JP6795331B2 - シリカ膜の製造方法、シリカ膜および電子素子 - Google Patents
シリカ膜の製造方法、シリカ膜および電子素子 Download PDFInfo
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- JP6795331B2 JP6795331B2 JP2016106587A JP2016106587A JP6795331B2 JP 6795331 B2 JP6795331 B2 JP 6795331B2 JP 2016106587 A JP2016106587 A JP 2016106587A JP 2016106587 A JP2016106587 A JP 2016106587A JP 6795331 B2 JP6795331 B2 JP 6795331B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
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Description
前記「*」は、連結地点を意味する。
前記「*」は、連結地点を意味する。ここで、R4〜R7は、水素原子であることが好ましい。
容量2Lの撹拌、温度制御装置付き反応器の内部を乾燥窒素に置換した。そして、乾燥ピリジン1,500gを注入して十分に混合した後に反応器に入れて、これを20℃に保温した。次に、ジクロロシラン100gを1時間かけて徐々に注入した。そして、撹拌しながら、これにアンモニア70gを3時間かけて徐々に注入した。次に、乾燥窒素を30分間注入し、反応器内に残存するアンモニアを除去した。得られた白色スラリー状の生成物を乾燥窒素雰囲気中にて1μmのテフロン(登録商標)製ろ過器を用いてろ過したところ、ろ液1,000gを得た。これに乾燥キシレン1,000gを添加した後、ロータリーエバポレーターを用いて、溶媒をピリジンからキシレンに置換する操作を計3回繰り返しながら固形分濃度を20重量%に調整し、最後に、ポアサイズ0.03μmのテフロン(登録商標)製ろ過器でろ過した。得られたポリシラザンの酸素含有量は3.8%、SiH3/SiH(total)は0.22、重量平均分子量は4,000であった。重量平均分子量は、GPC;HPLC Pump1515、RI Detector2414(Waters社製造)およびColumn:LF804(Shodex社製造)を用いて測定した。
プリウェット用液状物質として1,3,5−トリメチルベンゼン(trimethylbenzene、TMB、沸点164.7℃)3.0mlを取って、優先的に直径12インチのシリコンウエハの中央部分にスピンコーター(MIKASA社製、MS−A200)によって2000rpmで20秒間スピン塗布後、前記製造例で得られたシリカ膜形成用組成物を3.0ml取って、前記と同じ条件で再びスピン塗布した。その後、150℃で3分間、ホットプレートで加熱して薄膜を形成した。
プリウェット用液状物質として1,3,5−トリメチルベンゼン(trimethylbenzene、TMB、沸点164.7℃)とジブチルエーテル(dibutylether、DBE)とを7:3の比率(質量比)で混合した混合溶液3.0mlを用いたことを除いては、実施例1と同様にして薄膜を形成した。
プリウェット用液状物質として1,4−ジエチルベンゼン(diethylbenzene、DEB、沸点138℃)を用いたことを除いては、実施例1と同様にして薄膜を形成した。
プリウェット用液状物質の塗布過程を経ていないことを除いては、実施例1と同様にして薄膜を形成した。
前記実施例1〜3、および比較例1から製造された薄膜が形成されているウエハ上に、K−MAC社製反射分光型膜厚計(ST−5000)を用いて、図1に示されているように、9個のポイントを十字状(+)に指定して、各地点において、平均厚さ、厚さ範囲(最高厚さ−最小厚さ)、および厚さ均一性を確認した。
前記膜厚さ均一性を評価した実施例1〜3、および比較例1から形成された薄膜を、それぞれ、800℃で高温酸化反応を進行させて酸化膜に転換した後、エッチング過程を経てシリカ膜を形成した。実施例1〜3で得られた薄膜から形成されたシリカ膜を実施例4〜6と、比較例1で得られた薄膜から形成されたシリカ膜を比較例2とする。
前記実施例4〜6、および比較例2から形成されたシリカ膜のディフェクトを、AIT XP(KLA−Tencor社製、AIT XP Fusion)および電子顕微鏡(日立ハイテクノロジーズ社製、S5500)を用いて観測した。全体のディフェクト中において、パターンの上径150nm以上の球状のものをカウントして、これをホールディフェクトと見なした。
Claims (8)
- 基板上に炭素化合物を含む液状物質を塗布する段階と、
前記液状物質が塗布された基板上にシリカ膜形成用組成物を塗布する段階と、
前記シリカ膜形成用組成物が塗布された基板を硬化する段階と、を含み、
前記炭素化合物は、置換もしくは非置換のトリメチルベンゼン、置換もしくは非置換のジメチルベンゼン、および置換もしくは非置換のジエチルベンゼンからなる群から選択される、シリカ膜の製造方法。 - 前記炭素化合物は、その構造内に置換もしくは非置換のベンゼン環を1つ含み、全炭素数は6〜14である、請求項1に記載のシリカ膜の製造方法。
- 前記炭素化合物の沸点は、98℃〜200℃である、請求項1または2に記載のシリカ膜の製造方法。
- さらに、前記液状物質が芳香族系炭素化合物以外の他の炭素化合物を含む、請求項1〜3のいずれか1項に記載のシリカ膜の製造方法。
- 前記シリカ膜形成用組成物は、ケイ素含有重合体および溶媒を含む、請求項1〜4のいずれか1項に記載のシリカ膜の製造方法。
- 前記ケイ素含有重合体は、ポリシラザンおよびポリシロキサザンの少なくとも一方である、請求項5に記載のシリカ膜の製造方法。
- 前記溶媒は、ベンゼン、トルエン、キシレン、エチルベンゼン、ジエチルベンゼン、トリメチルベンゼン、トリエチルベンゼン、シクロヘキサン、シクロヘキセン、デカヒドロナフタレン、ジペンテン、ペンタン、ヘキサン、ヘプタン、オクタン、ノナン、デカン、エチルシクロヘキサン、メチルシクロヘキサン、p−メンタン、ジプロピルエーテル、ジブチルエーテル、アニソール、酢酸ブチル、酢酸アミル、およびメチルイソブチルケトンからなる群より選択された少なくとも1つを含む、請求項5または6に記載のシリカ膜の製造方法。
- 前記シリカ膜形成用組成物を塗布する段階は、スピンコート法によって行われる、請求項1〜7のいずれか1項に記載のシリカ膜の製造方法。
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KR20170037440A (ko) | 2017-04-04 |
CN106558483B (zh) | 2019-12-31 |
CN106558483A (zh) | 2017-04-05 |
TW201724171A (zh) | 2017-07-01 |
TWI633577B (zh) | 2018-08-21 |
KR101895912B1 (ko) | 2018-09-07 |
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