TWI456772B - 用於太陽能電池之透明電極及其製造方法 - Google Patents

用於太陽能電池之透明電極及其製造方法 Download PDF

Info

Publication number
TWI456772B
TWI456772B TW097106817A TW97106817A TWI456772B TW I456772 B TWI456772 B TW I456772B TW 097106817 A TW097106817 A TW 097106817A TW 97106817 A TW97106817 A TW 97106817A TW I456772 B TWI456772 B TW I456772B
Authority
TW
Taiwan
Prior art keywords
layer
transparent
metal
transparent electrode
polycrystalline
Prior art date
Application number
TW097106817A
Other languages
English (en)
Other versions
TW200840061A (en
Inventor
Chong Chan Lee
Jong Bok Kim
Ho Gi Bae
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200840061A publication Critical patent/TW200840061A/zh
Application granted granted Critical
Publication of TWI456772B publication Critical patent/TWI456772B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)

Claims (12)

  1. 一種用於太陽能電池之透明電極，該透明電極為透明導電且包括：一透明基底層；形成在該透明基底層上之一第一多晶透明金屬氧化層；形成在該第一多晶透明金屬氧化物層上之一金屬層，其中該金屬層係由室溫沉積方法製造；及形成在該金屬層上之一第二多晶透明金屬氧化層。
  2. 如申請專利範圍第1項之透明電極，其中該金屬層選自由銀(Ag)、鉑(Pt)、金(Au)、銅(Cu)及其等混合物(合金)組成的群組中之至少一者，且該透明金屬氧化層包括銦錫氧化物(ITO)或氟錫氧化物(FTO)。
  3. 如申請專利範圍第1項之透明電極，其中該金屬層之厚度最大為500Å。
  4. 如申請專利範圍第3項之透明電極，其中該第一多晶透明.金屬氧化層之厚度範圍為250至800Å，該金屬層之厚度範圍為50至150Å，且該第二多晶透明金屬氧化層之厚度範圍為250至800Å。
  5. 一種太陽能電池，其包括一如申請專利範圍第1至4項中任一項之用於太陽能電池的透明電極，以及面對該透明電極的一輔助電極。
  6. 如申請專利範圍第5項之太陽能電池，更包括具有色料的一多孔層及置於該透明電極與該輔助電極之間的一電解質層。
  7. 一種用於太陽能電池之透明電極的製造方法，該製造方法包括：備置一透明基底層；在該透明基底層上形成一第一多晶透明金屬氧化層；在該第一多晶透明金屬氧化物層上形成一金屬層；及在該金屬層上形成一第二多晶透明金屬氧化層；其中該透明金屬氧化物包括銦錫氧化物(ITO)，且其中該ITO層係當該基底層加熱至200±50℃時形成。
  8. 如申請專利範圍第7項之製造方法，更包括在前述的操作後，退火該用於太陽能電池之透明電極。
  9. 如申請專利範圍第8項之製造方法，其中退火該透明電極包括於220±50℃熱處理該透明電極達30分鐘至2小時。
  10. 如申請專利範圍第7或8項之製造方法，其中該透明金屬氧化層及該金屬層係藉著濺鍍真空沉積法形成。
  11. 如申請專利範圍第7或8項之製造方法，其中該金屬層包括銀(Ag)且當該基底層在室溫時形成。
  12. 如申請專利範圍第7或8項之製造方法，其中該第一多晶透明金屬氧化層之厚度範圍為250至800Å，該金屬層厚度範圍為50至150Å且該第二多晶透明金屬氧化層厚度範圍為250至800Å。
TW097106817A 2007-02-28 2008-02-27 用於太陽能電池之透明電極及其製造方法 TWI456772B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070020487A KR101352779B1 (ko) 2007-02-28 2007-02-28 태양전지용 투명전극 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200840061A TW200840061A (en) 2008-10-01
TWI456772B true TWI456772B (zh) 2014-10-11

Family

ID=39721409

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097106817A TWI456772B (zh) 2007-02-28 2008-02-27 用於太陽能電池之透明電極及其製造方法

Country Status (4)

Country Link
KR (1) KR101352779B1 (zh)
CN (1) CN101622721B (zh)
TW (1) TWI456772B (zh)
WO (1) WO2008105597A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101051662B1 (ko) * 2009-03-27 2011-07-26 한국과학기술원 휨 특성이 뛰어난 투명 전도막, 및 그것을 이용한 투명 전극 및 유기 전자 소자
TWI398008B (zh) * 2009-06-24 2013-06-01 Univ Nat Chunghsing Solar cell and its production method
CN101908582A (zh) * 2010-06-29 2010-12-08 通用光伏能源(烟台)有限公司 一种透光型薄膜太阳能电池组件的制作方法
CN102479844A (zh) * 2010-11-24 2012-05-30 吉富新能源科技(上海)有限公司 用于阻隔红外光的薄膜太阳能电池组成结构
JP5913809B2 (ja) * 2011-01-05 2016-04-27 リンテック株式会社 透明電極基板、その製造方法、該透明電極基板を有する電子デバイス及び太陽電池
US9257579B2 (en) 2012-07-30 2016-02-09 Electronics And Telecommunications Research Institute Electronic devices and method of fabricating the same
KR101541517B1 (ko) 2014-03-26 2015-08-03 부산대학교 산학협력단 단결정 구리를 이용한 나노 망사 다층 구조의 투명전극 및 그 제조방법
KR102032011B1 (ko) 2015-05-15 2019-10-14 주식회사 엘지화학 전도성 적층체 및 이를 포함하는 투명 전극
CN104916709B (zh) * 2015-05-29 2017-08-08 中山大学 一种结构为氧化物‑金属多层膜/硅基太阳电池
CN105449106B (zh) * 2015-12-28 2018-10-23 中国科学院重庆绿色智能技术研究院 一种基于超薄金属的透明电极及其制备方法
CN106847940A (zh) * 2017-02-04 2017-06-13 江苏神科新能源有限公司 一种透明导电叠层和硅基异质结太阳能电池
CN112234106A (zh) * 2019-06-28 2021-01-15 成都珠峰永明科技有限公司 金属tco叠层薄膜及其制备方法和hit太阳能电池
CN113421822B (zh) * 2021-06-16 2024-05-07 华能新能源股份有限公司 一种透明导电电极及其低温制备方法和应用
KR102625556B1 (ko) * 2021-10-27 2024-01-15 인천대학교 산학협력단 다중층의 전면전극을 갖는 투명태양전지 및 그 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003107079A2 (en) * 2002-06-14 2003-12-24 Avery Dennison Corporation Method for roll-to-roll deposition of optically transparent and high conductivity metallic thin films
CN1719619A (zh) * 2004-07-08 2006-01-11 住友化学株式会社 多孔电极、包含该多孔电极的设备及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840002185B1 (ko) * 1981-01-19 1984-11-26 가부시기 가이샤 히다찌 세이샤꾸쇼 광전변환소자
US5264286A (en) * 1988-03-03 1993-11-23 Asahi Glass Company Ltd. Laminated glass structure
US5356656A (en) * 1993-03-26 1994-10-18 Industrial Technology Research Institute Method for manufacturing flexible amorphous silicon solar cell
WO2004032274A1 (ja) * 2002-10-03 2004-04-15 Fujikura Ltd. 電極基板、光電変換素子、導電性ガラス基板およびその製造方法、並びに色素増感太陽電池
JP2004241618A (ja) * 2003-02-06 2004-08-26 Canon Inc 光起電力素子の製造方法
US6936761B2 (en) * 2003-03-29 2005-08-30 Nanosolar, Inc. Transparent electrode, optoelectronic apparatus and devices
JP4760154B2 (ja) * 2005-06-15 2011-08-31 住友金属鉱山株式会社 酸化物焼結体、酸化物透明導電膜、およびこれらの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003107079A2 (en) * 2002-06-14 2003-12-24 Avery Dennison Corporation Method for roll-to-roll deposition of optically transparent and high conductivity metallic thin films
CN1719619A (zh) * 2004-07-08 2006-01-11 住友化学株式会社 多孔电极、包含该多孔电极的设备及其制备方法

Also Published As

Publication number Publication date
KR101352779B1 (ko) 2014-01-16
TW200840061A (en) 2008-10-01
CN101622721B (zh) 2011-06-01
KR20080079891A (ko) 2008-09-02
WO2008105597A1 (en) 2008-09-04
CN101622721A (zh) 2010-01-06

Similar Documents

Publication Publication Date Title
TWI456772B (zh) 用於太陽能電池之透明電極及其製造方法
CN105449010B (zh) 不锈钢衬底柔性铜铟镓硒薄膜太阳电池阻挡层制备方法
JP2004526650A5 (zh)
NO20084125L (no) Et flerlagsbelegg
JP2013048297A5 (zh)
TW201247915A (en) Transparent oxide film and process for producing same
TW201227974A (en) Stacked electrode and photo-electric device having the same
RU2011144649A (ru) Низкоэмиссионное стекло и способ его получения
JP2016517183A (ja) 光電池又は光電池モジュール用のバックコンタクト基材
TW201233836A (en) Method of making a transparent conductive oxide layer
JP2004277780A (ja) 銀系合金の積層構造並びにそれを用いた電極、配線、反射膜及び反射電極
JP4638014B2 (ja) 高耐熱性反射膜、これを用いた積層体、液晶表示素子用反射板及び建材ガラス
Lin et al. Effects of Mg content and annealing treatment on optical and electrical properties of CuMg and ITO/CuMg metallic glass films
CN102751339A (zh) 异质结太阳能电池结构及其制作方法
CN103556120B (zh) 一种制备新型铜合金材料层及薄膜的方法
KR101232717B1 (ko) Ｔｉ-Ｉｎ-Ｚｎ-Ｏ 투명전극 및 이를 이용한 금속 삽입형 3층 구조 고전도도 투명전극과 이의 제조방법
CN209281907U (zh) 一种透明导电膜
Loka et al. The preparation of thermally stable TiNx/Ag (Mo)/TiNx ultrathin films by magnetron sputtering
TW201211276A (en) NiCu alloy target for Cu electrode protection membrane and lamination membrane
Lee et al. Highly transparent and flexible TiN doped In2O3 (ITON)/Ag-Ti/ITON multilayer electrodes coated on polyethylene terephthalate substrate
CN108766631A (zh) 一种复合薄膜
JP2014019932A (ja) Ａｇ合金膜及びその製造方法
CN104505457B (zh) 基于Al/CuO薄膜的热电材料及其制备方法
JP2009194386A (ja) 光起電モジュールおよびその製造方法
TWI469217B (zh) A transparent conductive multilayer film and its manufacturing method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees