JP2015514161A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015514161A5 JP2015514161A5 JP2015503899A JP2015503899A JP2015514161A5 JP 2015514161 A5 JP2015514161 A5 JP 2015514161A5 JP 2015503899 A JP2015503899 A JP 2015503899A JP 2015503899 A JP2015503899 A JP 2015503899A JP 2015514161 A5 JP2015514161 A5 JP 2015514161A5
- Authority
- JP
- Japan
- Prior art keywords
- containing gas
- thin film
- tisin
- supplying
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 18
- 239000007789 gas Substances 0.000 claims 16
- 239000010409 thin film Substances 0.000 claims 12
- 229910008482 TiSiN Inorganic materials 0.000 claims 11
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims 11
- 239000011261 inert gas Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0036505 | 2012-04-09 | ||
| KR1020120036505A KR101189642B1 (ko) | 2012-04-09 | 2012-04-09 | 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법 |
| PCT/EP2013/057308 WO2013153031A1 (en) | 2012-04-09 | 2013-04-08 | METHOD FOR FORMING TiSin THIN LAYER BY USING ATOMIC LAYER DEPOSITION |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015514161A JP2015514161A (ja) | 2015-05-18 |
| JP2015514161A5 true JP2015514161A5 (enExample) | 2016-06-02 |
| JP6200487B2 JP6200487B2 (ja) | 2017-09-20 |
Family
ID=47287726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015503899A Active JP6200487B2 (ja) | 2012-04-09 | 2013-04-08 | 原子層堆積法の使用によるＴｉＳｉＮ薄層の形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9159608B2 (enExample) |
| JP (1) | JP6200487B2 (enExample) |
| KR (1) | KR101189642B1 (enExample) |
| TW (1) | TWI572735B (enExample) |
| WO (1) | WO2013153031A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015193878A (ja) * | 2014-03-31 | 2015-11-05 | 東京エレクトロン株式会社 | ＴｉＳｉＮ膜の成膜方法および成膜装置 |
| US9881865B1 (en) | 2016-07-27 | 2018-01-30 | Samsung Electronics Co., Ltd. | Semiconductor devices including electrically isolated patterns and method of fabricating the same |
| US10151029B2 (en) * | 2016-08-08 | 2018-12-11 | Tokyo Electron Limited | Silicon nitride film forming method and silicon nitride film forming apparatus |
| JP6832785B2 (ja) * | 2016-08-08 | 2021-02-24 | 東京エレクトロン株式会社 | シリコン窒化膜の成膜方法および成膜装置 |
| KR102490696B1 (ko) | 2016-11-07 | 2023-01-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR20180107806A (ko) * | 2017-03-22 | 2018-10-04 | 삼성전자주식회사 | 막 형성 방법, 및 이를 이용한 가변 저항 메모리 소자의 제조방법 |
| KR102369676B1 (ko) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
| US11942365B2 (en) | 2017-06-02 | 2024-03-26 | Eugenus, Inc. | Multi-region diffusion barrier containing titanium, silicon and nitrogen |
| US11401607B2 (en) | 2017-06-02 | 2022-08-02 | Eugenus, Inc. | TiSiN coating method |
| US10665685B2 (en) * | 2017-11-30 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication method thereof |
| US11289487B2 (en) | 2018-02-23 | 2022-03-29 | Micron Technology, Inc. | Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods |
| JP6789257B2 (ja) * | 2018-02-28 | 2020-11-25 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| KR102495082B1 (ko) | 2018-06-12 | 2023-02-01 | 삼성전자주식회사 | 반도체 장치 |
| JP7109310B2 (ja) | 2018-08-23 | 2022-07-29 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP2021031686A (ja) * | 2019-08-15 | 2021-03-01 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP7273168B2 (ja) | 2019-09-18 | 2023-05-12 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム及び基板処理装置 |
| US12444648B2 (en) | 2019-10-08 | 2025-10-14 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| US11587784B2 (en) | 2019-10-08 | 2023-02-21 | Eugenus, Inc. | Smooth titanium nitride layers and methods of forming the same |
| US12431388B2 (en) | 2019-10-08 | 2025-09-30 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| US11832537B2 (en) | 2019-10-08 | 2023-11-28 | Eugenus, Inc. | Titanium silicon nitride barrier layer |
| US11361992B2 (en) | 2019-10-08 | 2022-06-14 | Eugenus, Inc. | Conformal titanium nitride-based thin films and methods of forming same |
| CN114141605A (zh) * | 2020-09-04 | 2022-03-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| WO2022217241A1 (en) * | 2021-04-07 | 2022-10-13 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| TW202334482A (zh) * | 2021-12-03 | 2023-09-01 | 美商應用材料股份有限公司 | 用以形成金屬氮化矽膜的nh自由基熱氮化 |
| KR20230097466A (ko) * | 2021-12-24 | 2023-07-03 | 주식회사 원익아이피에스 | 박막 형성 방법 |
| TWI892024B (zh) * | 2022-06-30 | 2025-08-01 | 南亞科技股份有限公司 | 半導體元件的製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101024449B1 (ko) | 1999-12-09 | 2011-03-23 | 도쿄엘렉트론가부시키가이샤 | 티탄실리콘나이트라이드막의 성막방법 및 반도체장치의 제조방법 |
| AU2001255358A1 (en) * | 2000-04-13 | 2001-10-30 | Gelest, Inc. | Methods for chemical vapor deposition of titanium-silicon-nitrogen films |
| US7482283B2 (en) * | 2000-12-12 | 2009-01-27 | Tokyo Electron Limited | Thin film forming method and thin film forming device |
| US6596643B2 (en) * | 2001-05-07 | 2003-07-22 | Applied Materials, Inc. | CVD TiSiN barrier for copper integration |
| US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| JP4621241B2 (ja) * | 2002-03-18 | 2011-01-26 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| JP2003332426A (ja) * | 2002-05-17 | 2003-11-21 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| JP2005011940A (ja) * | 2003-06-18 | 2005-01-13 | Tokyo Electron Ltd | 基板処理方法、半導体装置の製造方法および半導体装置 |
| US7235482B2 (en) * | 2003-09-08 | 2007-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology |
| US20060182885A1 (en) * | 2005-02-14 | 2006-08-17 | Xinjian Lei | Preparation of metal silicon nitride films via cyclic deposition |
| KR100956210B1 (ko) * | 2007-06-19 | 2010-05-04 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 금속 실리콘 질화물 박막의 플라즈마 강화 사이클릭증착방법 |
| US7833906B2 (en) * | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
-
2012
- 2012-04-09 KR KR1020120036505A patent/KR101189642B1/ko active Active
-
2013
- 2013-04-08 JP JP2015503899A patent/JP6200487B2/ja active Active
- 2013-04-08 TW TW102112318A patent/TWI572735B/zh active
- 2013-04-08 WO PCT/EP2013/057308 patent/WO2013153031A1/en not_active Ceased
- 2013-04-08 US US14/391,294 patent/US9159608B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015514161A5 (enExample) | ||
| TWI737693B (zh) | 金屬硼化物的沉積 | |
| JP2018516465A5 (enExample) | ||
| JP2018095961A5 (enExample) | ||
| JP2015122486A5 (ja) | アンダーコートを形成する方法および反応チャンバ | |
| WO2019055393A8 (en) | Compositions and methods for depositing silicon-containing films | |
| JP2018050038A5 (enExample) | ||
| JP2015159282A5 (ja) | 半導体基板を処理する方法 | |
| SG10201800863VA (en) | Selective deposition with atomic layer etch reset | |
| TW200741869A (en) | Method of seasoning film-forming apparatus | |
| SG10201800531WA (en) | Multi-layer plasma resistant coating by atomic layer deposition | |
| TW201350607A (zh) | 利用原子層沉積形成ＴｉＳｉＮ薄層之方法 | |
| JP2014236220A (ja) | バッチ反応器中での環状窒化アルミニウム蒸着 | |
| JP2009144242A5 (ja) | タングステン膜の製造方法および装置 | |
| JP2016046532A5 (enExample) | ||
| JP2014236220A5 (enExample) | ||
| TWI638903B (zh) | 氮化膜的製造方法 | |
| WO2010065874A3 (en) | High concentration nitrogen-containing germanium telluride based memory devices and processes of making | |
| MX2017005895A (es) | Metodo para recubrir un objeto y recubrimiento producido mediante el mismo. | |
| JP2011066060A5 (enExample) | ||
| JP2017228580A5 (enExample) | ||
| MY188421A (en) | Polymer coatings and methods for depositing polymer coatings | |
| WO2017062355A3 (en) | Methods for depositing dielectric barrier layers and aluminum containing etch stop layers | |
| WO2015069894A3 (en) | Method for depositing metal layers on germanium-containing films using metal chloride precursors | |
| FI3114248T3 (fi) | Germaniumin tai germaniumoksidin atomikerroskasvatus |