TWI497673B - 用於窄互相連接開口之大晶粒尺寸傳導結構 - Google Patents
用於窄互相連接開口之大晶粒尺寸傳導結構 Download PDFInfo
- Publication number
- TWI497673B TWI497673B TW099130515A TW99130515A TWI497673B TW I497673 B TWI497673 B TW I497673B TW 099130515 A TW099130515 A TW 099130515A TW 99130515 A TW99130515 A TW 99130515A TW I497673 B TWI497673 B TW I497673B
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- TW
- Taiwan
- Prior art keywords
- conductive
- opening
- metal
- layer
- forming
- Prior art date
Links
- 239000003989 dielectric material Substances 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 47
- 230000004888 barrier function Effects 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 238000007747 plating Methods 0.000 claims description 38
- 238000009792 diffusion process Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- 230000001737 promoting effect Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 18
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims description 15
- 235000017491 Bambusa tulda Nutrition 0.000 claims description 15
- 241001330002 Bambuseae Species 0.000 claims description 15
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims description 15
- 239000011425 bamboo Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 12
- 238000004581 coalescence Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910016570 AlCu Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910001507 metal halide Inorganic materials 0.000 claims description 3
- 150000005309 metal halides Chemical class 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 1
- 229920000090 poly(aryl ether) Polymers 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 94
- 239000004065 semiconductor Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 6
- 238000000224 chemical solution deposition Methods 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018565 CuAl Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910017840 NH 3 Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 101150089047 cutA gene Proteins 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 poly(aryl) Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76844—Bottomless liners
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/560,878 US7956463B2 (en) | 2009-09-16 | 2009-09-16 | Large grain size conductive structure for narrow interconnect openings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201126683A TW201126683A (en) | 2011-08-01 |
| TWI497673B true TWI497673B (zh) | 2015-08-21 |
Family
ID=43064611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099130515A TWI497673B (zh) | 2009-09-16 | 2010-09-09 | 用於窄互相連接開口之大晶粒尺寸傳導結構 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7956463B2 (enExample) |
| JP (1) | JP5444471B2 (enExample) |
| CN (1) | CN102498560A (enExample) |
| DE (1) | DE112010003659T5 (enExample) |
| GB (1) | GB2485689B (enExample) |
| TW (1) | TWI497673B (enExample) |
| WO (1) | WO2011032812A1 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5353109B2 (ja) | 2008-08-15 | 2013-11-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5853351B2 (ja) * | 2010-03-25 | 2016-02-09 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
| US8661664B2 (en) | 2010-07-19 | 2014-03-04 | International Business Machines Corporation | Techniques for forming narrow copper filled vias having improved conductivity |
| CN102790009B (zh) * | 2011-05-16 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 降低铜电镀工艺中边缘效应的方法及铜互连结构制造方法 |
| US8637400B2 (en) | 2011-06-21 | 2014-01-28 | International Business Machines Corporation | Interconnect structures and methods for back end of the line integration |
| US8492897B2 (en) * | 2011-09-14 | 2013-07-23 | International Business Machines Corporation | Microstructure modification in copper interconnect structures |
| US8648465B2 (en) | 2011-09-28 | 2014-02-11 | International Business Machines Corporation | Semiconductor interconnect structure having enhanced performance and reliability |
| CN103117245A (zh) * | 2011-11-17 | 2013-05-22 | 盛美半导体设备（上海）有限公司 | 空气隙互联结构的形成方法 |
| US9190323B2 (en) | 2012-01-19 | 2015-11-17 | GlobalFoundries, Inc. | Semiconductor devices with copper interconnects and methods for fabricating same |
| JP6360276B2 (ja) * | 2012-03-08 | 2018-07-18 | 東京エレクトロン株式会社 | 半導体装置、半導体装置の製造方法、半導体製造装置 |
| US8836124B2 (en) * | 2012-03-08 | 2014-09-16 | International Business Machines Corporation | Fuse and integrated conductor |
| CN102664193A (zh) * | 2012-04-01 | 2012-09-12 | 京东方科技集团股份有限公司 | 导电结构及制造方法、薄膜晶体管、阵列基板和显示装置 |
| DE102012210480B4 (de) * | 2012-06-21 | 2024-05-08 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Bauelements mit einer elektrischen Durchkontaktierung |
| US8722534B2 (en) | 2012-07-30 | 2014-05-13 | Globalfoundries Inc. | Method for reducing wettability of interconnect material at corner interface and device incorporating same |
| US9514983B2 (en) * | 2012-12-28 | 2016-12-06 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
| US10032712B2 (en) | 2013-03-15 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor structure |
| DE102013104464B4 (de) * | 2013-03-15 | 2019-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleiterstruktur |
| CN104103573B (zh) * | 2013-04-02 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US9997457B2 (en) | 2013-12-20 | 2018-06-12 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
| US9184134B2 (en) * | 2014-01-23 | 2015-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device structure |
| CN104952786B (zh) * | 2014-03-25 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 电互连结构及其形成方法 |
| DE102014109352B4 (de) * | 2014-04-30 | 2019-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zusammengesetzte kontaktstöpsel-struktur und verfahren zur herstellung |
| US10079174B2 (en) | 2014-04-30 | 2018-09-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite contact plug structure and method of making same |
| CN105097648B (zh) * | 2014-05-04 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的形成方法 |
| US9613907B2 (en) | 2014-07-29 | 2017-04-04 | Samsung Electronics Co., Ltd. | Low resistivity damascene interconnect |
| US9536826B1 (en) | 2015-06-15 | 2017-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (finFET) device structure with interconnect structure |
| US10332790B2 (en) | 2015-06-15 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure with interconnect structure |
| DE102015110437B4 (de) * | 2015-06-29 | 2020-10-08 | Infineon Technologies Ag | Halbleitervorrichtung mit einer Metallstruktur, die mit einer leitfähigen Struktur elektrisch verbunden ist und Verfahren zur Herstellung |
| US9613856B1 (en) * | 2015-09-18 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming metal interconnection |
| US10461026B2 (en) | 2016-06-30 | 2019-10-29 | International Business Machines Corporation | Techniques to improve reliability in Cu interconnects using Cu intermetallics |
| US9748173B1 (en) * | 2016-07-06 | 2017-08-29 | International Business Machines Corporation | Hybrid interconnects and method of forming the same |
| KR102680860B1 (ko) * | 2016-09-05 | 2024-07-03 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR102624631B1 (ko) | 2016-12-02 | 2024-01-12 | 삼성전자주식회사 | 반도체 장치 |
| US10354969B2 (en) * | 2017-07-31 | 2019-07-16 | Advanced Semiconductor Engineering, Inc. | Substrate structure, semiconductor package including the same, and method for manufacturing the same |
| US10763207B2 (en) | 2017-11-21 | 2020-09-01 | Samsung Electronics Co., Ltd. | Interconnects having long grains and methods of manufacturing the same |
| US10651084B1 (en) * | 2019-07-18 | 2020-05-12 | Micron Technology, Inc. | Microelectronic devices comprising manganese-containing conductive structures, and related electronic systems and methods |
| KR102808645B1 (ko) | 2019-08-23 | 2025-05-16 | 삼성전자주식회사 | 반도체 소자 |
| US11205589B2 (en) * | 2019-10-06 | 2021-12-21 | Applied Materials, Inc. | Methods and apparatuses for forming interconnection structures |
| US11551967B2 (en) * | 2020-05-19 | 2023-01-10 | Taiwan Semiconductor Manufacturing Company Limited | Via structure and methods for forming the same |
| CN113871344B (zh) * | 2020-06-30 | 2025-03-28 | 长鑫存储技术有限公司 | 半导体器件及半导体器件的形成方法 |
| US11742290B2 (en) | 2021-03-10 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure and method of forming thereof |
| US11682675B2 (en) | 2021-03-30 | 2023-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field-effect transistor device and method |
| US12374583B2 (en) * | 2021-05-12 | 2025-07-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices and methods of manufacture |
| CN114551399A (zh) * | 2022-02-17 | 2022-05-27 | 华虹半导体(无锡)有限公司 | 半导体结构及其形成方法 |
| DE102023134996A1 (de) * | 2023-12-13 | 2025-06-18 | Infineon Technologies Ag | Metallgefülltes kontaktloch in mikrogefertigter vorrichtung |
Citations (3)
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| JP2006024754A (ja) * | 2004-07-08 | 2006-01-26 | Advanced Lcd Technologies Development Center Co Ltd | 配線層の形成方法、配線層および薄膜トランジスタ |
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| JP2006024754A (ja) * | 2004-07-08 | 2006-01-26 | Advanced Lcd Technologies Development Center Co Ltd | 配線層の形成方法、配線層および薄膜トランジスタ |
| TW200629519A (en) * | 2004-10-14 | 2006-08-16 | Ibm | Modified via bottom structure for reliability enhancement |
| TW200910523A (en) * | 2007-07-31 | 2009-03-01 | Ibm | Interconnect structure with grain growth promotion layer and method for forming the same |
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| GB201200519D0 (en) | 2012-02-29 |
| US7956463B2 (en) | 2011-06-07 |
| GB2485689A (en) | 2012-05-23 |
| JP5444471B2 (ja) | 2014-03-19 |
| US20110062587A1 (en) | 2011-03-17 |
| CN102498560A (zh) | 2012-06-13 |
| JP2013504886A (ja) | 2013-02-07 |
| DE112010003659T5 (de) | 2012-10-31 |
| TW201126683A (en) | 2011-08-01 |
| GB2485689B (en) | 2013-06-12 |
| WO2011032812A1 (en) | 2011-03-24 |
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