * 2014-05-04 2018-02-16 中芯国际集成电路制造(上海)有限公司 互连结构的形成方法
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US10332790B2 (en) 2015-06-15 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with interconnect structure
DE102015110437B4 (de) * 2015-06-29 2020-10-08 Infineon Technologies Ag Halbleitervorrichtung mit einer Metallstruktur, die mit einer leitfähigen Struktur elektrisch verbunden ist und Verfahren zur Herstellung
US10461026B2 (en) 2016-06-30 2019-10-29 International Business Machines Corporation Techniques to improve reliability in Cu interconnects using Cu intermetallics
US9748173B1 (en) * 2016-07-06 2017-08-29 International Business Machines Corporation Hybrid interconnects and method of forming the same
KR102624631B1 (ko) 2016-12-02 2024-01-12 삼성전자주식회사 반도체 장치
US10354969B2 (en) * 2017-07-31 2019-07-16 Advanced Semiconductor Engineering, Inc. Substrate structure, semiconductor package including the same, and method for manufacturing the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103003939A (zh) * 2010-07-19 2013-03-27 国际商业机器公司 改善窄铜填充过孔的导电性的方法及结构
CN104952786A (zh) * 2014-03-25 2015-09-30 中芯国际集成电路制造(上海)有限公司 电互连结构及其形成方法
CN104952786B (zh) * 2014-03-25 2018-07-10 中芯国际集成电路制造(上海)有限公司 电互连结构及其形成方法
CN106548974A (zh) * 2015-09-18 2017-03-29 台湾积体电路制造股份有限公司 半导体装置及其制造方法
CN106548974B (zh) * 2015-09-18 2019-10-18 台湾积体电路制造股份有限公司 半导体装置及其制造方法
CN107799464A (zh) * 2016-09-05 2018-03-13 三星电子株式会社 半导体器件及其制造方法
CN107799464B (zh) * 2016-09-05 2023-09-08 三星电子株式会社 半导体器件及其制造方法
CN112242349A (zh) * 2019-07-18 2021-01-19 美光科技公司 包括含锰导电结构的微电子装置以及相关电子系统和方法
CN112242349B (zh) * 2019-07-18 2025-05-30 美光科技公司 包括含锰导电结构的微电子装置以及相关电子系统和方法
WO2022001677A1 (zh) * 2020-06-30 2022-01-06 长鑫存储技术有限公司 半导体器件及半导体器件的形成方法
CN114551399A (zh) * 2022-02-17 2022-05-27 华虹半导体(无锡)有限公司 半导体结构及其形成方法

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GB201200519D0 (en) 2012-02-29
US7956463B2 (en) 2011-06-07
GB2485689A (en) 2012-05-23
JP5444471B2 (ja) 2014-03-19
US20110062587A1 (en) 2011-03-17
JP2013504886A (ja) 2013-02-07
DE112010003659T5 (de) 2012-10-31
TW201126683A (en) 2011-08-01
GB2485689B (en) 2013-06-12
TWI497673B (zh) 2015-08-21
WO2011032812A1 (en) 2011-03-24

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