CN101563758B - 用于阻障层表面钝化的方法和系统 - Google Patents
用于阻障层表面钝化的方法和系统 Download PDFInfo
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- CN101563758B CN101563758B CN2007800468999A CN200780046899A CN101563758B CN 101563758 B CN101563758 B CN 101563758B CN 2007800468999 A CN2007800468999 A CN 2007800468999A CN 200780046899 A CN200780046899 A CN 200780046899A CN 101563758 B CN101563758 B CN 101563758B
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- barrier layer
- passivated surface
- module
- copper
- deposition
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- 230000004888 barrier function Effects 0.000 title claims abstract description 224
- 238000000034 method Methods 0.000 title claims abstract description 114
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Abstract
本发明有关于制造半导体器件的方法和系统。本发明的一个方面是在阻障层上沉积填充铜层以进行半导体器件金属化的方法。在一个实施方式中,该方法包含在基板的表面形成该阻障层并对该阻障层施加工艺条件以在该阻障层上形成可除去的钝化表面。该方法进一步包含从该阻障层上除去该钝化表面以及在该阻障层上沉积该填隙铜层。本发明的另一个方面是在阻障层上沉积填充铜层以进行半导体器件金属化的集成系统。在一个实施方式中,该集成系统包含至少一个工艺模块,被配置为阻障层沉积和钝化表面形成以及至少另一个工艺模块,被配置为除去钝化表面和在该阻障层上沉积铜。该系统进一步包含至少一个耦合的以便该基板能够在该模块之间传送而大体上不暴露于含氧环境。
Description
交叉引用
本申请有关于美国专利申请文献号XCR-002,名称为“METHODS AND SYSTEMS FOR LOW INTERFACIAL OXIDECONTACT BETWEEN BARRIER AND COPPERMETALLIZATION”,申请人为Fritz REDEKER,John BOYD,YezdiDORDI,Alex YOON,and Shijian LI,申请日为12/18/2006的美国专利申请,05/25/2006申请的、申请序列号为11/382,906的美国专利申请,06/28/2006申请的、申请序列号为11/427,266的美国专利申请,07/27/2006申请的、申请序列号为11/461,415的美国专利申请,08/30/2006申请的、申请序列号为11/514,038的美国专利申请,02/03/2003申请的、申请序列号为10/357,664的美国专利申请,02/03/2003申请的、申请序列号为10/357,664的美国专利申请,06/28/2004申请的、申请序列号为10/879,263的美国专利申请以及06/27/2003申请的、申请序列号为10/607,61的美国专利申请,所有这些专利或专利申请的内容均皆由引用纳入此处。
背景技术
本发明涉及比如集成电路、存储单元等使用铜金属化来制造的半导体器件的金属化的改进的方法和系统;更准确地说,本发明有关于硅集成电路的铜基底金属化的方法和系统。
半导体器件制造的一个重要的部分是器件的金属化,以使器件元件电性互连。对于许多这样的器件,可选的金属化方法包 括使用铜金属线路。使用铜金属线路的金属化系统还必须使用阻障材料以使铜与该电子器件的铜敏感区隔离。所考虑的一些铜金属化的阻障层是比如钽和比如氮化钽这样的材料。使用铜的金属化系统的常用的制造工艺包括将铜沉积在阻障层上。将铜沉积在该阻障层上的优选的工艺是无电铜沉积。
对于铜金属化使用的标准技术,出现了一个问题:许多的优选的阻障材料,比如钽和氮化钽,如果曝露在空气中一个较长的时间长度的话,可能在该阻障层的表面上形成氧化物,比如氧化钽和钽的氧氮化物。已经知道,如果该阻障层上有氧化物存在的话,铜在阻障层上的无电沉积就会被抑制。另外,铜的确与阻障层上的氧化物粘着,而且它还与纯净的阻障金属或金属富集的阻障层表面(比如钽和氮化钽上的钽富集表面)粘着。这里提到钽和/或氮化钽阻障层仅仅是作为例子;其它的阻障层材料也存在类似问题。不良粘着可能对半导体器件的电迁移性能和可靠性带来负面影响。另外,阻障层表面上氧化钽或钽的氧氮化物的形成可能增强阻障层的电阻率。更准确地说,阻障层和铜的复合物之间的氧化物的存在可能降低使用标准的铜金属化技术制造的电子器件的性能并降低电子器件的可靠性。
显然,许多应用都要求高性能高可靠性的电子器件。使用铜金属化来制造电子器件的标准技术表明,需要允许使用具有改进的性能和改进的可靠性的铜金属化来制造电子器件的方法和系统。
发明内容
本发明涉及比如集成电路、存储单元等使用铜金属化来制造的半导体器件的标准技术中的一个或多个缺点。
本发明的一个方面是提供一种在过渡金属阻障层或过渡金属化合物阻障层上沉积填隙铜层用于集成电路金属化以便在其间产生基本上不含氧的界面的方法。在一个实施方式中,该方法包括形成在基板的表面形成该阻障层并对该阻障层施加工艺条件以在该阻障层上形成可除去的钝化表面。该方法进一步包含从该阻障层上除去该钝化表面以及在该阻障层上沉积该填隙铜层。
本发明的另一个方面是提供一种在过渡金属阻障层或过渡金属化合物阻障层上沉积填隙铜层用于集成电路金属化以便在其间产生基本上不含氧的界面的集成系统。在一个实施方式中,该集成系统包含至少一个工艺模块,其被配置为阻障层沉积和钝化表面形成,以及至少另一个工艺模块,被配置为除去钝化表面和在该阻障层上沉积铜。该系统进一步包含至少一个传送模块,耦合于该至少一个工艺模块和该至少另一个工艺模块。该至少一个传送模块被配置以便该基板能够在这些模块之间传送而大体上不暴露于含氧环境。
应当理解,本发明不将其应用限制于在下述说明中提到的以及在附图中描绘的元件的构造细节和装置。本发明有其他的实施方式且能够被以多种方式实现和执行。而且,应当理解,此处所用的语句和术语是出于描述的目的而不应当被理解为限制。
如此,本领域的技术人员可以理解,该观念,本揭示即基于该观念,容易作为其他用来执行本发明的各方面的结构、方法和系统的设计基础。因此,重要的是,权利要求应当被认为包括这种等同结构因为其不悖离本发明的精神和范围。
附图说明
图1是本发明的一个实施方式的工艺流程图。图1A是本发明的一个实施方式的工艺流程图。
图2是本发明的一个实施方式的图解。
图3是本发明的一个实施方式的图解。
图4是本发明的一个实施方式的图解。
图5是本发明的一个实施方式的图解。
图6是本发明的一个实施方式的图解
图7是本发明的一个实施方式的图解。
本领域的技术人员可以理解,图中的元件是简单而清楚的表示的,不一定是按照比例描绘。例如,图中一些元件的尺寸可能相对于其它的元件是夸大的,以便于促进对本发明的实施方式的理解。
具体实施方式
本发明有关于制造半导体器件的方法和系统。更准确地说,本发明有关于使用阻障层和金属线路对集成电路金属化。下面会对本发明的实施方式的操作进行描述,主要是,以过渡金属阻障层或过渡金属化合物阻障层和铜金属线路作为硅集成电路为背景。然而,应当理解,依照本发明的实施方式可被用于其他的金属化系统,在该金属化系统中在阻障层和金属线路之间需要大体上无氧的界面。
在下面对附图的描述中,使用同样的参考标号代表所有附图共有的实质上相同的元件或步骤。
在下面的描述中,这里定义的术语“钝化表面”是指,没有形成一定数量的氧化化合物而且该钝化表面的元件不包含一定数量的氧键。而且,钝化表面是以对氧的迁移有抵抗力为特征的,否则它就会阻止随后的工艺步骤中钝化表面下的材料的真正氧化。还应当理解,钝化表面可能具有原子单层的厚度,但是不限于单层的厚度。对本发明的一些实施方式来说,该钝化表面可能具有大于单层厚度的厚度。
现在参考图1,其中显示了依照本发明的一个实施方式的工艺流程图20。工艺流程图20显示了在过渡金属阻障层或过渡金属化合物阻障层上沉积填隙铜层用于集成电路金属化以便在其间产生基本上不含氧的界面。工艺流程图20包括步骤25、步骤30、步骤35和步骤40。步骤25包括在基板表面上形成阻障层。步骤30包括对该阻障层施加至少一个可控工艺条件以便在阻障层上形成可移除的钝化表面。步骤35包括从该阻障层上移除该钝化表面。步骤40包括在该阻障层沉积填隙铜层。执行工艺流程20以便阻障层和填隙铜层之间大体上没有氧化物存在。
通过选择各种选项来执行流程图20中显示的步骤,可以获得本发明的许多实施方式。步骤25可以由一个或多个工艺完成,比如物理气相沉积、化学气相沉积和原子层沉积。在步骤25中,可以使用多种材料或材料系统来形成阻障层。选择作为阻障层的材料将是影响用来形成阻障层的工艺的选择的因素。在本发明的一个优选实施方式中,步骤25包括形成阻障层,该阻障层包括过渡金属或过渡金属化合物。对于铜金属化系统,本发明的实施方式的优选的阻障层材料是钽、氮化钽或两者的结合。钽和氮化钽可以通过物理气相沉积工艺沉积。然而,对于本发明的优选实施方式来说,步骤25是使用原子层沉积完成的,以沉积氮化钽阻障层。
进一步的步骤对于本发明的一些实施方式是可选的(图1中未示),包括在阻障形成以后处理该阻障层的表面。处理该阻障层的表面可以用多种方式执行;选择该步骤以便为接下来的处理步骤准备该阻障层的表面。处理该阻障层的表面主要是针对改善表面粘着性或改善沉积在该阻障层上的层的接触阻抗。依照本发明的一个实施方式,处理该阻障层的表面包括对该阻障层的表面施加含氢等离子体。该含氢等离子体可被配置为除去阻障层表面上的污染物或其它材料以便将阻障层表面上的金属氧化物或金属氮化物分解为金属从而在该阻障层的表面上产生金属富集表面。处理该阻障层的表面的合适的含氢等离子体的一个实施例在申请序列号为11/514,038,申请日为2006年8月30日的共同持有的美国专利申请中有所描述,其内容皆由引用纳入此处。
作为另一种选择,处理该阻障的表面可包括使该阻障层的表面富含金属,例如通过将金属沉积在该阻障层的表面上。本发明的实施方式的一个优选的处理阻障表面的方法包括使用等离子体注入工艺沉积金属以使金属合并到阻障层的表面。优选地,处理该阻障层表面是作为步骤25的一部分或者是在阻障层上形成该可除去的钝化表面之前的工艺中的另一点上执行的。应当理解,处理该阻障层表面不是本发明的所有实施方式的要求的步骤。
依照本发明的优选实施方式,选择用来在该阻障层上形成该可除去的钝化表面的工艺条件,以便该钝化表面大体上是无氧的。这意味着,选择工艺条件以便其不需要使用氧或氧化合物,氧或氧化合物可能导致该阻障层表面的氧化或者在钝化表面中掺入氧。
多种工艺和工艺条件可被用于工艺流程20的步骤30。作为步骤30的选项,在步骤25中,可以使用原子层沉积或物理气相沉积以在阻障层上形成钝化表面。在本发明的一个实施方式中,步骤 30包括沉积有效量的钌以形成该钝化表面。该有效量的钌包含的量足以大体上阻止下面的阻障层上或阻障层中氧化物的形成。对本发明的一些实施方式,被用来阻止氧化的钌的厚度可以是大约2-10个单层。对本发明的其它实施方式,步骤30包括沉积有效量的钴、铑、铼、锇、铱和钼中的至少一种,以形成该钝化表面。再次,该有效的量包含的量足以大体上阻止下面的阻障层上或阻障层中氧化物的形成。
作为本发明的实施方式的另一个选项,工艺流程20的步骤30是通过形成包含硅的钝化表面完成的。更准确地说,对于一个实施方式,步骤30包括对该阻障层施加包含硅的活性气体以便能得到硅从而形成该钝化表面。可选地,步骤30可包括硅化工艺,其中将硅沉积在过渡金属或过渡金属化合物阻障层的表面上。加热该阻障层和该硅有效量以在该阻障层的表面上形成具有过渡金属的硅化物。作为另一个选项,步骤30可包括在该阻障层上沉积金属和硅以形成硅化物作为该钝化表面。在本发明的一个优选实施方式中,工艺流程20使用钽或者氮化钽作为阻障层且步骤30包括形成硅化钽作为钝化表面。
如上所述,本发明的实施方式不限于通过在阻障层上沉积一个材料层形成的钝化表面。可选地,该钝化表面可以是通过与该阻障层表面的化学反应以在该阻障层的表面形成卤素化合物形成的,其中该卤素化合物足以防止该阻障层上和该阻障层中氧化物的真正形成。依照发明的一个实施方式,工艺流程20的工艺步骤30是通过对该阻障层施加活性气体以形成该钝化表面来完成的,其中该活性气体包含元素氟、溴和碘中的一种或多种。优选地,该活性气体是从包含元素氟、溴和碘中的一种或多种的化合物中产生的。作为一个选项,该活性气体可以是从使用合适的输入气体的辉光放 电等离子体中产生的,比如包含元素氟、溴和碘中的一种或多种的辉光放电等离子体。
形成阻障层的工艺如步骤25所示,且工艺流程20可以是使用一种工艺进行的,在该工艺中,在阻障沉积步骤过程中使用静电卡盘将该基板固定在适当的位置。固定该基板的静电力的产生通常被称为卡持(chucking)该基板。中和该静电力以松开该基板通常被称为解卡持(dechucking)。对一些工艺来说,解卡持包括在适当的工艺条件下运行等离子体以中和该静电力以便该基板可以被松开。
本发明的另一个实施方式是如图1所示的工艺流程,其中步骤25在阻障层形成过程中使用静电卡盘来固定该基板,且步骤30使用等离子体工艺条件以形成该钝化表面同时也提供解卡持该基板的条件。更准确地说,对于本发明的有些实施方式,步骤30使用等离子体中的活性气体以形成该钝化表面并提供解卡持该基板的电荷。一种途径将是将通常被用来解卡持该基板一种或多种气体替换为用来形成该钝化表面的一种或多种活性气体。一些合适的气体的实施例是包含元素氟、溴和碘中的一种或多种的气体。
步骤35包括从该阻障层上除去该钝化表面,且可以通过各种工艺完成,比如干法刻蚀工艺以及比如液体化学刻蚀工艺。作为选项,该干法刻蚀工艺可以是这样的工艺,比如使用活性气体刻蚀以除去该钝化表面,以及比如等离子体增强刻蚀工艺。液体刻蚀工艺的实施例是使用酸性溶液刻蚀、使用碱性溶液刻蚀以及使用溶剂除去。对于本发明的一个优选实施方式,选择具有这样特性的钝化表面以便它可以通过用来进行无电铜沉积的溶液除去。换句话说,本发明的一个优选实施方式包括除去该钝化表面,作为无电铜沉积工艺的一部分。
更优选地,该钝化表面具有特征,以便在使用水溶液进行无电铜沉积的过程中具有生存能力。这意味着,优选地,该钝化表面得以完整保留以保护该阻障层免于氧化且该钝化表面在无电镀铜过程中被原地除去。
可以使用多种工艺和工艺条件来执行步骤40。作为步骤40的一个选项,无电沉积可用于在步骤25中形成的该阻障层上沉积该填隙铜层。在一个更优选的实施方式中,步骤40包括使用无电沉积以沉积铜种晶层,然后电镀铜填隙层。无电铜沉积和电化学镀工艺是熟知的湿法工艺。
在本发明的又一个实施方式中,工艺流程20进一步包含以下两个步骤中的至少一个:存储阻障层上具有钝化表面的基板一定的时间和将该基板传送到预处理模块以对该基板进行预处理以沉积该填隙铜层。本发明的这种实施方式适于钝化表面,该钝化表面能够在环境条件下在传送和存储过程中保护下面的阻障层免于形成氧化物,而不是那些在真空传送模块或受控环境传送模块中的。更特别地,本发明的这种实施方式使用钝化表面,该钝化表面可以在较长的时间段内或者在暴露于没有该钝化表面可能会或者可能不会导致氧化物形成的工艺条件中时,防止下面的阻障层的氧化物的真正形成。本发明的一个实施方式包括工艺流程20,其中该钝化表面被配置为,当在含氧的环境下传送或存储具有该钝化表面的阻障层时,防止阻障层上氧化物的真正形成。
依照本发明的另一个实施方式,工艺步骤30包括在该阻障层上形成钝化表面,其对于铜的无电沉积具有自动催化特性。更准确地说,步骤30中形成的该钝化表面具有保护下面的阻障层免于形成氧化物的特征。该钝化表面还具有促进铜的无电沉积的特征。在本发明的一个实施方式中,该钝化表面参与置换反应,其中无电沉积溶液中的铜置换钝化表面的材料。
应当理解,对本发明的一些实施方式,步骤35是可选步骤。换句话说,本发明的另一个实施方式是图1A所示的工艺流程,该工艺流程包括步骤25、步骤31和步骤40;没有使用步骤35。尤其是,该钝化表面没有被除去,且作为该阻障和铜互连材料的整体元件在无电镀铜或其它的铜沉积工艺过程中保存下来。步骤25与图1所述的工艺流程基本相同。步骤31与图1所述的工艺流程步骤30基本相同,只是钝化表面在接下来的工艺中不需要去除。步骤41与步骤40基本相同,只是铜被沉积到该钝化表面上。
现在参考图2,其中显示了依照本发明的一个实施方式的示例性集成系统50的示意图,以在基板上的过渡金属阻障层或者过渡金属化合物阻障层上沉积铜层用于集成电路金属化。配置集成系统50以在该阻障层和该铜层之间制造大体上无氧的界面。配置集成系统50的一个优选实施方式以大体上执行工艺流程20及其变种的各步骤。
对于图2所示的实施方式,集成系统50包含至少一传送模块52、阻障沉积模块58、钝化表面形成模块60、钝化表面除去模块63和铜填隙模块65。配置集成系统50以便它允许,在不想要氧化物形成的关键步骤中,使该基板表面对氧有最小的暴露。另外,因为它是一个集成系统,该基板可以从一个工艺模块立即传送到下一站,这限制了暴露到氧中的时间。
依照本发明的一个实施方式,配置集成系统50,以在图1的工艺流程20及其变种的整个工艺序列中处理基板。更准确地说,配置阻障沉积模块58,以在基板上形成阻障层。优选地,阻障沉积模块58被配置为沉积阻障层材料比如钽、氮化钽和二者的结合。作为一个选项,配置阻障沉积模块58,以进行该阻障层的物理气相沉积或者该阻障层的原子层沉积。在一个优选实施方式中,阻障沉积模块58被配置为进行原子层沉积。在一种可能的结构中,阻障沉积 模块58被配置为进行工作于小于1托气压下的原子层沉积工艺。作为另一个选项,阻障沉积模块58被配置为进行高压工艺的原子层沉积,该高压工艺使用超临界CO2和有机金属前体以形成该阻障层。在又一个结构中,阻障沉积模块58被配置为进行工作于小于1托气压下的物理气相沉积工艺。使用超临界的CO2的高压工艺的示例性反应器的细节在申请序列号为10/357,664,名称为“Method andApparatus for Semiconductor Wafer Cleaning Using High-FrequencyAcoustic Energy with Supercritical Fluid”,申请日为2003年2月3日的共同转让的专利申请中描述过,其内容皆由引用纳入此处。一旦该阻障层形成之后,在可控的周围环境下传送基板以限制对氧的暴露;这是通过传送模块52完成的。
钝化表面形成模块60被配置为在该阻障层上形成上面定义的钝化表面。钝化表面形成模块60可以是由可形成该钝化表面的各种结构来实现的。在一种结构中,钝化表面形成模块60被配置为对该阻障层施加包含元素氟、溴和碘中的一个或多个的活性气体混合物,以在该阻障层上形成卤素化合物,该卤素化合物足以防止下面的阻障层的氧化。作为一个进一步的选项,钝化表面形成模块60被配置为在包含元素氟、溴和碘中的一个或多个的的气体中产生等离子体,以形成该钝化表面。
可选地,钝化表面形成模块60被配置为对该阻障层施加包含硅的活性气体以在该阻障层上沉积一薄层硅。在另一个实施方式中,钝化表面形成模块60被配置为对该阻障层施加包含硅的活性气体并加热该基板有效量以在该阻障层的表面形成过渡金属硅化物。钝化表面形成模块60可以被配置以进行其他类型的硅化工艺以形成该钝化表面。作为另一个选项,钝化表面形成模块60被配置为在该阻障层上沉积金属和硅以形成硅化物。对于一个优选实施方式,钝化表面形成模块60被配置为进行原子层沉积有效量的钴、铑、 铼、锇、铱和钼的至少一种,以大体上阻止下面的阻障层的氧化。更特别地,对本发明的一些实施方式,该钝化表面形成模块包含原子层沉积模块、硅沉积模块或硅化模块。
依照本发明的一个实施方式,钝化表面形成模块60是沉积模块。合适类型的沉积模块的实施例是化学气相沉积模块、原子层沉积模块、等离子体增强化学气相沉积模块和物理气相沉积模块。该沉积模块在该阻障层的表面上沉积该钝化表面的材料。
依照本发明的另一个实施方式,钝化表面形成模块是化学反应器,其引起与该阻障层表面的化学反应。该化学反应的产品形成该钝化表面。
钝化表面除去模块63被配置为从该阻障层上除去该钝化表面。钝化表面除去模块63可以由各种结构实现。对于本发明的特定实施方式,钝化表面除去模块63的结构取决于要除去的钝化表面的类型。
作为一个选项,钝化表面除去模块63是干法刻蚀模块,其使用活性气体以除去该钝化表面,或等离子体刻蚀模块,比如配置为进行等离子体增强刻蚀工艺的模块。作为另一个选项,钝化表面除去模块63是液体刻蚀模块,其使用这样的工艺,比如使用酸性溶液刻蚀,使用碱性溶液刻蚀和使用溶剂除去。对于本发明的一个优选实施方式,配置钝化表面除去模块63以便其工艺与接下来的沉积铜的工艺兼容。
依照本发明的一个优选实施方式,选择该钝化表面的特性以便该钝化表面具有一定量的生存能力以在无电铜沉积工艺过程中提供一些保护,免于氧化。更准确地说,这意味着,选择该钝化表面以便在该无电铜沉积工艺中它被除去。作为一个选项,当铜 沉积在该阻障层的表面上时,从该阻障层除去该钝化表面。一个额外的选项包括原封不动地保留该钝化表面并直接在该钝化表面上沉积该铜层。
铜填隙模块65被配置为沉积填隙铜层。可选地,铜填隙模块65可被配置为使用无电沉积、电化学镀或无电沉积和电化学镀沉积该填隙铜层。更准确地说,铜填隙模块65可被配置为在该阻障表面上沉积保形的铜种晶层,然后是厚的铜填隙(或体量填充)工艺。在一个实施方式中,铜填隙模块65被配置为执行无电工艺以制造保形的铜种晶层。铜填隙模块65可以进一步被配置为通过无电沉积工艺或电化学镀工艺进行厚的铜体量填充工艺。无电铜沉积和电化学镀工艺是熟知的湿法工艺。对于要集成到具有可控的处理和传送环境的湿法工艺,反应器必须与漂洗/干燥器集成以具备干入/干出工艺能力。另外,必须将该系统充满惰性气体以保证该基板对氧的最小暴露。最近,干入/干出的无电铜工艺已经开发出来。进一步,将工艺中用到的所有的流体除气,也就是说,通过市场上可买到的除气系统除去溶解的氧。
无电沉积的环境也必须是可控的,以提供低(或受限的)水平的氧和湿气(水蒸汽)。在铜填隙模块65还可以使用惰性气体,以保证该处理环境中的氧的低水平。铜填隙模块65可被配置为以许多方式执行该无电沉积工艺,比如水池镀(puddle-plating),其中流体被分发到基板上并被允许在静止状态下发生反应,然后除去并丢弃或者回收该反应物。在另一个实施方式中,铜填隙模块65包括趋近工艺头以限制该无电工艺液体以便它仅仅与该基板表面的有限区域接触。不在该趋近工艺头下方的基板表面是干燥的。这种工艺和系统的细节可以在申请号为10/607,611,名称为“Apparatus AndMethod For Depositing And Planarizing Thin Films Of SemiconductorWafers”,申请日为2003年6月27日的美国专利申请,以及申请号为 10/879,263,名称为“Method and Apparatus For Plating SemiconductorWafers”,申请日为2004年6月28日的美国专利申请中描述过,两者的内容皆纳入此处。
该至少一个传送模块52被配置为在真空下传送该基板或在可控环境下传送该基板。替代地,该至少一个传送模块52可包含两个传送模块,一个传送模块被配置为在真空下传送而第二个传送模块被配置为在可控环境下传送。传送模块52被耦合于阻障沉积模块58、钝化表面形成模块60、钝化表面除去模块63和铜填隙模块65。配置传送模块52以便基板可以在模块之间传送而大体上不会暴露于含氧环境或氧化物形成环境。
湿法工艺,比如那些在铜填隙模块65中进行的和那些可能在钝化表面除去模块63中进行的,通常工作于接近大气压下,而干法工艺,比如那些在阻障沉积模块58、钝化表面形成模块60和可能地钝化表面除去模块63中进行的通常工作于小于1托气压下。因此,集成系统50必须能够处理干法和湿法工艺的组合。至少在一个传送模块52中装备有一个或多个机械手,以将基板从一个工艺区域移动到另一个工艺区域。该工艺区域可以是基板盒、反应器或加载锁(图2中基板盒和加载锁未示)。
如上所述,重要的是,在形成该钝化表面之前,控制处理和传送环境以最小化该阻障层表面对氧的暴露以避免该阻障层上氧化物的形成。该基板应该在可控环境下进行处理,其中该环境或者是在真空下,或者是充满一种或多种惰性气体,以限制该基板对氧的暴露。为了提供基板传送的可控环境,配置传送模块52以便该环境是可控的从而是无氧的。在一个示例性结构中,传送模块52被配置为在基板传送过程中,有一种或多种惰性气体充满该传送模块。而且,将工艺中用到的所有的流体除气,也就是说,通过市场 上可买到的除气系统除去溶解的氧。示例性的惰性气体包括氮(N2)、氦(He)、氖(Ne)、氩(Ar)、氪(Kr)和氙(Xe)。
现在参考图3,其中显示了依照本发明的另一个实施方式的示例性集成系统100的示意图,以在基板上的过渡金属阻障层或者过渡金属化合物阻障层上沉积铜层以进行集成电路金属化。配置集成系统100以在该阻障层和该铜层之间制造大体上无氧的界面。配置集成系统100的一个优选实施方式以大体上执行工艺流程20及其变种的各步骤。
集成系统100包含与阻障沉积模块108、加载锁110、阻障处理模块113和钝化表面形成模块115相连接的真空传送模块105。集成系统100还包括与钝化表面除去模块125相连接的可控环境传送模块120、铜种晶沉积模块128和铜填隙模块130。第二加载锁123被包括在集成系统100中以连接真空传送模块105和可控环境传送模块120。
对于集成系统100,配置阻障沉积模块108以必要地具有和上述阻障沉积模块58相同的结构;配置钝化表面形成模块115以必要地有和上述钝化表面形成模块60相同的结构。提供加载锁110以允许基板传送到真空传送模块105同时保持真空传送模块105的真空条件。
阻障处理模块113被配置为在阻障层形成以后处理该阻障层的表面。更准确地说,配置阻障处理模块113以接下来的工艺步骤准备该阻障层的表面。首先,阻障处理模块113被配置为产生阻障层的表面性质的改进,以获得表面粘着性的改进并改进沉积在阻障层上的层的接触电阻。依照本发明的一个实施方式,阻障处理模块113包括等离子体室,该等离子体室被配置为对该阻障层的表面施加含氢等离子体以除去该阻障层表面上的污染物或分解阻障 层表面上形成的金属氧化物以在该阻障层的表面产生金属富集表面。
作为另一个选项,阻障处理模块113被配置为,比如通过将金属沉积在该阻障层的表面上,使该阻障层的表面富含金属。在一个优选结构中,阻障处理模块113包括等离子体室,该等离子体室被配置为进行金属的等离体注入。被注入的金属与该阻障层的表面合并以产生该阻障层的金属富集表面。
真空传送模块105被配置为工作在真空下(<1托)。可控环境传送模块120被配置为工作于1个大气压附近。加载锁123被放置在真空传送模块105和可控环境传送模块125之间以允许基板在这两个工作在不同气压下的模块间传送,同时保持每个传送模块内的环境的完整。加载锁123被配置为是工作于小于1托气压的真空下,或在实验室环境下,或被充满惰性气体,该惰性气体是从一组惰性气体中选出的。
钝化表面除去模块125被配置为除去在钝化表面形成模块115中形成的该钝化表面。优选地,钝化表面除去模块125被配置为使用工作于大约大气压下的工艺除去该钝化表面,比如使用液体化学品以除去该钝化表面的除去工艺。在一个实施方式中,钝化表面除去模块125包含液体刻蚀工艺模块,其被配置为执行液体刻蚀工艺,比如使用酸性溶液刻蚀、使用碱性溶液刻蚀和使用溶剂除去。对于本发明的一个更优选的实施方式,配置钝化表面除去模块63以便其工艺与接下来的沉积铜的工艺兼容。
铜种晶沉积模块128被配置为在该阻障表面上沉积保形的铜种晶层。优选地,铜种晶沉积模块128被配置为执行无电工艺以制造该铜种晶层。铜填隙模块130被配置为通过无电沉积工艺或电化学镀工艺进行厚的铜体量填充工艺。如上所述,无电铜沉积和 电化学镀工艺是熟知的湿法工艺。对于要集成到具有可控的处理和传送环境的湿法工艺,反应器必须与漂洗/干燥器集成以具备干入/干出工艺能力。另外,必须将该系统充满惰性气体以保证该基板对氧的最小暴露。最近,干入/干出的无电铜工艺已经开发出来。进一步,将工艺中用到的所有的流体除气,也就是说,通过市场上可买到的除气系统除去溶解的氧。
湿法工艺,比如那些在钝化表面除去模块125、铜种晶沉积模块128和铜填隙模块130中进行的,通常工作于接近大气压下,而干法工艺,比如那些在阻障沉积模块108、表面形成模块115和阻障清洁模块113中进行的,通常工作于小于1托气压下。因此,集成系统50必须能够处理干法和湿法工艺的组合。真空传送模块105和可控环境传送模块120装备有一个或多个机械手,以将基板从一个工艺区域移动到另一个工艺区域。该工艺区域可以是基板盒、反应器或加载锁(图3中基板盒和加载锁未示)。
现在参考图4,其中显示了依照本发明的另一个实施方式的示例性集成系统150的示意图,以在基板上的过渡金属阻障层或者过渡金属化合物阻障层上沉积铜层以进行集成电路金属化。配置集成系统150以在该阻障层和该铜层之间制造大体上无氧的界面。配置集成系统150的一个优选实施方式以大体上执行工艺流程20及其变种的各步骤。
集成系统150包含与阻障沉积模块108、加载锁110、阻障处理模块113和钝化表面形成模块115A相连接的真空传送模块105。集成系统150还包括与铜种晶沉积模块相连接的可控环境传送模块120和铜填隙模块130。第二加载锁123被包括在集成系统150中以连接真空传送模块105和可控环境传送模块120。
集成系统150与图3中描述的集成系统100基本相同,除了配置集成系统150以便钝化表面形成模块115A形成钝化表面之外,其中该钝化表面在无电铜沉积过程中在原地被除去。换句话说,该钝化表面具有用来无电铜沉积的水溶液的一些生存能力。该钝化表面在铜种晶沉积模块128或铜填隙模块130中被除去,作为为铜种晶沉积或铜填隙作准备的一部分。更准确地说,集成系统150包括铜种晶沉积模块128,其被配置为除去钝化表面并沉积铜种晶。可选地,该钝化表面在铜种晶沉积模块128或铜填隙模块130中被维持,作为铜种晶沉积或铜填隙的一部分。
现在参考图5,其中显示了依照本发明的另一个实施方式的示例性集成系统175的示意图,以在基板上的过渡金属阻障层或者过渡金属化合物阻障层上沉积铜层以进行集成电路金属化。配置集成系统175以在该阻障层和该铜层之间制造大体上无氧的界面。配置集成系统175的一个优选实施方式以大体上执行工艺流程20及其变种的各步骤。
集成系统175包含与阻障沉积和钝化表面形成模块108A和加载锁110相连接的真空传送模块105。集成系统175还包括与钝化表面除去模块125相连接的可控环境传送模块120、铜种晶沉积模块128和铜填隙模块130。第二加载锁123被包括在集成系统100中以连接真空传送模决105和可控环境传送模块120。
集成系统175与图3中描述的集成系统100基本相同,除了配置集成系统175以便模块108A形成阻障层而且还在该阻障层上形成钝化表面以外。而且,集成系统175不要求处理该阻障层以进行某些应用的单独模块。配置集成系统175以便该钝化表面在钝化表面除去模块125中被除去。
现在参考图6,其中显示了依照本发明的另一个实施方式的示例性集成系统200的示意图,以在基板上的过渡金属阻障层或者过渡金属化合物阻障层上沉积铜层以进行集成电路金属化。配置集成系统200以在该阻障层和该铜层之间制造大体上无氧的界面。配置集成系统200的一个优选实施方式以大体上执行工艺流程20及其变种的各步骤。
集成系统200包含与阻障沉积和钝化表面形成模块108B和加载锁110相连接的真空传送模块105。集成系统200还包括与铜种晶沉积模块128和铜填隙模块130相连接的可控环境传送模块120。第二加载锁123被包括在集成系统150中以连接真空传送模块105和可控环境传送模块120。
集成系统200与图4中描述的集成系统150基本相同,除了配置集成系统200以便模块108B形成阻障层而且还在该阻障层上形成可在无电铜沉积过程中原地除去的钝化表面以外。集成系统225与图6中描述的集成系统200基本相同,除了配置集成系统225以便钝化表面除去和铜填隙模块132除去该钝化表面并沉积该铜填隙层以外。在铜种晶沉积模块128或铜填隙模块130中除去该钝化表面,作为为铜种晶沉积作准备的一部分。更准确地说,集成系统200包括铜种晶沉积模块128,其被配置为除去钝化表面并沉积铜种晶。
现在参考图7,其中显示了依照本发明的另一个实施方式的示例性集成系统225的示意图,以在基板上的过渡金属阻障层或者过渡金属化合物阻障层上沉积铜层以进行集成电路金属化。配置集成系统225以在该阻障层和该铜层之间制造大体上无氧的界面。配置集成系统225的一个优选实施方式以大体上执行工艺流程20及其变种的各步骤。
集成系统225包含与阻障沉积钝化表面形成模块108B和加载锁110相连接的真空传送模块105。集成系统225还包括与钝化表面除去和铜填隙模块132相连接的可控环境传送模块120。第二加载锁123被包括在集成系统150中以连接真空传送模块105和可控环境传送模块120。
集成系统225与图6中描述的集成系统200基本相同,除了配置集成系统225以便钝化表面除去和铜填隙模块132除去该钝化表面并沉积该铜填隙层以外。在一个实施方式中,模块132被配置为使用无电铜沉积工艺,为了该工艺,在模块108B中形成的该钝化表面在无电铜沉积过程中被原地除去。该钝化表面在模块132中被除去,作为为铜种晶沉积或铜填隙作准备的一部分。
本发明的另一个实施方式是用于将铜层沉积在过渡金属阻障层或过渡金属化合物阻障层上以进行集成电路金属化的系统。该系统包含阻障沉积和钝化表面形成模块,其被配置为在基板上形成阻障层并被配置为在该阻障层上形成钝化表面。该系统进一步包含钝化表面除去和铜沉积模块,其被配置为从该阻障层除去该钝化表面并被配置为在该阻障层上沉积铜层。在钝化表面形成模块和该钝化表面除去和铜沉积模块中的阻障沉积被处理以便在该阻障沉积和钝化表面形成模块中处理过的基板,在暴露在含氧环境中、存储一定时间、和存储在无氧环境中一定时间中的至少一个以后,可以在该钝化表面除去和铜沉积模块中被处理。此实施方式的系统不要求与钝化表面形成模块和钝化表面除去和铜沉积模块中的阻障沉积连接。
在前述详细说明中,参考具体的实施方式对本发明进行了描述。然而,本领域的普通技术人员可以理解,在不悖离权利要求所述的本发明的范围的情况下,可以作出各种修改和改变。相应 地,该详细说明和附图意为说明性的而不是限制性的,而且所有的这些修改都被认为是包括在本发明的范围内。
上面参靠具体实施方式描述了利益、优点和问题的解决方案。然而,该利益、优点、问题的解决方案,以及可能导致任何利益、优点或问题的解决方案的任何元件的出现或变成再次宣告都不被认为是任何或全部权利要求的关键的、要求的或必需的特征或元件。
此处所用的术语“包含”、“包括”、“具有”、“至少一个”或其任何其他的变形,都意在涵盖非排除性的内涵。例如,包含一系列元件的工艺、方法、产品或装置并不一定仅仅限于那些元件,而是可以包括其他的没有明显列出或者隐含在这些工艺、方法、产品或装置中的元件。而且,除非明确表示相反意见,“或”指的是包含性的“或”而非排除性的“或”。例如,条件A或B可通过下述任何一个满足:A为真(或存在)且B为假(或不存在),A为假(或不存在)且B为真(或存在)以及A和B两者都为真(或存在)。
而且,除非明确表示相反意见,“至少一个”应当被解读为“一个或多个”。例如,包含一系列元件中的一个或多个的工艺、方法、产品、或装置,且如果该元件中的一个或多个包含一个子目录的子元件,那么该子元件也和该元件被认为是同样的方式。例如,A和B的至少一个可以通过下述任何一个满足:A为真(或存在)且B为假(或不存在),A为假(或不存在)且A为真(或存在)以及A和B两者都为真(或存在)。
Claims (14)
1.一种在过渡金属阻障层或过渡金属化合物阻障层上沉积填隙铜层用于集成电路金属化以便在其间产生基本上不含氧的界面的方法,包括:
(a)在基板的表面形成该阻障层;
(b)在该阻障层上形成包括钌的可除去的钝化表面;
(c)从该阻障层上除去该可除去的钝化表面;以及
(d)在该阻障层上沉积该填隙铜层。
2.根据权利要求1所述的方法,进一步包含至少一项:
1)、存储在该阻障层上具有该钝化表面的基板一定量的时间以及
2)、传送在该阻障层上具有该钝化表面的该基板。
3.根据权利要求1所述的方法,其中该钝化表面是大体上无氧的。
4.根据权利要求1所述的方法,进一步包含至少一项:
1)、在含氧环境中存储在该阻障层上具有该钝化表面的基板一定量的时间以及
2)、在含氧环境中传送在该阻障层上具有该钝化表面的该基板。
5.根据权利要求1所述的方法,进一步包含至少一项:
1)、在大体上不含氧的环境中存储在该阻障层上具有该钝化表面的基板一定量的时间以及
2)、在大体上不含氧环境中传送在该阻障层上具有该钝化表面的该基板。
6.根据权利要求1所述的方法,其中除去该钝化表面作为在该阻障层上沉积该填隙铜层的一部分发生。
7.根据权利要求1所述的方法,其中形成该可除去的钝化表面包括在含氢等离子体中处理该阻障层表面以清洁该阻障层表面的氧化物。
8.根据权利要求1所述的方法,其中形成该可除去的钝化表面是通过原子层沉积完成的。
9.根据权利要求1所述的方法,其中该阻障层包含钽或氮化钽。
10.根据权利要求1所述的方法,其中形成该可除去的钝化表面是通过钌的原子层沉积完成的。
11.根据权利要求1所述的方法,其中该钝化表面具有在含水无电铜沉积溶液中的生存能力。
12.根据权利要求1所述的方法,其中除去该钝化表面是使用等离子体刻蚀工艺完成的。
13.根据权利要求1所述的方法,其中除去该钝化表面是使用液体化学刻蚀工艺完成的。
14.根据权利要求1所述的方法,其中除去该钝化表面是使用化学镀溶液完成的。
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KR (3) | KR101078627B1 (zh) |
CN (3) | CN102061469B (zh) |
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US7592259B2 (en) | 2006-12-18 | 2009-09-22 | Lam Research Corporation | Methods and systems for barrier layer surface passivation |
JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
US8026605B2 (en) * | 2006-12-14 | 2011-09-27 | Lam Research Corporation | Interconnect structure and method of manufacturing a damascene structure |
US7749893B2 (en) | 2006-12-18 | 2010-07-06 | Lam Research Corporation | Methods and systems for low interfacial oxide contact between barrier and copper metallization |
US8058164B2 (en) * | 2007-06-04 | 2011-11-15 | Lam Research Corporation | Methods of fabricating electronic devices using direct copper plating |
JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
KR102064391B1 (ko) * | 2012-08-31 | 2020-01-10 | 삼성디스플레이 주식회사 | 기판 처리 장치 |
US9054163B2 (en) * | 2013-11-06 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for via plating with seed layer |
TWI755607B (zh) | 2018-06-22 | 2022-02-21 | 美商應用材料股份有限公司 | 金屬薄膜之催化沉積 |
CN111485224B (zh) * | 2019-01-29 | 2024-08-23 | 北京石墨烯研究院 | 化学气相沉积装置 |
JP6953480B2 (ja) * | 2019-07-31 | 2021-10-27 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
JP7505376B2 (ja) * | 2020-11-09 | 2024-06-25 | 東京エレクトロン株式会社 | ルテニウム膜を成膜する方法及び装置 |
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WO2008076677A1 (en) | 2008-06-26 |
KR20110028402A (ko) | 2011-03-17 |
CN102061469A (zh) | 2011-05-18 |
US7592259B2 (en) | 2009-09-22 |
TW200834737A (en) | 2008-08-16 |
US8133812B2 (en) | 2012-03-13 |
KR101134329B1 (ko) | 2012-04-09 |
KR20090092332A (ko) | 2009-08-31 |
KR20120005061A (ko) | 2012-01-13 |
TWI489552B (zh) | 2015-06-21 |
KR101199273B1 (ko) | 2012-11-09 |
KR101078627B1 (ko) | 2011-11-01 |
CN101563758A (zh) | 2009-10-21 |
US20100009535A1 (en) | 2010-01-14 |
CN102061470A (zh) | 2011-05-18 |
US20080146025A1 (en) | 2008-06-19 |
CN102061470B (zh) | 2013-06-19 |
CN102061469B (zh) | 2015-08-19 |
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