JP2017031040A - シリカ膜形成用組成物、シリカ膜の製造方法およびシリカ膜 - Google Patents
シリカ膜形成用組成物、シリカ膜の製造方法およびシリカ膜 Download PDFInfo
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- JP2017031040A JP2017031040A JP2016036077A JP2016036077A JP2017031040A JP 2017031040 A JP2017031040 A JP 2017031040A JP 2016036077 A JP2016036077 A JP 2016036077A JP 2016036077 A JP2016036077 A JP 2016036077A JP 2017031040 A JP2017031040 A JP 2017031040A
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- silica film
- composition
- forming
- mixed solvent
- silicon
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 148
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 74
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229920005573 silicon-containing polymer Polymers 0.000 claims abstract description 24
- 239000002904 solvent Substances 0.000 claims abstract description 22
- 239000012046 mixed solvent Substances 0.000 claims description 37
- CHLICZRVGGXEOD-UHFFFAOYSA-N 1-Methoxy-4-methylbenzene Chemical compound COC1=CC=C(C)C=C1 CHLICZRVGGXEOD-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
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- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 12
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 12
- 229920001709 polysilazane Polymers 0.000 claims description 11
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 claims description 10
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- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 6
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- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 6
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 claims description 6
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- 229940072049 amyl acetate Drugs 0.000 claims description 3
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- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 3
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
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- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
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- 238000005259 measurement Methods 0.000 description 4
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- 239000004809 Teflon Substances 0.000 description 3
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- 125000003545 alkoxy group Chemical group 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
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- DSNHSQKRULAAEI-UHFFFAOYSA-N 1,4-Diethylbenzene Chemical compound CCC1=CC=C(CC)C=C1 DSNHSQKRULAAEI-UHFFFAOYSA-N 0.000 description 2
- 125000000739 C2-C30 alkenyl group Chemical group 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 125000003172 aldehyde group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000004404 heteroalkyl group Chemical group 0.000 description 2
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- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
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- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 1
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- UROWAZWGAADJLH-UHFFFAOYSA-N [nitro(phenyl)methyl] benzenesulfonate Chemical compound C=1C=CC=CC=1C([N+](=O)[O-])OS(=O)(=O)C1=CC=CC=C1 UROWAZWGAADJLH-UHFFFAOYSA-N 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
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- 125000000717 hydrazino group Chemical group [H]N([*])N([H])[H] 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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Abstract
【解決手段】前記組成物は、ケイ素含有重合体と、少なくとも2種の溶媒を含む混合溶媒とを含み、前記混合溶媒は、25℃で5mN/m〜35mN/mの表面張力を有する。
【選択図】なし
Description
□測定機器:Force Tensiometer−K11
□測定温度:25℃
□測定規格:ASTM D1331
なお、組成物中の溶媒とは、固形分を溶質とした場合に、溶質を溶解した成分を指す。このため、単にケイ素含有重合体を溶解するための溶媒のみならず、その他の成分を溶解するのに要した溶媒も含まれる。
合成例1
撹拌装置および温度制御装置付きの2L反応器の内部を乾燥窒素に置換した。そして、乾燥ピリジン1,500gに純水2.0gを注入して十分に混合した後に、これを反応器に入れて5℃に保温した。次に、これにジクロロシラン100gを1時間かけて徐々に注入した後、撹拌しながらアンモニア70gを3時間かけて徐々に注入した。次に、乾燥窒素を30分間注入し、反応器内に残存するアンモニアを除去した。
キシレン20gおよびデカリン20gを混合して混合溶媒を準備した。
前記実施例1で使用された混合溶媒の代わりにジエチルベンゼン20gとパラメチルアニソール20gとを混合した混合溶媒(25℃での表面張力:31.57mN/m)を用いたことを除いては、実施例1と同様にして、シリカ膜形成用組成物を製造した。
前記実施例1で使用された混合溶媒の代わりにテトラメチルベンゼン20gとパラメチルアニソール20gとを混合した混合溶媒(25℃での表面張力:30.75mN/m)を用いたことを除いては、実施例1と同様一にして、シリカ膜形成用組成物を製造した。
前記実施例1で使用された混合溶媒の代わりにアニソール20gとエチルヘキシルエーテル20gとを混合した混合溶媒(25℃での表面張力:35.30mN/m)を用いたことを除いては、実施例1と同様にして、シリカ膜形成用組成物を製造した。
前記実施例1で使用された混合溶媒の代わりにキシレン40g(25℃での表面張力:29.02mN/m)を単独で用いたことを除いては、実施例1と同様にして、シリカ膜形成用組成物を製造した。
実施例1〜3、および比較例1〜2によるシリカ膜形成用組成物を、直径8インチのパターン化されたシリコンウエハ上にスピンコート法によりコーティングした後、150℃で130秒間乾燥して、薄膜を形成した。
実施例1〜3、および比較例1〜2によるシリカ膜形成用組成物を、直径8インチのパターン化されたシリコンウエハ上にスピンオンコーティング方式によりコーティングした後、150℃で130秒間ベークして、薄膜を形成した。
Claims (10)
- ケイ素含有重合体と、
少なくとも2種の溶媒を含む混合溶媒と、を含み、
前記混合溶媒は、25℃で5mN/m〜35mN/mの表面張力を有する、シリカ膜形成用組成物。 - 前記混合溶媒は、25℃で15mN/m〜35mN/mの表面張力を有する、請求項1に記載のシリカ膜形成用組成物。
- 前記混合溶媒は、ベンゼン、トルエン、キシレン、エチルベンゼン、ジエチルベンゼン、トリメチルベンゼン、トリエチルベンゼン、シクロヘキサン、シクロヘキセン、デカヒドロナフタレン、ジペンテン、ペンタン、ヘキサン、ヘプタン、オクタン、ノナン、デカン、エチルシクロヘキサン、メチルシクロヘキサン、シクロヘキサン、シクロヘキセン、p−メンタン、ジプロピルエーテル、ジブチルエーテル、アニソール、酢酸ブチル、酢酸アミル、メチルイソブチルケトン、パラメチルアニソール、およびテトラメチルベンゼンからなる群より選択された少なくとも2種を含む、請求項1または2に記載のシリカ膜形成用組成物。
- 前記ケイ素含有重合体は、ポリシラザン、ポリシロキサザン、またはこれらの組み合わせを含む、請求項1〜3のいずれか1項に記載のシリカ膜形成用組成物。
- 前記ケイ素含有重合体は、重量平均分子量が1,000〜160,000g/molである、請求項1〜4のいずれか1項に記載のシリカ膜形成用組成物。
- 前記ケイ素含有重合体は、前記シリカ膜形成用組成物の総量に対して0.1〜30重量%含まれている、請求項1〜5のいずれか1項に記載のシリカ膜形成用組成物。
- 基板上に、請求項1〜6のいずれか1項に記載のシリカ膜形成用組成物を塗布する段階と、
前記シリカ膜形成用組成物が塗布された基板を乾燥する段階と、
150℃以上で硬化する段階と、を含む、シリカ膜の製造方法。 - 前記シリカ膜形成用組成物を塗布する段階は、スピンコート法により行われる、請求項7に記載のシリカ膜の製造方法。
- 請求項7または8に記載の方法で形成されたシリカ膜。
- 請求項9に記載のシリカ膜を含む電子素子。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10804095B2 (en) | 2017-12-14 | 2020-10-13 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
JP2021034727A (ja) * | 2019-08-21 | 2021-03-01 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | シリカ膜形成用組成物およびシリカ膜 |
WO2021124802A1 (ja) * | 2019-12-17 | 2021-06-24 | コニカミノルタ株式会社 | 電子デバイス封止層形成用のインク組成物、電子デバイス封止層形成方法及び電子デバイス封止層 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102103805B1 (ko) * | 2017-06-05 | 2020-05-29 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
US11724963B2 (en) | 2019-05-01 | 2023-08-15 | Corning Incorporated | Pharmaceutical packages with coatings comprising polysilazane |
KR20210128235A (ko) * | 2020-04-16 | 2021-10-26 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 그로부터 형성된 실리카 막, 및 상기 실리카 막을 포함하는 전자 소자 |
KR102451804B1 (ko) * | 2020-11-30 | 2022-10-12 | 한국생산기술연구원 | 폴리실록산을 포함하는 폴리실라잔 공중합체 및 이를 포함하는 코팅용 조성물 |
KR20230020810A (ko) * | 2021-08-04 | 2023-02-13 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막, 및 전자소자 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649540A (en) * | 1979-06-21 | 1981-05-06 | Fujitsu Ltd | Semiconductor device |
JP2011515835A (ja) * | 2008-03-06 | 2011-05-19 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 有機半導体配合物 |
WO2012067230A1 (ja) * | 2010-11-19 | 2012-05-24 | コニカミノルタホールディングス株式会社 | ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス |
JP2013001721A (ja) * | 2011-06-13 | 2013-01-07 | Adeka Corp | 無機ポリシラザン、これを含有してなるシリカ膜形成用塗布液及びシリカ膜の形成方法 |
JP2014213317A (ja) * | 2013-04-30 | 2014-11-17 | チェイル インダストリーズインコーポレイテッド | 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜 |
US20150093545A1 (en) * | 2013-10-01 | 2015-04-02 | Samsung Sdi Co., Ltd. | Composition for a silica based layer, silica based layer, and method of manufacturing a silica based layer |
WO2015083660A1 (ja) * | 2013-12-06 | 2015-06-11 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
WO2016047362A1 (ja) * | 2014-09-26 | 2016-03-31 | 富士フイルム株式会社 | 塗布材料、パターン形成方法および電子デバイスのその製造方法 |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3170962A (en) * | 1955-01-14 | 1965-02-23 | Dow Corning | Organosilicon-epoxy resin compositions |
US3453304A (en) * | 1966-12-19 | 1969-07-01 | Gen Electric | Process for preparing siloxane diolates |
US3758624A (en) | 1971-05-26 | 1973-09-11 | Ethyl Corp | Gasoline compositions |
US5151390A (en) | 1986-06-13 | 1992-09-29 | Toa Nenryo Kogyo Kabushiki Kaisha | Silicon nitride-based fibers and composite material reinforced with fibers |
US4975512A (en) * | 1987-08-13 | 1990-12-04 | Petroleum Energy Center | Reformed polysilazane and method of producing same |
US5354506A (en) * | 1989-09-28 | 1994-10-11 | Albemarle Corporation | Preceramic compositions and ceramic products |
US4992108A (en) | 1990-01-18 | 1991-02-12 | Ward Irl E | Photoresist stripping compositions |
US5688864A (en) * | 1990-04-03 | 1997-11-18 | Ppg Industries, Inc. | Autophobic water repellent surface treatment |
JPH05148720A (ja) | 1991-11-22 | 1993-06-15 | Honda Motor Co Ltd | ポリシラザン繊維、その製造方法及びセラミツク繊維 |
JPH05243223A (ja) | 1992-02-28 | 1993-09-21 | Fujitsu Ltd | 集積回路装置の製造方法 |
EP0623571A4 (en) | 1992-11-26 | 1997-07-02 | Tonen Corp | PROCESS FOR MANUFACTURING CERAMIC PRODUCTS. |
US5747623A (en) * | 1994-10-14 | 1998-05-05 | Tonen Corporation | Method and composition for forming ceramics and article coated with the ceramics |
JP3516815B2 (ja) | 1996-08-06 | 2004-04-05 | 触媒化成工業株式会社 | シリカ系被膜形成用塗布液および被膜付基材 |
JP3912697B2 (ja) | 1996-08-14 | 2007-05-09 | 東京応化工業株式会社 | 層間絶縁膜形成用塗布液及びそれを用いた絶縁膜の形成方法 |
JP4101322B2 (ja) | 1996-12-27 | 2008-06-18 | Azエレクトロニックマテリアルズ株式会社 | 低誘電率セラミックス材料及びその製造方法 |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
JPH10321719A (ja) | 1997-05-19 | 1998-12-04 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP3760028B2 (ja) | 1997-07-03 | 2006-03-29 | 関西ペイント株式会社 | 複層塗膜形成法 |
CN1115572C (zh) | 1998-02-18 | 2003-07-23 | 精工爱普生株式会社 | 分布反射型多层膜镜的制造方法 |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
KR20000053521A (ko) | 1999-01-20 | 2000-08-25 | 고사이 아끼오 | 금속 부식 방지제 및 세척액 |
US6413202B1 (en) | 1999-01-21 | 2002-07-02 | Alliedsignal, Inc. | Solvent systems for polymeric dielectric materials |
CN1310930A (zh) * | 1999-03-29 | 2001-08-29 | 精工爱普生株式会社 | 组合物及膜的制造方法以及功能元件及其制造方法 |
US6359096B1 (en) * | 1999-10-25 | 2002-03-19 | Dow Corning Corporation | Silicone resin compositions having good solution solubility and stability |
DE60009046T2 (de) * | 1999-12-16 | 2005-01-20 | Asahi Glass Co., Ltd. | Polysilanzan-zusammensetzung, gegossener, beschichteter gegenstand und vernetzter gegenstand |
JP5020425B2 (ja) | 2000-04-25 | 2012-09-05 | Azエレクトロニックマテリアルズ株式会社 | 微細溝をシリカ質材料で埋封する方法 |
KR100362834B1 (ko) | 2000-05-02 | 2002-11-29 | 삼성전자 주식회사 | 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치 |
AU2001266998A1 (en) | 2000-06-23 | 2002-01-08 | Honeywell International, Inc. | Method to restore hydrophobicity in dielectric films and materials |
JP3548512B2 (ja) | 2000-09-28 | 2004-07-28 | 日本電気株式会社 | 半導体装置の製造方法 |
US6451955B1 (en) * | 2000-09-28 | 2002-09-17 | Sumitomo Bakelite Company Limited | Method of making a polyimide in a low-boiling solvent |
US7270886B2 (en) | 2000-10-12 | 2007-09-18 | Samsung Electronics Co., Ltd. | Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same |
KR100364026B1 (ko) | 2001-02-22 | 2002-12-11 | 삼성전자 주식회사 | 층간 절연막 형성방법 |
WO2002078842A1 (en) | 2001-03-30 | 2002-10-10 | Council Of Scientific And Industrial Research | A novel catalytic formulation and its preparation |
JP3479648B2 (ja) | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
JP3631236B2 (ja) | 2002-07-12 | 2005-03-23 | 東京応化工業株式会社 | シリカ系有機被膜の製造方法 |
RU2332437C2 (ru) | 2002-11-01 | 2008-08-27 | Клариант Интернэшнл Лтд | Раствор для нанесения полисилазансодержащего покрытия и его применение |
KR100503527B1 (ko) | 2003-02-12 | 2005-07-26 | 삼성전자주식회사 | 퍼하이드로 폴리실라잔을 포함하는 반도체 소자 제조용조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR100464859B1 (ko) | 2003-02-26 | 2005-01-06 | 삼성전자주식회사 | 스핀온글래스 조성물을 이용한 캐패시터 형성 방법 |
JP4574124B2 (ja) | 2003-05-01 | 2010-11-04 | Azエレクトロニックマテリアルズ株式会社 | コーティング組成物、多孔質シリカ質膜、多孔質シリカ質膜の製造方法及び半導体装置 |
US7192891B2 (en) | 2003-08-01 | 2007-03-20 | Samsung Electronics, Co., Ltd. | Method for forming a silicon oxide layer using spin-on glass |
KR100611115B1 (ko) | 2003-11-11 | 2006-08-09 | 삼성전자주식회사 | 스핀온글래스 조성물 및 이를 이용한 실리콘 산화막형성방법 |
JP5128044B2 (ja) | 2003-12-10 | 2013-01-23 | 東京応化工業株式会社 | シリコン基板又は金属配線パターンが設けられたシリコン基板被覆用シリカ系被膜形成用材料の製造方法 |
TWI276929B (en) | 2003-12-16 | 2007-03-21 | Showa Denko Kk | Photosensitive composition remover |
JP2005260040A (ja) | 2004-02-12 | 2005-09-22 | Sony Corp | ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法 |
DE102004011212A1 (de) | 2004-03-04 | 2005-09-29 | Clariant International Limited | Perhydropolysilazane enthaltende Beschichtungen für Metall- und Polymeroberflächen |
KR100619660B1 (ko) | 2004-04-27 | 2006-09-06 | 캐논 가부시끼가이샤 | 현상 방법 및 이를 이용한 현상 장치 |
KR100599727B1 (ko) | 2004-04-29 | 2006-07-12 | 삼성에스디아이 주식회사 | 유기 el 발광셀의 커패시터 및 그 제조 방법 |
JP2005347636A (ja) | 2004-06-04 | 2005-12-15 | Az Electronic Materials Kk | トレンチ・アイソレーション構造の形成方法 |
JP4578993B2 (ja) * | 2005-02-02 | 2010-11-10 | Azエレクトロニックマテリアルズ株式会社 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
JP4672400B2 (ja) | 2005-03-09 | 2011-04-20 | 株式会社東芝 | 過水素化ポリシラザン溶液およびそれを用いた半導体装置の製造方法 |
GT200600381A (es) | 2005-08-25 | 2007-03-28 | Compuestos organicos | |
JP4349390B2 (ja) | 2006-07-31 | 2009-10-21 | 日立化成工業株式会社 | シリコーン系材料組成物、シリカ系被膜及び半導体装置 |
JP4965953B2 (ja) | 2006-09-29 | 2012-07-04 | 株式会社東芝 | ポリシラザンまたはポリシラザン溶液の取り扱い方法、ポリシラザン溶液、半導体装置の製造方法 |
JP5250813B2 (ja) | 2007-03-25 | 2013-07-31 | 国立大学法人徳島大学 | 撥水処理方法および撥水性シリカ層を有する基材 |
JP2008305974A (ja) | 2007-06-07 | 2008-12-18 | Elpida Memory Inc | 酸化膜形成用塗布組成物およびそれを用いた半導体装置の製造方法 |
CN101679923B (zh) | 2007-07-05 | 2012-07-25 | 日本曹达株式会社 | 有机薄膜清洗用溶剂 |
BE1017674A3 (fr) * | 2007-07-05 | 2009-03-03 | Fib Services Internat | Composition de traitement de chambre a parois refractaires et son procede de mise en oeuvre. |
JP5405031B2 (ja) * | 2008-03-06 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜の製造に用いる浸漬用溶液およびそれを用いたシリカ質膜の製造法 |
JP2010061722A (ja) | 2008-09-02 | 2010-03-18 | Konica Minolta Opto Inc | 基板の製造方法、前記方法により製造される基板、及び前記基板を用いた磁気記録媒体 |
JP2010059280A (ja) | 2008-09-02 | 2010-03-18 | Toppan Printing Co Ltd | ハードコート塗液、ハードコートフィルムおよびタッチパネル用上部電極板 |
US8858720B2 (en) | 2008-12-09 | 2014-10-14 | Chevron Belgium Nv | Method for cleaning deposits from turbocharger and supercharger compressors |
JP2010171362A (ja) | 2008-12-26 | 2010-08-05 | Fujifilm Corp | 半導体デバイス用洗浄剤及びそれを用いた半導体デバイスの製造方法 |
JP5700615B2 (ja) | 2009-02-02 | 2015-04-15 | 旭化成イーマテリアルズ株式会社 | ポリシラザン系トレンチ埋め込み用組成物 |
JP5535583B2 (ja) | 2009-05-25 | 2014-07-02 | AzエレクトロニックマテリアルズIp株式会社 | トレンチ・アイソレーション構造の形成方法 |
KR101178215B1 (ko) | 2009-07-13 | 2012-08-29 | (주)디엔에프 | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법 |
KR20110012574A (ko) | 2009-07-31 | 2011-02-09 | (주)디엔에프 | 아미노실란을 포함하는 폴리실라잔 조성물 |
KR20110023411A (ko) | 2009-08-31 | 2011-03-08 | 주식회사 동진쎄미켐 | 반도체 소자의 절연막 형성용 조성물 |
KR101288574B1 (ko) | 2009-12-02 | 2013-07-22 | 제일모직주식회사 | 갭필용 충전제 및 상기 충전제를 사용한 반도체 캐패시터의 제조 방법 |
KR101178214B1 (ko) | 2009-12-23 | 2012-08-29 | (주)디엔에프 | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법 |
JP5172867B2 (ja) | 2010-01-07 | 2013-03-27 | AzエレクトロニックマテリアルズIp株式会社 | ポリシラザンを含むコーティング組成物 |
JP5691175B2 (ja) | 2010-01-13 | 2015-04-01 | コニカミノルタ株式会社 | ガスバリアフィルムの製造方法、ガスバリアフィルム及び有機光電変換素子 |
KR101142369B1 (ko) | 2010-01-18 | 2012-05-18 | 강원대학교산학협력단 | 무기 실리카 바인더로 고정된 광촉매층을 갖는 플라스틱 성형체 및 그의 제조방법 |
US8193027B2 (en) | 2010-02-23 | 2012-06-05 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
WO2011133408A2 (en) | 2010-04-23 | 2011-10-27 | Henkel Corporation | Silicone-acrylic copolymer |
US8382270B2 (en) | 2010-06-14 | 2013-02-26 | Xerox Corporation | Contact leveling using low surface tension aqueous solutions |
US20130123391A1 (en) | 2010-08-25 | 2013-05-16 | Dow Global Technologies Llc | Copolymers |
JP2012094739A (ja) | 2010-10-28 | 2012-05-17 | Sharp Corp | 製膜方法および半導体装置の製造方法 |
CN102569060B (zh) | 2010-12-22 | 2015-03-11 | 第一毛织株式会社 | 形成硅氧层的组合物及其生产方法、利用其的硅氧层及生产硅氧层的方法 |
KR101443758B1 (ko) | 2010-12-22 | 2014-09-26 | 제일모직주식회사 | 실리카층 형성용 조성물, 그 제조방법, 이를 이용한 실리카층 및 실리카층 제조방법 |
KR101387740B1 (ko) | 2011-01-07 | 2014-04-21 | 제일모직주식회사 | 실리카계 절연층 형성용 조성물, 실리카계 절연층 형성용 조성물의 제조방법, 실리카계 절연층 및 실리카계 절연층의 제조방법 |
JP5781323B2 (ja) | 2011-02-18 | 2015-09-16 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 絶縁膜の形成方法 |
KR101432606B1 (ko) | 2011-07-15 | 2014-08-21 | 제일모직주식회사 | 갭필용 충전제, 이의 제조 방법 및 이를 사용한 반도체 캐패시터의 제조 방법 |
EP2700500A4 (en) | 2011-09-08 | 2015-02-25 | Lintec Corp | MODIFIED POLYSILAZANE FILM AND PROCESS FOR PRODUCING GAS BARRIER FILM |
US8252101B1 (en) | 2011-11-11 | 2012-08-28 | Glemba Jr Roman A | Method and composition for polishing surfaces |
DE102011087931A1 (de) | 2011-12-07 | 2013-06-13 | Wacker Chemie Ag | Herstellung hochmolekularer Siliconharze |
JP5970197B2 (ja) | 2012-02-08 | 2016-08-17 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | 無機ポリシラザン樹脂 |
FR2988520B1 (fr) | 2012-03-23 | 2014-03-14 | Arkema France | Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique |
CA2867296C (en) | 2012-03-26 | 2016-09-27 | The Procter & Gamble Company | Cleaning compositions comprising ph-switchable amine surfactants |
KR101332306B1 (ko) | 2012-03-30 | 2013-11-22 | 한국기계연구원 | 프리스탠딩 나노 박막 제조방법 |
KR20140011506A (ko) | 2012-06-20 | 2014-01-29 | 제일모직주식회사 | 가스 배리어 필름, 그 제조방법 및 이를 포함하는 디스플레이 부재 |
US20140057003A1 (en) | 2012-08-24 | 2014-02-27 | Raymond C. Johnson | Augmenting Cleaning Chemicals |
US20140099510A1 (en) | 2012-10-04 | 2014-04-10 | Hendrich Chiong | Methods of manufacture of bis(phthalimide)s and polyetherimides, and bis(phthalimide)s, and polyetherimides formed therefrom |
US9754728B2 (en) * | 2012-10-09 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Material for electrode of power storage device, power storage device, and electrical appliance |
JP6177055B2 (ja) * | 2012-10-29 | 2017-08-09 | キヤノン株式会社 | 塗工装置、塗工方法、定着部材の製造装置、定着部材の製造方法 |
KR101622001B1 (ko) | 2012-12-27 | 2016-05-17 | 제일모직주식회사 | 하드코팅 필름 및 그 제조방법 |
KR101556672B1 (ko) | 2012-12-27 | 2015-10-01 | 제일모직 주식회사 | 실리카계 절연층 형성용 조성물, 실리카계 절연층 형성용 조성물의 제조방법, 실리카계 절연층 및 실리카계 절연층의 제조방법 |
US9890255B2 (en) | 2012-12-31 | 2018-02-13 | Cheil Industries, Inc. | Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming |
CN103910885A (zh) | 2012-12-31 | 2014-07-09 | 第一毛织株式会社 | 制备间隙填充剂的方法、用其制备的间隙填充剂和使用间隙填充剂制造半导体电容器的方法 |
KR101583225B1 (ko) | 2012-12-31 | 2016-01-07 | 제일모직 주식회사 | 실리카계 절연층 형성용 조성물, 실리카계 절연층 및 실리카계 절연층의 제조방법 |
TWI575326B (zh) | 2013-04-09 | 2017-03-21 | Jsr Corp | A method for forming a resist film and a pattern forming method |
KR101692757B1 (ko) | 2013-04-18 | 2017-01-04 | 제일모직 주식회사 | 절연막용 린스액 및 절연막의 린스 방법 |
KR101653336B1 (ko) | 2013-05-28 | 2016-09-01 | 제일모직주식회사 | 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법 |
KR20150019949A (ko) | 2013-08-16 | 2015-02-25 | 제일모직주식회사 | 절연막의 제조방법 |
JP6183097B2 (ja) | 2013-09-20 | 2017-08-23 | 株式会社村田製作所 | 表面平滑化液晶ポリマーフィルムおよびガスバリアフィルム |
KR20150039084A (ko) | 2013-10-01 | 2015-04-09 | 제일모직주식회사 | 실리카계 막 형성용 조성물, 실리카계 막 및 실리카계 막의 제조방법 |
JP6267533B2 (ja) | 2014-02-14 | 2018-01-24 | 信越化学工業株式会社 | パターン形成方法 |
-
2015
- 2015-07-31 KR KR1020150109028A patent/KR20170014946A/ko active Application Filing
-
2016
- 2016-02-26 JP JP2016036077A patent/JP6687418B2/ja active Active
- 2016-03-04 US US15/061,670 patent/US10106687B2/en active Active
- 2016-03-21 TW TW105108604A patent/TWI621666B/zh active
- 2016-03-21 CN CN201610160367.9A patent/CN106409652B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649540A (en) * | 1979-06-21 | 1981-05-06 | Fujitsu Ltd | Semiconductor device |
JP2011515835A (ja) * | 2008-03-06 | 2011-05-19 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 有機半導体配合物 |
WO2012067230A1 (ja) * | 2010-11-19 | 2012-05-24 | コニカミノルタホールディングス株式会社 | ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス |
JP2013001721A (ja) * | 2011-06-13 | 2013-01-07 | Adeka Corp | 無機ポリシラザン、これを含有してなるシリカ膜形成用塗布液及びシリカ膜の形成方法 |
JP2014213317A (ja) * | 2013-04-30 | 2014-11-17 | チェイル インダストリーズインコーポレイテッド | 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜 |
US20150093545A1 (en) * | 2013-10-01 | 2015-04-02 | Samsung Sdi Co., Ltd. | Composition for a silica based layer, silica based layer, and method of manufacturing a silica based layer |
WO2015083660A1 (ja) * | 2013-12-06 | 2015-06-11 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
WO2016047362A1 (ja) * | 2014-09-26 | 2016-03-31 | 富士フイルム株式会社 | 塗布材料、パターン形成方法および電子デバイスのその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10804095B2 (en) | 2017-12-14 | 2020-10-13 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
JP2021034727A (ja) * | 2019-08-21 | 2021-03-01 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | シリカ膜形成用組成物およびシリカ膜 |
JP7007434B2 (ja) | 2019-08-21 | 2022-01-24 | 三星エスディアイ株式会社 | シリカ膜形成用組成物およびシリカ膜 |
WO2021124802A1 (ja) * | 2019-12-17 | 2021-06-24 | コニカミノルタ株式会社 | 電子デバイス封止層形成用のインク組成物、電子デバイス封止層形成方法及び電子デバイス封止層 |
KR20220066130A (ko) | 2019-12-17 | 2022-05-23 | 코니카 미놀타 가부시키가이샤 | 전자 디바이스 밀봉층 형성용의 잉크 조성물, 전자 디바이스 밀봉층 형성 방법 및 전자 디바이스 밀봉층 |
JP7439837B2 (ja) | 2019-12-17 | 2024-02-28 | コニカミノルタ株式会社 | 電子デバイス封止層形成用のインク組成物及び電子デバイス封止層形成方法 |
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KR20170014946A (ko) | 2017-02-08 |
CN106409652A (zh) | 2017-02-15 |
US20170029624A1 (en) | 2017-02-02 |
CN106409652B (zh) | 2019-06-18 |
TW201704351A (zh) | 2017-02-01 |
TWI621666B (zh) | 2018-04-21 |
US10106687B2 (en) | 2018-10-23 |
JP6687418B2 (ja) | 2020-04-22 |
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