TWI378533B - Methods and apparatus for barrier interface preparation of copper interconnect - Google Patents

Methods and apparatus for barrier interface preparation of copper interconnect Download PDF

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Publication number
TWI378533B
TWI378533B TW096131988A TW96131988A TWI378533B TW I378533 B TWI378533 B TW I378533B TW 096131988 A TW096131988 A TW 096131988A TW 96131988 A TW96131988 A TW 96131988A TW I378533 B TWI378533 B TW I378533B
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Taiwan
Prior art keywords
layer
copper
substrate
barrier layer
deposition
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TW096131988A
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English (en)
Chinese (zh)
Other versions
TW200832613A (en
Inventor
Hyungsuk Alexander Yoon
John Boyd
Yezdi Dordi
Fritz C Redeker
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Lam Res Corp
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Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200832613A publication Critical patent/TW200832613A/zh
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Publication of TWI378533B publication Critical patent/TWI378533B/zh

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    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

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