JP2010503204A5 - - Google Patents
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- Publication number
- JP2010503204A5 JP2010503204A5 JP2009526620A JP2009526620A JP2010503204A5 JP 2010503204 A5 JP2010503204 A5 JP 2010503204A5 JP 2009526620 A JP2009526620 A JP 2009526620A JP 2009526620 A JP2009526620 A JP 2009526620A JP 2010503204 A5 JP2010503204 A5 JP 2010503204A5
- Authority
- JP
- Japan
- Prior art keywords
- integrated system
- layer
- copper
- barrier layer
- metal barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 103
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 63
- 229910052802 copper Inorganic materials 0.000 claims description 63
- 239000010949 copper Substances 0.000 claims description 63
- 230000004888 barrier function Effects 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 33
- 239000011261 inert gas Substances 0.000 claims description 16
- 238000004320 controlled atmosphere Methods 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 230000000536 complexating effect Effects 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 claims description 6
- 238000007306 functionalization reaction Methods 0.000 claims description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 4
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- -1 perfluorooctanoyl Chemical group 0.000 claims description 3
- 238000011946 reduction process Methods 0.000 claims description 3
- CHEANNSDVJOIBS-MHZLTWQESA-N (3s)-3-cyclopropyl-3-[3-[[3-(5,5-dimethylcyclopenten-1-yl)-4-(2-fluoro-5-methoxyphenyl)phenyl]methoxy]phenyl]propanoic acid Chemical compound COC1=CC=C(F)C(C=2C(=CC(COC=3C=C(C=CC=3)[C@@H](CC(O)=O)C3CC3)=CC=2)C=2C(CCC=2)(C)C)=C1 CHEANNSDVJOIBS-MHZLTWQESA-N 0.000 claims description 2
- GEZGAZKEOUKLBR-UHFFFAOYSA-N 1-phenylpyrrole Chemical compound C1=CC=CN1C1=CC=CC=C1 GEZGAZKEOUKLBR-UHFFFAOYSA-N 0.000 claims description 2
- REHRCHHNCOTPBV-UHFFFAOYSA-N 2,5-dithiophen-2-yl-1h-pyrrole Chemical compound C1=CSC(C=2NC(=CC=2)C=2SC=CC=2)=C1 REHRCHHNCOTPBV-UHFFFAOYSA-N 0.000 claims description 2
- XQEHNEWIRZWJPI-UHFFFAOYSA-N 22-sulfanyldocosanoic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCCCCCCS XQEHNEWIRZWJPI-UHFFFAOYSA-N 0.000 claims description 2
- FTGKPHQQHPCLAI-UHFFFAOYSA-N 3,6-dithiatetracyclo[6.4.0.02,4.05,7]dodeca-1(12),8,10-triene Chemical compound C12=CC=CC=C2C2SC2C2C1S2 FTGKPHQQHPCLAI-UHFFFAOYSA-N 0.000 claims description 2
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 235000021355 Stearic acid Nutrition 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- JMLPVHXESHXUSV-UHFFFAOYSA-N dodecane-1,1-diamine Chemical compound CCCCCCCCCCCC(N)N JMLPVHXESHXUSV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 239000008241 heterogeneous mixture Substances 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 claims description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- YNHJECZULSZAQK-UHFFFAOYSA-N tetraphenylporphyrin Chemical compound C1=CC(C(=C2C=CC(N2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3N2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 YNHJECZULSZAQK-UHFFFAOYSA-N 0.000 claims description 2
- DUYAAUVXQSMXQP-UHFFFAOYSA-M thioacetate Chemical compound CC([S-])=O DUYAAUVXQSMXQP-UHFFFAOYSA-M 0.000 claims description 2
- 150000003573 thiols Chemical class 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052845 zircon Inorganic materials 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 51
- 238000007772 electroless plating Methods 0.000 claims 2
- 239000002346 layers by function Substances 0.000 claims 2
- 238000009713 electroplating Methods 0.000 description 2
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/514,038 US8241701B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a barrier surface for copper deposition |
| US11/514,038 | 2006-08-30 | ||
| US11/639,050 US8916232B2 (en) | 2006-08-30 | 2006-12-13 | Method for barrier interface preparation of copper interconnect |
| US11/639,050 | 2006-12-13 | ||
| PCT/US2007/018250 WO2008027214A2 (en) | 2006-08-30 | 2007-08-17 | Methods and apparatus for barrier interface preparation of copper interconnect |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010503204A JP2010503204A (ja) | 2010-01-28 |
| JP2010503204A5 true JP2010503204A5 (enExample) | 2012-04-26 |
| JP5484053B2 JP5484053B2 (ja) | 2014-05-07 |
Family
ID=39136456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009526620A Expired - Fee Related JP5484053B2 (ja) | 2006-08-30 | 2007-08-17 | 銅配線のバリア界面調整のための方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8916232B2 (enExample) |
| JP (1) | JP5484053B2 (enExample) |
| CN (1) | CN101511494B (enExample) |
| MY (1) | MY157906A (enExample) |
| SG (1) | SG174749A1 (enExample) |
| TW (1) | TWI378533B (enExample) |
| WO (1) | WO2008027214A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090304914A1 (en) * | 2006-08-30 | 2009-12-10 | Lam Research Corporation | Self assembled monolayer for improving adhesion between copper and barrier layer |
| JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
| JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
| US8679970B2 (en) * | 2008-05-21 | 2014-03-25 | International Business Machines Corporation | Structure and process for conductive contact integration |
| JP2010040771A (ja) * | 2008-08-05 | 2010-02-18 | Rohm Co Ltd | 半導体装置の製造方法 |
| EP2159304A1 (en) * | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
| US9177917B2 (en) * | 2010-08-20 | 2015-11-03 | Micron Technology, Inc. | Semiconductor constructions |
| JP5862353B2 (ja) * | 2011-08-05 | 2016-02-16 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US9312203B2 (en) * | 2013-01-02 | 2016-04-12 | Globalfoundries Inc. | Dual damascene structure with liner |
| US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
| US8916469B2 (en) * | 2013-03-12 | 2014-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating copper damascene |
| CN104517893A (zh) * | 2013-09-29 | 2015-04-15 | 格罗方德半导体公司 | 自组装单层原位气相沉积作为铜助粘剂及扩散阻障件的方法 |
| US9269585B2 (en) * | 2014-01-10 | 2016-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for cleaning metal gate surface |
| US9490211B1 (en) * | 2015-06-23 | 2016-11-08 | Lam Research Corporation | Copper interconnect |
| JP6470876B2 (ja) * | 2016-05-16 | 2019-02-13 | 株式会社アルバック | Ｃｕ膜の形成方法 |
| US9768063B1 (en) | 2016-06-30 | 2017-09-19 | Lam Research Corporation | Dual damascene fill |
| US9875958B1 (en) | 2016-11-09 | 2018-01-23 | International Business Machines Corporation | Trace/via hybrid structure and method of manufacture |
| US10731250B2 (en) * | 2017-06-06 | 2020-08-04 | Lam Research Corporation | Depositing ruthenium layers in interconnect metallization |
| TWI757565B (zh) * | 2017-12-22 | 2022-03-11 | 美商應用材料股份有限公司 | 在導電表面上沉積阻擋層的方法 |
| US10801978B2 (en) * | 2018-03-12 | 2020-10-13 | Nova Measuring Instruments, Inc. | XPS metrology for process control in selective deposition |
| JP2019192892A (ja) | 2018-04-18 | 2019-10-31 | 東京エレクトロン株式会社 | 処理システムおよび処理方法 |
| CN109273402B (zh) * | 2018-09-13 | 2020-08-25 | 德淮半导体有限公司 | 金属阻挡层的制作方法、金属互连结构及其制作方法 |
| TWI864099B (zh) | 2019-09-25 | 2024-12-01 | 日商東京威力科創股份有限公司 | 基板液處理方法及基板液處理裝置 |
| US11410881B2 (en) * | 2020-06-28 | 2022-08-09 | Applied Materials, Inc. | Impurity removal in doped ALD tantalum nitride |
| US20250286002A1 (en) * | 2024-03-08 | 2025-09-11 | Applied Materials, Inc. | Aluminum Oxide Crystallization Barrier for Hybrid Bonding |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6017820A (en) * | 1998-07-17 | 2000-01-25 | Cutek Research, Inc. | Integrated vacuum and plating cluster system |
| US6362099B1 (en) | 1999-03-09 | 2002-03-26 | Applied Materials, Inc. | Method for enhancing the adhesion of copper deposited by chemical vapor deposition |
| JP2001015517A (ja) | 1999-07-02 | 2001-01-19 | Ebara Corp | 半導体装置及びその製造方法 |
| US6413858B1 (en) * | 1999-08-27 | 2002-07-02 | Micron Technology, Inc. | Barrier and electroplating seed layer |
| JP4537523B2 (ja) | 2000-02-16 | 2010-09-01 | 富士通株式会社 | Ｃｕ系埋込配線のパルスメッキ方法 |
| KR100775159B1 (ko) * | 2000-05-15 | 2007-11-12 | 에이에스엠 인터내셔널 엔.붸. | 집적회로의 생산 공정 |
| US6777327B2 (en) * | 2001-03-28 | 2004-08-17 | Sharp Laboratories Of America, Inc. | Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics |
| JP4169950B2 (ja) * | 2001-05-18 | 2008-10-22 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6528884B1 (en) * | 2001-06-01 | 2003-03-04 | Advanced Micro Devices, Inc. | Conformal atomic liner layer in an integrated circuit interconnect |
| US6686278B2 (en) * | 2001-06-19 | 2004-02-03 | United Microelectronics Corp. | Method for forming a plug metal layer |
| JP2003059861A (ja) | 2001-08-09 | 2003-02-28 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| KR100805843B1 (ko) * | 2001-12-28 | 2008-02-21 | 에이에스엠지니텍코리아 주식회사 | 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템 |
| AU2003217197A1 (en) * | 2002-01-10 | 2003-07-30 | Semitool, Inc. | Method for applying metal features onto barrier layers using electrochemical deposition |
| US20030143837A1 (en) * | 2002-01-28 | 2003-07-31 | Applied Materials, Inc. | Method of depositing a catalytic layer |
| US20040040504A1 (en) * | 2002-08-01 | 2004-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| US8241701B2 (en) * | 2005-08-31 | 2012-08-14 | Lam Research Corporation | Processes and systems for engineering a barrier surface for copper deposition |
| US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
| WO2004113585A2 (en) * | 2003-06-18 | 2004-12-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
| US20050079703A1 (en) * | 2003-10-09 | 2005-04-14 | Applied Materials, Inc. | Method for planarizing an interconnect structure |
| EP1735824A2 (en) * | 2004-04-14 | 2006-12-27 | University of Massachusetts | Adhesion of a metal layer to a substrate and related structures |
| US7211509B1 (en) * | 2004-06-14 | 2007-05-01 | Novellus Systems, Inc, | Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds |
| US20090304914A1 (en) * | 2006-08-30 | 2009-12-10 | Lam Research Corporation | Self assembled monolayer for improving adhesion between copper and barrier layer |
| DE102004037089A1 (de) * | 2004-07-30 | 2006-03-16 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfermetallisierungsschicht |
| US7476618B2 (en) * | 2004-10-26 | 2009-01-13 | Asm Japan K.K. | Selective formation of metal layers in an integrated circuit |
| US7309658B2 (en) * | 2004-11-22 | 2007-12-18 | Intermolecular, Inc. | Molecular self-assembly in substrate processing |
| US20060240187A1 (en) * | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
| US7514353B2 (en) * | 2005-03-18 | 2009-04-07 | Applied Materials, Inc. | Contact metallization scheme using a barrier layer over a silicide layer |
| US7459392B2 (en) * | 2005-03-31 | 2008-12-02 | Intel Corporation | Noble metal barrier and seed layer for semiconductors |
| US20070098902A1 (en) * | 2005-06-17 | 2007-05-03 | Cornell Research Foundation, Inc. | Fabricating inorganic-on-organic interfaces for molecular electronics employing a titanium coordination complex and thiophene self-assembled monolayers |
| KR100657165B1 (ko) * | 2005-08-12 | 2006-12-13 | 동부일렉트로닉스 주식회사 | 구리 배선의 형성 방법 및 그에 의해 형성된 구리 배선을포함하는 반도체 소자 |
| US20070108063A1 (en) * | 2005-09-28 | 2007-05-17 | Ebara Corporation | Layer forming method, layer forming apparatus, workpiece processing apparatus, interconnect forming method, and substrate interconnect structure |
| US20070099422A1 (en) * | 2005-10-28 | 2007-05-03 | Kapila Wijekoon | Process for electroless copper deposition |
| US7524765B2 (en) * | 2005-11-02 | 2009-04-28 | Intel Corporation | Direct tailoring of the composition and density of ALD films |
| US20070281476A1 (en) * | 2006-06-02 | 2007-12-06 | Lavoie Adrien R | Methods for forming thin copper films and structures formed thereby |
| US7902064B1 (en) * | 2007-05-16 | 2011-03-08 | Intermolecular, Inc. | Method of forming a layer to enhance ALD nucleation on a substrate |
-
2006
- 2006-12-13 US US11/639,050 patent/US8916232B2/en active Active
-
2007
- 2007-08-17 MY MYPI20090659A patent/MY157906A/en unknown
- 2007-08-17 CN CN2007800325321A patent/CN101511494B/zh not_active Expired - Fee Related
- 2007-08-17 WO PCT/US2007/018250 patent/WO2008027214A2/en not_active Ceased
- 2007-08-17 SG SG2011062163A patent/SG174749A1/en unknown
- 2007-08-17 JP JP2009526620A patent/JP5484053B2/ja not_active Expired - Fee Related
- 2007-08-29 TW TW096131988A patent/TWI378533B/zh not_active IP Right Cessation
-
2014
- 2014-12-02 US US14/558,554 patent/US20150128861A1/en not_active Abandoned
- 2014-12-02 US US14/558,548 patent/US20150132946A1/en not_active Abandoned
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