JPS5649540A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5649540A
JPS5649540A JP7755779A JP7755779A JPS5649540A JP S5649540 A JPS5649540 A JP S5649540A JP 7755779 A JP7755779 A JP 7755779A JP 7755779 A JP7755779 A JP 7755779A JP S5649540 A JPS5649540 A JP S5649540A
Authority
JP
Japan
Prior art keywords
coated
wiring layer
semiconductor device
layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7755779A
Other languages
Japanese (ja)
Other versions
JPS6046826B2 (en
Inventor
Shiro Takeda
Minoru Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7755779A priority Critical patent/JPS6046826B2/en
Priority to US06/161,561 priority patent/US4349609A/en
Priority to EP80302103A priority patent/EP0021818B1/en
Priority to DE8080302103T priority patent/DE3065150D1/en
Publication of JPS5649540A publication Critical patent/JPS5649540A/en
Publication of JPS6046826B2 publication Critical patent/JPS6046826B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)

Abstract

PURPOSE:To obtain a semiconductor device with extremely high heat and moisture resistances by using organopolysiloxane of end bridged type and ladder type as insulative layers between layers when forming multilayer wirings in a semiconductor device. CONSTITUTION:An Si wafer 1 includes a circuit element having exposed parts at predetermined positions and an SiO2 peotective film 2. An Al wiring layer 3 with a predetermined pattern is formed on the film 2 and then a hardened polysiloxane layer 4 is coated thereon. For the layer 4 there is used a solution obtained by solving polysiloxane of monomethylladder type into a mixed solvent consisted of cyclohexane and toluene in the volume ration of about 2:1 while keeping the concentration at about 25wt%. More specifically, this varnish is spin-coated on the wiring layer 3 and hardened by heat treatment for 10min at 300 deg.C in the atmosphere of N2. The varnish is coated thereon again and brought under another heat treatment for 30min at 350 deg.C. Then, contact holes 5 are bored at predetermined positions on the wiring layer 3 and the subsequent wiring layer and siloxane layers are repeatedly coated in a similar manner so as fo form a multilayer wirings structure.
JP7755779A 1979-06-21 1979-06-21 semiconductor equipment Expired JPS6046826B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7755779A JPS6046826B2 (en) 1979-06-21 1979-06-21 semiconductor equipment
US06/161,561 US4349609A (en) 1979-06-21 1980-06-20 Electronic device having multilayer wiring structure
EP80302103A EP0021818B1 (en) 1979-06-21 1980-06-23 Improved electronic device having multilayer wiring structure
DE8080302103T DE3065150D1 (en) 1979-06-21 1980-06-23 Improved electronic device having multilayer wiring structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7755779A JPS6046826B2 (en) 1979-06-21 1979-06-21 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5649540A true JPS5649540A (en) 1981-05-06
JPS6046826B2 JPS6046826B2 (en) 1985-10-18

Family

ID=13637308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7755779A Expired JPS6046826B2 (en) 1979-06-21 1979-06-21 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6046826B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5813632A (en) * 1981-07-17 1983-01-26 Japan Synthetic Rubber Co Ltd Ladder-like lower alkylpolysilsesquioxane capable of forming heat-resistant thin film
JPS58110038A (en) * 1981-12-23 1983-06-30 Nec Corp Pattern formation
JPS60139764A (en) * 1983-12-27 1985-07-24 Fujitsu Ltd Method for curing thermosetting silicone resin
JPS60254132A (en) * 1984-05-31 1985-12-14 Fujitsu Ltd Pattern forming material
JPS62502071A (en) * 1985-03-07 1987-08-13 ヒュ−ズ・エアクラフト・カンパニ− Polysiloxane resists for ion beam and electron beam lithography
JPS62228240A (en) * 1986-03-27 1987-10-07 Nisshin Flour Milling Co Ltd Three-layer noodles and production thereof
JPS6450533A (en) * 1987-08-21 1989-02-27 Showa Denko Kk Wiring board
JPH01128755A (en) * 1987-11-11 1989-05-22 Kunimi Hayashi Preparation of noodle
JPH01305525A (en) * 1988-06-03 1989-12-08 Showa Denko Kk Integrated circuit
JPH02222537A (en) * 1989-02-23 1990-09-05 Mitsubishi Electric Corp Method of transferring pattern on silicone ladder resin and etching liquid to be used therefor
US5604380A (en) * 1993-10-07 1997-02-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a multilayer interconnection structure
JP2007103921A (en) * 2005-09-06 2007-04-19 Canon Inc Semiconductor element
KR100869840B1 (en) 2006-02-07 2008-11-21 토쿄오오카코교 가부시기가이샤 Coloring composition for forming a silica film
JP2017031040A (en) * 2015-07-31 2017-02-09 三星エスディアイ株式会社Samsung SDI Co., Ltd. Silica film forming composition, method for producing silica film and silica film

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0143773B2 (en) * 1981-07-17 1989-09-22 Japan Synthetic Rubber Co Ltd
JPS5813632A (en) * 1981-07-17 1983-01-26 Japan Synthetic Rubber Co Ltd Ladder-like lower alkylpolysilsesquioxane capable of forming heat-resistant thin film
JPS58110038A (en) * 1981-12-23 1983-06-30 Nec Corp Pattern formation
JPH0542810B2 (en) * 1981-12-23 1993-06-29 Nippon Electric Co
JPS60139764A (en) * 1983-12-27 1985-07-24 Fujitsu Ltd Method for curing thermosetting silicone resin
JPH0414782B2 (en) * 1984-05-31 1992-03-13 Fujitsu Ltd
JPS60254132A (en) * 1984-05-31 1985-12-14 Fujitsu Ltd Pattern forming material
JPS62502071A (en) * 1985-03-07 1987-08-13 ヒュ−ズ・エアクラフト・カンパニ− Polysiloxane resists for ion beam and electron beam lithography
JPS62228240A (en) * 1986-03-27 1987-10-07 Nisshin Flour Milling Co Ltd Three-layer noodles and production thereof
JPS6450533A (en) * 1987-08-21 1989-02-27 Showa Denko Kk Wiring board
JPH01128755A (en) * 1987-11-11 1989-05-22 Kunimi Hayashi Preparation of noodle
JPH01305525A (en) * 1988-06-03 1989-12-08 Showa Denko Kk Integrated circuit
JPH02222537A (en) * 1989-02-23 1990-09-05 Mitsubishi Electric Corp Method of transferring pattern on silicone ladder resin and etching liquid to be used therefor
US5087553A (en) * 1989-02-23 1992-02-11 Mitsubishi Denki Kabushiki Kaisha Method for transferring patterns on silicone ladder type resin and etching solution used in such method
US5604380A (en) * 1993-10-07 1997-02-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a multilayer interconnection structure
JP2007103921A (en) * 2005-09-06 2007-04-19 Canon Inc Semiconductor element
KR100869840B1 (en) 2006-02-07 2008-11-21 토쿄오오카코교 가부시기가이샤 Coloring composition for forming a silica film
JP2017031040A (en) * 2015-07-31 2017-02-09 三星エスディアイ株式会社Samsung SDI Co., Ltd. Silica film forming composition, method for producing silica film and silica film

Also Published As

Publication number Publication date
JPS6046826B2 (en) 1985-10-18

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